財団法人 高輝度光科学研究センター 外来研究員（兼職）

2006.1

EcoTopia Science Institute, Nagoya UniversityAssistant Professor

2004.4 - 2007.4

Center for Integrated Research in Science and Engineering, Nagoya UniversityAssistant Professor

2001.6 - 2004.3

Venture Business Laboratory, Kyoto UniversityPost Doctoral Fellow

2000.4 - 2001.5

Advanced Metallization Conference 2020 Asian Session, Special Symposium Committee   ADMETA Plus 2020 委員会  

2020.2 - 2021.12   

(公社) 応用物理学会 薄膜・表面物理分科会   常任幹事  

2019.4 - 2021.3   

（公社） 応用物理学会   第58,59期代議員  

2019.2 - 2021.3   

(公社) 応用物理学会 シリコンテクノロジー分科会   幹事（多層配線システム研究会）  

2018.4   

Japanese Journal of Applied Physics   Editorial board member of Japanese Journal of Applied Physics  

2012.4   

電子デバイス界面テクノロジー研究会   実行プログラム委員  

2012.4   

(公社) 応用物理学会東海支部   支部幹事  

2011.4   

ISTDM 2008 Best Poster Award

2008.5   The fourth International SiGe Technology and Device Meeting  

第3回 P&I パテントコンテスト：パテント・オブ・ザ・イヤープロセス・テクノロジー部門

2006.11  

Lattice-matched growth of high-Sn-content (<i>x</i>∼0.1) Si_1-<i>x</i>Sn_<i>x</i> layers on Si_1-<i>y</i>Ge_<i>y</i> buffers using molecular beam epitaxy Reviewed

Fujimoto, K; Kurosawa, M; Shibayama, S; Sakashita, M; Nakatsuka, O

APPLIED PHYSICS EXPRESS   Vol. 16 ( 4 )   2023.4

Crystalline and optoelectronic properties of Ge_1-<i>x</i>Sn<i> _x </i>/high-Si-content-Si<i> _y </i>Ge_{1-<i>x</i>-<i>y</i>}Sn<i> _x </i> double-quantum wells grown with low-temperature molecular beam epitaxy Reviewed

Zhang, SY; Shibayama, S; Nakatsuka, O

SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 38 ( 1 )   2023.1

Sn-incorporation effect on thermoelectric properties of Sb-doped Ge-rich Ge_{1-<i>x</i>-<i>y</i>}Si_<i>x</i>Sn_<i>y</i> epitaxial layers grown on GaAs(001) Reviewed

Kurosawa, M; Nakata, M; Zhan, TZ; Tomita, M; Watanabe, T; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( 8 )   2022.8

Crystal structure change in multilayer GeH flakes by hydrogen desorption under ultrahigh vacuum environments Reviewed

Itoh, M; Araidai, M; Ohta, A; Nakatsuka, O; Kurosawa, M

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SC )   2022.5

Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO₂/SiC gate interface Reviewed

Kagoshima, E; Takeuchi, W; Kutsuki, K; Sakashita, M; Fujiwara, H; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SC )   2022.5

High-pressure polycrystalline thin-film synthesis and semiconducting property of platinum pernitride Reviewed

Niwa, K; Iizuka, T; Kurosawa, M; Nakamura, Y; Valencia, HO; Kishida, H; Nakatsuka, O; Sasaki, T; Gaida, NA; Hasegawa, M

AIP ADVANCES   Vol. 12 ( 5 )   2022.5

Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators Reviewed

Oishi, R; Asaka, K; Bolotov, L; Uchida, N; Kurosawa, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SC )   2022.5

Visualization of local strain in 4H-SiC trench metal-oxide-semiconductor field-effect transistor using synchrotron nanobeam X-ray diffraction Reviewed

Takeuchi, W; Kagoshima, E; Sumitani, K; Imai, Y; Shibayama, S; Sakashita, M; Kimura, S; Tomita, H; Nishiwaki, T; Fujiwara, H; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SC )   2022.5

Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs Reviewed

Doi, T; Shibayama, S; Sakashital, M; Taokal, N; Shimizu, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( 2 )   2022.2

Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height Reviewed

Doi, T; Shibayama, S; Sakashita, M; Kojima, K; Shimizu, M; Nakatsuka, O

APPLIED PHYSICS EXPRESS   Vol. 15 ( 1 )   2022.1

Photoluminescence properties of heavily Sb doped Ge_1-<i>x</i>Sn<i> _x </i> and heterostructure design favorable for n<SUP>+</SUP>-Ge_1-<i>x</i>Sn<i> _x </i> active layer Reviewed

Zhang, SY; Fukuda, M; Jeon, J; Sakashita, M; Shibayama, S; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SA )   2022.1

Constructed Ge Quantum Dots and Sn Precipitate SiGeSn Hybrid Film with High Thermoelectric Performance at Low Temperature Region Reviewed

Peng, Y; Miao, L; Liu, CY; Song, HL; Kurosawa, M; Nakatsuka, O; Back, SY; Rhyee, JS; Murata, M; Tanemura, S; Baba, T; Baba, T; Ishizaki, T; Mori, T

ADVANCED ENERGY MATERIALS   Vol. 12 ( 2 )   2022.1

Interface Structures and Electrical Properties of Micro-Fabricated Epitaxial Hf-Digermanide/<i>n</i>-Ge(001) Contacts Reviewed

Kasahara, K; Senga, K; Sakashita, M; Shibayama, S; Nakatsuka, O

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY   Vol. 10   page： 744 - 750   2022

Reinforcement of power factor in N-type multiphase thin film of Si_1-x-yGe_xSn_y by mitigating the opposing behavior of Seebeck coefficient and electrical conductivity Reviewed

Lai, HJ; Peng, Y; Gao, J; Song, HL; Kurosawa, M; Nakatsuka, O; Takeuchi, T; Miao, L

APPLIED PHYSICS LETTERS   Vol. 119 ( 11 )   2021.9

Lowering of the Schottky barrier height of metal/n-type 4H-SiC contacts using low-work-function metals with thin insulator insertion Reviewed

Doi, T; Shibayama, S; Sakashita, M; Shimizu, M; Nakatsuka, O

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( 7 )   2021.7

No external load measurement strategy for micro thermoelectric generator based on high-performance Si_1-x-yGe_xSn_y film Reviewed

Peng, Y; Zhu, SJ; Lai, HJ; Gao, J; Kurosawa, M; Nakatsuka, O; Tanemura, S; Peng, BL; Miao, L

JOURNAL OF MATERIOMICS   Vol. 7 ( 4 ) page： 665 - 671   2021.7

Impact of Wet Annealing on Ferroelectric Phase Formation and Phase Transition of HfO₂-ZrO₂ System Reviewed

Shibayama, S; Nagano, J; Asaka, K; Sakashita, M; Nakatsuka, O

ACS APPLIED ELECTRONIC MATERIALS   Vol. 3 ( 5 ) page： 2203 - 2211   2021.5

Silicon-based low-dimensional materials for thermal conductivity suppression: recent advances and new strategies to high thermoelectric efficiency Reviewed

Lai Huajun, Peng Ying, Gao Jie, Kurosawa Masashi, Nakatsuka Osamu, Takeuchi Tsunehiro, Miao Lei

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( SA )   2021.1

Improved interface uniformity of epitaxial HfGe₂/Ge(001) contact by microfabrication and its electron conduction property Reviewed

Kasahara, K; Senga, K; Sakashita, M; Shibayama, S; Nakatsuka, O

TWENTIETH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT 2021)     page： 58 - 60   2021

Formation of ultra-thin Ge1-xSnx/Ge1-x-ySixSny quantum heterostructures and their electrical properties for realizing resonant tunneling diode Reviewed

Suwito Galih Ramadana, Fukuda Masahiro, Suprayoga Edi, Ohtsuka Masahiro, Hasdeo Eddwi Hesky, Nugraha Ahmad Ridwan Tresna, Sakashita Mitsuo, Shibayama Shigehisa, Nakatsuka Osamu

APPLIED PHYSICS LETTERS   Vol. 117 ( 23 )   2020.12

Crystal Growth of Epitaxial 3C-SiC Thin Film on Si Substrate by Chemical Vapor Deposition using Single Precursor of Vinylsilane Invited Reviewed

T. Doi, K. Hashimoto, W. Takeuchi, and O. Nakatsuka

ECS Trans.   Vol. 98   page： 169 - 176   2020.10

(Invited) Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design Invited Reviewed

O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

ECS Trans.   Vol. 98   page： 149 - 156   2020.10

Realizing high thermoelectric performance in p-type Si1-x-yGexSny thin films at ambient temperature by Sn modulation doping Reviewed

Peng Ying, Lai Huajun, Liu Chengyan, Gao Jie, Kurosawa Masashi, Nakatsuka Osamu, Takeuchi Tsunehiro, Zaima Shigeaki, Tanemura Sakae, Miao Lei

APPLIED PHYSICS LETTERS   Vol. 117 ( 5 )   2020.8

Ferroelectric phase formation for undoped ZrO2 thin films by wet O-2 annealing Reviewed

Shibayama Shigehisa, Nagano Jotaro, Sakashita Mitsuo, Nakatsuka Osamu

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.7

Saturation of electrically activated Sb concentration in heavily Sb-doped n(+)-Ge1-xSnx epitaxial layers Reviewed

Jeon Jihee, Shibayama Shigehisa, Nakatsuka Osamu

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.7

Impact of byproducts formed on a 4H-SiC surface on interface state density of Al2O3/4H-SiC(0001) gate stacks Reviewed

Doi Takuma, Shibayama Shigehisa, Takeuchi Wakana, Sakashita Mitsuo, Taoka Noriyuki, Shimizu Mitsuaki, Nakatsuka Osamu

APPLIED PHYSICS LETTERS   Vol. 116 ( 22 )   2020.6

Fermi-level pinning at metal/4H-SiC contact induced by SiCxOy interlayer Reviewed

Hashimoto Kentaro, Doi Takuma, Shibayama Shigehisa, Nakatsuka Osamu

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

Mobility enhancement by mechanical uniaxial stress on 4H-SiC (0001) lateral metal-oxide-semiconductor field-effect-transistor Reviewed

Takeuchi Wakana, Kutsuki Katsuhiro, Kagoshima Eiji, Onishi Toru, Iwasaki Shinya, Sakashita Mitsuo, Fujiwara Hirokazu, Nakatsuka Osamu

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59   2020.4

Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation Reviewed

Peng Ying, Miao Lei, Gao Jie, Liu Chengyan, Kurosawa Masashi, Nakatsuka Osamu, Zaima Shigeaki

SCIENTIFIC REPORTS   Vol. 9   2019.10

Development of Germanium-Tin-Related Semiconductor Heterostructures for Energy Band Design in Electronic and Optoelectronic Applications Invited Reviewed

O. Nakatsuka, M. Fukuda, M. Sakashita, M. Kurosawa, S. Shibayama, and S. Zaima

ECS Trans.   Vol. 92 ( 4 ) page： 41-46   2019.10

Formation and optoelectronic property of strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructures on a boron-ion-implanted Ge(001) substrate Reviewed

Fukuda Masahiro, Rainko Denis, Sakashita Mitsuo, Kurosawa Masashi, Buca Dan, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.8

Ultra-low resistance contact for n-type Ge1-xSnx with by in-situ Sb heavily doping and nickel stanogermanide formation

J. Jeon, A. Suzuki, S. Shibayama, S. Zaima, and O. Nakatsuka

  Vol. 119 ( 96 ) page： 5-9   2019.6

イオン注入法によるⅣ族半導体混晶薄膜の歪緩和促進機構について

祖父江秀隆, 福田雅大, 柴山茂久, 財満鎭明, 中塚理

信学技報   Vol. 119 ( 96 ) page： 17-20   2019.6

Operation of thin-film thermoelectric generator of Ge-rich poly-Ge1-xSnx on SiO2 fabricated by a low thermal budget process Reviewed

Takahashi Kouta, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki, Kurosawa Masashi

APPLIED PHYSICS EXPRESS   Vol. 12 ( 5 )   2019.5

Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment Reviewed

Doi Takuma, Takeuchi Wakana, Shibayama Shigehisa, Sakashita Mitsuo, Taoka Noriyuki, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.4

Effect of carbon in Si oxide interlayers of the Al2O3/4H-SiC structure on interfacial reaction by oxygen radical treatment (vol 58, SBBD05, 2019) Reviewed

Doi Takuma, Takeuchi Wakana, Shibayama Shigehisa, Sakashita Mitsuo, Taoka Noriyuki, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58   2019.4

Influence of Sn precursors on Ge1-xSnx growth using metal-organic chemical vapor deposition Reviewed

Miki Yusuke, Takeuchi Wakana, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SA )   2019.2

Synthesis of heavily Ga-doped Si1-xSnx/Si heterostructures and their valence-band-offset determination Reviewed

Kurosawa Masashi, Inaishi Yu, Tange Ryuji, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SA )   2019.2

Further reduction of Schottky barrier height of Hf-germanide/n-Ge(001) contacts by forming epitaxial HfGe2 Reviewed

Senga Kazuki, Shibayama Shigehisa, Sakashita Mitsuo, Zaima Shigeaki, Nakatsuka Osamu

2019 NINETEENTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)     page： .   2019

Fabrication of Porous Silicon using Photolithography and Reactive Ion Etching (RIE) Reviewed

Pratiwi Nur'aini Dian, Handayani Mita, Suryana Risa, Nakatsuka Osamu

MATERIALS TODAY-PROCEEDINGS   Vol. 13   page： 92 - 96   2019

Patterned Porous Silicon Prepared by Reactive Ion Etching Technique Reviewed

Suryana R., Pratiwi N. D., Handayani M., Santika M., Nakatsuka O.

INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS FOR BETTER FUTURE 2018   Vol. 578   2019

Crystalline and Electrical Properties of Ge_1-xSn_x/Ge_1-x-ySi_xSn_y Quantum Well Structures Reviewed

Suwito, GR; Fukuda, M; Shibayama, S; Sakashita, M; Nakatsuka, O; Zaima, S

2019 COMPOUND SEMICONDUCTOR WEEK (CSW)     2019

Impact of crystalline structures on the thermal stability and Schottky barrier height of NiGe/Ge contact Reviewed

Deng Yunsheng, He Dongsheng, Qiu Yang, Gu Rui, He Jiaqing, Nakatsuka Osamu

APPLIED PHYSICS LETTERS   Vol. 113 ( 25 )   2018.12

Ultra-thin germanium-tin on insulator structure through direct bonding technique Reviewed

Maeda Tatsuro, Chang Wen Hsin, Irisawa Toshifumi, Ishii Hiroyuki, Oka Hiroshi, Kurosawa Masashi, Imai Yukihiro, Nakatsuka Osamu, Uchida Noriyuki

SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 33 ( 12 )   2018.12

Optoelectronic properties of high-Si-content-Gel-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny double heterostructure Reviewed

Fukuda Masahiro, Rainko Denis, Sakashita Mitsuo, Kurosawa Masashi, Buca Dan, Nakatsuka Osamu, Zaima Shigeaki

SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 33 ( 12 )   2018.12

Growth and electrical properties of in situ Sb-doped Ge1-xSnx epitaxial layers for source/drain stressor of strained-Ge transistors Reviewed

Jeon Jihee, Suzuki Akihiro, Takahashi Kouta, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 12 )   2018.12

Formation of ultra-low resistance contact with nickel stanogermanide/heavily doped n(+)-Ge1-xSnx structure Reviewed

Jeon Jihee, Suzuki Akihiro, Nakatsuka Osamu, Zaima Shigeaki

SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 33 ( 12 )   2018.12

Defect evaluation in strain-relaxed Ge0.947Sn0.053 grown on (001) Si Reviewed

Gupta S., Shimura Y., Richard O., Douhard B., Simoen E., Bender H., Nakatsuka O., Zaima S., Loo R., Heyns M.

APPLIED PHYSICS LETTERS   Vol. 113 ( 19 )   2018.11

Formation of epitaxial Hf digermanide/Ge(001) contact and its crystalline properties Reviewed

Nakatsuka Osamu, Suzuki Akihiro, McVittie James, Nishi Yoshio, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 7 )   2018.7

Energy band structure and electrical properties of Ga-oxide/GaN interface formed by remote oxygen plasma Reviewed

Yamamoto Taishi, Taoka Noriyuki, Ohta Akio, Nguyen Xuan Truyen, Yamada Hisashi, Takahashi Tokio, Ikeda Mitsuhisa, Makihara Katsunori, Nakatsuka Osamu, Shimizu Mitsuaki, Miyazaki Seiichi

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched SixGe1-x-ySny ternary alloy interlayer on Ge Reviewed

Suzuki Akihiro, Nakatsuka Osamu, Sakashita Mitsuo, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

Dopant behavior in heavily doped polycrystalline Ge1-xSnx layers prepared with pulsed laser annealing in water Reviewed

Takahashi Kouta, Kurosawa Masashi, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

High n-type Sb dopant activation in Ge-rich poly-Ge1-xSnx layers on SiO2 using pulsed laser annealing in flowing water Reviewed

Takahashi Kouta, Kurosawa Masashi, Ikenoue Hiroshi, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki

APPLIED PHYSICS LETTERS   Vol. 112 ( 6 )   2018.2

Epitaxial growth of heavily doped n(+)-Ge layers using metal-organic chemical vapor deposition with in situ phosphorus doping Reviewed

Ike Shinichi, Takeuchi Wakana, Nakatsuka Osamu, Zaima Shigeaki

THIN SOLID FILMS   Vol. 645   page： 57 - 63   2018.1

Formation of SiC thin films by chemical vapor deposition with vinylsilane precursor Reviewed

Doi Takuma, Takeuchi Wakana, Jin Yong, Kokubun Hiroshi, Yasuhara Shigeo, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 1 )   2018.1

Effect of N bonding structure in AlON deposited by plasma-assisted atomic layer deposition on electrical properties of 4H-SiC MOS capacitor Reviewed

Takeuchi Wakana, Yamamoto Kensaku, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Sigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 1 )   2018.1

Improved thermoelectric property of B-doped Si/Ge multilayered quantum dot films prepared by RF magnetron sputtering Reviewed

Peng Ying, Miao Lei, Li Chao, Huang Rong, Urushihara Daisuke, Asaka Toru, Nakatsuka Osamu, Tanemura Sakae

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 1 )   2018.1

Selective growth of Ge1-xSnx epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition Reviewed

Takeuchi Wakana, Washizu Tomoya, Ike Shinichi, Nakatsuka Osamu, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 1 )   2018.1

The morphological study of porous silicon formed by electrochemical anodization method

Suryana R., Sandi D. K., Nakatsuka O.

INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS FOR BETTER FUTURE 2017   Vol. 333   2018

A New Application of Ge1-xSnx: Thermoelectric Materials Reviewed

Kurosawa Masashi, Imai Yukihiro, Iwahashi Taisei, Takahashi Kouta, Sakashita Mitsuo, Nakatsuka Osamu, Zaima Shigeaki

SIGE, GE, AND RELATED COMPOUNDS: MATERIALS, PROCESSING, AND DEVICES 8   Vol. 86 ( 7 ) page： 321 - 328   2018

In situ phosphorus-doped Ge1-xSnx layers grown using low-temperature metal-organic chemical vapor deposition Reviewed

Ike Shinichi, Takeuchi Wakana, Nakatsuka Osamu, Zaima Shigeaki

SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 32 ( 12 )   2017.12

Self-organized lattice-matched epitaxy of Si1-xSnx alloys on (001)-oriented Si, Ge, and InP substrates Reviewed

Kurosawa Masashi, Kato Motohiro, Takahashi Kouta, Nakatsuka Osamu, Zaima Shigeaki

APPLIED PHYSICS LETTERS   Vol. 111 ( 19 )   2017.11

Si1-xGex Bulk Single Crystals for Substrates of Electronic Devices Reviewed

K. Kinoshita, Y. Arai, T. Maeda, and O. Nakatsuka

Mater. Sci. Semicond. Proc.   Vol. 70 ( 1 ) page： 12-16   2017.11

Modulation of Fermi level pining position at metal/n-Ge interface by semimetal Ge1-xSnx and Sn interlayers Reviewed

A. Suzuki, M. Sakashita, O. Nakatsuka, and S. Zaima

Mater. Sci. Semicond. Proc.   Vol. 70 ( 1 ) page： 162-166   2017.11

Formation and characterization of Ge1-x-ySixSny/ Ge1-xSnx/Ge1-x-ySixSny double heterostructures with strain-controlled Ge1-x-ySixSny layers Reviewed

M. Fukuda, T. Yamaha, T. Asano, S. Fujinami, Y. Shimura, M. Kurosawa, O. Nakatsuka, and S. Zaima

Mater. Sci. Semicond. Proc.   Vol. 70 ( 1 ) page： 156-161   2017.11

Low-temperature crystallization of Ge-rich GeSn layers on Si3N4 substrate Reviewed

I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

Mater. Sci. Semicond. Proc.   Vol. 70 ( 1 ) page： 151-155   2017.11

EXAFS study of local structure contributing to Sn stability in SiyGe1-y-zSnz Reviewed

Y. Shimura, T. Asano, T. Yamaha, M. Fukuda, W. Takeuchi, O. Nakatsuka, and S. Zaima

Mater. Sci. Semicond. Proc.   Vol. 70 ( 1 ) page： 133-138   2017.11

Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration Reviewed

Taoka Noriyuki, Capellini Giovanni, Schlykow Viktoria, Montanari Michele, Zaumseil Peter, Nakatsuka Osamu, Zaima Shigeaki, Schroeder Thomas

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 70   page： 139 - 144   2017.11

Sii(1-x)Ge(x) bulk single crystals for substrates of electronic devices Reviewed

Kinoshita Kyoichi, Arai Yasutomo, Maeda Tatsuro, Nakatsuka Osamu

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 70   page： 12 - 16   2017.11

Formation and characterization of Ge_1-x-ySi_xSn_y/Ge_1-xSn_x/ Ge_1-x-ySi_xSn_y double heterostructures with strain-controlled Ge_1-x-yS_ixSn_y layers Reviewed

Fukuda, M; Yamaha, T; Asano, T; Fujinami, S; Shimura, Y; Kurosawa, M; Nakatsuka, O; Zaima, S

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 70   page： 156 - 161   2017.11

Growth and Applications of Si1-xSnx Thin Films Invited Reviewed

M. Kurosawa, O. Nakatsuka, and S. Zaima

ECS Trans.   Vol. 8 ( 4 ) page： 253-258   2017.10

Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures Reviewed

Fukuda Masahiro, Watanabe Kazuhiro, Sakashita Mitsuo, Kurosawa Masashi, Nakatsuka Osamu, Zaima Shigeaki

SEMICONDUCTOR SCIENCE AND TECHNOLOGY   Vol. 32 ( 10 )   2017.10

Selective epitaxial growth of Ge1-xSnx on Si by using metal-organic chemical vapor deposition Reviewed

T. Washizu, S. Ike, Y. Inuzuka, W. Takeuchi, O. Nakatsuka, and S. Zaima

J. Crystal Growth   Vol. 468   page： 614-619   2017.7

Evaluation of energy band offset of Si1-xSnx semiconductors by numerical calculation using density functional theory Reviewed

Nagae Yuki, Kurosawa Masashi, Araidai Masaaki, Nakatsuka Osamu, Shiraishi Kenji, Zaima Shigeaki

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 4 )   2017.4

4H-SiC MOSキャパシタのAlON絶縁膜のリーク電流特性に窒素結合状態が与える効果

竹内和歌奈, 山本建策, 三村智博, 坂下満男, 中塚理, 財満鎭明

特別研究会「電子デバイス界面テク ノロジー研究会―材料・プロセス・デバイス特性の物理―」 （第22回）     page： 127-130   2017.1

水中パルスレーザアニールを用いた多結晶Ge1-xSnx層中Sbの高活性化

高橋恒太, 黒澤昌志, 池上浩, 坂下満男, 中塚理, 財満鎭明

特別研究会「電子デバイス界面テク ノロジー研究会―材料・プロセス・デバイス特性の物理―」 （第22回）     page： 67-70   2017.1

金属/Ge接合へのSixGe1-x-ySny 界面層導入がショットキー障壁高さに及ぼす効果

鈴木陽洋, 戸田祥太, 中塚理, 坂下満男, 財満鎭明

特別研究会「電子デバイス界面テク ノロジー研究会―材料・プロセス・デバイス特性の物理―」 （第22回）     page： 63-66   2017.1

Hydrogen-surfactant-mediated epitaxy of Ge1-xSnx layer and its effect on crystalline and photoluminescence properties Reviewed

O. Nakatsuka, S. Fujinami, T. Asano, T. Koyama, M. Kurosawa, M. Sakashita, H. Kishida, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 56 ( 1S ) page： 01AB05 (6 pages)   2017.1

Solid phase crystallization of Si1-x-ySnxCy ternary alloy layers and characterization of its crystalline and optical properties Reviewed

S. Yano, T. Yamaha, Y. Shimura, W. Takeuchi, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 56 ( 1S ) page： 01AB02 (7 pages)   2017.1

Electrical and optical properties improvement of GeSn layers formed at high temperature under well-controlled Sn migration Reviewed

Taoka Noriyuki, Capellini Giovanni, Schlykow Viktoria, Montanari Michele, Zaumseil Peter, Nakatsuka Osamu, Zaima Shigeaki, Schroeder Thomas

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   Vol. 57   page： 48 - 53   2017.1

Hydrogen-surfactant-mediated epitaxy of Ge_1-<i>x</i>Sn<i>_x</i> layer and its effects on crystalline quality and photoluminescence property Reviewed

Nakatsuka, O; Fujinami, S; Asano, T; Koyama, T; Kurosawa, M; Sakashita, M; Kishida, H; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 1 )   2017.1

Solid-phase crystallization of Si_1<i>-x-y</i>Sn<i>_x</i>C<i>_y</i> ternary alloy layers and characterization of their crystalline and optical properties Reviewed

Yano, S; Yamaha, T; Shimura, Y; Takeuchi, W; Sakashita, M; Kurosawa, M; Nakatsuka, O; Zaima, S

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 1 )   2017.1

Electrical and Optical Properties Improvement of GeSn Layers Formed at High Temperature under Well-controlled Sn Migration Reviewed

N. Taoka, G. Capellini, V. Schlykow, M. Montanari, P. Zaumseil, O. Nakatsuka, S. Zaima, and T. Schroeder

Mater. Sci. Semicond. Proc.   Vol. 57   page： 48-53   2017

Development of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers for Source/Drain Stressor of Strained Ge Transistors Reviewed

Jeon Jihee, Suzuki Akihiro, Takahashi Kouta, Nakatsuka Osamu, Zaima Shigeaki

2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM)     page： 249 - 251   2017

Analysis of Microscopic Strain and Crystalline Structure in Ge/Ge1-xSnx Fine Structures by Using Synchrotron X-ray Microdiffraction Reviewed

S. Ike, O. Nakatsuka, Y. Inuzuka, T. Washizu, W. Takeuchi, Y. Imai, S. Kimura, and S. Zaima

ECS Trans.   Vol. 75 ( 8 ) page： 769-775   2016.10

Influence of GeO2 deposition temperature by in atomic layer deposition on electrical properties of Ge gate stack+K12 Reviewed

M. Kanematsu, S. Shibayama, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 55 ( 8S2 ) page： 08PC05 (5 pages)   2016.8

Density functional study for crystalline structures and electronic properties of Si1-xSnx binary alloys Reviewed

Y. Nagae, M. Kurosawa, S. Shibayama, M. Araidai, M. Sakashita, O. Nakatsuka, K. Shiraishi, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 55 ( 8S2 ) page： 08PE04 (4 pages)   2016.8

Ge基板上エピタキシャルGeSn膜の電気的活性な欠陥の評価

金田裕一, 兼松正行, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

信学技報   Vol. 116 ( 118 ) page： 37-41   2016.6

Crystalline Structure of TiC Ultra Thin Layers Formed on Highly Oriented Pyrolytic Graphite by Chemical Reaction from Ti/Graphite System Reviewed

O. Nakatsuka, K. Hisada, S. Oida, A. Sakai, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 55 ( 6S3 ) page： 06JE02 (4 pages)   2016.6

Sn系IV族半導体混晶薄膜の成長と物性評価 Invited

志村洋介, 竹内和歌奈, 坂下満男, 黒澤昌志, 中塚理, 財満鎭明

信学技報   Vol. 116 ( 1 ) page： 23-26   2016.4

Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1-xSnx epitaxial layer Reviewed

J. Jeon, T. Asano, Y. Shimura, W. Takeuchi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 55 ( 4S ) page： 04EB13 (5 pages)   2016.3

Influence of Precursor Gas on SiGe Epitaxial Material Quality in Terms of Structural and Electrical Defects Reviewed

S. Ike, E. Simoen, Y. Shimura, A. Hikavyy, W. Vandervorst, R. Loo, W. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 55 ( 4S ) page： 04EJ11 (5 pages)   2016.3

Effect of Nitridation for SiO2/SiC Interface on Defects Properties near Conduction Band Edge Reviewed

W. Takeuchi, K. Yamamoto, N. Taoka, M.Sakashita, T. Kanemura, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 55 ( 4S ) page： 04ER13 (5 pages)   2016.3

Growth of ultra-high Sn content Ge1-xSnx epitaxial layer and its impact on controlling Schottky barrier height at metal/Ge interface Reviewed

A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 55 ( 4S ) page： 04EB12 (6 pages)   2016.3

Experimental observation of type-I energy band alignment in lattice matched Ge1-x-y SixSny/Ge heterostructures Reviewed

T. Yamaha, S. Shibayama, T. Asano, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett.   Vol. 108   page： 061909 (5 pages)   2016.2

Low thermal budget n-type doping into Ge(001) surface using ultraviolet laser irradiation in phosphoric acid solution Reviewed

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett.   Vol. 108   page： 052104 (4 pages)   2016.2

Defect and dislocation structures in low-temperature-grown Ge and Ge1-xSnxepitaxial layers on Si(110) substrates Reviewed

S. Kidowaki, T. Asano, Y. Shimura, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima

Thin Solid Films   Vol. 598   page： 72-81   2016.1

Characterization of crystallinity of Ge1-xSnx epitaxial layers grown using metal-organic chemical vapor deposition Reviewed

Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, O. Nakatsuka, and S. Zaima

Thin Solid Films   Vol. 602   page： 7-12   2016

Characterization of Shallow- and Deep-Level Defects of Undoped Ge1-xSnx Epitaxial Layers by Electrical Measurements Reviewed

W. Takeuchi, T. Asano, Y. Inuzuka, M. Sakashita, O. Nakatsuka, and S. Zaima

ECS J. Solid State Sci. Tech.   Vol. 5 ( 4 ) page： P3082-P3086   2015.12

Mobility Behavior of Si1-x-yGexSny Polycrystals Grown on Insulators Reviewed

T. Ohmura, T. Yamaha, M. Kurosawa, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

Trans. MRS-J   Vol. 40 ( 4 ) page： 351-354   2015.12

Reduction of Schottky barrier height at metal/n-Ge interface by introducing an ultra-high Sn content Ge1-xSnx interlayer Reviewed

A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima

Appl. Phys. Lett.   Vol. 107   page： 212103 (5 pages)   2015.11

Atom probe tomography study on Ge1-x-ySnxCy hetero-epitaxial film on Ge substrates Reviewed

E. Kamiyama, K. Sueoka, K. Terasawa, T. Yamaha, O. Nakatsuka, S. Zaima, K. Izunome, K. Kashima, and H. Uchida

Thin Solid Films   Vol. 592 ( A ) page： 54-58   2015.10

Characterization of crystallinity of Ge1-xSnx epitaxial layers grown using metal-organic chemical vapor deposition Reviewed

Y. Inuzuka, S. Ikea, T. Asanoa, W. Takeuchi, O. Nakatsuka, and S. Zaima

Thin Solid Films     page： in press   2015.10

Challenges of Energy Band Engineering with New Sn-Related Group IV Semiconductor Materials for Future Integrated Circuits Invited Reviewed

S. Zaima, O. Nakatsuka, T. Yamaha, T. Asano, S. Ike, A. Suzuki, M. Kurosawa, W. Takeuchi, M. Sakashita

ECS Trans.   Vol. 69 ( 10 ) page： 89-98   2015.10

Oxygen and germanium migration at low temperature influenced by the thermodynamic nature of the materials used in germanium metal-insulator-semiconductor structures Reviewed

K. Kato, N. Taoka, M. Sakashita, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett.   Vol. 107   page： 102102 (5 pages)   2015.9

Effect of Sn on crystallinity and electronic property of low temperature grown polycrystalline-Si1-x-yGexSny layers on SiO2 Reviewed

T. Yamaha, M. Kurosawa, T. Ohmura, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Solid State Electronics   Vol. 110   page： 54-58   2015.8

Epitaxial formation of Ni germanide on Ge(001) substrate by reactive deposition Reviewed

Y. Deng, O. Nakatsuka, A. Suzuki, M. Sakashita, and S. Zaima

Solid State Electronics   Vol. 110   page： 44-48   2015.8

Epitaxial growth and crystalline properties of Ge1-x-ySixSny on Ge(001) substrates Reviewed

T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Solid State Electronics   Vol. 110   page： 49-53   2015.8

Growth of Si1-x-ySnxCy ternary alloy layer on Si(001) substrate and characterization of its crystalline property Reviewed

T. Yamaha, M. Kurosawa, W. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 54 ( 8S1 ) page： 08KA11   2015.7

High-mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization Reviewed

W. Takeuchi, N. Taoka, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett.   Vol. 107   page： 022103 (4 pages)   2015.7

Ge1-xSnxエピタキシャル層中の欠陥へ及ぼす熱処理の効果

浅野孝典, 柴山茂久, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

電子情報通信学会技術研究報告   Vol. 115 ( 108 ) page： 63-68   2015.6

Epitaxial Ge1-xSnx layers grown by metal-organic chemical vapor deposition using Tertiary-butyl-germane and Tri-butyl-vinyl-tin Reviewed

Y. Inuzuka, S. Ike, T. Asano, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

ECS Solid State Lett.   Vol. 4 ( 8 ) page： P1-P3   2015.6

SiO2/SiC MOS界面の欠陥特性に酸窒化処理が与える影響 Invited

竹内和歌奈, 山本建策, 坂下満男, 金村髙司, 中塚理, 財満鎭明

電子情報通信学会技術研究報告   Vol. 115 ( 108 ) page： 27-30   2015.6

金属/Ge界面への超高Sn組成SnxGe1-x層導入による界面電気伝導特性の制御

鈴木陽洋, 柴山茂久, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

電子情報通信学会技術研究報告   Vol. 115 ( 108 ) page： 57-61   2015.6

Characterization of locally strained Ge1-xSnx/Ge fine structures by synchrotron X-ray microdiffraction Reviewed

S. Ike, O. Nakatsuka, Y. Moriyama, M. Kurosawa, N. Taoka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima

Appl. Phys. Lett.   Vol. 106   page： 182104 (5 pages)   2015.5

高Sn組成SiSnの形成とバンド構造　～ 直接遷移構造化を目指して ～ Invited

黒澤昌志, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

電子情報通信学会技術研究報告   Vol. 115 ( 18 ) page： 35-37   2015.4

Near-infrared light absorption by polycrystalline SiSn alloys grown on insulating layers Reviewed

M. Kurosawa, M. Kato, T. Yamaha, N. Taoka, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett.   Vol. 106   page： 171908 (5 pages)   2015.4

Influence of Interface Structure on Electrical Properties of NiGe/Ge Contacts Reviewed

Y. Deng, O. Nakatsuka, M. Sakashita, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 54 ( 5S ) page： 05EA01 (6 pages)   2015.4

Impact of Hydrogen Surfactant on Crystallinity of Ge1-xSnx Epitaxial Layers Reviewed

T. Asano, N. Taoka, K. Hozaki, W. Takeuchi, M. Sakashita, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 54 ( 4S ) page： 04DH15 (4 pages)   2015.3

エピタキシャル金属/ゲルマニウム接合の形成による界面電気伝導特性の制御 Invited

中塚理, 鄧云生, 鈴木陽洋, 坂下満男, 田岡紀之, 財満鎭明

電子情報通信学会技術研究報告   Vol. 114 ( 469 ) page： 17-22   2015.3

Formation, crystalline structure, and optical properties of Ge1-x-ySnxCy ternary alloy layers Reviewed

T. Yamaha, K. Terasawa, H. Oda, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys   Vol. 54 ( 4S ) page： 04DH08 (6 pages)   2015.2

Formation of chemically stable GeO2 on the Ge surface with pulsed metal-organic chemical vapor deposition Reviewed

S. Shibayama, T. Yoshida, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett.   Vol. 106   page： 062107 (4 pages)   2015.2

Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation Reviewed

N. Taoka, T. Asano, T. Yamaha, T. Terashima, O. Nakatsuka, I. Costina, P. Zaumseil, G. Capellini, S. Zaima, and T. Schroeder

Appl. Phys. Lett.   Vol. 106   page： 061107 (5 pages)   2015.2

GeO2薄膜の正方晶形成による化学的安定性の向上

柴山茂久, 吉田鉄兵, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第20回研究会）     page： 185-188   2015.1

Sn/Geコンタクトにおけるフェルミレベルピニングの軽減およびショットキー障壁高さの低減

鈴木陽洋, 鄧云生, 柴山茂久, 黒澤昌志, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第20回研究会）     page： 59-62   2015.1

Formation of high-quality oxide/Ge1-xSnx interface with high surface Sn content by controlling Sn migration Reviewed

K. Kato, N. Taoka, T. Asano, T. Yoshida, M. Sakashita, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett.   Vol. 105   page： 122103 (5 pages)   2014.9

Robustness of Sn precipitation during thermal oxidation of Ge1-xSnx on Ge(001) Reviewed

K. Kato, T. Asano, N. Taoka, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 53 ( 8S1 ) page： 08LD04 (8 pages)   2014.7

Interface properties of Al2O3/Ge structures with thin Ge oxide interfacial layer formed by pulsed metal organic chemical vapor deposition Reviewed

T. Yoshida, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, W. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 53 ( 8S1 ) page： 08LD03 (6 pages)   2014.7

Importance of Ge surface oxidation with high oxidation rate in obtaining low interface state density at oxide/Ge interfaces Reviewed

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 53 ( 8S1 ) page： 08LD02 (6 pages)   2014.7

多層セル型太陽電池用IV族多元系混晶の結晶成長と界面構造制御 Invited Reviewed

中塚理, 財満鎭明

日本結晶成長学会誌   Vol. 41 ( 2 ) page： 74-80   2014.7

［依頼講演］ “絶縁膜上におけるIV族半導体多結晶薄膜の低温形成 ～ 低融点Snの活用 ～ Invited

黒澤昌志, 田岡紀之, 池上浩, 竹内和歌奈, 坂下満男, 中塚理, 財満鎭明

電子情報通信学会技術研究報告   Vol. 114 ( 88 ) page： 91-95   2014.6

Sn/Geコンタクトにおけるフェルミレベルピニング現象の軽減

鈴木陽洋, 朝羽俊介, 横井淳, 黒澤昌志, 加藤公彦, 坂下満男, 田岡紀之, 中塚理, 財満鎭明

電子情報通信学会技術研究報告   Vol. 114 ( 88 ) page： 11-16   2014.6

Ge1-xSnxエピタキシャル成長における積層欠陥構造の制御

浅野孝典, 田岡紀之, 中塚理, 財満鎭明

電子情報通信学会技術研究報告   Vol. 114 ( 88 ) page： 21-25   2014.6

n型Ge単結晶中におけるSnと空孔関連欠陥との相互作用

竹内和歌奈, 田岡紀之, 坂下満男, 中塚理, 財満鎭明

電子情報通信学会技術研究報告   Vol. 114 ( 57 ) page： 113-118   2014.5

Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx- and strained Ge-based channels Reviewed

H.-Y. Chou, V. V. Afanas'ev, M. Houssa, A. Stesmans, B. Vincent, F. Gencarelli, Y. Shimura, C. Merckling, R. Loo, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett.   Vol. 104   page： 202107 (5 pages)   2014.5

Formation of high-quality Ge1-xSnx layer on Ge(110) substrate with strain-induced confinement of stacking faults at Ge1-xSnx/Ge interfaces Reviewed

T. Asano, N. Taoka, O. Nakatsuka and S. Zaima

Appl. Phys. Express   Vol. 7 ( 6 ) page： 061301 (3 pages)   2014.5

Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate Reviewed

N. Taoka, M. Fukudome, W. Takeuchi, T. Arahira, M. Sakashita, O. Nakatsuka, and S. Zaima

J. Appl. Phys.   Vol. 115   page： 173102 (7 pages).   2014.5

Impacts of AlGeO formation by post thermal oxidation of Al2O3/Ge structure on interfacial properties Reviewed

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Thin Solid Films   Vol. 557   page： 282–287   2014.4

Epitaxial formation and electrical properties of Ni germanide/Ge(110) contacts Reviewed

Y. S. Deng, O. Nakatsuka, J. Yokoi, N. Taoka, and S. Zaima

Thin Solid Films   Vol. 557   page： 84-89   2014.4

Characterization of Crystalline Structures of SiGe Substrate Formed by Traveling Liquidus-Zone Method for Devices with Ge/SiGe Reviewed

T. Yamaha, O. Nakatsuka, N. Taoka, K. Kinoshita, S. Yoda, and S. Zaima

Thin Solid Films   Vol. 557   page： 129-134   2014.4

Influence of Ge Substrate Orientation on Crystalline Structures of Ge1-xSnx Epitaxial Layers Reviewed

T. Asano, S. Kidowaki, M. Kurosawa, N. Taoka, O. Nakatsuka, and S. Zaima

Thin Solid Films   Vol. 557   page： 159–163   2014.4

Formation and characterization of locally strained Ge1-xSnx/Ge microstructures Reviewed

S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima

Thin Solid Films   Vol. 557   page： 164–168   2014.4

Analysis for positions of Sn atoms in epitaxial Ge1-xSnx film in low temperature depositions Reviewed

E. Kamiyama, K. Sueoka, O. Nakatsuka, N. Taoka, and S. Zaima, K. Izunome, K. Kashima

Thin Solid Films   Vol. 557   page： 173–176   2014.4

Importance of Control of Oxidant Partial Pressure on Structural and Electrical Properties of Pr-oxide Films Reviewed

K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Thin Solid Films   Vol. 557   page： 276–281   2014.4

Stabilized formation of tetragonal ZrO2 thin film with high permittivity Reviewed

K. Kato, T. Saito, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Thin Solid Films   Vol. 557   page： 192–196   2014.4

Formation and crystalline structure of Ni silicides on Si(110) substrate Reviewed

O. Nakatsuka, M. Hasegawa, K. Kato, N. Taoka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 53 ( 5S2 ) page： 05GA12 (5 pages)   2014.4

Observation of lattice spacing fluctuation and strain undulation around through-Si vias in wafer-on-wafer structures using X-ray microbeam diffraction Reviewed

N. Taoka, O. Nakatsuka, Y. Mizushima, H. Kitada, Y. S. Kim, T. Nakamura, T. Ohba, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 53 ( 5S2 ) page： 05GE03 (6 pages)   2014.4

Effect of thermal cleaning on formation of epitaxial Ni germanide layer on Ge(110) substrate Reviewed

Y. Deng, O. Nakatsuka, N. Taoka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 53 ( 5S2 ) page： 05GA06 (6 pages)   2014.4

Reduction of Schottky barrier height for n-type Ge contact by using Sn electrode Reviewed

A. Suzuki, S. Asaba, J. Yokoi, K. Kato, M. Kurosawa, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 53 ( 4S ) page： 04EA06 (6 pages)   2014.3

Large grain growth of Ge-rich Ge1-x Snx (x~0.02) on insulating surfaces using pulsed laser annealing in flowing water Reviewed

M. Kurosawa, N. Taoka, H. Ikenoue, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett.   Vol. 104   page： 061901 (3 pages)   2014.2

Defects Induced by Reactive Ion Etching in Ge Substrate Reviewed

Kusumandari, N. Taoka, W. Takeuchi, M. Sakashita, O. Nakatsuka, S. Zaima

Advanced Materials Research   Vol. 896   page： 241-244   2014.2

Al2O3/SiC MOS構造における伝導帯端近傍の電気特性

田岡紀之, 坂下満男, 中塚理, 財満鎭明

特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第19回研究会）     page： 205-208   2014.1

低界面準位密度を有するGe MOS構造を実現するGe表面の酸化条件

柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理,財満鎭明

特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第19回研究会）     page： 13-16   2014.1

固溶限を超えるSn組成を有するGe1-xSnx層中におけるSn原子の熱安定性

加藤公彦, 浅野孝典, 田岡紀之, 坂下満男, 竹内和歌奈, 中塚理, 財満鎭明

特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第19回研究会）     page： 37-40   2014.1

MOCVD法により形成した極薄GeO2を用いた Al2O3/GeOx/Ge 構造の電気的特性および構造評価

吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 田岡紀之, 竹内和歌奈, 中塚理, 財満鎭明

特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第19回研究会）     page： 131-134   2014.1

Effect of Sn atoms on incorporation of vacancies in epitaxial Ge1-xSnx film grown at low temperature Reviewed

E. Kamiyama, S. Nakagawa, K Sueoka, T. Ohmura, T. Asano, O. Nakatsuka, N. Taoka, S. Zaima, K. Izunome, and K. Kashima

Appl. Phys. Express   Vol. 7 ( 2 ) page： 021302 (3 pages)   2014.1

Al2O3/SiC MOS構造における伝導帯端近傍の電気特性

田岡紀之, 坂下満男, 中塚理, 財満鎭明

特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）     page： 205-208   2014.1

Al2O3/Ge構造に対する熱酸化機構の解明

柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）     page： 39-42   2014.1

テトラエトキシゲルマニウムを用いた極薄Ge酸化膜の形成

吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）     page： 151-154   2014.1

Pr 酸化膜/Ge構造におけるゲート金属が界面反応に与える影響

加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）     page： 155-158   2014.1

Reduction of Interface States Density Due to Post Oxidation with Formation of AlGeO Layer at Al2O3/Ge Interface Reviewed

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

ECS Trans.   Vol. 58 ( 9 ) page： 301-308   2013.10

Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications: Challenges and Opportunities Invited Reviewed

O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita, and S. Zaima

ECS Trans.   Vol. 58 ( 9 ) page： 149-155   2013.10

Characterization of Local Strain Structures in Heteroepitaxial Ge1-xSnx/Ge Microstructures by Using Microdiffraction Method Reviewed

S. Ike, Y. Moriyama, M. Kurosawa, N. Taoka, O. Nakatsuka, Y. Imai, S. Kimura, T. Tezuka, and S. Zaima,

ECS Trans.   Vol. 58 ( 9 ) page： 185-192   2013.10

Liquid-Sn-driven lateral growth of poly-GeSn on insulator assisted by surface oxide layer Reviewed

M. Kurosawa, N. Taoka, M. Sakashita, O. Nakatsuka, M. Miyao, and S. Zaima

Appl. Phys. Lett.   Vol. 103   page： 101904 (4 pages)   2013.9

Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al2O3/Ge structure Reviewed

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett.   Vol. 103   page： 082114 (4 pages)   2013.8

Broad defect depth distribution in germanium substrates induced by CF4 plasma Reviewed

Kusumandari, N. Taoka, W. Takeuchi, M. Fukudome, M. Sakashita, O. Nakatsuka, and S. Zaima

Appl. Phys. Lett.   Vol. 103   page： 033511 (4 pages)   2013.7

Development of epitaxial growth technology for Ge1-xSnx alloy and study of its properties for Ge nanoelectronics Invited Reviewed

O. Nakatsuka, Y. Shimura, W. Takeuchi, N. Taoka, and S. Zaima

Solid-State Electron.   Vol. 83   page： 82-86   2013.5

Epitaxial growth and anisotropic strain relaxation of Ge1-xSnx layers on Ge(1 1 0) substrates

T. Asano, Y. Shimura, O. Nakatsuka, and S. Zaima

Solid-State Electron.   Vol. 83   page： 71-75   2013.5

Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structure Reviewed

K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Solid-State Electron.   Vol. 83   page： 56-60   2013.5

Interfacial Reaction Mechanism in Al2O3/Ge Structure by Oxygen Radical

K. Kato, S. Shibayama, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 52   page： 04CA08 (7 pages)   2013.4

Influence of Sn Incorporation and Growth Temperature on Crystallinity of Ge1-xSnx Layers Heteroepitaxially Grown on Ge(110) Substrates Reviewed

T. Asano, Y. Shimura, O. Nakatsuka, and S. Zaima

Thin Solid Films   Vol. 531   page： 504-508   2013.3

Suppressive Effect of Interface Reaction and Water Absorption by Al Incorporation into Pr-oxide Film Reviewed

W. Takeuchi, K. Furuta, K .Kato, M. Sakashita, H. Kondo, O. Nakatsuka, and S. Zaima

J. Phys.: Conf. Ser.   Vol. 417   page： 012017 (6 pages)   2013.3

Effect of Interfacial Reactions in Radical Process on Electrical Properties of Al2O3/Ge Gate Stack Structure Reviewed

K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

J. Phys.: Conf. Ser.   Vol. 417   page： 012001   2013.3

Effects of Light Exposure during Plasma Processing on Electrical Properties of GeO2/Ge Structures Reviewed

Kusumandari, W. Takeuchi, K. Kato, S. Shibayama, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 52   page： 01AC04   2013.1

Al2O3/Ge構造に対する熱酸化機構の解明

柴山茂久, 加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）     page： 39-42   2013.1

Pr 酸化膜/Ge構造におけるゲート金属が界面反応に与える影響

加藤公彦, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）     page： 155-158   2013.1

テ トラエトキシゲルマニウムを用いた極薄Ge酸化膜の形成

吉田鉄兵, 加藤公彦, 柴山茂久, 坂下満男, 竹内和歌奈, 田岡紀之, 中塚理, 財満鎭明

特別研究会 「ゲートスタック研究会 ─材料・プロセス・評価の物理─」（第18回研究会）     page： 151-154   2013.1

Effect of atomic deuterium irradiation on initial growth of Sn and Ge1-xSnx on Ge(0 0 1) substrates Reviewed

T. Shinoda, O. Nakatsuka, Y. Shimura, S. Takeuchi, and S. Zaima

Appl. Surf. Sci.   Vol. 259 ( 15 ) page： 754-757   2012.10

Growth and Characterization of Heteroepitaxial Layers of Ge1-x-ySixSny Ternary Alloy Reviewed

T. Yamaha, O. Nakatsuka, S. Takeuchi, W. Takeuchi, N. Taoka, K. Araki, K. Izunome, and S. Zaima

ECS Trans.   Vol. 50 ( ９ ) page： 907-913   2012.10

Growth and Optical Properties of Ge1-xSnx Alloy Thin Films with a High Sn Content Invited Reviewed

S. Zaima, O. Nakatsuka, M. Nakamura, W. Takeuchi, Y. Shimura, and N. Taoka

ECS Trans.   Vol. 50 ( 9 ) page： 897-902   2012.10

Growth of Ge1-xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates Reviewed

M. Nakamura, Y. Shimura, S. Takeuchi, O. Nakatsuka, and S. Zaima

Thin Solid Films   Vol. 520 ( 8 ) page： 3201–3205   2012.2

Homogeneous Si0.5Ge0.5 bulk crystal growth as substrates for strained Ge thin films by the traveling liquidus-zone method Reviewed

K. Kinoshita, O. Nakatsuka, S. Yoda, and S. Zaima

Thin Solid Films   Vol. 520 ( 8 ) page： 3279–3282   2012.2

Improvement of Al2O3/Ge interfacial properties by O2-annealing Reviewed

S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

Thin Solid Films   Vol. 520 ( 8 ) page： 3397–3401   2012.2

Low temperature formation of Si1-x-yGexSny-on-insulator structures by using solid-phase mixing of Ge1-zSnz/Si-on-insulator substrates Reviewed

O. Nakatsuka, M. Mochizuki, Y. Shimura, T. Yamaha, and S. Zaima

Thin Solid Films   Vol. 520 ( 8 ) page： 3288–3292   2012.2

Homogeneous Si0.5Ge0.5 bulk crystal growth as substrates for strained Ge thin films by the traveling liquidus-zone method Reviewed

K. Kinoshita, O. Nakatsuka, S. Yoda, and S. Zaima

Thin Solid Films   Vol. 520 ( 8 ) page： 3279–3282   2012.2

In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates Reviewed

Y. Shimura, S. Takeuchi, O. Nakatsuka, B. Vincent, F. Gencarelli, T. Clarysse, W. Vandervorst, M. Caymax, R. Loo, A. Jensen, D.H. Petersen, and S. Zaima

Thin Solid Films   Vol. 520 ( 8 ) page： 3206–3210   2012.2

Crystallinity Improvement of Epitaxial Ge Grown on a Ge(110) Substrate by Incorporation of Sn Reviewed

Y. Shimura, T. Asano, O. Nakatsuka, and S. Zaima

Appl. Phys. Express   Vol. 5   page： 015501   2012.1

Characterization of Damage of Al2O3/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation Reviewed

Kusumandari, W.Takeuchi, K. Kato, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 51   page： 01AJ01   2012.1

Control of Interfacial Properties of Al2O3/Ge Gate Stack Structure using Radical Nitridation Technique Reviewed

K. Kato, S. Kyogoku, M. Sakashita, W. Takeuchi, H. Kondo, S. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 50 ( 10 ) page： 10PE02 (7 pages)   2011.10

Structural Analysis of Si-Based Nanodot Arrays Self-Organized by Selective Etching of SiGe/Si Films Reviewed

M. Takahashi, Y. Nakamura, J. Kikkawa, O. Nakatsuka, S. Zaima, and Akira Sakai

Jpn. J. Appl. Phys.   Vol. 50 ( 8 ) page： 08LB11 (4 pages)   2011.8

Formation of Ni(Ge1-xSnx) Layers with Solid-Phase Reaction in Ni/Ge1-xSnx/Ge Systems Reviewed

T. Nishimura, Y. Shimura, S. Takeuchi, B. Vincent, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima

Solid-State Electronics   Vol. 60 ( 1 ) page： 46-52   2011.6

Control of Strain Relaxation Behavior of Ge1-xSnx Layers Reviewed

Y. Shimura, S. Takeuchi, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima

Solid-State Electronics   Vol. 60 ( 1 ) page： 84-88   2011.6

Control of Interfacial Properties of Pr-oxide/Ge Gate Stack Structure by Introduction of Nitrogen Reviewed

K. Kato, H. Kondo, M. Sakashita, O. Nakatsuka, and S. Zaima

Solid-State Electronics   Vol. 60 ( 1 ) page： 70-74   2011.6

Ge1-xSnx stressors for strained-Ge CMOS Invited Reviewed

S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, and S. Zaima

Solid-State Electronics   Vol. 60 ( 1 ) page： 53-57   2011.6

Crystalline orientation dependence of electrical properties of Mn Germanide/Ge(1 1 1) and (0 0 1) Schottky contacts Reviewed

T. Nishimura, O. Nakatsuka, S. Akimoto, W. Takeuchi, and S. Zaima

Microelectron. Eng.   Vol. 88 ( 5 ) page： 605-609   2011.5

Characterization of Local Strain around Through-Silicon Via Interconnects by using X-ray Microdiffraction Reviewed

O. Nakatsuka, H. Kitada, Y. S. Kim, Y. Mizushima, T. Nakamura, T. Ohba, and S. Zaima

pn. J. Appl. Phys.   Vol. 50   page： 05ED03   2011.5

Formation of Palladium Silicide Thin Layers on Si(110) Substrates Reviewed

R. Suryana, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 50   page： 05EA09   2011.5

Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer Reviewed

C. Merckling, X. Sun, Y. Shimura, A. Franquet, B. Vincent, S. Takeuchi, W. Vandervorst, O. Nakatsuka, S. Zaima, R. Loo, and M. Caymax

Appl. Phys. Lett.   Vol. 98   page： 192110   2011.5

Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors Reviewed

B. Vincent, Y. Shimura, S. Takeuchi, T. Nishimura, G. Eneman, A. Firrincieli, J. Demeulemeester, A. Vantomme, T. Clarysse, O. Nakatsuka, S. Zaima, J. Dekoster, M. Caymax, and R. Loo

,Microelectron. Eng.   Vol. 88 ( 4 ) page： 342-346   2011.4

Analysis of Local Leakage Current of Pr Oxide Thin Films with Conductive Atomic Force Microscopy Reviewed

M. Adachi, M. Sakashita, H. Kondo, W. Takeuchi, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 50   page： 04DA08   2011.4

Effect of Pr Valence State on Interfacial Structure and Electrical Properties of Pr-oxide/PrON/Ge Gate Stack Structure Reviewed

K. Kato, M. Sakashita, W. Takeuchi, H. Kondo, O. Nakatsuka, and S. Zaima

Jpn. J. Appl. Phys.   Vol. 50   page： 04DA17   2011.4

Pr酸化膜/Si構造へのAl導入による界面反応抑制効果

古田和也, 竹内和歌奈, 加藤公彦, 坂下満男, 近藤博基, 中塚理, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第16回研究会     page： 51-54   2011.1

電流検出型原子間力顕微鏡を 用いた欠陥に起因するPr酸化膜のリーク電流機構の解明

足立正樹, 加藤雄三, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第16回研究会     page： 123-126   2011.1

Pr酸化膜/PrON/Ge構造におけるPrの化学結合状態が電気的特性に及ぼす影響

加藤公彦, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第16回研究会     page： 99-102   2011.1

Al2O3界 面層およびラジカル窒化法によるHigh-k/Ge界面構造および電気的特性の制御

加藤公彦, 京極真也, 坂下満男, 竹内和歌奈, 近藤博基, 中塚理, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第16回研究会     page： 55-58   2011.1

GeSn Technology: Impact of Sn on Ge CMOS Applications Invited Reviewed

S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi, B. Vincent, F. Gencarelli, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, M. Caymax, and R. Loo

ECS Trans.   Vol. 41 ( 7 ) page： 231-238   2011

Low temperature growth of Ge1-xSnx buffer layers for tensile-strained Ge layers Reviewed

Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, S. Zaima

Thin Solid Films   Vol. 518 ( 6 ) page： S2-S5   2010

Formation of Palladium Silicide on Heavily Doped Si(001) Substrates Using Ti Intermediate Layer Reviewed

R. Suruyana, O. Nakatsuka, S. Zaima

Jpn. J. Appl. Phys.   Vol. 49   page： 05FA09 (5 pages)   2010

Mobility Behavior of Ge1-xSnx Layers Grown on Silicon-on-Insulator Substrates Reviewed

O. Nakatsuka, N. Tsutsui, Y. Shimura, S. Takeuchi, A. Sakai, S. Zaima

Jpn. J. Appl. Phys.   Vol. 49   page： 04DA10 (4 pages)   2010

Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing Reviewed

T. Kato, Y. Nakamura, J. Kikkawa, A. Sakai, E. Toyoda, K. Izunome, O. Nakatsuka, S. Zaima, Y. Imai, S. Kimura, O. Sakata

Thin Solid Films   Vol. 518 ( 6 ) page： S147-W150   2010

Novel Method to Introduce Uniaxial Tensile Strain in Ge by Microfabrication of Ge/Si1-xGex Structures on Si(001) Substrates Reviewed

T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, M. Ogawa, and S. Zaima

Solid-State Electronics   Vol. 53 ( 11 ) page： 1198-1201   2009.11

Microstructures in directly bonded Si substrates Reviewed

Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, S. Kimura, T. Sakata, H. Mori

Solid-State Electronics   Vol. 53 ( 8 ) page： 837-840   2009.8

Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile-Strained Ge Layers Reviewed

Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima

Jpn. J. Appl. Phys. 48   Vol. 48   page： 04C130   2009.4

Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates Reviewed

E. Toyoda, A. Sakai, H. Isogai, T. Senda, K. Izunome, K. Omote, O. Nakatsuka, S. Zaima

Jpn. J. Appl. Phys.   Vol. 48   page： 021208   2009.2

Mechanical Properties and Chemical Reactions at the Directly Bonded Si-Si Interface Reviewed

E. Toyoda, A. Sakai, T. Senda, H. Isogai, K. Izunome, O. Nakatsuka, M. Ogawa, S. Zaim

Jpn. J. Appl. Phys.   Vol. 48   page： 011202-1-5   2009.1

Control of Dislocations and Sn Precipitations for Fabrication of Tensile-strained Ge on Ge1-xSnx Buffer Layer Reviewed

Y. Shimura, N. Tsutsui, O. Nakatsuka, A. Sakai, and S. Zaima

Trans. MRS-J   Vol. 34 ( 2 ) page： 301-304   2009

Plasma surface treatment of polymers with inductivity-coupled RF plasmas driven by low-inductance antenna units Reviewed

Y. Setsuhara, K. Cho, K. Takenaka, A. Ebe, M. Shiratani, M. Sekine, M. Hori, E. Ikenaga, H. Kondo, O. Nakatsuka, S. Zaima

Thin Solid Films   Vol. 518 ( 3 ) page： 1006-1011   2009

Ferromagnetism and Electronic structures of Nonstoichiometric Heusler-Alloy Fe3-xMnxSi Epilayers Grown on Ge(111) Reviewed

K. Hamaya, H. Itoh, O. Nakatsuka, K. Ueda, K. Yamamoto, M. Itakura, T. Taniyama, T. Ono, M. Miyao

Phys. Rev. Lett.   Vol. 102   page： 137204 (4 pages)   2009

Formation of Uniaxial Tensile-strained Ge by Using Micro-patterning of Ge/Si1-xGe x/Si Structures Reviewed

T. Mizutani, O. Nakatsuka, A. Sakai, H. Kondo, and S. Zaima

Trans. MRS-J   Vol. 34 ( 2 ) page： 305-308   2009

*Silicide and germanide technology for contacts and gates in MOSFET applications Invited Reviewed

S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, and M. Ogawa

Thin Solid Films   Vol. 517 ( 1 ) page： 80-83   2008.8

Characterization of bonding structures of directly bonded hybrid crystal orientation substrates Reviewed

E. Toyoda, A. Sakai, O. Nakatsuka, H. Isogai, T. Senda, K. Izunome, M. Ogawa, and S. Zaima

Thin Solid Films   Vol. 517 ( 1 ) page： 323-326   2008.8

Tensile strained Ge layers on strain-relaxed Ge1-xSnx/virtual Ge substrates Reviewed

S. Takeuchi, A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima

Thin Solid Films   Vol. 517 ( 1 ) page： 159-162   2008.8

Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method Reviewed

S. Takeuchi, Y. Shimura, O. Nakatsuka, S. Zaima, M. Ogawa, and A. Sakai

Appl. Phys. Lett.   Vol. 92   page： 231916   2008.6

Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth Reviewed

S. Oida, A. Sakai, O. Nakatsuka, M. Ogawa, and S. Zaima

Appl. Surf. Sci.   Vol. 47   page： 3742-3747   2008.5

Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi2/Si Schottky Contacts Formed from Ni/Ti/Si System Reviewed

O. Nakatsuka, A. Suzuki, S. Akimoto, A. Sakai, M. Ogawa and S. Zaima

Jpn. J. Appl. Phys.   Vol. 47 ( 4 ) page： 2402-2406   2008.4

Scanning Tunneling Microscopy Observation of Initial Growth of Sn and Ge1-xSnx Layers on Ge(001) Substrates Reviewed

M. Yamazaki, S. Takeuchi, O. Nakatsuka, A. Sakai, M. Ogawa, and S. Zaima

Appl. Surf. Sci.   Vol. 254 ( 19 ) page： 6048-60651   2008.3

Effect of alcohol sources on synthesis of single-walled carbon nanotubes Reviewed

S. Oida, A. Sakai, O. Nakatsuka, M. Ogawa and S. Zaima

Appl. Surf. Sci.   Vol. 254 ( 23 ) page： 7697-7702   2008.2

Ge基板上に作製したPr酸化膜の評価 Reviewed

坂下満男, 鬼頭伸幸, 加藤亮祐, 近藤博基, 中塚理, 酒井朗, 小川正毅, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 -材料・プロセス・評価の物理-”（第13回研究会）     page： 237-242   2008.2

Contact properties of epitaxial NiSi2/heavily doped Si structures formed from Ni/Ti/Si systems Reviewed

S. Akimoto, O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, S. Zaima

Advanced Metallization Conference (AMC)     page： 101-105   2008

Interface and defect control for group IV channel engineering

A. Sakai, Y. Ohara, T. Ueda, E. Toyoda, K. Izunome, S. Takeuchi, Y. Shimura, O. Nakatsuka, M. Ogawa, S. Zaima, S. Kimura

ECS Transactions   Vol. 16 ( 10 ) page： 687-698   2008

パルスレーザー蒸着法によるGe基板上へのPr酸化膜の作製とその構造及び電気的特性評価

鬼頭伸幸, 坂下満男, 酒井朗, 中塚理, 近藤博基, 小川正毅, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 –材料・プロセス・評価の物理-”（第12回研究会）     page： 251-256   2007.2

Strain relaxation of patterned Ge and SiGe layers on Si(001) substrates

S. Mochizuki, A. Sakai, O. Nakatsuka, H. Kondo, K. Yukawa, K. Izunome, T. Senda, E. Toyoda, M. Ogawa, and S. Zaima

Semicond. Sci. Tech.   Vol. 22 ( 1 ) page： S132-S136   2007.1

Ge(001)表面の酸素エッチングおよび初期酸化過程の原子スケール評価

山崎理弘, 若園恭伸, 酒井朗, 中塚理, 竹内正太郎, 小川正毅, 財満鎭明

特別研究会研究報告“ゲートスタック研究会 –材料・プロセス・評価の物理-”（第12回研究会）     page： 197-202   2007.1

Growth and structure evaluation of strain-relaxed Ge1-xSnx buffer layers grown on various types of substrates Reviewed

S. Takeuchi, A. Sakai, K. Yamamoto, O. Nakatsuka, M. Ogawa, and S. Zaima

Semicond. Sci. Tech.   Vol. 22 ( 1 ) page： S231-S235   2007.1

Silicide and germanide technology for contacts and metal gates in MOSFET applications

S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa

ECS Transactions   Vol. 11 ( 6 ) page： 197-205   2007

Impact of Pt incorporation on thermal stability of NiGe layers on Ge(001) substrates

O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, S. Zaima

Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007     page： 87-88   2007

Electrical properties of epitaxial NiSi2/Si contacts with extremely flat interface formed in Ni/Ti/Si(0 0 1) system Reviewed

O. Nakatsuka, A. Suzuki, A. Sakai, M. Ogawa, and S. Zaima

Microelectron. Eng.   Vol. 83 ( 11-12 ) page： 2272-2276   2006.11

Ni-Silicide/Si and SiGe(C) Contact Technology for ULSI Applications Invited

O. Nakastuka, S. Zaima, A. Sakai, and M. Ogawa

Proceedings of the 14th annual IEEE International Conference on Advanced Thermal Processing of Semiconductors     page： 31-37   2006.10

Control of misfit dislocations in strain-relaxed SiGe buffer layers on SOI substrates Reviewed

N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, M. Ogawa and S. Zaima

Thin Solid Films   Vol. 508 ( 1-2 ) page： 147-151   2006.6

*Local strain in SiGe/Si heterostructures analyzed by X-ray microdiffraction Reviewed

S. Mochizuki, A. Sakai, N. Taoka, O. Nakatsuka, S. Takeda, S. Kimura, M. Ogawa, and S. Zaima

Thin Solid Films   Vol. 508 ( 1-2 ) page： 128-131   2006.6

Initial Growth Process of TiN Films in Ultrahigh-Vacuum Rapid Thermal Chemical Vapor Deposition Reviewed

Y. Okuda, S. Naito, O. Nakatsuka, H. Kondo, T. Okuhara, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys.   Vol. 45 ( 1A ) page： 49-53   2006.1

Dislocation morphology and crystalline mosaicity in strain-relaxed SiGe buffer layers on SOI

A. Sakai, N. Taoka, O. Nakatsuka, M. Ogawa, S. Zaima

IEEJ Transactions on Electronics, Information and Systems   Vol. 126 ( 9 ) page： 1083-1087   2006

Ni silicide and germanide technology for contacts and metal gates in MOSFET applications

S. Zaima, O. Nakatsuka, H. Kondo, M. Sakashita, A. Sakai, M. Ogawa

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings     page： 322-325   2006

Scanning tunneling microscopy study on the reaction of oxygen with clean Ge(001) surfaces

A. Sakai, Y. Wakazono, O. Nakatsuka, S. Zaima, M. Ogawa

ECS Transactions   Vol. 2 ( 7 ) page： 1197-1203   2006

Thermal stability and electrical properties of Ni-silicide on C-incorporated Si Reviewed

O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, S. Zaima, J. Murota, and Y. Yasuda

Proc. of Advanced Metallization Conference 2004 (AMC2004)     page： 293-298   2005.10

*Low Temperature Formation of Epitaxial NiSi2 Layers with Solid-Phase Reaction in Ni/Ti/Si(001) Systems Reviewed

O. Nakatsuka, K. Okubo, Y. Tsuchiya, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys.   Vol. 44 ( 5A ) page： 2945-2947   2005

SiGeバッファ層の歪緩和および転位構造制御 Reviewed

田岡紀之, 酒井朗, 望月省吾, 中塚理, 小川正毅, 財満鎭明

日本結晶成長学会誌   Vol. 32   page： 89-98   2005

Analysis of microstructures in SiGe buffer layers on silicon-on-insulator substrates Reviewed

N. Taoka, A. Sakai, S. Mochizuki, O. Nakatsuka, M. Ogawa, S. Zaima, T. Tezuka, N. Sugiyama, and S. Takagi

Jpn. J. Appl. Phys.   Vol. 44 ( 10 ) page： 7356-7363   2005

*Improvement in NiSi/Si contact properties with C-implantation Reviewed

O. Nakatsuka, K. Okubo, A. Sakai, M. Ogawa, Y. Yasuda, and S. Zaima

Microelectronic Engineering   Vol. 82 ( 3-4 ) page： 479-484   2005

Pure-edge dislocation network for strain-relaxed SiGe/Si(001) systems Reviewed

A. Sakai, N. Taoka, O. Nakatsuka, S. Zaima, and Yukio Yasuda

Appl. Phys. Lett.   Vol. 86   page： 221916-221918   2005

Initial growth behaviors of SiGeC in SiGe and C alternate deposition Reviewed

S. Takeuchi, O. Nakatsuka, Y. Wakazono, A. Sakai, S. Zaima, and Y. Yasuda

Materials Science in Semiconductor Processing   Vol. 8 ( 1-3 ) page： 5-9   2005

Growth and characterization of strain-relaxed SiGe buffer layers on Si(001) substrates with pure-edge misfit dislocations Reviewed

N. Taoka, A. Sakai, T. Egawa, O. Nakatsuka, S. Zaima, and Y. Yasuda

Materials Science in Semiconductor Processing   Vol. 8 ( 1-3 ) page： 131-135   2005

Influence of structural variation of Ni silicide thin films on electrical property for contact materials Reviewed

K. Okubo, Y. Tsuchiya, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys.   Vol. 43 ( 4B ) page： 1896-1900   2004

Si及びSi1-x-yGexCy上のNiシリサイド形成 Invited

中塚理, 酒井朗, 財満鎭明

電気学会研究会資料 電子材料研究会   Vol. EFM-04 ( 41-48 ) page： 25-30   2004

Influence of C incorporation on the initial growth of epitaxial NiSi2 on Si(100) Reviewed

E. Okada, O. Nakatsuka, S. Oida, A. Sakai, S. Zaima, and Y. Yasuda

Appl. Surf. Sci.   Vol. 237 ( 1-4 ) page： 150-155   2004

Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe(C) contacts Reviewed

S. Zaima, O. Nakatsuka, A. Sakai, J. Murota, and Y. Yasuda

Appl. Surf. Sci.   Vol. 224 ( 1-4 ) page： 215-221   2004

Influence of Si1-xGex interlayer on the initial growth of SiGeC on Si(100) Reviewed

S. Ariyoshi, S. Takeuchi, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda

Appl. Surf. Sci.   Vol. 224 ( 1-4 ) page： 117-121   2004

Dislocation structures and strain-relaxation in SiGe buffer layers on Si (0 0 1) substrates with an ultra-thin Ge interlayer Reviewed

T. Yamamoto, A. Sakai, T. Egawa, N. Taoka, O. Nakatsuka, S. Zaima, and Y. Yasuda,

Appl. Surf. Sci.   Vol. 224 ( 1-4 ) page： 108-112   2004

Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(0 0 1) substrates Reviewed

T. Egawa, A. Sakai, T. Yamamoto, N. Taoka, O. Nakatsuka, S. Zaima and Y. Yasuda

Appl. Surf. Sci.   Vol. 224 ( 1-4 ) page： 104-107   2004

High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems Reviewed

K. Kobayashi, M. Yabashi, Y. Takata, T. Tokushima, S. Shin, K. Tamasaku, D. Miwa, T. Ishikawa, H. Nohira, T. Hattori, Y. Sugita, O. Nakatsuka, A. Sakai, and S. Zaima

Appl. Phys. Lett.   Vol. 83 ( 5 ) page： 1005-1007   2003

Development of Ni/Al and MUM ohmic contact materials for p-type 4H-SiC Reviewed

R. Konishi, R. Yasukochi, O. Nakatsuka, Y. Koide, M. Moriyama and M. Murakami

Mater. Sci. Eng. B   Vol. 98 ( 3 ) page： 286-293   2003

Effect of Al interlayers on Two-Step Epitaxial Growth of CoSi2 on Si(100) Reviewed

O. Nakatsuka, H. Onoda , E. Okada, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda

Appl. Surf. Sci.   Vol. 216 ( 1-4 ) page： 174-180   2003

Ultra-high vacuum rapid thermal chemical vapor deposition for formation of TiN as barrier metals Reviewed

S. Naito, M. Okada, O. Nakatsuka, T. Okuhara, A. Sakai, S. Zaima, and Y. Yasuda,

Rapid Thermal Processing for Future Semiconductor Devices     page： 29-35   2003

Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen Reviewed

R. Takahashi, Y. Kobayashi, H. Ikeda, M. Sakashita, O. Nakatsuka, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys.   Vol. 42 ( 4B ) page： 1966-1970   2003

Electrical properties and solid-phase reactions in Ni/Si(100) contacts Reviewed

Y. Tsuchiya, A. Tobioka, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda

Jpn. J. Appl. Phys.   Vol. 41 ( 4B ) page： 2450-2454   2002

Low resistance TiAl ohmic contacts with multi-layered structure for p-type 4H-SiC Reviewed

O. Nakatsuka, T. Takei, Y. Koide, and M. Murakami

Mater. Trans.   Vol. 43 ( 7 ) page： 1684-1688   2002

CoAl ohmic contact materials with improved surface morphology for p-type 4H-SiC Reviewed

O. Nakatsuka, Y. Koide, and M. Murakami

Proc. of Silicon Carbide and Related Materials 2001 (MATERIALS SCIENCE FORUM)   Vol. 389 ( 3 ) page： 885-888   2002

Electrical properties of Ni silicide/Si contact Reviewed

Y. Tsuchiya, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima, and Y. Yasuda

Proc. of Advanced Metallization Conference 2001 (AMC2001)     page： 679-684   2001

Dependence of contact resistivity on impurity concentration in Co/Si systems Reviewed

O. Nakatsuka, T. Ashizawa, K. Nakai, A. Tobioka, A. Sakai, S. Zaima, and Y. Yasuda

Appl. Surf. Sci.   Vol. 159-160   page： 149-153   2000

Interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts with rapid thermal annealing Invited Reviewed

Y. Yasuda, O. Nakatsuka, and S. Zaima

Thin Solid Films   Vol. 373   page： 73-78   2000

Contact resistivities and electrical properties of Co/Si contacts by rapid thermal annealing Reviewed

O. Nakatsuka, T. Ashizawa, H. Iwano, S. Zaima, and Y. Yasuda

Proc. of Advanced Metallization and Interconnect Systems for ULSI Applications in 1998     page： 605-611   1999

Effect of Ge atoms on interfacial reactions of Ti/ and Zr/Si1-xGex/Si contacts Reviewed

H. Iwano, H. Hayashi, M. Yoshinaga, O. Nakatsuka, S. Zaima, and Y. Yasuda

Proc. of Advanced Metallization and Interconnect Systems for ULSI Applications in 1998     page： 599-604   1999

Conductance oscillations in hopping conduction systems fabricated by focus ion beam implantation Reviewed

H. Kondo, H. Iwano, O. Nakatsuka, K. Kaga, S. Zaima, and Y Yasuda

Jpn. J. Appl. Phys.   Vol. 36 ( 6B ) page： 4046-4048   1997

Epitaxial growth of strain‐relaxed and high-Sn-content n-Ge1-xSnx on Si(111) substrate with Ge buffer layer Invited International conference

A. Huang, S. Shibayama, and O. Nakatsuka

The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT) 

HfO2-ZrO2系の強誘電相発現におけるウェット熱処理の効果

柴山茂久, 永野丞太郎, 坂下満男, 中塚理

応用物理学会 薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第26回）  2021.1.23 

低仕事関数金属/4H-SiC界面におけるMIGSの影響

土井拓馬, 柴山茂久, 坂下満男, 清水三聡, 中塚理

応用物理学会 薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会「電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―」（第26回）  2021.1.26 

低仕事関数金属を用いたn型4H-SiCに対する低ショットキー障壁コンタクトの実現

土井拓馬, 柴山茂久, 坂下満男, 清水三聡, 中塚理

先進パワー半導体分科会第7回講演会  2021.1.22 

GeSn系Ⅳ族混晶半導体の創製と結晶・電子物性制御 Invited

中塚理

第5回TIA-EXA広域エレクトロニクス融合セミナー ～革新デバイスに向けた新材料と集積技術～  2020.12.9 

Heteroepitaxy and Strain Engineering of Germanium-Silicon-Tin Ternary Alloy Semiconductor Thin Films for Energy Band Design Invited International conference

O. Nakatsuka, S. Shibayama, M. Kurosawa, and M. Sakashita

Pacificrim Meeting on Electrochemical and Solid-State Science (PRiME2020) 

Crystal Growth of Epitaxial 3C-SiC Thin Film on Si Substrate By Chemical Vapor Deposition using Single Precursor of Vinylsilane International conference

T. Doi, K. Hashimoto, W. Takeuchi, and O. Nakatsuka

Pacificrim Meeting on Electrochemical and Solid-State Science (PRiME2020) 

Understanding wet annealing effect on phase transition and ferroelectric phase formation for Hf1-xZrxO2 film International conference

S. Shibayama, J. Nagano, M. Sakashita, and O. Nakatsuka

2020 Inthernational Conference on Solid State Devices and Materials (SSDM2020) 

コンタクト抵抗率低減のための金属/IV族半導体界面制御技術 Invited

中塚理, 柴山茂久, 坂下満男

第84回半導体・集積回路技術シンポジウム 

Ge1-xSnx溶融成長時に生じる偏析現象の理解

中尾天哉, 西島泰樹, 清水智, 角田功, 中塚理, 黒澤昌志

第81回応用物理学会秋季学術講演会 

多層ゲルマナンフレークからの水素脱離

伊藤麻維, 洗平昌晃, 大田晃生, 中塚理, 黒澤昌志

第81回応用物理学会秋季学術講演会  2020.9.9 

GaAs(001)基板上におけるGe1−x−ySixSny薄膜のエピタキシャル成長

中田壮哉, 詹天卓, 富田基裕, 渡邉孝信, 中塚理, 黒澤昌志

第81回応用物理学会秋季学術講演会  2020.9.9 

絶縁膜上における極薄Ge薄膜の固相成長

大石遼, 黒澤昌志, 中塚理

第81回応用物理学会秋季学術講演会  2020.9.9 

GeSn系IV族混晶ヘテロ構造の結晶成長と光電物性制御 Invited

中塚 理

阪大CSRN 第二回異分野研究交流会 「半導体・ナノカーボン系」  2020.8.28 

In-situ Sb Doping into Ge1−xSnx Epitaxial Layer toward Enhancement of Photoluminescence Intensity International conference

M. Fukuda, J. Jeon, M. Sakashita, S. Shibayama, M. Kurosawa, and O. Nakatsuka

The 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII) 

Crystal Growth and Characterization of Group-IV Alloy Semiconductor Heterostructures for Future Electronic Devices Invited International conference

O. Nakatsuka, M. Kurosawa, S. Shibayama, and M. Sakashita, S. Zaima

The 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII) 

Ferroelectric Phase Evolution of Undoped ZrO2 Thin Film by Wet O2 Annealing Process International conference

S. Shibayama, J. Nagano, M. Sakashita, O. Nakatsuka

2019 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES - SCIENCE AND TECHNOLOGY - (IWDTF2019) 

Saturation of Activated Sb Atom in Heavily Sb-Doped Ge Epitaxial Thin Films International conference

J. Jeon, S. Shibayama, S. Zaima, and O. Nakatsuka

International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019) 

Thermoelectric properties of silicon germanium wires with a composition gradient International conference

M. Nakata, O. Nakatsuka, M. Tomita, T. Watanabe, and M. Kurosawa

International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019) 

Theoretical Investigation of Self-organization Behavior of Si0.5Sn0.5 Nano-particles International conference

Y. Nagae, M. Kurosawa, and O. Nakatsuka

International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019) 

Development of in-situ cyclic metal layer oxidation to form abrupt Al2O3/4H-SiC interface International conference

T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka

International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019) 

Optoelectronic Property of GeSn and GeSiSn Heterostructure International conference

M. Fukuda, M. Sakashita, S. Shibayama, M. Kurosawa, S. Zaima, and O. Nakatsuka

International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019) 

Improvement of thermoelectric properties of Si1-x-yGexSny thin films by ion implantation and rapid thermal annealing International conference

Y. Peng, L. Miao, M. Kurosawa, and O. Nakatsuka

International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019) 

Model development of MOCVD growth for realizing high-Sn-content Ge1-xSnx epitaxial layer ~ What physical properties are required for precursors? ~ International conference

Y. Miki, S. Shibayama, S. Zaima, and O. Nakatsuka

International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019) 

Saturation of Sb1+ Concentration in Heavily Sb-doped n+-Ge Epitaxial Layers International conference

J. Jeon, S. Shibayama, and O. Nakatsuka

Advanced Metallization Conference 2019: 29th Asian Session (ADMETA Plus 2019) 

Influence of Dopant on Thermoelectric Properties of Si-rich Poly-Si1-xSnx Layers Grown on Insulators International conference

K. Sato, O. Nakatsuka, and M. Kurosawa

2019 International Conference on Solid State Devices and Materials (SSDM 2019) 

Impact of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC (0001) MOSFET International conference

W. Takeuchi, K. Kutsuki, E. Kagoshima, T. Onishi, S. Iwasaki, M. Sakashita, H. Fujiwara, and O. Nakatsuka

2019 International Conference on Solid State Devices and Materials (SSDM 2019) 

In-situ Cyclic Metal Layer Oxidation for Further Improving Interface Properties of Al2O3/4H-SiC(0001) Gate Stacks International conference

T. Doi, S. Shibayama, W. Takeuchi, M. Sakashita, N. Taoka, M. Shimizu, and O. Nakatsuka

2019 International Conference on Solid State Devices and Materials (SSDM 2019) 

Strain Relaxation Enhancement of Ge1-x-ySixSny Epitaxial Layer on Ge Substrate Using Ion-Implantation Method International conference

H. Sofue, M. Fukuda, S. Shibayama, S. Zaima, and O. Nakatsuka

2019 International Conference on Solid State Devices and Materials (SSDM 2019) 

Fermi Level Pinning at Metal/4H-SiC Contact Induced by SiCxOy Interlayer International conference

K. Hashimoto, T. Doi, S. Shibayama, and O. Nakatsuka

2019 International Conference on Solid State Devices and Materials (SSDM 2019) 

GeSn and GeSiSn Heterostructures for Optoelectronic Applications Invited International conference

O. Nakatsuka, M. Fukuda, M. Kurosawa, S. Shibayama, M. Sakashita, and S. Zaima

2019 IEEE Photonics Society Summer Topicals Meeting Series 

Further reduction of Schottky barrier height of Hf-germanide/n-Ge(001) contacts by forming epitaxial HfGe2 International conference

K. Senga, S. Shibayama, M. Sakashita, S. Zaima, and O. Nakatsuka

19th International Workshop on Junction Technology 2019 (IWJT2019) 

Development and challenges of group-IV alloy semiconductors for nanoelectronic applications Invited International conference

S. Zaima, O. Nakatsuka, M. Kurosawa, M. Sakashita, and S. Shibayama

The Eleventh International Conference on High-Performance Ceramics (CICC-11) 

Tin-incorporation effect on thermoelectric properties of p-type polycrystalline Si1-xGex layers grown on SiO2 International conference

Y. Peng, L. Miao, J. Gao, M. Kurosawa, O. Nakatsuka, and S. Zaima

The Eleventh International Conference on High-Performance Ceramics (CICC-11) 

Crystalline and Electrical Properties of Ge1-xSnx/Ge1-x-ySixSny QuantumWell Structures International conference

G. R. Suwito, M. Fukuda, S. Shibayama, M. Sakashita, O. Nakatsuka, and S. Zaima

Compoud Semiconductor Week 2019 (CSW 2019) 

Formation of Strain-relaxed Ge1-x-ySixSny Epitaxial Layer using Ionimplanted Ge Substrate International conference

H. Sofue, M. Fukuda, S. Shibayama, O. Nakatsuka, and S. Zaima

11th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 12th International Conference on Plasma-Nano Technology and Science (ISPlasma 2019 / IC-PLANTS 2019) 

GeSn-related group-IV semiconductor heterostructures for electronic and optoelectronic applications Invited International conference

O. Nakatsuka, M. Fukuda, M. Kurosawa, M. Sakashita, and S. Zaima

12th International WorkShop on New Group IV Semiconductor Nanoelectronics 

Formation of Nickel Stanogermanide/Heavily Doped n+-Ge1-xSnx Structure with Ultra-Low Contact Resistivity International conference

J. Jeon, A. Suzuki, S. Shibayama, O. Nakatsuka, and S. Zaima

12th International WorkShop on New Group IV Semiconductor Nanoelectronics 

Study of factors to limit increasing Sn content in Ge1-xSnx for MOCVD method International conference

Y. Miki, W. Takeuchi, S. Shibayama, O. Nakatsuka, and S. Zaima

12th International WorkShop on New Group IV Semiconductor Nanoelectronics 

Formation and Optoelectronic Characterization of Strain-relaxed Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-heterostructure International conference

M. Fukuda, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) in conjunction with 26th International Colloquium on Scanning Probe Microscopy (ICSPM26) 

Thermoelectric Performance of Polycrystalline Si1-x-yGexSny Ternary Alloy Layer Prepared with Ion Implantation International conference

Y. Peng, M. Kurosawa, O. Nakatsuka, L. Miao, J. Gao, and S. Zaima

14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14) in conjunction with 26th International Colloquium on Scanning Probe Microscopy (ICSPM26) 

Impact of Crystalline Property of SixGe1-x-ySny Ternary Alloy Interlayer on Schottky Barrier Height Engineering of Metal/Ge Contact International conference

O. Nakatsuka, A. Suzuki, M. Sakashita, and S. Zaima

Advanced Metallization Conference 2018: 28th Asian Session (ADMETA Plus 2018) 

Composition and Strain Engineering of New Group-IV Thermoelectric Materials Invited International conference

M. Kurosawa, Y. Imai, T. Iwahashi, K. Takahashi, M. Sakashita, O. Nakatsuka, and S. Zaima

AiMES 2018 Meeting 

Formation of laterally graded SixGe1-x stripes for thermoelectric generator International conference

M. Nakata, K. Takahashi, T. Nishijima, S. Shimizu, I. Tsunoda, O. Nakatsuka, S. Zaima, T. Watanabe, and M. Kurosawa

The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-3) 

Growth and electronic properties of GeSn-related group-IV alloy semicondcutor thin films Invited International conference

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

2018 International Conference on Solid State Devices and Materials (SSDM 2018) 

Impact of Oxygen Radical Treatment on Improvement of Al2O3/SiC Interface International conference

T. Doi, W. Takeuchi, M. Sakashita, N. Taoka, O. Nakatsuka, and S. Zaima

2018 International Conference on Solid State Devices and Materials (SSDM 2018) 

Thin Film Growth and Characterization of Group-IV Alloy Semiconductors for Future Nanoelectronic Applications Invited International conference

O. Nakatsuka, M. Kurosawa, and S. Zaima

The 9th International Conference on Physics and Its Applications (ICOPIA) 

Engineering optoelectronic properties of high-Sn-content GeSn, GeSiSn, and SiSn thin films Invited International conference

O. Nakatsuka, M. Kurosawa, M. Fukuda, M. Sakashita, W. Takeuchi, and S. Zaima

IEEE Photonics Society Summer Topical Meeting Series 2018 

Engineering electronic properties of GeSn-related group-IV thin films for nanoelectronic applications Invited International conference

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

European Materials Research Society (2018 E-MRS Spring Meeting) 

GeSn-based thin film thermoelectric generators Invited International conference

M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

International Conference on Processing & Manufacturing of Advanced Materials Processing, Fabrication, Properties, Applications (THERMEC'2018) 

Formation of Ultra-Low Resistance Contact with Nickel Stanogermanide/Heavily Doped n+-Ge1-xSnx Structure International conference

J. Jihee, A. Suzuki, K. Takahashi, O. Nakatsuka, and S. Zaima

1st Joint Conference ICSI / ISTDM 2018 

Ultra-thin GeSn on Insulator structure through the direct bonding technique International conference

T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, M. Kurosawa, Y. Imai, O. Nakatsuka, and N. Uchida

1st Joint Conference ICSI / ISTDM 2018 

Optoelectronic Characterization of Ge1-x-ySixSny/Ge1-xSnx/Ge1-x-ySixSny Double-Heterostructure with High-Si-Content Ge1-x-ySixSny Layer International conference

M. Fukuda, D. Rainko, M. Sakashita, M. Kurosawa, D. Buca, O. Nakatsuka, and S. Zaima

1st Joint Conference ICSI / ISTDM 2018 

Domain size effects on thermoelectric properties of p-type Ge0.95Sn0.05 layers grown on GaAs and Si substrates International conference

Y. Imai, K. Takahashi, N. Uchida, T. Maeda, O. Nakatsuka, S. Zaima, and M. Kurosawa

The 2nd Electron Devices Technology and Manufacturing (EDTM 2018) 

Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator International conference

K. Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, and M. Kurosawa

The 2nd Electron Devices Technology and Manufacturing (EDTM 2018) 

Heavily p-type Doping to Si1-xSnx Layers Grown on SOI Substrates International conference

Y. Inaishi, M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

10th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 11th International Conference on Plasma-Nano Technology and Science (ISPlasma 2018 / IC-PLANTS 2018) 

Growth of Ge1-xSnx Layer by Metal-organic Chemical Vapor Deposition Method using Tetrakis Dimethylamino Tin International conference

Y. Miki, W. Takeuchi, O. Nakatsuka, and S. Zaima

10th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 11th International Conference on Plasma-Nano Technology and Science (ISPlasma 2018 / IC-PLANTS 2018) 

Heterostructure Engineering of GeSn and SiGeSn Group-IV Alloy Semiconductor Layers Invited International conference

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

11th International WorkShop on New Group IV Semiconductor Nanoelectronics 

Low-Temperature Chemical Vapor Deposition of SiC Thin Film Using Vinylsilane for Metal Surface Coating International conference

T. Doi, W. Takeuchi, Y. Jin, H. Kokubun, S. Yasuhara, O. Nakatsuka, and S. Zaima

11th International WorkShop on New Group IV Semiconductor Nanoelectronics 

Crystal growth of GeSn-based materials and its application for thin-film thermoelectric generators Invited International conference

M. Kurosawa, M. Sakashita, O. Nakatsuka, and S. Zaima

The 2017 Global Research Efforts on Energy and Nanomaterials (GREEN 2017) 

Energy Band Structure of Ga-oxide/GaN Interface Formed by Remote O2 Plasma International conference

T. Yamamoto, N. Taoka, A. Ohta, T. X. Nguyen, H. Yamada, T. Takahashi, M. Ikeda, K. Makihara, O. Nakatsuka, M. Shimizu, and S. Miyazaki

2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY (2017 IWDTF) 

Characterization of Defects in Ge1-xSnx Gate Stack Structure International conference

Y. Kaneda, S. Ike, M. Kanematsu, M. Sakashita, W. Takeuchi, O. Nakatsuka, and S. Zaima

2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES: SCIENCE AND TECHNOLOGY (2017 IWDTF) 

Development of GeSn-Related Group-IV Semiconductor Thin Films for Future Si Nanoelectronic Applications Invited International conference

S. Zaima, O. Nakatsuka, M. Kurosawa, W. Takeuchi, and M. Sakashita

the 4th International Symposium on Hybrid Materials and Processing (HyMaP 2017) 

GeSn and related group-IV alloy thin films for future Si nanoelectronics Invited International conference

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita and S. Zaima

The Tenth International Conference on High-Performance Ceramics (CICC-10) 

Crystalline and electrical properties of epitaxial HfGe2/Ge contact for lowering Schottky barrier height International conference

O. Nakatsuka, A. Suzuki, J. McVittie, Y. Nishi, and S. Zaima

Advanced Metallization Conference 2017: 27th Asian Session (ADMETA Plus 2017) 

Growth and Applications of Si1-xSnx Thin Films Invited International conference

M. Kurosawa, O. Nakatsuka, and S. Zaima

The 232th Electrochemical Society Meeting (232nd ECS MEETING) 

Numerical calculation of energy band offset of Si1-xSnx by density functional calculation International conference

Y. Nagae, M. Kurosawa, M. Araidai, O. Nakatsuka, K. Shiraishi, and S. Zaima

The 2nd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-2) 

Heavy n- and p-type doping for polycrystalline Ge1-xSnx layers using pulsed laser annealing in water International conference

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

The 2nd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-2) 

Control of Electrical Property at Metal/Ge Interface with Group-IV Alloy Interlayer International conference

A. Suzuki, O. Nakatsuka, M. Sakashita, and S. Zaima

International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017) 

Characterization of Crystallinity and Energy Band Alignment of Ge1-xSnx/Ge1-x-ySixSny Heterostructure International conference

M. Fukuda, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017) 

Strain measurement of simulated finFET structures of Ge and GeSn prepared by MOCVD International conference

K. Saitoh, S. Ou, S. Ike, O. Nakatsuka and, S. Zaima

International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017) 

Thermal Stability Study of in-situ Sb-Doped n- Ge1-xSnx Epitaxial Layers for Source/Drain Stressor of Strained Ge Transistors International conference

J. Jeon, A. Suzuki, O. Nakatsuka and, S. Zaima

International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017) 

Fabrication and Thermoelectric Mechanism Study of Flexible Si1-xGex Superlattice Films International conference

Y. Peng, L. Miao, C. Li, R. Huang, D. Urushihara, T. Asaka, M. Kurosawa, O. Nakatsuka, and S. Zaima

International Conference on Materials and Systems for Sustainability 2017 (ICMaSS 2017) 

Sb-doping effect on thermal and electrical properties of Ge-rich Ge1-xSnx layers International conference

T. Iwahashi, M. Kurosawa, N. Uchida, Y. Ohishi, T. Maeda, O. Nakatsuka, and S. Zaima

2017 International Conference on Solid State Devices and Materials (SSDM 2017) 

Dopants behavior in polycrystallization of heavily doped Ge1-xSnx layer using pulsed laser annealing in water International conference

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

2017 International Conference on Solid State Devices and Materials (SSDM 2017) 

Synthesis of p- and n-type Ge1-xSnx Thin Films toward New Group-IV Thermoelectric Materials International conference

M. Kurosawa, Y. Imai, T. Iwahashi, A. Ohta, N. Uchida, Y. Ohishi, T. Maeda, O. Nakatsuka, and S. Zaima

36th Annual International Conference on Thermoelectrics (2017 ICT) 

Characterization of energy band structure of Si1-x-ySnxCy ternary alloy layers prepared with solid-phase crystallization International conference

S. Yano, O. Nakatsuka, C. Lim, M. Sakashita, M. Kurosawa, and S. Zaima

29th International Conference on Defects in Semiconductors (ICDS 2017) 

Research and development of GeSn-related thin-film semiconductors for nanoelectronic and optoelectronic applications Invited International conference

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

Frontiers in Materials Processing Applications, Research and Technology (FiMPART 2017) 

Formation of Epitaxial Hf Germanide/Ge Contacts for Schottky Barrier Height Engineering International conference

O. Nakatsuka, A. Suzuki, J. McVittie, Y. Nishi, and S. Zaima

17th International Workshop on Junction Technology 2017 (IWJT 2017) 

Development of GeSn and related semiconductor thin films for next generation optoelectronic applications Invited International conference

O. Nakatsuka, M. Kurosawa, W. Takeuchi, M. Sakashita, and S. Zaima

2017 Global Conference on Polymer and Composite Materials (PCM 2017) 

Alleviation of Fermi level pinning at metal/Ge interface using lattice-matching group-IV ternary alloy interlayer International conference

A. Suzuki, O. Nakatsuka, S. Toda, M. Sakashita, and S. Zaima

The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10) 

Solid phase epitaxy of Si1-xSnx layers on various substrates International conference

M. Kurosawa, M. Kato, K. Takahashi, O. Nakatsuka, and S. Zaima

The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10) 

Epitaxial growth of n+-Ge1-xSnxlayerswith in situ phosphorus doping using low-temperature metal-organic chemical vapor deposition method International conference

S. Ike, W. Takeuchi, O. Nakatsuka, and S. Zaima

The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10) 

Formation of heavily Sb and Ga doped poly-Ge1-xSnx layers on insulator using pulsed laser annealing in water International conference

K. Takahashi, M. Kurosawa, H. Ikenoue, M. Sakashita, O. Nakatsuka, and S. Zaima

The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10) 

Control of lattice constant of Ge1-x-ySixSny layer for energy band engineering in Ge1-xSnx/Ge1-x-ySixSny heterostructure International conference

M. Fukuda, K. Watanabe, M. Sakashita, M. Kurosawa, O. Nakatsuka, and S. Zaima

The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10) 

Formation of SiC and SiCN Films by Chemical Vapor Deposition using Vinylsilane International conference

T. Doi, W. Takeuchi, Y. Jin, H. Kokubun, S. Yasuhara, O. Nakatsuka and S. Zaima

9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 10th International Conference on Plasma-Nano Technology and Science (ISPlasma 2017 / IC-PLANTS 2017) 

Electrical Properties of AlON/4H-SiC MOS Capacitor Prepared by Plasma-Assisted Atomic Layer Deposition International conference

W. Takeuchi, K. Yamamoto, T. Mimura, M. Sakashita, O. Nakatsuka, and , S. Zaima

9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 10th International Conference on Plasma-Nano Technology and Science (ISPlasma 2017 / IC-PLANTS 2017) 

Selective Growth of Ge1-xSnx Epitaxial Layer on Patterned Si Substrate using Metal-organic Chemical Vapor Deposition Method International conference

T. Washizu, S. Ike, W. Takeuchi, O. Nakatsuka, S. Zaima

9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 10th International Conference on Plasma-Nano Technology and Science (ISPlasma 2017 / IC-PLANTS 2017) 

Development of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers for Source/Drain Stressor of Strained GeTransistors International conference

J. Jeon, A. Suzuki, K. Takahashi, O. Nakatsuka, and S. Zaima

Electron Devices Technology and Manufacturing Conference (EDTM 2017) 

Effect of Oxynitridation Annealing for SiO2/SiC Interface on Defects Properties Invited International conference

W. Takeuchi, K. Yamamoto, M. Sakashita, O. Nakatsuka and S. Zaima

10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

Influence of atomic layer deposition temperature of GeO2 layer on electrical properties of Ge and Ge1-xSnx gate stack International conference

Y. Kaneda, M. Kanematsu, M. Sakashita, W. Takeuchi, O. Nakatsuka and S. Zaima

10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

Solid phase crystallization of Ge0.98Sn0.02 layers on various insulating substrates International conference

I. Yoshikawa, M. Kurosawa, W. Takeuchi, M. Sakashita, O. Nakatsuka and S. Zaima

10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

In situ phosphorus doping of Ge and Ge1-xSnx epitaxial layers by low-temperature metal-organic chemical vapor deposition International conference

S. Ike, W. Takeuchi, O. Nakatsuka and S. Zaima

10th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration" 

Growth of Si1-xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates International conference

JSPS Meeting 2016 : Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration" 

Formation of heavily Sb doped poly-Ge1-xSnx layer using pulsed laser annealing in water International conference

JSPS Meeting 2016 : Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration" 

Control of Schottky barrier height of metal/Ge contact using group-IV alloy interlayers International conference

JSPS Meeting 2016 : Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration"