講演・口頭発表等 - 中塚 理
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In-situ Ga Doping to Fully Strained Ge1-xSnx Heteroepitaxial Layers Grown on Ge(001) Substrates 国際会議
Y. Shimura, S. Takeuchi, O. Nakatsuka, B. Vincent, F. Gencarelli, T. Clarysse, W. Vandervorst, M. Caymax, R. Loo, and S. Zaima
7th International Conference on Si Epitaxy and Heterostructures (iCSi-7 2011&GeSnWorkshop)
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Low Temperature Formation of Si1-x-yGexSny-on-Insulator Structures by Using Solid-Phase Mixing of Ge1-zSnz/Si-on-Insulator Substrates 国際会議
K. Mochizuki, T. Yamaha, Y. Shimura, O. Nakatsuka, and S. Zaima
7th International Conference on Si Epitaxy and Heterostructures (iCSi-7 2011&GeSnWorkshop)
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Epitaxial Growth of Ge1-xSnx for Strained Ge CMOS Devices 国際会議
S. Zaima, Y. Shimura, S. Takeuchi and O. Nakatsuka
International Conference on Processing & Manufacturing of Advanced Materials (THERMEC' 2011)
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Control of Surface and Interfacial Structure by Radical Nitridation Technique for Ge MOS Transistors 国際会議
K. Kato, H. Kondo, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima
The 4th International Conference on PLAsma-NanoTechnology & Science (IC-PLANTS 2011)
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Characterization of Damages of Al2O3/Ge Gate Stacks Structure Induced with Light Radiation during Plasma Nitridation 国際会議
Kusumandari, W. Takeuchi, K. Kato, M. Sakashita, O. Nakatsuka, S. Zaima
3rd International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials (ISPLasma 2011)
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Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique 国際会議
K. Kato, S. Kyogoku, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, S. Zaima
2011 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF 2011)
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Influence of Light Radiation on Electrical Properties of Al2O3/Ge and GeO2/Ge Gate Stacks in Nitrogen Plasma 国際会議
Kusumandari, W. Takeuchi, K. Kato, M. Sakashita, O. Nakatsuka, S. Zaima
2011 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF 2011)
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Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-devices based on Fundamental Physics of Why Silicides Exist in Nature 国際会議
T.Nakayama, K. Kakushima, O. Nakatsuka, Y. Machida, S. Sotome, T. Matsuki, K. Ohmori, H. Iwai, S. Zaima, T. Chikyow, K. Shiraishi, and K. Yamada
2010 IEEE International Electron Devices Meeting
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Study of Ge Surface Passivation using Radical Nitridation Technique for Ge Channel MOS Transistors 国際会議
K. Kato, H. Kondo, M. Sakashita, W. Takeuchi, O. Nakatsuka, S. Zaima
The 1st Korea-Japan Symposium on Surface Technology
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Tensile-Strained Ge and Ge1-xSnx Layers for High-Mobility Channels in Future CMOS Devices 国際会議
S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi
International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2010)
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Formation of Palladium Silicide Thin Layers on Si (110) Substrates 国際会議
R. Suryana, O. Nakatsuka, and S. Zaima
Advanced Metallization Conference 2010: 20th Asian Session (ADMETA 2010)
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Characterization of Local Strain around Through-Silicon Via Interconnects by using X-ray Microdiffraction 国際会議
O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba, and S. Zaima
Advanced Metallization Conference 2010: 20th Asian Session (ADMETA 2010)
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Control of Strain Relaxation Behavior of Ge1-xSnx Layers for Tensile Strained Ge Layers 国際会議
Y. Shimura, S. Takeuchi, O. Nakatsuka, and S. Zaima
218th ECS Meeting
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Assessment of Ge1-xSnx Alloys for Strained Ge CMOS Devices 国際会議
S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, A. Sakai, and S. Zaima
218th ECS Meeting
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Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy 国際会議
M. Adachi, M. Sakashita, H. Kondo, W. Takeuchi, O. Nakatsuka, and S. Zaima
2010 International Conference on Solid State Devices and Materials (SSDM 2010)
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Effects of Al Incorporation into Pr-oxides Formed by Atomic Layer Deposition 国際会議
K. Furuta, W. Takeuchi, M. Sakashita, K. Kato, H. Kondo, O. Nakatsuka, and S. Zaima
2010 International Conference on Solid State Devices and Materials (SSDM 2010)
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Growth and Characterization of GeSn and Tensile-Strained Ge Layers for High Mobility Channels of CMOS Devices 国際会議
O. Nakatsuka, Y. Shimura, S. Takeuchi, and S. Zaima
The 7th Pacific Rim International Conference on Advanced Materials and Processing
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Microscopic structure of directly bonded silicon substrates
T. Kato, Y. Ohara, T. Ueda, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, and S. Kimura
International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE)
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Strained Ge and Ge1-xSnx technology for future CMOS devices
S. Zaima, O. Nakatsuka, S. Takeuchi, Y. Shimura, A. Sakai, H. Kondo, and M. Sakashita
International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE)
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Formation of Ge1-xSnx heteroepitaxial layers with high Sn content 国際会議
Y. Shimura, S. Takeuchi, O. Nakatsuka, A. Sakai, and S. Zaima
International Symposium on Technology Evolution for Silicon Nano Electronics (ISTESNE)