講演・口頭発表等 - 中塚 理
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Synthesis of p- and n-type Ge1-xSnx Thin Films toward New Group-IV Thermoelectric Materials 国際会議
M. Kurosawa, Y. Imai, T. Iwahashi, A. Ohta, N. Uchida, Y. Ohishi, T. Maeda, O. Nakatsuka, and S. Zaima
36th Annual International Conference on Thermoelectrics (2017 ICT)
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Characterization of energy band structure of Si1-x-ySnxCy ternary alloy layers prepared with solid-phase crystallization 国際会議
S. Yano, O. Nakatsuka, C. Lim, M. Sakashita, M. Kurosawa, and S. Zaima
29th International Conference on Defects in Semiconductors (ICDS 2017)
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Research and development of GeSn-related thin-film semiconductors for nanoelectronic and optoelectronic applications 招待有り 国際会議
O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
Frontiers in Materials Processing Applications, Research and Technology (FiMPART 2017)
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Formation of Epitaxial Hf Germanide/Ge Contacts for Schottky Barrier Height Engineering 国際会議
O. Nakatsuka, A. Suzuki, J. McVittie, Y. Nishi, and S. Zaima
17th International Workshop on Junction Technology 2017 (IWJT 2017)
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Development of GeSn and related semiconductor thin films for next generation optoelectronic applications 招待有り 国際会議
O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima
2017 Global Conference on Polymer and Composite Materials (PCM 2017)
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Alleviation of Fermi level pinning at metal/Ge interface using lattice-matching group-IV ternary alloy interlayer 国際会議
A. Suzuki, O. Nakatsuka, S. Toda, M. Sakashita, and S. Zaima
The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)
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Control of lattice constant of Ge1-x-ySixSny layer for energy band engineering in Ge1-xSnx/Ge1-x-ySixSny heterostructure 国際会議
M. Fukuda, K. Watanabe, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima
The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)
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Formation of heavily Sb and Ga doped poly-Ge1-xSnx layers on insulator using pulsed laser annealing in water 国際会議
K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima
The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)
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Solid phase epitaxy of Si1-xSnx layers on various substrates 国際会議
M. Kurosawa, M. Kato, K. Takahashi, O. Nakatsuka, and S. Zaima
The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)
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Epitaxial growth of n+-Ge1-xSnxlayerswith in situ phosphorus doping using low-temperature metal-organic chemical vapor deposition method 国際会議
S. Ike, W. Takeuchi, O. Nakatsuka, and S. Zaima
The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10)
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Formation of SiC and SiCN Films by Chemical Vapor Deposition using Vinylsilane 国際会議
T. Doi, W. Takeuchi, Y. Jin, H. Kokubun, S. Yasuhara, O. Nakatsuka and S. Zaima
9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 10th International Conference on Plasma-Nano Technology and Science (ISPlasma 2017 / IC-PLANTS 2017)
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Electrical Properties of AlON/4H-SiC MOS Capacitor Prepared by Plasma-Assisted Atomic Layer Deposition 国際会議
W. Takeuchi, K. Yamamoto, T. Mimura, M. Sakashita, O. Nakatsuka, and , S. Zaima
9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 10th International Conference on Plasma-Nano Technology and Science (ISPlasma 2017 / IC-PLANTS 2017)
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Selective Growth of Ge1-xSnx Epitaxial Layer on Patterned Si Substrate using Metal-organic Chemical Vapor Deposition Method 国際会議
T. Washizu, S. Ike, W. Takeuchi, O. Nakatsuka, S. Zaima
9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 10th International Conference on Plasma-Nano Technology and Science (ISPlasma 2017 / IC-PLANTS 2017)
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Development of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers for Source/Drain Stressor of Strained GeTransistors 国際会議
J. Jeon, A. Suzuki, K. Takahashi, O. Nakatsuka, and S. Zaima
Electron Devices Technology and Manufacturing Conference (EDTM 2017)
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Effect of Oxynitridation Annealing for SiO2/SiC Interface on Defects Properties 招待有り 国際会議
W. Takeuchi, K. Yamamoto, M. Sakashita, O. Nakatsuka and S. Zaima
10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Influence of atomic layer deposition temperature of GeO2 layer on electrical properties of Ge and Ge1-xSnx gate stack 国際会議
Y. Kaneda, M. Kanematsu, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima
10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Solid phase crystallization of Ge0.98Sn0.02 layers on various insulating substrates 国際会議
I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima
10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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In situ phosphorus doping of Ge and Ge1-xSnx epitaxial layers by low-temperature metal-organic chemical vapor deposition 国際会議
S. Ike, W. Takeuchi, O. Nakatsuka and S. Zaima
10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
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Growth of Si1-xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates 国際会議
JSPS Meeting 2016 : Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration"
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Formation of heavily Sb doped poly-Ge1-xSnx layer using pulsed laser annealing in water 国際会議
JSPS Meeting 2016 : Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration"