Updated on 2025/04/07

写真a

 
ISHIKAWA, Kenji
 
Organization
Center for Low-temperature Plasma Sciences (cLPS) Professor
Graduate School
Graduate School of Engineering
Title
Professor
External link

Degree 1

  1. Ph. D. ( 2006.3   Tohoku University ) 

Research Interests 1

  1. Plasma science

Research Areas 1

  1. Others / Others  / Plasma nanoscience and nanotechnology

Current Research Project and SDGs 3

  1. Plasma material science

  2. Plasma biology

  3. Plasma processes

Research History 5

  1. Nagoya University   Graduate School of Engineering   Professor

    2023.4

  2. Nagoya University   Center for Low-temperature Plasma Sciences (cLPS)   Professor

    2023.4

  3. Nagoya University   Center for low-temperature plasma sciences, Plasma science division   Professor

    2021.4

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    Country:Japan

  4. Kyushu University   Center of plasma nano interface engineering   Visiting professor

    2021.4

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    Country:Japan

  5. Nagoya University   Center for low-temperature plasma sciences   Designated professor

    2020.2 - 2021.3

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    Country:Japan

Professional Memberships 4

  1. 応用物理学会

  2. プラズマ核融合学会

  3. Society for Free Radical Research JAPAN

  4. American Vacuum Society   Plasma Science and Technology Division

Committee Memberships 3

  1. The Materials Research Society of Japan   Symposium organizer  

    2013   

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    Committee type:Academic society

  2. International conference on plasma nanotechnology and science (IC-PLANTS)   Program committee  

    2010   

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    Committee type:Other

  3. International Symposium on Dry Process   Organizing committee and publication committee  

    2010   

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    Committee type:Academic society

Awards 7

  1. ISPlasma 2016/IC-PLANTS 2016 Excellent Presentation Award

    2016.3   ISPlasma 2016/IC-PLANTS 2016  

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    Country:Japan

  2. 37th JSAP Outstanding Paper Award

    2015.9  

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    Country:Japan

  3. 11th Plasma Electronics Award, Division of Plasma Electronics, The Japan Society of Applied Physics

    2013.3   The Japan Society of Applied Physics  

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    Country:Japan

  4. 第11回アジア太平洋プラズマ科学会議(APCPST&SPSM) Plasma Science Award

    2012.10   APCPST&SPSM  

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    Country:Japan

  5. Symposium award (2008): The 72th Symposium on Semiconductors and Integrated Circuits Technology

    2009   The Electrochemical Society of Japan  

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    Country:Japan

  6. ASET 優秀研究員“SiO2およびポリマーのプラズマエッチング表面反応の研究”

    2003   技術研究組合 超先端電子技術開発機構(ASET)  

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    Country:Japan

  7. 2003 spring MRS best poster award: E3.28 VAPOR TREATMENT OF COPPER SURFACE USING ORGANIC ACIDS

    2003   Material Research Society  

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Papers 365

  1. Valence fragmentation dynamics of a promising low global warming etching gas CF3CHCF2 Reviewed International journal Open Access

    Tran Trung Nguyen, Toshio Hayashi, Hiroshi Iwayama, ane Kenji Ishikawa

    Scientific Reports   Vol. 15 ( 1 ) page: 9507   2025.12

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41598-025-94119-6

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  2. Selective dry etching of TiAlC over TiN using nonhalogen N2/H2 plasma Reviewed Open Access

    Thi-Thuy-Nga Nguyen, Kazunori Shinoda, Shi-Nan Hsiao, Kenji Maeda, Kenetsu Yokogawa, Masaru Izawa, Kenji Ishikawa, and Masaru Hori

    Applied Surface Science   Vol. 691   page: 122665   2025.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.apsusc.2025.162665

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  3. Low-temperature atomic layer etching of platinum via sequential wet-like reactions of plasma oxidation and complexation Reviewed Open Access

    Thi-Thuy-Nga Nguyen, D. Akagi, T. Okato, Kenji Ishikawa, and Masaru Hori

    Applied Surface Science   Vol. 687   page: 162325   2025.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.apsusc.2025.162325

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  4. Hydrofluoroethane plasma etching of SiN, SiO2, and poly-Si films with CHF2CF3, CF3CH3, and CHF2CH3 Reviewed Open Access

    Tran Trung Nguyen, Toshio Hayashi, Hiroshi Iwayama, Makoto Sekine, Masaru Hori, and Kenji Ishikawa

    Applied Surface Science   Vol. 684   page: 161815   2025.3

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    DOI: 10.1016/j.apsusc.2024.161815

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  5. Nanoscale visualization of the anti-tumor effect of a plasma-activated Ringer's lactate solution Reviewed Open Access

    Junichi Usuda, Kenshin Yagyu, Hiromasa Tanaka, Masaru Hori, Kenji Ishikawa, and Yasufumi Takahashi

    Faraday Discussions   Vol. 257 ( 0 ) page: 212 - 223   2025.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/d4fd00116h

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  6. Developments in low-temperature plasma applications in Asia Reviewed International coauthorship

    Pankaj Attri, Kenji Ishikawa, Nozomi Takeuchi, Tomohiro Nozaki, Rajdeep Singh Rawat, Zhitong Chen, Bo Ouyang, Takamasa Okumura, Danni Fu, Katsuyuki Takahashi, Dae-Yeong Kim, Xiaozhong Chen, Kunihiro Kamataki, Koichi Takaki, Eun Ha Choi, Masaru Hori, Kazunori Koga, and Masaharu Shiratani

    Reviews of Modern Plasma Physics   Vol. 9 ( 1 ) page: 6   2025.2

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    DOI: 10.1007/s41614-025-00184-9

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  7. Achieving the in-plane orientation of carbon nanowalls: Implications for sensing, energy harvesting, and nano-bio devices Reviewed Open Access

    Shintaro Iba, Hiroki Kondo, Takayoshi Tsutsumi, Kenji Ishikawa, Mineo Hiramatsu, and Masaru Hori

    ACS Applied Nano Materials   Vol. 8 ( 6 ) page: 2660 - 2668   2025.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsanm.4c01771

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  8. Plasma-enhanced atomic layer deposition of carbon films employing a cyclic process of N2/H2 plasma and α, α'-dichloro-p-xylene as a precursor Reviewed Open Access

    Liugang Hu, Takayoshi Tsutsumi, Nobuyoshi Kobayashi, Kenji Ishikawa, and Masaru Hori

    Applied Surface Science   Vol. 681   page: 161485   2025.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.apsusc.2024.161485

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  9. Rate-controlled cycle etching of GaN by cycle exposure to BCl3 and F2-added Ar plasma at a substrate temperature of 400 °C Reviewed

    Shohei Nakamura, Atsushi Tanide, Soichi Nadahara, Kenji Ishikawa, and Masaru Hori

    Journal of Vacuum Science and Technology B   Vol. 43 ( 2 ) page: 022202   2025.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1116/5.0239755

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  10. Analysis of the synergetic effect of process parameters of hydrogenated amorphous carbon deposition in plasma-enhanced chemical vapor deposition using machine learning Reviewed Open Access

    Yusuke Ando, Hiroki Kondo, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    Diamond and Related Materials   Vol. 151   page: 111687   2025.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.diamond.2024.111687

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  11. Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition (vol 14, 10861, 2024) Reviewed Open Access

    Arun Kumar Dhasiyan, Frank Wilson Amalraj, Swathy Jayaprasad, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, and Masaru Hori

    Scientific Reports   Vol. 14 ( 1 ) page: 30575   2024.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41598-024-82619-w

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  12. Pseudo-wet plasma mechanism enabling high-throughput dry etching of SiO2 by cryogenic-assisted surface reactions Reviewed Open Access

    Shih-Nan Hsiao, Makoto Sekine, Nikolay Britun, Micheal Kin Ting Mo, Yusuke Imai, Takayoshi Tsutsumi, Kenji Ishikawa, Yuki Iijima, Ryutaro Suda, Masahiko Yokoi, Yoshihide Kihara, and Masaru Hori

    Small method   Vol. 8 ( 12 ) page: 2400090   2024.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/smtd.202400090

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  13. Low-temperature plasma as a strategy to achieve SDGs Reviewed

    Hiromasa Tanaka, Kenji Ishikawa, and Shinya Toyokuni

    Free Radical Research   Vol. 58 ( 19 ) page: 594 - 595   2024.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1080/10715762.2023.2297343

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  14. Selective removal of single-layer graphene over double-layer graphene on SiO2 by remote oxygen plasma irradiation Reviewed Open Access

    Liugang Hu, Kenji Ishikawa, Thi-Thuy-Nga Nguyen, Shih-Nan Hsiao, and Masaru Hori

    Applied Surface Science   Vol. 669   page: 160598   2024.10

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    DOI: 10.1016/j.apsusc.2024.160598

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  15. High-speed removal process for organic polymers by non-thermal atmospheric pressure spark discharge at room temperature and its mechanism Reviewed Open Access

    Yoshihiro Sakamoto, Takayoshi Tsutsumi, Hiromasa Tanaka, Kenji Ishikawa, Hiroshi Hashizume, and Masaru Hori

    Coating   Vol. 14 ( 10 ) page: 1339   2024.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/coatings14101339

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  16. Non-halogen dry etching of metal carbide TiAlC by low-pressure N2/H2 plasma at room temperature Reviewed Open Access

    Thi-Thuy-Nga Nguyen, Kazunori Shinoda, Shih-Nan Hsiao, Kenji Maeda, Kenetsu Yokogawa, Masaru Izawa, Kenji Ishikawa, and Masaru Hori

    ACS Applied Materials and Interfaces   Vol. 16 ( 39 ) page: 53195 - 53206   2024.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsami.4c11025

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  17. Science and applications of plasma activated solutions: Current trends and future directions Reviewed

    Hiromasa Tanaka, Masaaki Mizuno, Kenji Ishikawa, Camelia Miron, Yasumasa Okazaki, Shinya Toyokuni, Kae Nakamura, Hiroaki Kajiyama, Masafumi Ito, and Masaru Hori

    Plasma Medicine   Vol. 14 ( 1 ) page: 67 - 76   2024.9

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    DOI: 10.1615/PlasmaMed.v14.i1.50

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  18. Dry Process 2023 Open Access

    Koga K., Takeda K., Toyoda H., Ishikawa K., Ichiki T., Nunomura S., Kurihara K., Kuboi N., Ohta T., Takenaka K.

      Vol. 63 ( 8 )   2024.8

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers  

    DOI: 10.35848/1347-4065/ad5d78

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  19. Effects of plasma ions/radicals on kinetic interactions in nanowall deposition: A review Invited Reviewed

    Kenji Ishikawa

    Advanced Engineering Materials   Vol. 26 ( 16 ) page: 2400679   2024.8

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    Authorship:Lead author, Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/adem.202400679

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  20. Future of plasma etching for microelectronics: Challenges and opportunities Reviewed International coauthorship Open Access

    Gottlieb Oehrlein, Stephan Brandstadter, Robert Bruce, Jane Chang, Jessica DeMott, Vincent M. Donnelly, Remi Dussart, Andreas Fischer, Richard Gottscho, Satoshi Hamaguchi, Masanobu Honda, Masaru Hori, Kenji Ishikawa, Steven Jaloviar, Keren Kanarik, Kazuhiro Karahashi, Akiteru Ko, Hiten Kothari, Nobuyuki Kuboi, Mark Kushner, Thorsten Lill, Pingshan Luan, Ali Mesbah, Eric Miller, Shoubhanik Nath, Yoshinobu Ohya, Mitsuhiro Omura, Chanhoon Park, John Polouse, Shahid Rauf, Makoto Sekine, Taylor Smith, Nathan Stafford, Theo Standaert, and Peter Ventzek

    Journal of Vacuum Science and Technology B   Vol. 42 ( 4 ) page: 041501   2024.7

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    DOI: 10.1116/6.0003579

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  21. Low-temperature growth at 225 °C and characterization of carbon nanowalls synthesized by radical injection plasma-enhanced chemical vapor deposition Reviewed Open Access

    Ngo Quang Minh, Ngo Van Nong, Osamu Oda, Kenji Ishikawa, and Masaru Hori

    Vacuum   Vol. 224   page: 113180   2024.6

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    DOI: 10.1016/j.vacuum.2024.113180

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  22. Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition Reviewed Open Access

    Arun Kumar Dhasiyan, Frank Wilson Amalraj, Swathy Jayaprasad, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, and Masaru Hori

    Scientific Reports   Vol. 14 ( 1 ) page: 10861   2024.5

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    DOI: 10.1038/s41598-024-61501-9

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  23. In situ atom-resolved observation of Si (111) 7×7 surface with F radical and Ar ion irradiation simulated atomic layer etching Reviewed Open Access

    Takayoshi Tsutsumi, Atsuki Asano, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    Journal of the Vacuum Science and Technologies A   Vol. 42 ( 3 ) page: 032603   2024.5

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    DOI: 10.1116/6.0003432

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  24. Nitrogen admixture effects on growth characteristics and properties of carbon nanowalls Reviewed Open Access

    Peter Raj Dennis Christy, Ngo Van Nong, Nikolay Britun, Ngo Quang Minh, Thi-Thuy-Nga Nguyen, Hiroki Kondo, Osamu Oda, Kenji Ishikawa and Masaru Hori

    Thin Solid Films   Vol. 795   page: 140322   2024.4

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    DOI: 10.1016/j.tsf.2024.140322

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  25. Dissociative properties of C4F6 obtained using computational chemistry Reviewed Open Access

    Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    Japanese Journal of Applied Physics   Vol. 63 ( 4 ) page: 04SP26   2024.4

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    DOI: 10.35848/1347-4065/ad3166

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  26. Inhibition of glutamine metabolism increases sensitivity to plasma-activated medium-induced cytotoxicity Reviewed

    Shu Tanaka, Sae Hayashi, Tomohiro Otsuka, Tetsuro Kamiya, Kenji Ishikawa, and Hirokazu Hara

    Free Radical Research   Vol. 58 ( 3 ) page: 170 - 179   2024.3

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    DOI: 10.1080/10715762.2024.2332343

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  27. Plasma-driven sciences: Exploring complex interactions at plasma-boundaries Reviewed Open Access

    Kenji Ishikawa, Kazunori Koga, and Noriyasu Ohno

    Plasma   Vol. 7 ( 1 ) page: 160 - 177   2024.2

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/plasma7010011

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  28. High-speed Synthesis and Functionalization of Nanographene by In-liquid Plasma Reviewed Open Access

    KONDO Hiroki, TSUTSUMI Takayoshi, ISHIKAWA Kenji, HORI Masaru, HIRAMATSU Mineo

    Vacuum and Surface Science   Vol. 67 ( 2 ) page: 77 - 82   2024.2

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    Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:The Japan Society of Vacuum and Surface Science  

    <p>A novel synthesis method of nanographene materials by using in-liquid plasma has been developed. By this method, the high synthesis rate of nanographene up to 1 mg/min. can be realized. There is a trade-off relationship between synthesis rate and crystallographic domain size with respect to the number of carbon atoms in the raw alcohol molecules. For example, when using 1-butanol (C<sub>4</sub>H<sub>9</sub>OH), the synthesis rate is approximately twice as high as when using ethanol (C<sub>2</sub>H<sub>5</sub>OH), but the domain size, which indicates crystallographic quality, is about half smaller. On the other hand, when using hexane (C<sub>6</sub>H<sub>14</sub>) or benzene (C<sub>6</sub>H<sub>6</sub>), the synthesis rate is approximately 17 times and 1.7 times faster than when using hexanol (C<sub>6</sub>H<sub>13</sub>OH), respectively, but their domain size is much smaller compared with that by ethanol. This indicates an effect of OH radicals on the domain size improvement. By adding iron (II) phthalocyanine, <i>etc.</i> to the alcohol raw material, nitrogen-doped nanographene materials were successfully synthesized and confirmed their catalytic activity. The mechanism of expression of catalytic activity was also clarified.</p>

    DOI: 10.1380/vss.67.77

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  29. Elaborate Cooperation of Poly(rC)-binding Proteins 1/2 and Glutathione in Ferroptosis Induced by Plasma-activated Ringer' s Lactate Reviewed Open Access

    Li Jiang, Hao Zheng, Moe Ishida, Qinying Lyu, Shinya Akatsuka, Yashiro Motooka, Kotaro Sato, Yoshitaka Sekido, Kae Nakamura, Hiromasa Tanaka, Kenji Ishikawa, Hiroaki Kajiyama, Masaaki Mizuno, Masaru Hori, and Shinya Toyokuni

    Free Radical Biology and Medicine   Vol. 214   page: 28 - 41   2024.2

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    DOI: 10.1016/j.freeradbiomed.2024.02.001

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  30. Surface sulfurization of amorphous carbon films in the chemistry of oxygen plasma added with SO2 or OCS for high-aspect-ratio etching Reviewed Open Access

    Kenji Ishikawa, Thi-Thuy-Nga Nguyen, Yuta Aoki, Hiroyasu Sato, Junichi Kawakami, Shuji Tsuno, Shin-Nan Hsiao, and Masaru Hori

    Applied Surface Science   Vol. 645   page: 158876   2024.2

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    DOI: 10.1016/j.apsusc.2023.158876

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  31. Oxygen radical irradiation transforms an organic fertilizer l-tryptophan into an environment and human-friendly bactericide Reviewed Open Access

    Naoyuki Iwata, Kenji Ishikawa, Yasuhiro Nishikawa, Hiroyuki Kato, Motoyuki Shimizu, Masashi Kato, Hiromasa Tanaka, Masafumi Ito, and Masaru Hori

    Environmental Technology and Innovation   Vol. 33   page: 103496   2024.2

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.eti.2023.103496

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  32. High linear energy transfer (LET) nature of alanine radical yield by soft X-ray irradiations studied by electron spin resonance (ESR) applications Reviewed

    Seiko Nakagawa, Akinari Yokoya, Maki Ohara, Noriko Usami, Mizue Asada, Motoyasu Fujiwara, Toshikazu Nakamura, and Kenji Ishikawa

    Radiation Physics and Chemistry   Vol. 214   page: 111304   2024.1

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    DOI: 10.1016/j.radphyschem.2023.111304

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  33. Cold Atmospheric Pressure Plasma-Activated Liquids for Cancer Treatment Reviewed

    Miron C., Hiromasa T., Britun N., Hashizume H., Ishikawa K., Du L., Yamakawa T., Kurebayashi Y., Kondo T., Kondo H., Kajiyama H., Toyokuni S., Mizuno M., Hori M.

    IFMBE Proceedings   Vol. 111 IFMBE   page: 150 - 162   2024

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    Low-temperature plasma (LTP) is a promising tool that can assist in cancer treatment. Plasma-treated liquids have shown a selective cytotoxic effect on cancer cells attributed to reactive species formed in discharge, but this mechanism is not completely understood. In this study, the chemical compounds formed by plasma irradiation of Ringer’s lactate solutions and their effects on non-tumorigenic breast epithelial cells (MCF-10A) and breast cancer cells (MCF-7) were investigated. Among these compounds, glyceric acid increased the cell viability by more than two-fold compared to the control samples for MCF-10A and MCF-7 cells, whereas the tricarballylic acid had a pronounced cytotoxic effect on the cells when incubated with solutions of 0.6 mM to 50 mM concentrations. A good selectivity in killing the cancer cells was observed when the chemical compounds identified in plasma-treated liquids (such as ethyl acetate, glyceric acid, and tricarballylic acid) were used in a mixture solution of a certain concentration. The results show that the LTP-generated chemical compounds have both, stimulatory and inhibitory effects on cell viability, and the best selectivity is achieved only when these compounds are combined in a certain amount and have a synergistic effect, completely killing only the cancer cells.

    DOI: 10.1007/978-3-031-62523-7_17

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  34. Bias-supply timing tailored to the aspect ratio dependence of silicon trench etching in Ar plasma with alternately injected C4F8 and SF6 Reviewed Open Access

    Taito Yoshie, Kenji Ishikawa, Thi-Thuy-Nga Nguyen, Shih-Nan Hsiao, Takayoshi Tsutsumi, Makoto Sekine, and Masaru Hori

    Applied Surface Science   Vol. 638   page: 157981   2023.11

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    DOI: 10.1016/j.apsusc.2023.157981

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  35. An approach to reduce surface charging with cryogenic plasma etching using hydrogen-fluoride contained gases Reviewed

    Shih-Nan Hsiao, Makoto Sekine, Kenji Ishikawa, Yuki Iijima, Yoshinobu Ohya, and Masaru Hori

    Applied Physics Letters   Vol. 123 ( 21 ) page: 1 - 4   2023.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0173553

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  36. Gas-phase study of the behavior of trimethyl gallium and triethyl gallium by optical emission spectroscopy and quadrupole mass spectroscopy for the growth of GaN by REMOCVD (radical-enhanced metalorganic chemical vapor deposition) Reviewed

    Arun Kumar Dhasiyan, Swathy Jayaprasad, Frank Wilson Amalraj, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, and Masaru Hori

    Japanese Journal of Applied Physics   Vol. 62 ( SN ) page: SN1019   2023.11

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    DOI: 10.35848/1347-4065/acfd34

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  37. Deposition of carbon-based materials directly on copper foil and nickel foam as 2D-and 3D-networked metal substrates by in-liquid plasma Reviewed Open Access

    Ma. Shanlene D.C. Dela Vega, Thi-Thuy-Nga Nguyen, Hiroki Kondo, Takayoshi Tsutsumi, Kenji Ishikawa, and Masaru Hori

    Plasma Processes and Polymers   Vol. 20 ( 11 ) page: 1 - 5   2023.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/ppap.202300036

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  38. The Possibility of Cancer Therapy with a Combination of Low-temperature Plasma and Hyperthermia Invited Reviewed

    KONDO TAKASHI, HASHIZUME HIROSHI, TANAKA HIROMASA, ISHIKAWA KENJI, SAITOH JUN-ICHI, HORI MASARU

    Thermal Medicine   Vol. 39 ( 3 ) page: 21 - 30   2023.9

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    Language:Japanese   Publishing type:Research paper (scientific journal)   Publisher:Japanese Society for Thermal Medicine  

    <p>Low temperature plasma (LTP) has been proposed as a novel therapeutic method for its anti-cancer potential. However, its biological effects in combination with other physical modalities remain to be elusive. Therefore, this study was aimed to determine the effects of low temperature helium plasma (He-LTP) in combination with mild hyperthermia (HT, 42℃ for 20 min). Human lymphoma U937 cells were exposed to HT, immediately after He-LTP treatment. He-LTP in combination with HT showed enhanced cell death, which was accompanied by increased intracellular reactive oxygen species (ROS) production. These findings suggest that He-LTP can enhance the apoptotic effects of mild HT due to the increased in intracellular ROS generation as He-LTP has been known to caused marked induction of ROS in the aqueous medium. These findings would be helpful when establishing a therapeutic strategy for LTP in combination with mild HT. Here, the biological effects of LTP, and the combination with hyperthermia and LTP or LTP -activated solutions for cancer therapy have been summarized in this review.</p>

    DOI: 10.3191/thermalmed.39.21

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  39. Development of an experimental system for cell viability assays of yeasts using gas-temperature controllable plasma jets Reviewed Open Access

    Yoshimura, S; Otsubo, Y; Yamashita, A; Johzuka, K; Tsutsumi, T; Ishikawa, K; Hori, M

    Japanese Journal of Applied Physics   Vol. 62 ( SL )   2023.9

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    The characteristics of a gas-temperature-controllable atmospheric-pressure helium plasma jet and the development of an experimental system for cell viability assays of yeasts (fission yeast Schizosaccharomyces pombe and budding yeast Saccharomyces cerevisiae) are reported. The physicochemical properties of the plasma plume, which can maintain the temperature of the irradiated object at a temperature suitable for yeast, were not significantly different from those of a typical helium plasma jet. Furthermore, good reproducibility of cell viability was observed when gas temperature, gas flow rate, applied high voltage, and irradiation distance remained fixed, and only irradiation time was used as a parameter. This experimental system allows us to carry out various experiments, such as the search for plasma-resistant mutants that will contribute to the identification of genes involved in resistance to direct plasma irradiation.

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  40. Organic decomposition and synthesis reactions in lactated solution exposed to nonequilibrium atmospheric pressure plasma Reviewed

    Liu, Y; Ishikawa, K; Tanaka, H; Miron, C; Kondo, T; Nakamura, K; Mizuno, M; Kajiyama, H; Toyokuni, S; Hori, M

    PLASMA PROCESSES AND POLYMERS   Vol. 20 ( 5 )   2023.5

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    Lactate is used in the food and pharmaceutical industries and is a crucial intermediate for synthesis. Plasma-activated lactate (PAL) in Ringer's solution was recently shown to have effective antitumor action. Small molecule aldehydes, ketones, and organic acids were produced from lactate during plasma exposure, and five-membered conjugated lactone isomers of furanone (C5H6O2) were detected formed by interactions of lactate or its fragments with •OH, organic radicals, and H2O2. 2,3-Dimethyl-tartaric acid may be the effective component in PAL for the selective killing of cancer but not normal cells and possible pathways for its synthesis are provided. Aqueous reaction mechanisms are explained, including dehydration, esterification, hydrolysis, and dimerization. This study will help develop novel cancer therapies and further plasma organic chemistry.

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  41. Leukocyte Depletion and Size-Based Enrichment of Circulating Tumor Cells Using a Pressure-Sensing Microfiltration Device Reviewed Open Access

    Onoshima, D; Hase, T; Kihara, N; Kuboyama, D; Tanaka, H; Ozawa, N; Yukawa, H; Sato, M; Ishikawa, K; Hasegawa, Y; Ishii, M; Hori, M; Baba, Y

    ACS MEASUREMENT SCIENCE AU   Vol. 3 ( 2 ) page: 113 - 119   2023.4

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    Considering the challenges in isolating circulating tumor cells (CTCs) pertaining to cellular stress and purity, we report the application of a blood microfiltration device as an optimal approach for noninvasive liquid biopsy to target CTCs. We experimentally analyzed the filtration behavior of the microfilter using pressure sensing to separate tumor cells from leukocytes in whole blood. This approach achieved an average recovery of >96% of the spiked tumor cells and depletion of >99% of total leukocytes. Furthermore, we carried out genomic profiling of the CTCs using the blood microfiltration device. The method was also applied in a clinical setting; DNA amplification was performed using a small number of microfiltered CTCs and epidermal growth factor receptor mutations were successfully detected to characterize the efficacy of molecularly targeted drugs against lung cancer. Overall, the proposed method can provide a tool for evaluating efficient filtration pressure to concentrate CTCs from whole blood.

    DOI: 10.1021/acsmeasuresciau.2c00057

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  42. Manipulation of etch selectivity of silicon nitride over silicon dioxide to a-carbon by controlling substate temperature with a CF4/H2 plasma Reviewed

    Hsiao, SN; Britun, N; Nguyen, TTN; Tsutsumi, T; Ishikawa, K; Sekine, M; Hori, M

    VACUUM   Vol. 210   page: 111863 - 111863   2023.4

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    The effects of substrate temperature (Ts) on the etch rate (ER) of the PECVD-prepared SiN, SiO2 and amorphous carbon (a-C) films, and their selectivity were investigated with a CF4/H2 plasma. The ERs for the SiN at all Ts were higher than that for the SiO2 films. As Ts was decreased from 50 to −20 °C, the ER for the SiN decreased. Contrarily, the ER of the SiO2 films increased. The etching selectivity of SiN over SiO2 reached to near unity when the Ts was −20 °C. At the same time, the ER of for the a-C films was found to be around 0.1 nm/s and irrespective of Ts. The fluorocarbon (FC) thickness was greater for the SiO2 films than that of the SiN. The lower ER for the SiO2 was therefore attributed to the thicker FC layer and resultant etching mechanism. As the Ts was decreased, the FC thickness on the SiO2 films decreased, which led to the ER decrease. The decrease of ER for the SiN etching at the low temperature was likely due to the higher stability of the surface N–H modification layer, compared with that processed at 20 °C, which was confirmed by the in situ FTIR.

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  43. High-performance glass filters for capturing and culturing circulating tumor cells and cancer-associated fibroblasts Reviewed Open Access

    Tanaka, H; Iwata, D; Shibata, Y; Hase, T; Onoshima, D; Yogo, N; Shibata, H; Sato, M; Ishikawa, K; Nagasawa, I; Hasegawa, Y; Ishii, M; Baba, Y; Hori, M

    SCIENTIFIC REPORTS   Vol. 13 ( 1 ) page: 4130   2023.3

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    Various liquid biopsy methods have been developed for the non-invasive and early detection of diseases. In particular, the detection of circulating tumor cells (CTCs) and cancer-associated fibroblasts (CAFs) in blood has been receiving a great deal of attention. We have been developing systems and materials to facilitate such liquid biopsies. In this study, we further developed glass filters (with various patterns of holes, pitches, and non-adhesive coating) that can capture CTCs, but not white blood cells. We optimized the glass filters to capture CTCs, and demonstrated that they could be used to detect CTCs from lung cancer patients. We also used the optimized glass filters for detecting CAFs. Additionally, we further developed a system for visualizing the captured cells on the glass filters. Finally, we demonstrated that we could directly culture the captured cells on the glass filters. Based on these results, our high-performance glass filters appear to be useful for capturing and culturing CTCs and CAFs for further examinations.

    DOI: 10.1038/s41598-023-31265-9

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  44. Generation and measurement of low-temperature plasma for cancer therapy: a historical review Reviewed Open Access

    Ishikawa, K; Takeda, K; Yoshimura, S; Kondo, T; Tanaka, H; Toyokuni, S; Nakamura, K; Kajiyama, H; Mizuno, M; Hori, M

    FREE RADICAL RESEARCH   Vol. 57 ( 3 ) page: 239 - 270   2023.3

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    This review provides a description of the historical background of the development of biological applications of low-temperature plasmas. The generation of plasma, methods and devices, plasma sources, and measurements of plasma properties, such as electron dynamics and chemical species generation in both gaseous and aqueous phases, were assessed. Currently, direct irradiation methods for plasma discharges contacting biological surfaces, such as the skin and teeth, are related to plasma biological interactions. Indirect methods using plasma-treated liquids are based on plasma–liquid interactions. The use of these two methods is rapidly increasing in preclinical studies and cancer therapy. The authors address the prospects for further developments in cancer therapeutic applications by understanding the interactions between the plasma and living organisms.

    DOI: 10.1080/10715762.2023.2230351

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  45. Efficacy of periodic cold plasma treatment in a paddy to produce white-core grains in brewer's rice cultivar Yamadanishiki Reviewed

    Hashizume, H; Kitano, H; Mizuno, H; Abe, A; Yuasa, G; Tohno, S; Tanaka, H; Ishikawa, K; Matsumoto, S; Sakakibara, H; Hirosue, Y; Maeshima, M; Mizuno, M; Hori, M

    FREE RADICAL RESEARCH   Vol. 57 ( 3 ) page: 161 - 173   2023.3

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    We investigated the effect of cold plasma application on the yield and grain quality of rice (Oryza sativa L.), focusing on the brewer’s rice cultivar, Yamadanishiki. Two treatment methods were examined in a paddy; direct plasma irradiation of seedlings and indirect treatment with plasma-activated Ringer’s lactate solution (PAL) during the vegetative growth phase. Periodic direct irradiation for 30 s increased whole plant weight and grain yield. Treatment with PAL promoted some growth of panicles relatively and partially suppressed the growth of culms and leaves. Both treatments affected the grain quality; an increase of the ratio of white-core grains to total number of grains, which is suited for producing Japanese sake rice, as well as a decrease of the ratio of immature grains. The results showed that the effective production of rice grains for sake production can be improved by the application of cold plasma treatment of rice seedlings in a paddy.Highlight Rice plants of brewer’s rice cultivar in a paddy were treated with cold plasma, by the direct irradiation of plants and the immersed of plants in plasma-activated Ringer’s lactate (PAL). Direct plasma irradiation promoted plant weight, grain ripening, and increased yield. PAL treatment affected the growth of main stem and promoted the growth of panicles relatively. Both treatments improved the producing white-core grains, in addition to promotion of grain ripening. Cold plasma treatment can be applied to produce stable and high-quality food in various agriculture and food industries, which can achieve the sustainable developmental goals (SDGs).

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  46. Cancer-specific cytotoxicity of Ringer's acetate solution irradiated by cold atmospheric pressure plasma Reviewed

    Miron, C; Ishikawa, K; Kashiwagura, S; Suda, Y; Tanaka, H; Nakamura, K; Kajiyama, H; Toyokuni, S; Mizuno, M; Hori, M

    FREE RADICAL RESEARCH   Vol. 57 ( 2 ) page: 91 - 104   2023.2

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    Cold atmospheric pressure plasmas are promising medical tools that can assist in cancer treatment. While the medical pathology mechanism is substantially understood, knowledge of the contribution of reactive species formed in plasma and the mode of activation of biochemical pathways is insufficient. Herein, we present a concept involving antitumoral plasma-activated organics, which is envisaged to increase cytotoxicity levels against cancer cells. Ringer′s acetate solution was irradiated by low-temperature plasma at atmospheric pressure and possible reaction pathways of the compound generation are presented. The chemical compounds formed by plasma treatment and their effects on non-tumorigenic breast epithelial cells (MCF-10A) and breast cancer cells (MCF-7) were investigated. The cell viability results have shown that plasma-derived compounds have both, stimulatory and inhibitory effects on cell viability, depending on the concentration of the generated compounds in the irradiated liquids. Previous studies have shown that oxidative stresses involving reactive oxygen and nitrogen species (RONS) can be used to kill cancer cells. Hence, while RONS offers promising first-step killing effects, cell viability results have shown that plasma-derived compounds, such as acetic anhydride and ethyl acetate, have the potential to play important roles in plasma-based cancer therapy.

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  47. Plasma-Assisted Priming: Improved Germination and Seedling Performance of Papaya Reviewed Open Access

    Xi, DK; Yap, SL; Kumar, NN; Toh, CC; Ishikawa, K; Hori, M

    SAINS MALAYSIANA   Vol. 52 ( 2 ) page: 599 - 611   2023.2

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    Papaya is a one of the important tropical fruit crops with a global export of 353 ktonnne reported in 2020. The germination of papaya seed is erratic and often non-uniform. Plasma assisted priming of seed was performed at atmospheric pressure in a parallel plate dielectric barrier discharge system. The germination rate of papaya seeds and the growth performance of the seedling were monitored for several treatment plans combining the atmospheric pressure plasma treatment with soaking of seed in deionized water. An enhanced germination rate of 92% was obtained by the plasma assisted priming, compared to the untreated of 60%. The plasma assisted priming performed by plasma treatment and soaking in an opposite sequence showed different requirement and possibly involved different mechanisms. The treatment time was reduced to only 4 minutes for pre-soaked seeds, otherwise the germination rate increased with the plasma treatment time from 3 to 30 min treatment. The plasma assisted priming approaches were also found enhancing seedling growth performance. The treated seedling grows about two times bigger and the dried mass measured after 30 days was more than 100% compared to that of the untreated and hot water treated seeds.

    DOI: 10.17576/jsm-2023-5202-21

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  48. Cooperation of Poly(rC)-binding Proteins 1/2 and Glutathione in Ferroptosis Induced by Plasma-activated Ringer's Lactate Reviewed

    Zheng, H; Jiang, L; Lyu, QY; Akatsuka, S; Motooka, Y; Sekido, Y; Nakamura, K; Tanaka, H; Ishikawa, K; Kajiyama, H; Mizuno, M; Hori, M; Toyokuni, S

    CANCER SCIENCE   Vol. 114   page: 749 - 749   2023.2

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  49. Cooperation of Poly(rC)-binding Proteins 1/2 and Glutathione in Ferroptosis Induced by Plasmaactivated Ringer's Lactate Reviewed

    Zheng, H; Jiang, L; Lyu, QY; Akatsuka, S; Motooka, Y; Sekido, Y; Nakamura, K; Tanaka, H; Ishikawa, K; Kajiyama, H; Mizuno, M; Hori, M; Toyokuni, S

    CANCER SCIENCE   Vol. 114   page: 1340 - 1340   2023.2

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  50. GaN damage-free cyclic etching by sequential exposure to Cl<sub>2</sub> plasma and Ar plasma with low Ar<SUP>+</SUP>-ion energy at substrate temperature of 400 °C Reviewed

    Nakamura, S; Tanide, A; Kimura, T; Nadahara, S; Ishikawa, K; Oda, O; Hori, M

    JOURNAL OF APPLIED PHYSICS   Vol. 133 ( 4 )   2023.1

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    Damage-free atomic layer etching (ALE) of GaN was demonstrated using a cyclic process in which the chlorinated layer formed by Cl2 plasma exposure was removed by exposure to Ar plasma with energy-controlled ions when the substrate temperature was maintained at 400 °C. The layer chlorinated at 400 °C by Cl2 plasma exposure was found to be thinner than that chlorinated at 25 °C. Therefore, in the case of an Ar+-ion energy of 70 eV, the "ALE synergy"parameter, which quantifies the degree to which a process approaches the ideal ALE regime, decreased from 86% at a substrate temperature of 25 °C to 24% at a substrate temperature of 400 °C. A substrate temperature of 400 °C promoted etching even at the lower ion energy of 40 eV, thereby resulting in a higher ALE synergy of 62%. The vertical etching profile with no degradation of photoluminescence near the band edge on the etched surface was then observed. The proposed high-temperature ALE method is promising for realizing a vertical pattern profile via damage-free etching of GaN.

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  51. Mechanical properties of maze-like carbon nanowalls synthesized by the radial injection plasma enhanced chemical vapor deposition method Reviewed Open Access

    Ghodke, S; Murashima, M; Christy, D; Van Nong, N; Ishikawa, K; Oda, O; Umehara, N; Hori, M

    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING   Vol. 862   2023.1

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    The unique structural properties of vertically aligned graphene sheets or Carbon Nanowalls (CNWs) have attracted great interests for their potential for various applications in microelectronic devices, energy storage, and catalyst support materials. During the handling or operation of the devices, tension and/or pressure are often needed. Under such conditions, CNWs must undergo compression and stress. Therefore, the deformation mechanism and evolution behavior of the CNW structures under load play a critical role in the performance and reliability of the devices. In this study, the mechanical properties of a typical maze-like CNW structure synthesized by a Radial Injection Plasma Enhanced Chemical Vapor Deposition (RI-PECVD) technique were analyzed by employing the nanoindentation method. The measured compressive strength of the CNW structure was 50 MPa with an average modulus E value of ∼28 GPa, which is significantly higher than that of pyrolytic graphite and other graphene-based materials such as 3D graphene-derived carbon, commercial graphene, and reduced graphene oxide films. An elastoplastic behavior of a soft material was observed in high-resolution microscopy and a mechanism of deformation for CNWs is elucidated.

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  52. Effects of plasma-activated Ringer's lactate solution on cancer cells: evaluation of genotoxicity Reviewed Open Access

    Liu, Y; Nakatsu, Y; Tanaka, H; Koga, K; Ishikawa, K; Shiratani, M; Hori, M

    GENES AND ENVIRONMENT   Vol. 45 ( 1 ) page: 3   2023.1

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    Background: Non-thermal atmospheric pressure plasma technologies form the core of many scientific advances, including in the electronic, industrial, and biotechnological fields. The use of plasma as a cancer therapy has recently attracted significant attention due to its cancer cell killing activity. Plasma-activated Ringer’s lactate solution (PAL) exhibits such activity. In addition to ROS, PAL contains active compounds or species that cause cancer cell death, but the potential mutagenic risks of PAL have not been studied. Results: PAL has a low pH value and a high concentration of H2O2. H2O2 was removed from PAL using catalase and catalase-treated PAL with a pH of 5.9 retained a killing effect on HeLa cells whereas this effect was not observed if the PAL was adjusted to pH 7.2. Catalase-treated PAL at pH 5.9 had no significant effect on mutation frequency, the expression of γH2AX, or G2 arrest in HeLa cells. Conclusion: PAL contains one or more active compounds or species in addition to H2O2 that have a killing effect on HeLa cells. The compound(s) is active at lower pH conditions and apparently exhibits no genotoxicity. This study suggested that identification of the active compound(s) in PAL could lead to the development of novel anticancer drugs for future cancer therapy.

    DOI: 10.1186/s41021-023-00260-x

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  53. Editorial: Prospects of plasma generated species interaction with organic and inorganic materials Reviewed Open Access

    Attri, P; Koga, K; Kurita, H; Ishikawa, K; Shiratani, M

    FRONTIERS IN PHYSICS   Vol. 10   2023.1

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    DOI: 10.3389/fphy.2022.1118018

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  54. Plasma activated Ringer's lactate solution Reviewed

    Tanaka, H; Mizuno, M; Ishikawa, K; Miron, C; Okazaki, Y; Toyokuni, S; Nakamura, K; Kajiyama, H; Hori, M

    FREE RADICAL RESEARCH   Vol. 57 ( 1 ) page: 14 - 20   2023.1

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    Low-temperature plasma (LTP) has been widely used in life science. Plasma-activated solutions were defined as solutions irradiated with LTP, and water, medium, and Ringer’s solutions have been irradiated with LTP to produce plasma-activated solutions. They contain chemical compounds produced by reactions among LTP, air, and solutions. Reactive oxygen and nitrogen species (RONS) are major components in plasma-activated solutions and recent studies revealed that plasma-activated organic compounds are produced in plasma-activated Ringer’s lactate solution (PAL). Many in vitro and in vivo studies demonstrated that PAL exhibits anti-tumor effects on cancers, and biochemical analyses revealed intracellular molecular mechanisms of cancer cell death by PAL.

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  55. Biocompatibility of conformal silicon carbide on carbon nanowall scaffolds Reviewed Open Access

    Ono, K; Koide, T; Ishikawa, K; Tanaka, H; Kondo, H; Sugawara-Narutaki, A; Jin, Y; Yasuhara, S; Hori, M; Takeuchi, W

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 62 ( SA )   2023.1

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    Silicon carbide (SiC) was coated onto carbon nanowall (CNW) scaffolds using chemical vapor deposition with a vinylsilane precursor at 700 °C to investigate the influence of the wall edge width, wall-to-wall distance, and surface morphology. The wall edge width ranged from 10 nm to those filling the wall-to-wall space without disrupting the CNW morphology. When SiC-coated CNWs (SiC/CNWs) were used as scaffolds for cell culture, cell viability increased until the edge area ratio reached 40%. In over 40% of edge area ratio, cell viability was saturate and comparable to flat surfaces such as SiC films on the Si substrate (SiC/Si) and control samples prepared using polystyrene. Calcification was suppressed in the CNWs, SiC/CNWs, and SiC/Si scaffolds compared to polystyrene. Our results suggest that SiC-coated CNW scaffolds could suppress calcification and promote cell proliferation.

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  56. Science-based, data-driven developments in plasma processing for material synthesis and device-integration technologies Reviewed Open Access

    Kambara, M; Kawaguchi, S; Lee, HJ; Ikuse, K; Hamaguchi, S; Ohmori, T; Ishikawa, K

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 62 ( SA )   2023.1

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    Low-temperature plasma-processing technologies are essential for material synthesis and device fabrication. Not only the utilization but also the development of plasma-related products and services requires an understanding of the multiscale hierarchies of complex behaviors of plasma-related phenomena, including plasma generation in physics and chemistry, transport of energy and mass through the sheath region, and morphology- and geometry-dependent surface reactions. Low-temperature plasma science and technology play a pivotal role in the exploration of new applications and in the development and control of plasma-processing methods. Presently, science-based and data-driven approaches to control systems are progressing with the state-of-the-art deep learning, machine learning, and artificial intelligence. In this review, researchers in material science and plasma processing, review and discuss the requirements and challenges of research and development in these fields. In particular, the prediction of plasma parameters and the discovery of processing recipes are asserted by outlining the emerging science-based, data-driven approaches, which are called plasma informatics.

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  57. Effects of High-Quality Carbon Nanowalls Ionization-Assisting Substrates on Surface-Assisted Laser Desorption/Ionization Mass Spectrometry Performance Reviewed Open Access

    Sakai, R; Kondo, H; Ishikawa, K; Ohta, T; Hiramatsu, M; Tanaka, H; Hori, M

    NANOMATERIALS   Vol. 13 ( 1 )   2023.1

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    Surface-assisted laser desorption/ionization mass spectrometry (SALDI-MS) is performed using carbon nanowalls (CNWs) for ionization-assisting substrates. The CNWs (referred to as high-quality CNWs) in the present study were grown using a radical-injection plasma-enhanced chemical vapor deposition (RI-PECVD) system with the addition of oxygen in a mixture of CH4 and H2 gases. High-quality CNWs were different with respect to crystallinity and C–OH groups, while showing similar wall-to-wall distances and a wettability comparable to CNWs (referred to as normal CNWs) grown without O2. The efficiency of SALDI was tested with both parameters of ion intensity and fragmental efficiency (survival yield (SY)) using N-benzylpyridinuim chloride (N-BP-CI). At a laser fluence of 4 mJ/cm2, normal CNWs had an SY of 0.97 and an ion intensity of 0.13, while 5-sccm-O2– high-quality CNWs had an SY of 0.89 and an ion intensity of 2.55. As a result, the sensitivity for the detection of low-molecular-weight analytes was improved with the high-quality CNWs compared to the normal CNWs, while an SY of 0.89 was maintained at a low laser fluence of 4 mJ/cm2. SALDI-MS measurements available with the high-quality CNWs ionization-assisting substrate provided high ionization and SY values.

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  58. Selective isotropic atomic-layer etching of thin films by using dry chemical removal tool Reviewed

    Shinoda K., Miyoshi N., Kobayashi H., Izawa M., Ishikawa K., Hori M.

    Proceedings of SPIE - The International Society for Optical Engineering   Vol. 12499   2023

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    There has been considerable interest in the development of isotropic atomic layer etching (ALE) for the conformal removal of thin films. Material selectivity is crucial for the development of isotropic ALE because the next generation of semiconductor devices will be constructed with miniaturized 3D structures using a variety of very thin films. We developed plasma-assisted thermal-cyclic ALE, which is a repetition of surface modification by plasma exposure and removal of the modified surface by infrared heating. We developed a 300-mm tool, namely, dry chemical removal (DCR), which is equipped with an inductively coupled plasma (ICP) source and infrared lamps, to facilitate rapid thermal desorption of the modified surface. An important feature of the plasma-assisted thermal-cyclic ALE is that it has more tuning knobs than that of conventional ALE because it uses two temperatures: a low temperature for surface modification and an elevated temperature for the removal of the modified surface. This paper presents the selective ALE of various materials, i.e., Si3N4, TiN, W, and SiGe using the developed tool. The mechanisms of the selectivity are divided into two categories: formation of an ammonium salt-based modified layer and selectivity control by adjusting the infrared heating time. This paper reviews the selective ALE mechanisms, focusing on the results of in situ analysis of surface reactions, and presents some of the latest findings.

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  59. Free radical formation induced by cold atmospheric plasma and its biological implications-Comparison with ionizing radiation- Reviewed

    Kondo Taakshi, Tanaka Hiromasa, Ishikawa Kenji, Hori Masaru

      Vol. 74 ( 2 ) page: 120 - 126   2023

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  60. 総説:プラズマなどで処理された水の多様性 Reviewed

    石川 健治

    静電気学会誌   Vol. 46   page: 209   2023

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  61. Impact of microsecond-pulsed plasma-activated water on papaya seed germination and seedling growth Reviewed

    Xi, DK; Zhang, XH; Yang, SZ; Yap, SS; Ishikawa, K; Hori, M; Yap, SL

    CHINESE PHYSICS B   Vol. 31 ( 12 )   2022.12

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    The seed of Carica papaya consists of a hard shell-like testa with inhibitors in vivo causing slow, erratic and asynchronous germination. In this work, plasma-activated water prepared by microsecond-pulsed plasma jets (μPAW) was applied to treat papaya seeds. The μPAW after plasma activation of 30 min was about 40 °C. The reactive species such as NO2, NO3, and H2O2 in the μPAW activated from deionized water were measured and correlated to the seed germination rate and the seedling growth performance. The μPAW-treated papaya seed achieved a higher germination rate of 90%, which is 26% higher than the control group using deionized water. Comparing the results with a hot water (40 °C) reference group showed that the reactive species in μPAW played primary roles in germination improvement, with little effect caused by the heat shock. The μPAW also sterilized the treated seeds, reducing the germination stress. The morphological change in the seeds was observed by SEM, showing an effect of physical etching after treatment promoting seed imbibition. The biochemical mechanism of the seed germination was deduced with reference to the evolution of surface chemistry, functional groups, and ABA content. The accelerated seed metabolism observed was corresponded to the chemical modification pathway. Besides, early seedlings developed from treated seeds were observed to be healthy, grow more leaves, and have better root structures. The content of MDA in the treated papaya seedlings decreased along with increased SOD and higher ion concentration. The μPAW that can be prepared at atmospheric pressure for bulk production offers a low-risk and cost-effective seed priming technology that may significantly increase the production of agricultural crops.

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  62. Indoor Floor Heel Mark Removal Using Spark Discharges and Pressurized Airflow Reviewed Open Access

    Sakamoto, Y; Tsutsumi, T; Tanaka, H; Ishikawa, K; Hashizume, H; Hori, M

    COATINGS   Vol. 12 ( 12 )   2022.12

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    Heel marks (HMs), which are the black stains made by shoe soles on indoor floors, can be difficult to remove. However, this study shows how spark discharges combined with pressurized airflow in 60 s discharge treatments can remove such HMs. We further show that maximizing the HM removal rates depended on the electrode gap distance because of changes in the spark discharge parameters. In our experiments, the electrical voltage waveforms are shown with voltage spikes, called spark discharges, and the spike numbers were counted in 0.6-ms time units. It was found that the number of spark discharges increases when the electrode gap distance was widened from 5 mm to 10 mm and the pressurized airflow was added, and the HM removal rates increased 11.5%, the HM removal rates could be maximized. Taken together, the results show that spark discharges combined with pressurized air can remove HMs from indoor floors without no visual damage. This paper is a preliminary report showing that HMs can be removed by plasma.

    DOI: 10.3390/coatings12121938

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  63. Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma Reviewed Open Access

    Nguyen, TTN; Shinoda, K; Hamamura, H; Maeda, K; Yokogawa, K; Izawa, M; Ishikawa, K; Hori, M

    SCIENTIFIC REPORTS   Vol. 12 ( 1 ) page: 20394   2022.11

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    Dry etching of ternary metal carbides TiAlC has been first developed by transferring from wet etching to dry etching using a floating wire (FW)-assisted Ar/ammonium hydroxide vapor plasma. FW-assisted non-halogen vapor plasma generated at medium pressure can produce high-density reactive radicals (NH, H, and OH) for TiAlC surface modifications such as hydrogenation and methylamination. A proposed mechanism for dry etching of TiAlC is considered with the formation of the volatile products from the modified layer.

    DOI: 10.1038/s41598-022-24949-1

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  64. Carbon Layer Formation on Hexagonal Boron Nitride by Plasma Processing in Hydroquinone Aqueous Solution Reviewed

    Inoue, K; Sakakibara, N; Goto, T; Ito, T; Shimizu, Y; Hakuta, Y; Ishikawa, K; Hori, M; Terashima, K

    ACS APPLIED MATERIALS & INTERFACES   Vol. 14 ( 47 ) page: 53413 - 53420   2022.11

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    Although hexagonal boron nitride (hBN) is a thermally conductive and electrically insulating filler in composite materials, surface modification remains difficult, which limits its dispersibility and functionalization. In this study, carbon layer formation on hBN particles by plasma processing in hydroquinone aqueous solution was investigated as a surface modification technique. Carbon components with features of polymeric hydrogenated amorphous carbon were found to be uniformly distributed on the hydroquinone-aided plasma-modified hBN (HQpBN) particles. Electron spin resonance measurements revealed abundant unpaired electrons in HQpBN, indicating that defects were formed on hBN by plasma processing and that the carbon layer contained dangling bonds. The defects on hBN could help in the attachment of the carbon layer, whereas the dangling bonds could act as reactive sites for further functionalization. The carbon layer on HQpBN was successfully functionalized with isocyanate groups, thus confirming the ability of this carbon layer to facilitate surface modification. These results demonstrate that the carbon layer formed on hBN can provide a designable interface in organic/inorganic composite materials.

    DOI: 10.1021/acsami.2c15951

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  65. Effects of deposition precursors of hydrogenated amorphous carbon films on the plasma etching resistance based on mass spectrometer measurements and machine learning analysis Reviewed Open Access

    Kurokawa, J; Kondo, H; Tsutsumi, T; Ishikawa, K; Sekine, M; Hori, M

    VACUUM   Vol. 205   2022.11

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    In the growth of hydrogenated amorphous carbon (a-C:H) films by plasma enhanced chemical vapor deposition (PECVD) with H2, CH4 and C3H6 plasma, the gas phase reaction of active species and their contribution to properties of deposited a-C:H film were quantitatively investigated using appearance quadrupole mass spectrometry (QMS) and machine learning. The QMS measurement indicated that two-types of neutral radicals were generated by the dissociation and polymerization of the raw material gasses. A random forest regression model was employed as a prediction model to analyze the correlation between the neutral species and etching rates by molecular oxygen (O2) plasma without any stage bias, which were measured by in-situ ellipsometry. The coefficient of determination (R2), an indicator of the degree of prediction accuracy, was 0.906 and 0.584 for the training and test data, respectively. SHapley Additive exPlanations (SHAP), interpreting the random forest model, were used to quantitatively indicate the contribution of radicals to the etching rate, including their synergistic and secondary effects. They indicated that carbon-rich radicals, such as C3H3 and C5H5, contributed to a decrease in the etching rate, whereas hydrogen-rich radicals, such as CHx (x=1,2,3,4), C2H5, C4H9, and C5H9,11 induced an increase in the etching rate by the O2 plasma. (200 words)

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  66. Dissociation channels of c-C<sub>4</sub>F<sub>8</sub> to C<sub>2</sub>F<sub>4</sub> in reactive plasma Reviewed

    Hayashi, T; Ishikawa, K; Sekine, M; Hori, M; Lwayama, H

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( 10 )   2022.10

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    Progress in computational methods and personal computing has made possible more accurate estimations for primary dissociation channels and energies. The main dissociation route is revealed to be via the 7E excited state with an energy of 12.23 eV, which is composed of transitions from the highest occupied molecular orbital with b1 symmetry to some degenerate unoccupied e molecular orbitals. The main contributing e orbitals consisted of antibonding combination of C2F4 π-bonding orbitals. This degenerate 7E state is lowered by non-adiabatic transitions through the conical interactions on the dissociating route to 2C2F4, so the energy is finally relaxed at the dissociative second lowest 1E excited state leading to 2C2F4 production. In the electron attachment process, the calculated results show that the F- ion is produced from the excited states of the D4h c-C4F8- ion through conical interactions at the energies of 4.3 eV, 5.6 eV, and 5.0 eV, along the C-F dissociation route.

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  67. In-liquid plasma synthesis of iron-nitrogen-doped carbon nanoflakes with high catalytic activity Reviewed

    Kondo, H; Hamaji, R; Amano, T; Ishikawa, K; Sekine, M; Hiramatsu, M; Hori, M

    PLASMA PROCESSES AND POLYMERS   Vol. 19 ( 8 )   2022.8

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    Flake-shaped carbon nanomaterials with nitrogen (N) and iron (Fe) addition, so-called carbon nanoflakes (CNFLs), were synthesized by the in-liquid plasma using two different kinds of additive agents, such as hemin and iron (II) phthalocyanine (FePc). According to scanning electron microscopy images and Raman spectra, CNFLs with a size of at least 100 nm order were formed regardless of types of additive agents, and crystallinity of six-membered ring structures was improved as additive agents increased. Photoelectron spectra showed that pyridinic N contents increased from 1.05% to 2.02% with increasing FePc, while those decreased from 0.34% to 0.14% with hemin. In the oxygen reduction reaction, onset potential values also increased from 0.71 to 0.79 eV with increasing FePc, while those decreased from 0.60 to 0.47 eV with hemin. These results suggested that the catalytic activity of CNFLs was effectively improved by the increase of pyridinic N by the in-liquid plasma synthesis with FePc. In contrast, the electron transfer numbers reached 3.81 when hemin increased, although those were less than 2.88 in the cases using FePc. These results mean that the in-liquid plasma synthesis method of CNFLs using FePc has the potential to further improve its catalytic activity.

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  68. Dry Process

    Akatsuka H., Kurihara K., Toyoda H., Karahashi K., Ishikawa K., Ichiki T., Eriguchi K., Kuboi N., Matsui M., Nunomura S.

    Japanese Journal of Applied Physics   Vol. 61 ( SI )   2022.7

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    DOI: 10.35848/1347-4065/ac6726

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  69. Study of optical emission spectroscopy using modified Boltzmann plot in dual-frequency synchronized pulsed capacitively coupled discharges with DC bias at low-pressure in Ar/O<sub>2</sub>/C<sub>4</sub>F<sub>8</sub> plasma etching process Reviewed

    Sahu, BB; Nakane, K; Ishikawa, K; Sekine, M; Tsutsumi, T; Gohira, T; Ohya, Y; Ohno, N; Hori, M

    PHYSICAL CHEMISTRY CHEMICAL PHYSICS   Vol. 24 ( 22 ) page: 13883 - 13896   2022.6

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    We consider the corona model and local thermal equilibrium approximations of a real plasma to measure the electron temperature (Te) and density (ne), respectively, using the optical emission spectroscopy (OES) method in dual-frequency pulsed capacitively coupled plasmas (CCPs) in a reactive mixture of Ar/O2/C4F8 at a low operating pressure. The operation conditions such as DC continuous and synchronized were used for the study and plasma characterization for the intended plasma application such as high aspect ratio etching (HARE). We show that the present plasma conditions are dominated by a corona balance rather than the supremacy of multi-step excitation. This fact has enabled us to utilize the modified Boltzmann plot technique to evaluate the Te values. In the second method, we simultaneously used the Boltzmann and Saha equations to determine the ne value using the line intensity ratio and the value of Te. Time-resolved measurements of Te and ne were performed for completeness, and the insight of the pulsed discharge was investigated. Time evolution of ne and Te using the OES method revealed a similar trend in the change of plasma parameters, indicating electron impact ionization during the pulse on phase. It was seen that ne in the afterglow speedily decreased within a short time of ∼5 μs. Analysis suggests the formation of afterglow plasmas, which are composed of positive and negative ions with very low electron density. The results revealed that the DC-synchronized operation could be useful for plasma application such as HARE due to different plasma characteristics. It also suggests the production of ion-ion plasmas by the effective utilization of negative ions in the afterglow phase. The corona balance condition was validated in our experiments, and the results were compared with the existing literature.

    DOI: 10.1039/d2cp00289b

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  70. Low-temperature reduction of SnO<sub>2</sub> by floating wire-assisted medium-pressure H<sub>2</sub>/Ar plasma Reviewed

    Nguyen, TTN; Sasaki, M; Hsiao, SN; Tsutsumi, T; Ishikawa, K; Hori, M

    PLASMA PROCESSES AND POLYMERS   Vol. 19 ( 6 )   2022.6

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    Reduction of SnO2 to form spherical Sn particles and Sn etching are obtained by floating wire (FW)-assisted medium-pressure H2/Ar plasma. High-density H2/Ar plasma (1014 cm−3) with a larger treatment area at medium pressure (10 kPa) produces a two-times higher removal rate of SnO2 (0.111 mg/min) than that at atmospheric pressure with the same treatment area of 300 mm2. SnO2 film is removed from the glass surface by a two-step process involving (1) reduction of SnO2 by FW-H2/Ar plasma to form spherical Sn particles and (2) removal of low-contact Sn particles by water-based cleaning. High surface smoothness (roughness of 0.488 nm) and high optical transmittance (>92%) of treated samples indicate no damage compared to that of pristine quartz glass.

    DOI: 10.1002/ppap.202100209

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  71. Cytotoxicity of plasma-irradiated lactate solution produced under atmospheric airtight conditions and generation of the methyl amino group Reviewed

    Ito, D; Iwata, N; Ishikawa, K; Nakamura, K; Hashizume, H; Miron, C; Tanaka, H; Kajiyama, H; Toyokuni, S; Mizuno, M; Hori, M

    APPLIED PHYSICS EXPRESS   Vol. 15 ( 5 )   2022.5

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    Ringer's lactate solution was irradiated with non-equilibrium plasma under airtight conditions. The plasma-activated lactate (PAL) was produced with argon, oxygen, and nitrogen gases following purging of Ar. Cytotoxicity could be controlled by diluting PAL, and a killing effect was selectively obtained on cancer cells compared to normal cells for Ar+O2+N2 PALs. Nonetheless, cytotoxicity was partly reproduced by similar concentrations of H2O2 and NO2- in the PALs. The organics produced by plasma irradiation to lactate were investigated using nuclear magnetic resonance, and the generation of methyl amino species was confirmed.

    DOI: 10.35848/1882-0786/ac6360

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  72. Plasma-assisted thermal-cyclic atomic-layer etching of tungsten and control of its selectivity to titanium nitride Reviewed

    Shinoda, K; Miyoshi, N; Kobayashi, H; Hanaoka, Y; Izawa, M; Ishikawa, K; Hori, M

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 40 ( 2 )   2022.3

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    Plasma-assisted thermal-cyclic atomic-layer etching (ALE) of tungsten (W), the selectivity of which with respect to TiN can be tuned between highly selective and nonselective by changing infrared-heating time, has been demonstrated. It is a two-step process consisting of exposure to radicals generated in a CHF3/O2 or CH2F2/O2/Ar plasma followed by infrared heating. Analysis by in situ x-ray photoelectron spectroscopy confirmed that a WFx-based modified surface formed on the surface of a W film exposed to radicals at -22 °C. The modified surface on the W film is volatile at a heating temperature lower than that required for removing the modified surface on the TiN film. Cyclic etching of both W and TiN was performed by using the CH2F2/O2/Ar plasma and infrared heating in a 300-mm ALE apparatus. When the infrared-heating time was not long enough to remove the modified surface on TiN, the cyclic repetition etched only the W film. On the other hand, when the infrared-heating time was long enough to remove modified surfaces on both W and TiN, the cyclic repetition etched both W and TiN films. Therefore, both highly selective and nonselective ALEs for W and TiN were obtained by choosing an optimum infrared-heating time. This shows that material selectivity in plasma-assisted thermal-cyclic ALE can be controlled by changing the infrared-heating time.

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  73. Scaffolds with isolated carbon nanowalls promote osteogenic differentiation through Runt-related transcription factor 2 and osteocalcin gene expression of osteoblast-like cells Reviewed Open Access

    Ichikawa, T; Ishikawa, K; Tanaka, H; Shimizu, N; Hori, M

    AIP ADVANCES   Vol. 12 ( 2 )   2022.2

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    Carbon nanowalls (CNWs) with average wall-to-wall distances ranging from 100 to 3300 nm were synthesized using a radical injection plasma-enhanced chemical vapor deposition system. Application of a negative high voltage to the growth substrate using an inductor energy storage (IES) circuit provided CNWs with wall-to-wall distances depending on the nano-second pulse voltage of the IES circuit. Sparse isolated CNWs with average wall-to-wall distances of 700 nm were used for culturing Saos-2 cells. These cells showed better adhesion than the control after 2 days’ incubation and enhanced gene expression of the osteogenic differentiation genes Runt-related transcription factor 2 (Runx2) and osteocalcin after 10 days’ incubation. Sparse isolated CNW scaffolds hold promise for regulating the differentiation of osteoblast-like cells.

    DOI: 10.1063/5.0075530

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  74. Enhancement of ethanol production and cell growth in budding yeast by direct irradiation of low-temperature plasma Reviewed Open Access

    Tanaka, H; Matsumura, S; Ishikawa, K; Hashizume, H; Ito, M; Nakamura, K; Kajiyama, H; Kikkawa, F; Ito, M; Ohno, K; Okazaki, Y; Toyokuni, S; Mizuno, M; Hori, M

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SA )   2022.1

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    Ethanol production by budding yeast was compared between direct and indirect plasma irradiation. We observed enhancement of ethanol production and cell growth not by indirect plasma irradiation but by direct plasma irradiation. Glucose consumption was increased in budding yeast by direct plasma irradiation. Extracellular flux analysis revealed that glycolytic activity in the budding yeast was elevated by direct plasma irradiation. These results suggest that direct plasma irradiation enhances ethanol production in budding yeast by elevating the glycolytic activity.

    DOI: 10.35848/1347-4065/ac2037

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  75. Towards prevention and prediction of infectious diseases with virus sterilization using ultraviolet light and low-temperature plasma and bio-sensing devices for health and hygiene care Reviewed International coauthorship Open Access

    Kumagai, S; Nishigori, C; Takeuchi, T; Bruggeman, P; Takashima, K; Takahashi, H; Kaneko, T; Choi, EH; Nakazato, K; Kambara, M; Ishikawa, K

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SA ) page: SA0808   2022.1

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    Inspired by the ideas of many authors, we provide insight on state-of-the-art potential technologies for the prevention and prediction of infectious diseases before they spread. This review also surveys virus sterilization with ultraviolet light and low temperature plasma technologies. Researchers in the various fields of medicine, materials, electronics, and plasma sciences have addressed increasingly challenging demands and the discussion encompasses the major challenges in societies that are faced with the threat of infectious diseases. In addition, technologies that use nanomaterials are evaluated for infection prevention and hygiene purposes. Advances in biomedical diagnostics for health care in terms of complementary metal-oxide-semiconductor transistors-based devices and telemetry for health monitoring are also reviewed.

    DOI: 10.35848/1347-4065/ac1c3d

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  76. Perspectives on functional nitrogen science and plasma-based <i>in situ</i> functionalization Reviewed Open Access

    Ishikawa, K

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SA ) page: SA0802   2022.1

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    Reactive nitrogen species (RNS) generated by controlled electron impacts in conjunction with the use of dinitrogen can react with oxygen and/or hydrogen to generate highly reactive compounds. The related field of functional nitrogen science provides new opportunities for nitrogen utilization based on non-equilibrium plasma processing. This revolutionary technique permits plasma-based nitrogen fixation at the locations at which materials such as dopants and fertilizers are required. This system, based on the in situ generation of RNS at the point of use, is expected to replace conventional processes involving nitrogen cycles employing ammonia and nitric acid. Optimization of this new approach will require nitrogen doping to be tuned by atomic-scale localization of nitrogen. This review discusses the applications of functional nitrogen and the processes by which functionalization in both inorganic materials and living organisms can occur when using RNS.

    DOI: 10.35848/1347-4065/ac3558

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  77. Functional nitrogen science based on plasma processing: quantum devices, photocatalysts and activation of plant defense and immune systems Reviewed International coauthorship Open Access

    Kaneko, T; Kato, H; Yamada, H; Yamamoto, M; Yoshida, T; Attri, P; Koga, K; Murakami, T; Kuchitsu, K; Ando, S; Nishikawa, Y; Tomita, K; Ono, R; Ito, T; Ito, AM; Eriguchi, K; Nozaki, T; Tsutsumi, T; Ishikawa, K

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 61 ( SA ) page: SA0805   2022.1

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    Nitrogen is a very common element, comprising approximately 78% of Earth's atmosphere, and is an important component of various electronic devices while also being essential for life. However, it is challenging to directly utilize dinitrogen because of the highly stable triple bond in this molecule. The present review examines the use of non-equilibrium plasmas to generate controlled electron impacts as a means of generating reactive nitrogen species (RNS) with high internal energy values and extremely short lifetimes. These species include ground state nitrogen atoms, excited nitrogen atoms, etc. RNS can subsequently react with oxygen and/or hydrogen to generate new highly reactive compounds and can also be used to control various cell functions and create new functional materials. Herein, plasma-processing methods intended to provide RNS serving as short-lived precursors for a range of applications are examined in detail.

    DOI: 10.35848/1347-4065/ac25dc

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  78. Wide range applications of process plasma diagnostics using vacuum ultraviolet absorption spectroscopy Reviewed

    Takeda, K; Ishikawa, K; Hori, M

    REVIEWS OF MODERN PLASMA PHYSICS   Vol. 6 ( 1 )   2022

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    Applications of plasma diagnostics using vacuum ultraviolet absorption spectroscopy (VUVAS) in our studies are summarized in this article. The plasma diagnostics with absorption spectroscopy is a powerful tool for investigating behaviors of reactive species in plasma processes, because it enables us to measure the absolute density. In our group, we have focused on the clarification of reaction mechanisms of atomic species in the plasma processes, and the behaviors of atomic species generated in various process plasmas have been investigated using the VUVAS with a plasma light source. Using the VUVAS, we can investigate not only the absolute density but also surface reactions of atomic species in the plasma processes. On the other hand, in our group, the real-time monitoring of atomic species based on VUVAS has been realized in the plasma processes, and the effects of the initial state of reactor wall surface on the behaviors of atomic species in a process plasma have been quantitatively investigated. Moreover, the VUVAS has been applied to the measurements of reactive species generated by atmospheric pressure plasmas which attracts much attention because of its applications to the bio and medical research fields. These results and experimental technique used in our studies are extremely useful for the further developments of plasma processes such as etching, deposition, surface modification, bio-medical applications and so on in the future.

    DOI: 10.1007/s41614-022-00075-3

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  79. Plasma Diagnostics and Characteristics of Hydrofluorocarbon Films in Capacitively Coupled CF<inf>4</inf>/H<inf>2</inf>Plasmas Reviewed

    Hsiao S.N., Imai Y., Britrun N., Tsutsumi T., Ishikawa K., Sekine M., Hori M.

    IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings   Vol. 2022-December   2022

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    Plasma diagnostics including electron density, temperature, neutral atomic densities of the CH4H2 plasmas were performed in a capacitively-coupled reactor using surface-wave probe, Langmuir probe and vacuum ultraviolet absorption spectroscopy. The plasma density increased monotonically with varying H2 content from 30 to 90 %. The electron temperature first decreased with H2 up to 50 % and then increased at higher H2 concentration. The HF concentration reached a maximum value at a H2 of approximately 50 %, which is probably due to balance between H and F radicals from the plasma. Increasing the H2 content resulted in a higher H concentration and a less cross-linked structure of the amorphous hydrofluorocarbon films, analyzed by using in situ Fourier transformation infrared spectroscopy.

    DOI: 10.1109/ISSM55802.2022.10027112

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  80. On the Etching Mechanism of Highly Hydrogenated SiN Films by CF<sub>4</sub>/D<sub>2</sub> Plasma: Comparison with CF<sub>4</sub>/H<sub>2</sub> Reviewed Open Access

    Hsiao, SN; Nguyen, TTN; Tsutsumi, T; Ishikawa, K; Sekine, M; Hori, M

    COATINGS   Vol. 11 ( 12 ) page: 1535   2021.12

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    With the increasing interest in dry etching of silicon nitride, utilization of hydrogencontained fluorocarbon plasma has become one of the most important processes in manufacturing advanced semiconductor devices. The correlation between hydrogen-contained molecules from the plasmas and hydrogen atoms inside the SiN plays a crucial role in etching behavior. In this work, the influences of plasmas (CF4/D2 and CF4/H2 ) and substrate temperature (Ts, from −20 to 50◦ C) on etch rates (ERs) of the PECVD SiN films were investigated. The etch rate performed by CF4/D2 plasma was higher than one obtained by CF4/H2 plasma at substrate temperature of 20◦ C and higher. The optical emission spectra showed that the intensities of the fluorocarbon (FC), F, and Balmer emissions were stronger in the CF4/D2 plasma in comparison with CF4/H2 . From X-ray photoelectron spectra, a thinner FC layer with a lower F/C ratio was found in the surface of the sample etched by the CF4/H2 plasma. The plasma density, gas phase concentration and FC thickness were not responsible for the higher etch rate in the CF4/D2 plasma. The abstraction of H inside the SiN films by deuterium and, in turn, hydrogen dissociation from Si or N molecules, supported by the results of in situ monitoring of surface structure using attenuated total reflectance-Fourier transform infrared spectroscopy, resulted in the enhanced ER in the CF4/D2 plasma case. The findings imply that the hydrogen dissociation plays an important role in the etching of PECVD-prepared SiN films when the hydrogen concentration of SiN is higher. For the films etched with the CF4/H2 at −20◦ C, the increase in ER was attributed to a thinner FC layer and surface reactions. On the contrary, in the CF4/D2 case the dependence of ER on substrate temperature was the consequence of the factors which include the FC layer thickness (diffusion length) and the atomic mobility of the etchants (thermal activation reaction).

    DOI: 10.3390/coatings11121535

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  81. プラズマがん治療 Invited Reviewed

    石川健治,堀勝

    静電気学会誌   Vol. 45 ( 6 ) page: 206 - 212   2021.11

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  82. Effects of hydrogen content in films on the etching of LPCVD and PECVD SiN films using CF<sub>4</sub>/H<sub>2</sub> plasma at different substrate temperatures Reviewed

    Hsiao, SN; Britun, N; Nguyen, TTN; Tsutsumi, T; Ishikawa, K; Sekine, M; Hori, M

    PLASMA PROCESSES AND POLYMERS   Vol. 18 ( 11 ) page: 2100078   2021.11

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    The dependences of etching characteristics on substrate temperature (Ts, from –20 to 50°C) of the plasma-enhanced chemical vapor deposition (PECVD) SiN films (PE-SiN) and low-pressure chemical vapor deposition (LPCVD) SiN films (LP-SiN) with CF4/H2 plasma were investigated. The Fourier-transform infrared spectroscopy shows that both film types were N–H bond-rich films, but in different hydrogen contents (PE-SiN 22.7 at% and LP-SiN 3.8 at%) from the Rutherford backscattering spectroscopy analyses. A higher hydrogen content led to a thinner fluorocarbon thickness because of the reaction between hydrogen outflux and C and N to form an HCN byproduct. The etch rates (ER) for the PE-SiN were higher than that of the LP-SiN at all Ts, due to the different FC thickness and etching mechanisms proposed. The formation of the N−Hx layer on PE-SiN at low temperature caused the decrease in ER. For the LP-SiN, the weak dependences of Ts on surface structure and ER were observed.

    DOI: 10.1002/ppap.202100078

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  83. Plasma-activated Ringer's lactate solution inhibits the cellular respiratory system in HeLa cells Reviewed

    Tanaka, H; Maeda, S; Nakamura, K; Hashizume, H; Ishikawa, K; Ito, M; Ohno, K; Mizuno, M; Motooka, Y; Okazaki, Y; Toyokuni, S; Kajiyama, H; Kikkawa, F; Hori, M

    PLASMA PROCESSES AND POLYMERS   Vol. 18 ( 10 ) page: 2100056   2021.10

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    Nonequilibrium atmospheric pressure plasma has enabled a variety of new applications in medicine, agriculture, and other industries. It is particularly noteworthy that plasma itself and/or plasma-activated culture medium have been shown to preferentially kill various cancer cells. We have previously developed a plasma-activated Ringer's lactate solution (PAL) for use as a new cancer treatment. In this study, behaviors of extracellular and intracellular reactive oxygen and nitrogen species in the cellular respiratory system of PAL-treated HeLa cells were investigated using an extracellular flux analyzer and a probe to measure mitochondrial membrane potential. In PAL-treated HeLa cells, extracellular hydrogen peroxide in PAL was found to be responsible for the induction of intracellular hydrogen peroxide and apoptosis, while other components in PAL are responsible for the induction of non-H2O2 intracellular ROS and non-apoptotic cell death, which should be clarified by further experiments. We believe that these are long-lived species derived from plasma-activated lactates. Furthermore, we found that the plasma-activated lactates inhibited glycolysis and the tricarboxylic acid (TCA) cycle, but not the electron transport chain in HeLa cells. These results suggest that PAL induces multiple modes of cell death, including apoptosis through hydrogen peroxide, and non-apoptotic cell death associated with the impairment of mitochondrial functions (glycolysis and TCA cycle). These findings shed light on the novel mechanism underlying plasma-activated lactate-induced cell death.

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  84. Low temperature plasma irradiation products of sodium lactate solution that induce cell death on U251SP glioblastoma cells were identified Reviewed Open Access

    Tanaka, H; Hosoi, Y; Ishikawa, K; Yoshitake, J; Shibata, T; Uchida, K; Hashizume, H; Mizuno, M; Okazaki, Y; Toyokuni, S; Nakamura, K; Kajiyama, H; Kikkawa, F; Hori, M

    SCIENTIFIC REPORTS   Vol. 11 ( 1 ) page: 18488   2021.9

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    Low-temperature plasma is being widely used in the various fields of life science, such as medicine and agriculture. Plasma-activated solutions have been proposed as potential cancer therapeutic reagents. We previously reported that plasma-activated Ringer’s lactate solution exhibited selective cancer-killing effects, and that the plasma-treated L-sodium lactate in the solution was an anti-tumor factor; however, the components that are generated through the interactions between plasma and L-sodium lactate and the components responsible for the selective killing of cancer cells remain unidentified. In this study, we quantified several major chemical products, such as pyruvate, formate, and acetate, in plasma-activated L-sodium lactate solution by nuclear magnetic resonance analysis. We further identified novel chemical products, such as glyoxylate and 2,3-dimethyltartrate, in the solution by direct infusion-electrospray ionization with tandem mass spectrometry analysis. We found that 2,3-dimethyltartrate exhibited cytotoxic effects in glioblastoma cells, but not in normal astrocytes. These findings shed light on the identities of the components that are responsible for the selective cytotoxic effect of plasma-activated solutions on cancer cells, and provide useful data for the potential development of cancer treatments using plasma-activated L-sodium lactate solution.

    DOI: 10.1038/s41598-021-98020-w

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  85. Leading edge of transcendental dry etching technology realizing advanced decice structures Invited Reviewed

    Kenji Ishikawa, and Keigo Takeda

    Journal of plasma and fusion research   Vol. 97 ( 9 ) page: 534 - 536   2021.9

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  86. Effects of free radicals generated by atmospheric pressure plasma on physical actions and biochemical relaxations (PACR) Invited Reviewed

    Kenji Ishikawa, Hiroshi Hashizume, Camelia Miron, Hiromasa Tanaka, and Masaru Hori

    Radiation biology research communications   Vol. 56 ( 3 ) page: 280 - 294   2021.9

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  87. Reaction control of atomic layer and low dame processes for plasma etching of nitride semiconductor Invited Reviewed

    Takayoshi Tsutsumi, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori

    Journal of plasma and fusion research   Vol. 97 ( 9 ) page: 517 - 521   2021.9

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  88. Leading edge of transcendental dry etching technology realizing advanced decice structures Invited Reviewed

    Kenji Ishikawa, and Keigo Takeda

    Journal of plasma and fusion research   Vol. 97 ( 9 ) page: 508 - 510   2021.9

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  89. Novel Method of Rebound Tailing Pulse (RTP) for Water Dissociation Reviewed

    Shimizu, N; Borude, RR; Tanaka, R; Ishikawa, K; Oda, O; Hosoe, H; Ino, S; Inoue, Y; Hori, M

    IEEE TRANSACTIONS ON PLASMA SCIENCE   Vol. 49 ( 9 ) page: 2893 - 2900   2021.9

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    Simple low-temperature pulsed power dissociation method for high resistive liquid is proposed in this article. Active high voltage rebound tailing pulse (RTP) diodes are adopted to conventional high voltage pulse power sources. In order to explain this method, the study was performed using deionized water (DIW) (high resistive >17MΩcm) electrolysis with two immersed electrodes. The forward pulses, the full-width at half-maximum (FWHM) of 400 ns and forward voltage (7 kV) with rising-up ratio (dV/dt) of 1011 V/s, were applied to the electrodes. When a 5 kV RTP diode was simply adopted to this electrical circuit and DIW load in series, the high forward voltage pulse and continuous high reverse current were applied to this circuit. Then, H2 was generated at the anode electrode and OH radical (OH) in the water vessel. Those phenomena were apparently dependent on the anode electrode area. At the beginning of the forwarded high voltage application, the circuit behaved as capacitance load with generated ions and built up charges at the interface between DIW and the electrode. Continuous rebounded high reverse voltage and highly built-up reverse recovery charges induce avalanche breakdown of RTP diode. The rebounded electrical current was found to be collected in the circuit, accompanied by the generation of hydrogen and OH, as well as the tailing current flowing at the interface as a resistive load. In consequence, we point out that rebounded electrons injected from the surrounding water to the anode electrode interface induced the water electrolysis characteristically, according to RTP-diode inserted in the circuit.

    DOI: 10.1109/TPS.2021.3102639

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  90. Lysosomal nitric oxide determines transition from autophagy to ferroptosis after exposure to plasma-activated Ringer's lactate Reviewed Open Access

    Jiang, L; Zheng, H; Lyu, QY; Hayashi, S; Sato, K; Sekido, Y; Nakamura, K; Tanaka, H; Ishikawa, K; Kajiyama, H; Mizuno, M; Hori, M; Toyokuni, S

    REDOX BIOLOGY   Vol. 43   page: 101989   2021.7

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    Non-thermal plasma (NTP), an engineered technology to generate reactive species, induces ferroptosis and/or apoptosis specifically in various-type cancer cells. NTP-activated Ringer's lactate (PAL) is another modality for cancer therapy at preclinical stage. Here we found that PAL induces selective ferroptosis of malignant mesothelioma (MM) cells, where non-targeted metabolome screening identified upregulated citrulline-nitric oxide (.NO) cycle as a PAL target .NO probe detected biphasic peaks transiently at PAL exposure with time-dependent increase, which was responsible for inducible .NO synthase (iNOS) overexpression through NF-κB activation. .NO and lipid peroxidation occupied lysosomes as a major compartment with increased TFEB expression. Not only ferrostatin-1 but inhibitors for .NO and/or iNOS could suppress this ferroptosis. PAL-induced ferroptosis accompanied autophagic process in the early phase, as demonstrated by an increase in essential amino acids, LC3B-II, p62 and LAMP1, transforming into the later phase with boosted lipid peroxidation. Therefore, .NO-mediated lysosomal impairment is central in PAL-induced ferroptosis.

    DOI: 10.1016/j.redox.2021.101989

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  91. Brain cell proliferation in adult rats after irradiation with nonequilibrium atmospheric pressure plasma Reviewed Open Access

    Yamato, M; Tamura, Y; Tanaka, H; Ishikawa, K; Ikehara, Y; Hori, M; Kataoka, Y

    APPLIED PHYSICS EXPRESS   Vol. 14 ( 6 ) page: 067002   2021.6

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    Nonequilibrium atmospheric pressure plasma (NEAPP) has the potential for a wide range of medical applications, including wound healing, blood coagulation, and malignant cell apoptosis. However, its effect on the mammalian central nervous system remains unclear. We studied histological changes in the cerebral cortex of adult rats, following irradiation of the brain surface with NEAPP. NEAPP irradiation made three laminar tissue structures and induced high proliferation of brain-resident immature cells as well as bone marrow-derived cells. These observations indicate that NEAPP irradiation induced rearrangement of cellular and tissue organization, including cell proliferation in the central nervous system in vivo.

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  92. Hydrogen peroxide in lactate solutions irradiated by non-equilibrium atmospheric pressure plasma Reviewed

    Liu, Y; Ishikawa, K; Miron, C; Hashizume, H; Tanaka, H; Hori, M

    PLASMA SOURCES SCIENCE & TECHNOLOGY   Vol. 30 ( 4 )   2021.4

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    A mechanism of hydrogen peroxide (H2O2) generation in plasma-activated lactated Ringer's solution (PAL) has been analyzed. PAL was produced by irradiating a sodium lactate solution, a class of hydroxy acid, with non-equilibrium atmospheric pressure plasma (NEAPP). The concentration of H2O2 generation was dependent on the initial lactate concentrations, which ranged from 0-28 mM. However, the generation of H2O2 was inhibited by higher lactate concentration. The formation of H2O2 is proposed by catalyzed lactate and radicals in aqueous solution, such as OH, H and OO, during the plasma treatments.

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  93. Influences of substrate temperatures on etch rates of PECVD-SiN thin films with a CF<sub>4</sub>/H<sub>2</sub> plasma Reviewed

    Hsiao, SN; Nakane, K; Tsutsumi, T; Ishikawa, K; Sekine, M; Hori, M

    APPLIED SURFACE SCIENCE   Vol. 542   page: 148550   2021.3

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    The dependence of substrate temperatures (50 to −20 °C) on etch rate in two kinds of PECVD SiN films were investigated by a CF4/H2 mixture plasma. The XRR and XPS results indicate that the chemical composition and film density were almost identical for the films. The FTIR shows that the ratio of N[sbnd]H and Si[sbnd]H groups were found to be significantly different in the SiN films. The N[sbnd]H rich films exhibited a lower etch rate at −20 °C than that observed at room temperature or higher, whereas the Si[sbnd]H rich films showed a higher etch rate at −20 °C. We found that the fluorocarbon thickness was thicker in the Si[sbnd]H rich samples than N[sbnd]H rich samples. The fact suggests that hydrogen originated from the broken Si[sbnd]H bonds enhanced the polymerization, which causes the decrease of etch rate. A thinner fluorocarbon thickness was found in the Si[sbnd]H rich samples at low temperature, which results in the higher etch rate. Angular-resolved XPS indicates that N[sbnd]H bonding formed easier on film surface at −20 °C. These results indicate that the bonding structure and substrate temperature affected the fluorocarbon thickness, fluorine reaction probability and hydrogen dissociation during the SiN etching.

    DOI: 10.1016/j.apsusc.2020.148550

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  94. Selective etching of SiN against SiO2 and poly-Si films in hydrofluoroethane chemistry with a mixture of CH2FCHF2, O2, and Ar Reviewed

    Hsiao, SN; Ishikawa, K; Hayashi, T; Ni, JW; Tsutsumi, T; Sekine, M; Hori, M

    APPLIED SURFACE SCIENCE   Vol. 541   page: 148439   2021.3

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    Gas chemistry has a significant impact on etch selectivity in semiconductor device fabrication, which is important for realization of atomic-scale removal and formation of high-aspect ratio features. To widen the controllable changes in the etchant composition in etching processes, our previous calculation showed the possibility of the controllable generation of CH2F and CHF2 related ions and radicals from a 1,1,2-trifluoroethane (CH2FCHF2) parent gas. The etch selectivity among silicon nitride (SiN), silicon dioxide (SiO2) and poly-Si films using CH2FCHF2 plasma mixed with O2 and Ar was investigated. The effects of the CH2FCHF2 and O2 partial pressures on the composition of CHF2+ and CH2F+ ions, which were measured with a quadrupole mass spectrometer, and on the possible reactions with respect to the CH2FCHF2 and O2 mixed gas phase were investigated using quantum chemical calculations. The etch selectivity was investigated through surface etching reactions for SiN, SiO2, and poly-Si films.

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  95. FOREWORD Mechanistic understanding of cold atmospheric plasma applications Reviewed Open Access

    Kurihara, K; Ishikawa, K; Takaki, K; Shiratani, M

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( 2 )   2021.2

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  96. Growth inhibition effect on <i>Trypanosoma brucei</i> <i>gambiense</i> by the oxidative stress supplied from low-temperature plasma at atmospheric pressure Reviewed Open Access

    Yokoyama, N; Sivakumar, T; Ikehara, S; Akimoto, Y; Yamaguchi, T; Wakai, K; Ishikawa, K; Hori, M; Shimizu, T; Sakakita, H; Ikehara, Y

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 60 ( 2 ) page: 020601   2021.2

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    Trypanosoma brucei (Tb) is a pathogenic protozoan causing sleeping sickness in humans. Despite little knowledge of how the produced reactive oxygen species (ROS) kills this protozoan, the research on the killing mechanism using chemical compounds and the phagosome in the macrophages has suggested that the protozoan is highly susceptible to the increased oxidative stress. Because the prescribed drug can react with various kinds of molecules and the second produced intermediate compounds, in this study, we clarified the immediate killing effect on Tb in the condition of increased oxidative stress using a low-temperature plasma at atmospheric pressure (LTP) equipment. Results Show the significant growth inhibition of Tb in the LTP-treated medium, the loss of morphological homeostasis with twisted to puffed appearance, and demonstrated the swelled changes on mitochondria and endoplasmic reticulum. In conclusion, this study revealed how the increased oxidative stress kills Tb using LTP technology.

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  97. Effects of Carbon Nanowalls (CNWs) Substrates on Soft Ionization of Low-Molecular-Weight Organic Compounds in Surface-Assisted Laser Desorption/Ionization Mass Spectrometry (SALDI-MS) Reviewed Open Access

    Sakai, R; Ichikawa, T; Kondo, H; Ishikawa, K; Shimizu, N; Ohta, T; Hiramatsu, M; Hori, M

    NANOMATERIALS   Vol. 11 ( 2 ) page: 1 - 11   2021.2

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    Carbon nanowalls (CNWs), which are vertically oriented multi-layer graphene sheets, were employed in surface-assisted laser desorption/ionization mass spectrometry (SALDI-MS) measurements to detect low-molecular-weight organic compounds. CNWs substrates with widely different wall-to-wall distances from 142 to 467 nm were synthesized using a radical-injection plasma-enhanced chemical vapor deposition (RI-PECVD) system with nanosecond pulse biasing to a sample stage. When survival yield (SY) values of N-benzylpyridinium chloride (N-BP-Cl) were examined, which is commonly used to evaluate desorption/ionization efficiency, a narrower wall-to-wall distance presented a higher SY value. The highest SY value of 0.97 was realized at 4 mJ/cm2 for the highest-density CNWs with a wall-to-wall distance of 142 nm. The laser desorption/ionization effect of arginine, an amino acid, was also investigated. When CNWs with a narrower wall-to-wall distance were used, the signal-to-noise (SN) ratios of the arginine signals were increased, while the intensity ratios of fragment ions to arginine signals were suppressed. Therefore, the CNWs nanostructures are a powerful tool when used as a SALDI substrate for the highly efficient desorption/ionization of low-molecular-weight biomolecules.

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  98. Impact of seed color and storage time on the radish seed germination and sprout growth in plasma agriculture Reviewed International coauthorship Open Access

    Attri, P; Ishikawa, K; Okumura, T; Koga, K; Shiratani, M; Mildaziene, V

    SCIENTIFIC REPORTS   Vol. 11 ( 1 ) page: 2539   2021.1

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    The use of low-temperature plasma for the pre-sowing seed treatment is still in the early stage of research; thus, numerous factors affecting germination percentage, seedling growth, and yield remains unknown. This study aimed to estimate how two critical factors, such as harvest year and seed coat color, affect the percentage of germination and seedling growth after plasma treatment. Radish seeds stored for 2 and 1 year after harvesting (harvested in 2017 and 2018) were sorted into two colors (brown and grey) to investigate the plasma effect on harvest year and seed coat color. We analyzed the amounts of seed phytohormones and antioxidant (γ-tocopherol) were analyzed using mass spectrometry, and physical changes were studied using SEM, EDX, and EPR to understand the mechanism of plasma-induced changes in radish seeds. The obtained results revealed that plasma treatment on seeds affects the germination kinetics, and the maximal germination percentage depends on seed color and the time of seed storage after harvest. Through this study, for the first time, we demonstrated that physical and chemical changes in radish seeds after plasma treatment depends upon the seed color and harvest year. Positive effects of plasma treatment on growth are stronger for sprouts from seeds harvested in 2017 than in 2018. The plasma treatment effect on the sprouts germinated from grey seeds effect was stronger than sprouts from brown radish seeds. The amounts of gibberellin A3 and abscisic acid in control seeds strongly depended on the seed color, and plasma induced changes were better in grey seeds harvested in 2017. Therefore, this study reveals that Air scalar-DBD plasma's reactive oxygen and nitrogen species (RONS) can efficiently accelerate germination and growth in older seeds.

    DOI: 10.1038/s41598-021-81175-x

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  99. Insights into normothermic treatment with direct irradiation of atmospheric pressure plasma for biological applications Reviewed

    Yoshimura S., Otsubo Y., Yamashita A., Ishikawa K.

    Japanese Journal of Applied Physics   Vol. 60 ( 1 ) page: 010502   2021.1

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    Characterizing the interactions between plasma and living organisms has become a multidisciplinary topic in the field of low-temperature plasma science and technology. Living organisms are hierarchically comprised of cells, tissues, organs, and organ systems. Adaptive responses are systematically controlled by the state of the surrounding environment, such as when living organisms are irradiated with discharge plasma. This review is written from a biological perspective and focuses on the importance of gas temperature control in nonequilibrium atmospheric pressure plasmas. We discuss the critical parameters associated with direct plasma treatments of living organisms. This review provides an assessment of the status of this research field and addresses the prospects for further developments in understanding the interactions between plasma and living organisms. We address the importance and necessity of normothermic plasma treatment, where an experimental system involving living organisms is controlled at an optimal temperature, which plays a significant role in plasma biology.

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  100. Reduction in photon-induced interface defects by optimal pulse repetition rate in the pulse-modulated inductively coupled plasma Reviewed

    Miyoshi Y., Ishikawa K., Sekine M., Hori M., Tatsumi T.

    Japanese Journal of Applied Physics   Vol. 60 ( 1 ) page: 010906   2021.1

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    The ultraviolet photon-induced interface defects that degrade the performance of a semiconductor device are reduced by the optimal pulse repetition rate of a pulse-modulated inductively coupled plasma. The defect density depends on the pulse repetition rates; it takes minimum value at a few hundred pulses s−1 and peaks at a few k pulses s−1. The repetition rate-dependent behavior is suggested to be caused by the transient behavior between the plasma's ON and OFF phases. Note that controlling the transient behavior for reducing the photon-induced damage is essential.

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  101. Improvement of yield and grain quality by periodic cold plasma treatment with rice plants in a paddy field Reviewed

    Hashizume, H; Kitano, H; Mizuno, H; Abe, A; Yuasa, G; Tohno, S; Tanaka, H; Ishikawa, K; Matsumoto, S; Sakakibara, H; Nikawa, S; Maeshima, M; Mizuno, M; Hori, M

    PLASMA PROCESSES AND POLYMERS   Vol. 18 ( 1 ) page: 2000181   2021.1

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    The application of cold plasma has attracted considerable attention in the field of agriculture. We examined the effects of plasma irradiation and treatment with plasma-activated Ringer's lactate solution (PAL) on rice seedlings in a paddy field. Irradiation during the vegetative growth period increased seedling growth, panicle number, and grain yield. In contrast, treatment during the reproductive growth period had a negative or no effect. Moreover, treatment with PAL solution promoted the growth of the main stem, such as grain number and panicle weight, and grain quality, but the grain yield from the whole plant was decreased. The results suggest that cold plasma treatment of rice seedlings is effective for improving plant growth, grain yield, and grain quality.

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  102. Cancer Treatments Using Low-Temperature Plasma Reviewed

    Tanaka, H; Mizuno, M; Ishikawa, K; Toyokuni, S; Kajiyama, H; Kikkawa, F; Hori, M

    CURRENT MEDICINAL CHEMISTRY   Vol. 28 ( 41 ) page: 8549 - 8558   2021

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    Low-temperature plasma (LTP) is a partially ionized gas that contains elec-trons, ions, radicals, light, etc. Recently, the bio-medical application of LTP has become a hot topic in plasma science and biological science. Cancer treatment with plasma is the most challenging topic in plasma bio-medical applications. Many in vitro and in vivo ex-periments have been conducted to investigate the anti-tumor effects of LTP. Extracellular reactive oxygen and nitrogen species (RONS) in plasma-activated solutions are key factors for the anti-tumor effects, and amino acid modifications by LTP may affect cellular responses. Intracellular RONS are also key factors for the anti-tumor effects. Various signaling pathways, such as p53 signaling pathways, survival and proliferation signaling pathways, and oxidative stress-dependent signaling pathways are activated by LTP.

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  103. Numerical analysis of high-electron-density atmospheric pressure argon streamer under a pin-to-plane electrode geometry: Effects of applying voltage polarity Reviewed

    Sato Y., Ishikawa K., Tsutsumi T., Ui A., Akita M., Oka S., Hori M.

    47th EPS Conference on Plasma Physics, EPS 2021   Vol. 2021-June   page: 45 - 48   2021

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  104. Reaction science of layer-by-layer thinning of graphene with oxygen neutrals at room temperature Reviewed

    Sugiura, H; Kondo, H; Higuchi, K; Arai, S; Hamaji, R; Tsutsumi, T; Ishikawa, K; Hori, M

    CARBON   Vol. 170   page: 93 - 99   2020.12

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    Controlling the layers and in-plane defects in multi-layer graphene is the key to exploiting the extraordinary properties of graphene. Layer-by-layer thinning under high-density oxygen neutrals was observed in situ during room-temperature reaction science using a remote oxygen plasma inside a high-voltage transmission electron microscopy. Even though the etching rate of graphene was higher at the edge than at the basal plane, etching started from both locations. Each etched layer was represented by the plasmon loss intensity in the electron energy loss spectrum. After exposure to the remote oxygen plasma, the electron diffraction pattern for the multi-layer graphene keep clear six-fold diffraction pattern. Raman spectroscopy revealed the formation of defects in multi-layer graphene. The nonthermal reaction of oxygen neutrals required for graphene etching was demonstrated by in situ transmission electron microscopy.

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  105. Influence of chamber pressure on the crystal quality of homo-epitaxial GaN grown by radical-enhanced MOCVD (REMOCVD) Reviewed

    Amalraj, FW; Shimizu, N; Oda, O; Ishikawa, K; Hori, M

    JOURNAL OF CRYSTAL GROWTH   Vol. 549   page: 125863   2020.11

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    III-nitride was grown by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) with a very high-frequency electric source 100 MHz, using nitrogen and hydrogen as a source gas free from ammonia gas. Applying radio frequency (RF) power at the top electrode generates activated nitrogen, hydrogen, and other nitrogen species. Homoepitaxial gallium nitride (GaN) growth was studied as a function of chamber pressure by REMOCVD. The grown GaN was characterized by scanning electron microscope (SEM), atomic force microscope (AFM), and double crystal X-ray diffraction (XRD). Ga radicals and N radicals were detected by optical emission spectroscopy (OES) as a function of chamber pressure. The V/III ratio changes with the N2*/Ga* ratio, and the step flow growth of GaN was achieved under the chamber pressure of 300 Pa.

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  106. Steering of surface discharges on through-glass-vias combined with high-density nonequilibrium atmospheric pressure plasma generation Reviewed

    Sato, Y; Katsuno, K; Odaka, H; Imajyo, N; Ishikawa, K; Hori, M

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 53 ( 43 ) page: 534302   2020.10

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    The concept of using a glass substrate with fine through-holes filled with metal, called through-glass-vias (TGVs), for an inner wall of an enclosure of a nonequilibrium atmospheric pressure plasma source was validated to extend its processing area with high plasma densities maintained. When applying the TGV substrate into an inner wall of the plasma source, the generated discharge was less likely to drift along with the gas flow, which resembled the behavior of locally high electric fields of the plasma source, called the creeping mode. The decrease in breakdown voltage was also observed. These phenomena are caused by the TGV areas acting as a steering control material in the enclosure of the plasma source. The location of the TGV areas affected the behavior of the generated plasma. The shape of the plasma was accomplished to arbitrarily and locally control by the placement of TGVs.

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  107. Formation of spherical Sn particles by reducing SnO<sub>2</sub> film in floating wire-assisted H<sub>2</sub>/Ar plasma at atmospheric pressure Reviewed Open Access

    Nguyen, TTN; Sasaki, M; Tsutsumi, T; Ishikawa, K; Hori, M

    SCIENTIFIC REPORTS   Vol. 10 ( 1 ) page: 17770   2020.10

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    A green method to synthesize spherical Sn particles by reducing SnO2 film in atmospheric-pressure H2/Ar plasma at low temperatures for various applications is presented. The floating wire-assisted remotely-generated plasma with a mixture of 0.05% H2/Ar gas formed spherical metallic Sn particles by reducing a SnO2 layer on glass substrate. During the reduction process, H radical density was measured by using vacuum ultraviolet absorption spectroscopy, and plasma properties including electron density and gas temperature were diagnosed by optical emission spectroscopy. The inductively coupled generated plasma with a high electron density of 1014 cm−3, a hydrogen atom density of 1014 cm−3, and a gas temperature of 940 K was obtained at a remote region distance of 150 mm where the SnO2/glass substrate was placed for plasma treatment. The process has been modeled on the spherical Sn formation based on the reduction of SnO2 films using H radicals. Depending on the treatment condition, the total reduction area, where spherical Sn particles formed, was enlarged and could reach 300 mm2 after 2 min. The substrate temperature affected the expansion rate of the total reduction area and the growth of the Sn spheres.

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  108. Roles of Atomic Nitrogen/Hydrogen in GaN Film Growth by Chemically Assisted Sputtering with Dual Plasma Sources Reviewed Open Access

    Tanide, A; Nakamura, S; Horikoshi, A; Takatsuji, S; Kimura, T; Kinose, K; Nadahara, S; Nishikawa, M; Ebe, A; Ishikawa, K; Oda, O; Hori, M

    ACS OMEGA   Vol. 5 ( 41 ) page: 26776 - 26785   2020.10

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    The growth of sputtered GaN at low temperature is strongly desired to realize the dissemination of low-cost GaN high electron mobility transistor devices for next-generation communication technology. In this work, the roles of atomic nitrogen (N)/hydrogen (H) in GaN film growth on AlN/sapphire substrates by chemically assisted dual source sputtering are studied at a low growth temperature of 600 °C under a pressure of 2 Pa using vacuum ultraviolet absorption spectroscopy. The lateral growth was strongly enhanced with an appropriate H/N flux ratio of 1.9 at a GaN growth rate of ∼1 μm h-1. X-ray photoelectron spectroscopy measurements indicated that N removal from the grown GaN surface by atomic hydrogen promoted the migration of Ga. A smooth GaN surface was achieved at a suitable N/Ga supply ratio of 53 and a H/N ratio of 1.9 with the addition of 0.5% chlorine to the Ar sputtering gas.

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  109. Laser-induced-plasma-activated medium enables killing of HeLa cells Reviewed

    Kurokawa Y., Takeda K., Ishikawa K., Tanaka H., Hori M.

    Applied Physics Express   Vol. 13 ( 10 )   2020.10

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    Plasma-activated medium (PAM) is defined as a medium irradiated with non-thermal plasma; multiple in vitro and animal experiments have demonstrated that PAM exhibits anti-tumor effects against various cancers. PAM contains various reactive species that contribute to these anti-tumor effects. To increase the abundance of such reactive species, we used laser-generated plasma (LGP). We used a LGP consisting of 200 ns pulsed plasma with an electron density of approximately 7.0 × 1018 cm−3, which is an extremely high electron density, exceeding those of other atmospheric pressure plasmas. We created a laser-generated-plasma-activated medium (LPAM), and treated HeLa cells with the LPAM in both the presence and absence of catalase. Both with and without catalase, the LPAM treatment yielded strong anti-cancer effects against HeLa cells. Surprisingly, we observed morphological differences between HeLa cells grown in LPAM prepared with and without catalase. These results suggested that LPAM induces the cell death through extracellular hydrogen peroxide-dependent and -independent processes.

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  110. Adjusted multiple gases in the plasma flow induce differential antitumor potentials of plasma-activated solutions Reviewed

    Nakamura, K; Yoshikawa, N; Yoshihara, M; Ikeda, Y; Higashida, A; Niwa, A; Jindo, T; Tanaka, H; Ishikawa, K; Mizuno, M; Toyokuni, S; Hori, M; Kikkawa, F; Kajiyama, H

    PLASMA PROCESSES AND POLYMERS   Vol. 17 ( 10 ) page: 1900259   2020.10

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    We present a novel plasma system that can generate a plasma-activated medium by changing the proportion of reactive gases such as oxygen, nitrogen, and hydrogen in the plasma flow. The correlation between the biological activity of plasma-activated solutions prepared under multiple plasma gas-flow conditions was evaluated. Mixed nitrogen, in addition to oxygen, in the gas flow is most powerful for producing plasma-activated Ringer's lactate solution against antitumor effects on ovarian cancer cells as compared with oxygen or nitrogen alone. The antitumor effect of plasma-activated solutions is controllable by the modification of the proportion of reactive gases (especially nitrogen and oxygen gases) in the plasma flow. These results suggest that the plasma flow conditions may be one of the candidates for the specifications of the plasma-activated solutions to the therapeutic effect.

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  111. Small size gold nanoparticles enhance apoptosis-induced by cold atmospheric plasma via depletion of intracellular GSH and modification of oxidative stress Reviewed Open Access

    Jawaid, P; Rehman, MU; Zhao, QL; Misawa, M; Ishikawa, K; Hori, M; Shimizu, T; Saitoh, J; Noguchi, K; Kondo, T

    CELL DEATH DISCOVERY   Vol. 6 ( 1 ) page: 83   2020.9

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    Gold nanoparticles (Au-NPs) have attracted attention as a promising sensitizer owing to their high atomic number (Z), and because they are considered fully multifunctional, they are preferred over other metal nanoparticles. Cold atmospheric plasma (CAP) has also recently gained attention, especially for cancer treatment, by inducing apoptosis through the formation of reactive oxygen species (ROS). In this study, the activity of different sized Au-NPs with helium-based CAP (He-CAP) was analyzed, and the underlying mechanism was investigated. Treating cells with only small Au-NPs (2 nm) significantly enhanced He-CAP-induced apoptosis. In comparison, 40 nm and 100 nm Au-NPs failed to enhance cell death. Mechanistically, the synergistic enhancement was due to 2 nm Au-NPs-induced decrease in intracellular glutathione, which led to the generation of intracellular ROS. He-CAP markedly induced ROS generation in an aqueous medium; however, treatment with He-CAP alone did not induce intracellular ROS formation. In contrast, the combined treatment significantly enhanced the intracellular formation of superoxide (O2• −) and hydroxyl radical (•OH). These findings indicate the potential therapeutic use of Au-NPs in combination with CAP and further clarify the role of Au-NPs in He-CAP-aided therapies.

    DOI: 10.1038/s41420-020-00314-x

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  112. Numerical analysis of coaxial dielectric barrier helium discharges: three-stage mode transitions and internal bullet propagation Reviewed Open Access

    Sato, Y; Ishikawa, K; Tsutsumi, T; Hori, M

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 8 ) page: 086001   2020.8

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    He discharge in a coaxial dielectric barrier discharge (DBD) device develops in three stages: first, a Townsend-glow-type plasma spreads in the region between the electrodes; second, a plasma bullet (streamer type discharge) propagates axially and; third, the bullet transitions into a surface discharge at the dielectric surface. These mode transitions are quite different from planar type DBD, in which one discharge mode basically corresponds to one discharge pulse. From fluid-based numerical analysis, the bullet propagation is obeyed by trapping with strong electric fields induced by grounded electrode underneath the dielectric barrier and by surface charge accumulated on the dielectric surface.

    DOI: 10.35848/1882-0786/aba3f2

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  113. Plasma Agriculture from Laboratory to Farm: A Review Reviewed Open Access

    Attri, P; Ishikawa, K; Okumura, T; Koga, K; Shiratani, M

    PROCESSES   Vol. 8 ( 8 ) page: 1002   2020.8

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    In recent years, non-thermal plasma (NTP) application in agriculture is rapidly increasing. Many published articles and reviews in the literature are focus on the post-harvest use of plasma in agriculture. However, the pre-harvest application of plasma still in its early stage. Therefore, in this review, we covered the effect of NTP and plasma-treated water (PTW) on seed germination and growth enhancement. Further, we will discuss the change in biochemical analysis, e.g., the variation in phytohormones, phytochemicals, and antioxidant levels of seeds after treatment with NTP and PTW. Lastly, we will address the possibility of using plasma in the actual agriculture field and prospects of this technology.

    DOI: 10.3390/pr8081002

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  114. Non-thermal plasma-activated lactate solution kills U251SP glioblastoma cells in an innate reductive manner with altered metabolism Reviewed

    Ishikawa, K; Hosoi, Y; Tanaka, H; Jiang, L; Toyokuni, S; Nakamura, K; Kajiyama, H; Kikkawa, F; Mizuno, M; Hori, M

    ARCHIVES OF BIOCHEMISTRY AND BIOPHYSICS   Vol. 688   page: 108414   2020.7

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    Ringer's lactate solution irradiated by non-thermal plasma, comprised of radicals, electrons, and ions, is defined as plasma-activated lactate (PAL). PAL exhibited antitumor effects in glioblastoma U251SP cells, which we termed PAL-specific regulated cell death. In contrast to the oxidative stress condition typical of cells incubated in plasma-activated medium (PAM), U251SP cells treated with Ringer's lactate solution or PAL exhibited changes in intracellular metabolites that were reductive in the redox state, as measured by the ratio of oxidative/reductive glutathione concentrations. In the metabolomic profiles of PAL-treated cells, the generation of acetyl-CoA increased for lipid metabolism from alanine and asparagine. PAL thus induces regulated death of U251SP glioblastoma cells in more innate microenvironments than PAM.

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  115. <i>In situ</i> surface analysis of an ion-energy-dependent chlorination layer on GaN during cyclic etching using Ar<SUP>+</SUP> ions and Cl radicals Reviewed

    Hasegawa, M; Tsutsumi, T; Tanide, A; Nakamura, S; Kondo, H; Ishikawa, K; Sekine, M; Hori, M

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   Vol. 38 ( 4 ) page: 042602   2020.7

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    Gallium nitride (GaN) semiconductor devices must be fabricated using plasma etching with precise control of the etching depths and minimal plasma-induced damage on the atomic scale. A cyclic process comprising etchant adsorption and product removal may be suitable for this purpose but an understanding of the associated etching surface reactions is required. The present work examined the formation of a chlorinated layer based on Cl radical adsorption on a GaN surface in conjunction with Ar ion irradiation. This research employed beam experiments and in situ x-ray photoelectron spectroscopy. The results show that N atoms are preferentially desorbed during exposure to Ar ions to produce Ga-rich layers at depths of 0.8 and 1.1 nm at an Ar ion dosage on the order of 1016 cm-2 and ion energies of 116.0 and 212.6 eV, respectively. Subsequent exposure of the irradiated Ga-rich layer to Cl radicals removes some Ga atoms and produces a chlorinated layer over the GaN surface. This chlorinated layer has a thickness on the order of 1 nm following Cl radical dosages on the order of 1019 cm-2. This study of plasma-treated surfaces is expected to assist in developing means of controlling the etching depth during the atomic layer etching of GaN via Ar ion bombardment.

    DOI: 10.1116/6.0000124

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  116. Numerical simulations of stable, high-electron-density atmospheric pressure argon plasma under pin-to-plane electrode geometry: effects of applied voltage polarity Reviewed Open Access

    Sato, Y; Ishikawa, K; Tsutsumi, T; Ui, A; Akita, M; Oka, S; Hori, M

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 53 ( 26 ) page: 265204   2020.6

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    When applying high-voltage direct current to a pin-to-plane electrode geometry with a distance of 2 mm under atmospheric pressure in argon gas, electrical breakdown forms primary then secondary streamers. The polarity of the applied voltage affects this streamer-propagating phenomenon. Properties such as propagation speed, streamer head size, and plasma generation are parameterized at nanosecond scales by computational simulations of a self-consistent, multi-species, multierature plasma fluid modeling approach. For positive polarity on the pin electrode, streamer-head propagation speeds up and streamer head size increases with increasing applied voltages. However, local electron density at the head decreases. For negative polarity, corona-like discharges form around the pin electrode under low applied voltages, and diffusive steamers form under high applied voltages. Secondary streamers re-propagate from the pin after primary streamer propagation, forming a plasma with a high electron density of 1021 m-3 for the positive polarity. We show that low-voltage operations with positive polarity are useful for stable high-electron-density discharges under atmospheric pressure argon.

    DOI: 10.1088/1361-6463/ab7df0

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  117. In-plane modification of hexagonal boron nitride particles via plasma in solution Reviewed

    Ito, T; Goto, T; Inoue, K; Ishikawa, K; Kondo, H; Hori, M; Shimizu, Y; Hakuta, Y; Terashima, K

    APPLIED PHYSICS EXPRESS   Vol. 13 ( 6 ) page: 066001   2020.6

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    In-plane modification of hexagonal boron nitride (hBN) is demonstrated via plasma in solution without acid/base addition. Electron spin resonance spectroscopy clearly reveals an increase in nitrogen vacancies in the hBN plane. This could be a simple route to functionalizing the two-dimensional surface of hBN. Simultaneously, hydroxylation occurs, accompanied by an increase in the zeta potential.

    DOI: 10.35848/1882-0786/ab916c

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  118. Characterization of a microsecond pulsed non-equilibrium atmospheric pressure Ar plasma using laser scattering and optical emission spectroscopy Reviewed

    Jia, FD; Wu, Y; Min, Q; Su, MG; Takeda, K; Ishikawa, K; Kondo, H; Sekine, M; Hori, M; Zhong, ZP

    PLASMA SCIENCE & TECHNOLOGY   Vol. 22 ( 6 ) page: 065404   2020.6

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    A non-equilibrium atmospheric pressure argon (Ar) plasma excited by microsecond pulse is studied experimentally by laser scattering and optical emission spectroscopy (OES), and theoretically by collisional-radiative (CR) model. More specifically, the electron temperature and electron density of plasma are obtained directly by the laser Thomson scattering, the gas temperature is measured by laser Raman scattering, the optical emissions of excited Ar states of plasma are measured by OES. The laser scattering results show that the electron temperature is about 1 eV which is similar to that excited by 60 Hz AC power, but the gas temperature is as low as 300 K compared to about 700 K excited by 60 Hz AC power. It is shown that the microsecond pulsed power supply, rather than nanosecond ones, is short enough to reduce the gas temperature of atmospheric pressure plasma to near room temperature. The electron temperature and electron density are also obtained by CR model based on OES, and find that the intensities of the optical emission intensity lines of 727.41, 811.73, 841.08, 842.83, 852.44 and 912.86 nm of Ar can be used to characterize the behavior of electron density and electron temperature, it is very useful to quickly estimate the activity of the atmospheric pressure Ar plasma in many applications.

    DOI: 10.1088/2058-6272/ab84e2

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  119. Electronic properties and primary dissociation channels of fluoromethane compounds Reviewed

    Hayashi, T; Ishikawa, K; Sekine, M; Hori, M

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( SJ ) page: SJJE02   2020.6

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    We investigated fluoromethane compounds (CF4, CF3, CHF3, CH2F2, and CH3F) to examine their electronic properties and primary dissociation channels by using computational chemistry. For the electron attachment process, it was very important to represent the observed negative mass spectrum as a function of electron energy that calculation by the MP2 method for the negative ion and subsequent calculation by the EOMCCSD method were used to more accurately estimate the ground and the first excited states of the negative ion. In the evaluation of dissociation channels through the excitation process, the structure change of the excited fragment (from pyramidal to planar) was taken into account. Evaluation of Jahn-Teller distortion for the highly symmetrical CHF3 and CH3F was also very important to estimate the fragmentation process through the excitation. The calculated results after these treatments gave satisfactory representation of the experimental values. Moreover some predictions of experimentally unknown values are proposed.

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  120. Electron spin resonance as a tool to monitor the influence of novel processing technologies on food properties Reviewed International coauthorship

    Barba, FJ; Roohinejad, S; Ishikawa, K; Leong, SY; Bekhit, AEA; Saraiva, JA; Lebovka, N

    TRENDS IN FOOD SCIENCE & TECHNOLOGY   Vol. 100   page: 77 - 87   2020.6

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    Background: Nowadays, electron spin resonance (ESR) is widely used as a powerful, non-destructive and very sensitive technique for the detection of free radicals in food systems. It can be applied for the direct identification of highly reactive oxygen species, organic and inorganic paramagnetic species and screening of food for potential toxicity. Its applications cover investigating food oxidative stability and properties of irradiated foods including fruits and vegetables, meats and fishes, spices, cereal grains, and oil seeds. Scope and approach: This review aims at providing specialists in food science and industry with the fundamentals of ESR spectroscopy, typical radicals present in foods and their sources, ESR modalities, and detailed account for the use of the technology for evaluation of the physicochemical and nutritional properties of foods. Examples illustrating ESR applications for the evaluation of the effects of innovative and emerging technologies (ionizing radiation, high pressures, pulsed electric fields, cold plasma and ultrasonication) are discussed. Key findings and conclusions: ESR can be used for the identification/quantification of free radicals in foods, for spin-label oximetry, estimation of free radical scavenging, food stability, and chelating activity, with particular interest for food processed using innovative technologies, with the main advantages of its high sensitivity, specificity, and low amounts of sample needed and nowadays many types of ESR instruments are commercially available. However, due to the different nature of foods, the development of novel ESR techniques and methods of analysis specially designed to study foods is of great interest in the future.

    DOI: 10.1016/j.tifs.2020.03.032

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  121. Dry Process FOREWORD Reviewed

    Shirafuji, T; Kinoshita, K; Akatsuka, H; Eriguchi, K; Ichikawa, T; Ichiki, T; Ishijima, T; Ishikawa, K; Karahashi, K; Kurihara, K; Sekine, M

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 59 ( SJ )   2020.6

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    DOI: 10.35848/1347-4065/ab8acf

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  122. Synthesis of isolated carbon nanowalls via high-voltage nanosecond pulses in conjunction with CH<sub>4</sub>/H<sub>2</sub> plasma enhanced chemical vapor deposition Reviewed

    Ichikawa, T; Shimizu, N; Ishikawa, K; Hiramatsu, M; Hori, M

    CARBON   Vol. 161   page: 403 - 412   2020.5

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    Carbon nanowalls (CNWs) are vertically standing, interconnecting flake- or wall-like collections of graphene sheets. In the present work, this material was synthesized by applying precisely controlled high-voltage nanosecond pulses to a substrate using an inductor energy storage circuit in a radical-injection plasma-enhanced chemical vapor deposition system, employing a CH4/H2 plasma. The resulting interconnected networks had a low density of CNWs with large average wall-to-wall distances. During the application of short-period pulses, the entire substrate surface was uniformly activated, thus enhancing the adsorption of carbon precursors and preventing CNW nucleation. As a result, an amorphous carbon film covered the surface of the substrate and a low CNW density was obtained with average wall-to-wall distances greater than 700 nm. On the basis of these results, the growth mechanism of CNWs was modeled.

    DOI: 10.1016/j.carbon.2020.01.064

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  123. Gas-phase and film analysis of hydrogenated amorphous carbon films: Effect of ion bombardment energy flux on sp<SUP>2</SUP> carbon structures Reviewed

    Sugiura, H; Ohashi, Y; Ishikawa, K; Kondo, H; Kato, T; Kaneko, T; Takeda, K; Tsutsumi, T; Hayashi, T; Sekine, M; Hori, M

    DIAMOND AND RELATED MATERIALS   Vol. 104   2020.4

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    Hydrogenated amorphous carbon (a-C:H) films comprise nanoclustering graphites (nc-G), fused aromatic rings (nR), and olefinic chain clusters (nC) of sp2-bonded carbons in an sp3 matrix. In this study, the sp2 composition of the nc-G, nR and nC in a-C:H films is found to be determined by the ion bombardment energy flux (ΓEi), which can be estimated as the product of ion bombardment energy and ion flux onto the deposited surface, in plasma-enhanced chemical vapor deposition using a plasma mixture of H2 and CH4 gases with the H radical injection method. The sp2 composition is analyzed using Raman spectroscopy and near-edge X-ray absorption structure spectroscopy. a-C:H becomes increasingly graphitized with increasing ΓEi. The precise control of the sp2 C structure composition can be achieved by controlling the very-high-frequency input power and radio frequency input bias power via the ion flux and ion bombardment energy.

    DOI: 10.1016/j.diamond.2019.107651

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  124. In-Liquid Plasma Synthesis of Nanographene with a Mixture of Methanol and 1-Butanol Reviewed

    Ando, A; Ishikawa, K; Takeda, K; Ohta, T; Ito, M; Hiramatsu, M; Kondo, H; Sekine, M; Hori, M

    CHEMNANOMAT   Vol. 6 ( 4 ) page: 604 - 609   2020.4

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    Nanometer-size graphene sheets (nanographene) were synthesized by the in-liquid plasma method employing a mixture of alcohols. Pure methanol in-liquid plasma was found to not synthesize any nanographene. Pure ethanol synthesized nanographene with high crystallinity. Highly crystalline nanographene with a narrow full width-half maximum of the Raman scattering G-band (FWHMG) was obtained by mixing 1-butanol with methanol. This is due to the formation of carbon ring structures being inhibited by the addition of methanol. The ratio of added methanol determined the nanographene crystallinity and yield under a trade-off relationship, allowing the crystallinity and nanographene yield to be controlled by controlling the ratio. Gas chromatography-mass spectrometric analysis of by-products in the liquids’ supernatant showed that the crystallinity of the synthesized nanographene correlated with the ratio of carbon over oxygen of the alcohol precursors (C/O), i. e., the amount of hydroxyl groups in the liquids, and hence controlling the C/O ratio can be used to control the graphene crystallinity in the in-liquid plasma synthesis.

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  125. Interaction of oxygen with polystyrene and polyethylene polymer films: A mechanistic study Reviewed International coauthorship

    Fukunaga, Y; Longo, RC; Ventzek, PLG; Lane, B; Ranjan, A; Hwang, GS; Hartmann, G; Tsutsumi, T; Ishikawa, K; Kondo, H; Sekine, M; Hori, M

    JOURNAL OF APPLIED PHYSICS   Vol. 127 ( 2 )   2020.1

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    In this work, first principles calculations combined with advanced surface diagnostics are used to unravel the mechanisms of plasma oxygen interaction with organic films of interest for advanced patterning in semiconductor device manufacturing. Results from a combination of x-ray photoelectron spectroscopy (XPS) diagnosed oxygen plasma exposed polystyrene films and first principles modeling of organic films (polystyrene, polyethylene, and derivatives) provide insights into how organic films are oxidized by oxygen atoms. XPS measurements show the rapid formation of C-O structures and their saturation after oxygen exposure on both pristine and argon bombarded polystyrene samples. Quantum mechanics calculations confirm that C-OH formation can be immediate without recourse to previously formed dangling bonds. Multiple oxygen impacts are required for scission of pristine ethylene carbon strands. Therefore, ethylene films can be converted to polyols that are stable, whereas more likely strands are broken before polyol formation through the formation of water and C=O. On the contrary, intermediate compounds with adjacent C=O bonds are not likely to form stable structures. The combination of XPS measurements and modeling implies that the oxidation of polystyrene and polyethylene is self-limiting on both hydrogen saturated and dehydrogenated (after argon ion plasma bombardment) surfaces.

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  126. Inactivation mechanism of fungal spores through oxygen radicals in atmospheric-pressure plasma Reviewed

    Ito M., Hashizume H., Oh J.S., Ishikawa K., Ohta T., Hori M.

    Japanese Journal of Applied Physics   Vol. 60 ( 1 ) page: 010503   2020

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    A brief history of the development of our plasma technology for the disinfection of agricultural harvests is presented in this review. We focused on the influence of reactive oxygen species (ROS), e.g. ground-state oxygen atoms [O(3P j )], excited-state oxygen molecules [O2(1Δg)], and ozone (O3), generated from atmospheric-pressure plasmas on the inactivation of fungal spores under dry conditions. For elucidating the inactivation mechanisms, it is essential to reveal the key ROS. Using some powerful tools, we revealed that the dose of O(3P j ) strongly correlates with the inactivation of fungal spores when compared to those of another ROS, such as O2(1Δg) and O3. The balance of antioxidants in the spores is possibly modulated by O(3P j ), leading to oxidation of organelles in spores. Herein, we introduce and discuss how O(3P j ) contributes to the inactivation of fungal spores associated with in situ diagnostics of plasma generated ROS and in situ intracellular observations of a few fungal spore species.

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  127. Leukocyte depletion and size-based enrichment of circulating tumor cells with pressure-sensing microfiltration system Reviewed

    Kuboyama D., Onoshima D., Kihara N., Tanaka H., Hase T., Yukawa H., Ishikawa K., Odaka H., Hasegawa Y., Hori M., Baba Y.

    21st International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2017     page: 882 - 883   2020

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    We present a study of blood microfiltration system towards optimal approach of non-invasive liquid biopsy for cancer detection by circulating tumor cells (CTCs). Filtration behavior of a microfilter was experimentally analyzed for tumor cell isolation from leukocytes in whole blood. This approach achieved an average of >96% recovery of spiked tumor cells and >99% total leukocytes depletion.

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  128. Cell deposition and isolation with micropipette control over liquid interface motion in microfluidic channel Reviewed

    Onoshima D., Yukawa H., Hattori Y., Ishikawa K., Hori M., Baba Y.

    21st International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2017     page: 679 - 680   2020

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    We developed a microfluidic chip for depositing single cells in microwells using simple micropipette operation. Cells were delivered to microwells by the meniscus motion of liquid interface. The residue deposits of cells were redistributed with air injection, and the isolated single cells were stored in microwells. Different microwell sizes and depths were studied to evaluate the trapping possibility of cells. Medium replacement and cell viability staining with the isolated single cells were achieved in microwells.

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  129. Etching characteristics of PECVD-prepared SiN films with CF<sub>4</sub>/D<sub>2</sub> and CF<sub>4</sub>/H<sub>2</sub> plasmas at different temperatures Reviewed

    Hsiao, SN; Nguyen, TTN; Tsutsumi, T; Ishikawa, K; Sekine, M; Hori, M

    2020 INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING (ISSM)   Vol. 2020-December   2020

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    Language:English   Publishing type:Research paper (international conference proceedings)   Publisher:IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings  

    The dependences of plasmas (CF4/D2 and CF4/H2) on etch rates of the PECVD SiN films at different substrate temperatures were investigated. The CF4/D2 plasma exhibited higher etch rates than that for the CF4/D2 plasma at room temperature and higher. The optical emission spectra showed that the CF polymerization, F and Balmer emissions were stronger in the CF4/D2 plasma, by comparing with the CF4/H2 plasma. A thinner fluorocarbon thickness with a lower F/C ratio was found in the sample proceeded by the CF4/H2 plasma. The fluorocarbon thickness and gas phase concentration were not responsible for the increase of etch rate in the CF4/D2 plasma. The abstraction of H inside the SiN films by deuterium and hydrogen dissociation were considered to be important for the etching of the Si-H bond rich SiN films.

    DOI: 10.1109/ISSM51728.2020.9377537

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  130. Rapid thermal-cyclic atomic-layer etching of titanium nitride in CHF<sub>3</sub>/O<sub>2</sub> downstream plasma Reviewed

    Shinoda, K; Miyoshi, N; Kobayashi, H; Izawa, M; Ishikawa, K; Hori, M

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 52 ( 47 )   2019.11

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    Isotropic atomic-layer etching (ALE) of TiN-by using a plasma-assisted thermal-cyclic process with a 300-mm tool-was demonstrated. The process consists of exposure to a downstream CHF3/O2 plasma (for surface modification) followed by infrared irradiation for thermal desorption of the modified surface. Etched amount of TiN per cycle saturated at around 0.6 nm/cycle with respect to both radical-exposure time and infrared-irradiation time. To examine the reaction mechanism of the cyclic etching, the surfaces of TiN samples after CHF3/O2 plasma exposure were analyzed by in situ X-ray photoelectron spectroscopy (XPS). Self-limiting formation of the surface-modified layer, which was tentatively identified as an ammonium salt such as (NH4)xTiFy, was observed after radical exposure. It was confirmed by in situ XPS that the surface-modified layer was removed after thermal annealing at 110 °C. Isotropic ALE of TiN was thus demonstrated by using formation and desorption of ammonium salt in CHF3/O2 downstream plasma, which was also used for isotropic ALE of Si3N4.

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  131. Simulation-aided design of very-high-frequency excited nitrogen plasma confinement using a shield plate Reviewed

    Isobe, Y; Sakai, T; Suguro, K; Miyashita, N; Kondo, H; Ishikawa, K; Wilson, AF; Shimizu, N; Oda, O; Sekine, M; Hori, M

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 37 ( 6 )   2019.11

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    Nitrogen atoms are versatile for nitridation applications and do not lead to plasma-induced damage. Large-sized wafer processing demands a uniform supply of nitrogen atoms produced in a high-density very-high-frequency excited plasma of N2 without ammonia. The confinement of plasma through the use of a plasma shield plate (PSP) allows the samples to be separated in a downstream chamber. Generation and transport of N atoms were computationally simulated, and the PSP designs were implemented by PSP parameterization. The supply of high-density N radicals to the sample stage was optimally designed with sufficiently small holes and thin PSP to satisfy an aspect ratio of thickness-to-hole-diameter of less than 2.5.

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  132. Oxidative stress-dependent and -independent death of glioblastoma cells induced by non-thermal plasma-exposed solutions Reviewed Open Access

    Tanaka Hiromasa, Mizuno Masaaki, Katsumata Yuko, Ishikawa Kenji, Kondo Hiroki, Hashizume Hiroshi, Okazaki Yasumasa, Toyokuni Shinya, Nakamura Kae, Yoshikawa Nobuhisa, Kajiyama Hiroaki, Kikkawa Fumitaka, Hori Masaru

    SCIENTIFIC REPORTS   Vol. 9 ( 1 ) page: 13657   2019.9

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    DOI: 10.1038/s41598-019-50136-w

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  133. Atmospheric Pressure Plasma-Treated Carbon Nanowalls' Surface-Assisted Laser Desorption/Ionization Time-of-Flight Mass Spectrometry (CNW-SALDI-MS) Reviewed

    Ohta, T; Ito, H; Ishikawa, K; Kondo, H; Hiramatsu, M; Hori, M

    C-JOURNAL OF CARBON RESEARCH   Vol. 5 ( 3 )   2019.9

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    DOI: 10.3390/c5030040

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  134. Self-limiting reactions of ammonium salt in CHF<sub>3</sub>/O<sub>2</sub> downstream plasma for thermal-cyclic atomic layer etching of silicon nitride Reviewed

    Shinoda, K; Miyoshi, N; Kobayashi, H; Izawa, M; Saeki, T; Ishikawa, K; Hori, M

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   Vol. 37 ( 5 )   2019.9

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    Self-limiting reactions of ammonium salt in CHF3/O2 downstream plasma were demonstrated for thermal-cyclic atomic layer etching (ALE) of Si3N4. In situ x-ray photoelectron spectroscopy analysis shows that an (NH4)2SiF6 by-product of the same thickness forms on Si3N4 in a wide gas composition range. The (NH4)2SiF6 layer prevents etching of Si3N4 during continuous plasma exposure in that wide range. The (NH4)2SiF6 layer was sublimated by heating, which was consistent with the result of the thermodynamic calculation. The reactions of the (NH4)2SiF6 layer in CHF3/O2 downstream plasma are used for thermal-cyclic ALE of Si3N4 with a newly developed 300-mm tool equipped with an in situ ellipsometer. It was confirmed that the amount etched per cycle saturates with respect to both plasma exposure time and infrared irradiation time.

    DOI: 10.1116/1.5111663

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  135. Review of methods for the mitigation of plasma-induced damage to low-dielectric-constant interlayer dielectrics used for semiconductor logic device interconnects Reviewed

    Miyajima, H; Ishikawa, K; Sekine, M; Hori, M

    PLASMA PROCESSES AND POLYMERS   Vol. 16 ( 9 )   2019.9

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    The developments in advanced interconnect technology for semiconductor logic devices for the mitigation of plasma-induced damage to low-dielectric-constant (low-k) materials, including fluorosilicate glass and carbon-doped silicon oxide is reviewed. The chemical bond structures of low-k materials are summarized to help mitigate the k value degradation caused by moisture uptake after plasma processes. Damage suppression is accomplished by integrating deposition chemistries, pattern etch transfer, and post-etch cleaning technologies. On the basis of analyses results, a discussion on the bond engineering of low-k materials and their degradation during plasma processing is given. Challenges facing low-k interconnect technology are also addressed.

    DOI: 10.1002/ppap.201900039

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  136. Simultaneous achievement of antimicrobial property and plant growth promotion using plasma-activated benzoic compound solution Reviewed

    Iwata, N; Gamaleev, V; Hashizume, H; Oh, JS; Ohta, T; Ishikawa, K; Hori, M; Ito, M

    PLASMA PROCESSES AND POLYMERS   Vol. 16 ( 8 )   2019.8

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    This study assesses a potential use of the recently developed nonthermal atmospheric pressure plasma technology in hydroponic plant cultivation. Two types of plasma-activated liquid solutions were compared, namely, l-Phenylalanine (l-Phe), which had a benzene ring structure, and l-Alanine (l-Ala), which did not have a benzene ring structure. Antimicrobial property and plant growth enhancement were simultaneously obtained when plasma-activated l-Phe was used. We found that the benzene ring structure in solution contributed to antimicrobial property. Further, colony forming unit assay indicated that 99% of Escherichia coli (E. coli) were eliminated after 24-h incubation and radish sprout growth increased by about 40% after 2 days of cultivation.

    DOI: 10.1002/ppap.201900023

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  137. Gene Expression of Osteoblast-like Cells on Carbon-Nanowall as Scaffolds during Incubation with Electrical Stimulation Reviewed

    Ichikawa T., Kondo H., Ishikawa K., Tsutsumi T., Tanaka H., Sekine M., Hori M.

    ACS Applied Bio Materials   Vol. 2 ( 7 ) page: 2698 - 2702   2019.7

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    Nanostructured cell-culture scaffolds of carbon nanowalls (CNWs) were prepared by changing average wall-to-wall distances either 132 or 220 nm. Osteoblast-like cells (Saos-2) proliferated during 4 day incubation on the wider (220 nm) CNW scaffolds in the presence of electrical stimulation (ES). Differentiation gene expression levels of Runt-related transcription factor 2 (Runx2) and osteocalcin (OC) were suppressed after 10 day incubation, which indicated that the average wall-to-wall distances of the CNW scaffolds affect suppression of Runx2 and OC gene expression. This technique holds promise for controlling the differentiation of osteoblast-like cells.

    DOI: 10.1021/acsabm.9b00178

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  138. Rethinking surface reactions in nanoscale dry processes toward atomic precision and beyond: a physics and chemistry perspective Reviewed International coauthorship Open Access

    Ishikawa Kenji, Ishijima Tatsuo, Shirafuji Tatsuru, Armini Silvia, Despiau-Pujo Emilie, Gottscho Richard A., Kanarik Keren J., Leusink Gert J., Marchack Nathan, Murayama Takahide, Morikawa Yasuhiro, Oehrlein Gottlieb S., Park Sangwuk, Hayashi Hisataka, Kinoshita Keizo

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SE )   2019.6

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    DOI: 10.7567/1347-4065/ab163e

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  139. Plasma-activated solution alters the morphological dynamics of supported lipid bilayers observed by high-speed atomic force microscopy Reviewed

    Yamaoka Sotaro, Kondo Hiroki, Hashizume Hiroshi, Ishikawa Kenji, Tanaka Hiromasa, Hori Masaru

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 6 )   2019.6

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    DOI: 10.7567/1882-0786/ab1a58

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  140. Progress and perspectives in dry processes for emerging multidisciplinary applications: how can we improve our use of dry processes? Reviewed Open Access

    Iwase Taku, Kamaji Yoshito, Kang Song Yun, Koga Kazunori, Kuboi Nobuyuki, Nakamura Moritaka, Negishi Nobuyuki, Nozaki Tomohiro, Nunomura Shota, Ogawa Daisuke, Omura Mitsuhiro, Shimizu Tetsuji, Shinoda Kazunori, Sonoda Yasushi, Suzuki Haruka, Takahashi Kazuo, Tsutsumi Takayoshi, Yoshikawa Kenichi, Ishijima Tatsuo, Ishikawa Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SE )   2019.6

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    DOI: 10.7567/1347-4065/ab163a

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  141. Progress and perspectives in dry processes for leading-edge manufacturing of devices: toward intelligent processes and virtual product development Reviewed

    Iwase Taku, Kamaji Yoshito, Kang Song Yun, Koga Kazunori, Kuboi Nobuyuki, Nakamura Moritaka, Negishi Nobuyuki, Nozaki Tomohiro, Nunomura Shota, Ogawa Daisuke, Omura Mitsuhiro, Shimizu Tetsuji, Shinoda Kazunori, Sonoda Yasushi, Suzuki Haruka, Takahashi Kazuo, Tsutsumi Takayoshi, Yoshikawa Kenichi, Ishijima Tatsuo, Ishikawa Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SE )   2019.6

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    DOI: 10.7567/1347-4065/ab163b

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  142. Progress and perspectives in dry processes for nanoscale feature fabrication: fine pattern transfer and high-aspect-ratio feature formation Reviewed

    Iwase Taku, Kamaji Yoshito, Kang Song Yun, Koga Kazunori, Kuboi Nobuyuki, Nakamura Moritaka, Negishi Nobuyuki, Nozaki Tomohiro, Nunomura Shota, Ogawa Daisuke, Omura Mitsuhiro, Shimizu Tetsuji, Shinoda Kazunori, Sonoda Yasushi, Suzuki Haruka, Takahashi Kazuo, Tsutsumi Takayoshi, Yoshikawa Kenichi, Ishijima Tatsuo, Ishikawa Kenji

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SE )   2019.6

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    DOI: 10.7567/1347-4065/ab1638

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  143. Electronic properties and primarily dissociation channels of fluoroethane compounds Reviewed

    Hayashi, T; Ishikawa, K; Sekine, M; Hori, M

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SE )   2019.6

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    Electronic properties of fluoroethane compounds except C2H5F, C2H4F2, CH3CF3, C2H2F4, and C2F6 have not been reported. On the other hands, the physicochemical properties were reported for the usage as the alternative refrigerants. Dissociation channels in the process plasma for fluoroethane compounds were not fully discussed except 1,1,1,2-C2H2F4. Therefore we have investigated the electronic properties and primarily dissociation channels of fluoroethane compounds in the process plasma in semiconductor manufacturing, using computational chemistry. Positive and negative ionized states were investigated by density functional method and the excited states were investigated by EOMCCSD/aug-cc-pVDZ and TD-SCF CAM-B3LYP/aug-cc-pVDZ. It was generally shown through these investigations that C-C bond scission occurred by excitation and ionization and C-F bond scission occurred by excitation and electron attachment.

    DOI: 10.7567/1347-4065/ab09ca

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  144. Polyethylene terephthalate (PET) surface modification by VUV and neutral active species in remote oxygen or hydrogen plasmas Reviewed International coauthorship

    Zhang Yan, Ishikawa Kenji, Mozetic Miran, Tsutsumi Takayoshi, Kondo Hiroki, Sekine Makoto, Hori Masaru

    PLASMA PROCESSES AND POLYMERS   Vol. 16 ( 6 )   2019.6

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    DOI: 10.1002/ppap.201800175

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  145. Laser-drilling formation of through-glass-via (TGV) on polymer-laminated glass Reviewed

    Sato, Y; Imajyo, N; Ishikawa, K; Tummala, R; Hori, M

    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS   Vol. 30 ( 11 ) page: 10183 - 10190   2019.6

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    A three-dimensional (3D) glass integrated passive device (IPD) is an evolutionally advanced configuration to dramatically reduce the electronics form factor and manufacturing cost of current IPDs by introducing ultra-thin glass with through-glass-vias (TGVs). A defect-free TGV formation technology in polymer-laminated glass substrates is required to realize a highly reliable 3D glass IPD. This paper discusses mechanisms of each defect formation in the use of several types of lasers to explore suitable technology for defect-free drilling in polymer-laminated glass.

    DOI: 10.1007/s10854-019-01354-5

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  146. Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition Reviewed

    Isobe, Y; Sakai, T; Sugiyama, N; Mizushima, I; Suguro, K; Miyashita, N; Lu, Y; Wilson, AF; Kumar, DA; Ikarashi, N; Kondo, H; Ishikawa, K; Shimizu, N; Oda, O; Sekine, M; Hori, M

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 37 ( 3 )   2019.5

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    Epitaxial growth of GaN films at a low temperature of 800 °C was studied in radical-enhanced metal-organic chemical vapor deposition, focusing on the discharge region of the plasma of a mixture of N2 and H2 gases. The effect of plasma confinement on the growth is crucial for realizing high crystal quality of grown GaN films, owing to the suppression of plasma-induced damage and decomposition of gallium precursors in the gaseous phase. By confined plasma in the discharge region using the plasma shield plates made of metal with multiple small holes effectively, GaN with a relatively flat surface was grown under conditions of higher V/III ratios. Epitaxial growth of GaN films was achieved by modifying the plate design and controlling the high V/III ratio using both the plasma-excitation power and the Ga precursor flow rate.

    DOI: 10.1116/1.5083970

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  147. Erratum to “Chemical bonding structure in porous SiOC films (k &lt; 2.4) with high plasma-induced damage resistance” (Micro and Nano Engineering (2019) 3 (1–6), (S2590007219300097), (10.1016/j.mne.2019.02.005)) Reviewed Open Access

    Miyajima H., Masuda H., Watanabe K., Ishikawa K., Sekine M., Hori M.

    Micro and Nano Engineering   Vol. 3   page: 92 - 92   2019.5

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    The publisher regrets that we missed to publish the conflict of interest statement in the original article. The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper. The publisher would like to apologise for any inconvenience caused.

    DOI: 10.1016/j.mne.2019.05.004

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  148. Chemical bonding structure in porous SiOC films (k < 2.4) with high plasma-induced damage resistance Reviewed Open Access

    Miyajima H., Masuda H., Watanabe K., Ishikawa K., Sekine M., Hori M.

    Micro and Nano Engineering   Vol. 3   page: 1 - 6   2019.5

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    The chemical bonding structure of porous low-k carbon-doped silicon oxide (SiOC) films (k < 2.4) was engineered using plasma-enhanced chemical vapor deposition and electron-beam curing. The high carbon concentration in the SiOC films with di-methyl bonds ([dbnd]Si(–]CH3)2) is crucial for resistance to plasma-induced damage (PID) and prevention of moisture uptake after the plasma treatment. The mix of di-methyl bonds is believed to be the key to protecting the films from PID because the films retain their hydrophobic characteristics even after plasma treatment. Thus, control of the ratio of di-methyl bonds to mono-methyl bonds ([tbnd]Si–]CH3) in the as-deposited SiOC film is necessary. Selection of trimethyl silane as a precursor for film matrix formation resulted in excellent control of this ratio to obtain highly reliable low-k/Cu interconnects for high-performance logic devices.

    DOI: 10.1016/j.mne.2019.02.005

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  149. Facile synthesis of SnO2-graphene composites employing nonthermal plasma and SnO2 nanoparticles-dispersed ethanol Reviewed

    Borude Ranjit R., Sugiura Hirotsugu, Ishikawa Kenji, Tsutsumi Takayoshi, Kondo Hiroki, Hori Masaru

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 52 ( 17 )   2019.4

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    DOI: 10.1088/1361-6463/ab03c4

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  150. Systematic diagnostics of the electrical, optical, and physicochemical characteristics of low-temperature atmospheric-pressure helium plasma sources Reviewed

    Takeda Keigo, Yamada Hiromasa, Ishikawa Kenji, Sakakita Hajime, Kim Jaeho, Ueda Masashi, Ikeda Jun-ichiro, Akimoto Yoshihiro, Kataoka Yosky, Yokoyama Naoaki, Ikehara Yuzuru, Hori Masaru

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 52 ( 16 )   2019.4

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    DOI: 10.1088/1361-6463/aaff44

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  151. A 65-nm CMOS Fully Integrated Analysis Platform Using an On-Chip Vector Network Analyzer and a Transmission-Line-Based Detection Window for Analyzing Circulating Tumor Cell and Exosome Reviewed Open Access

    Niitsu Kiichi, Nakanishi Taiki, Murakami Shunya, Matsunaga Maya, Kobayashi Atsuki, Karim Nissar Mohammad, Ito Jun, Ozawa Naoya, Hase Tetsunari, Tanaka Hiromasa, Sato Mitsuo, Kondo Hiroki, Ishikawa Kenji, Odaka Hidefumi, Hasegawa Yoshinori, Hori Masaru, Nakazato Kazuo

    IEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMS   Vol. 13 ( 2 ) page: 470 - 479   2019.4

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    DOI: 10.1109/TBCAS.2018.2882472

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  152. Effects of 3D structure on electrochemical oxygen reduction characteristics of Pt- nanoparticle-supported carbon nanowalls Reviewed

    Imai Shun, Naito Kenichi, Kondo Hiroki, Cho Hyung Jun, Ishikawa Kenji, Tsutsumi Takayoshi, Sekine Makoto, Hiramatsu Mineo, Hori Masaru

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 52 ( 10 )   2019.3

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    DOI: 10.1088/1361-6463/aaf8e0

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  153. Control of sp<SUP>2</SUP>-C cluster incorporation of amorphous carbon films grown by H-radical-injection CH<sub>4</sub>/H<sub>2</sub> plasma-enhanced chemical vapor deposition Reviewed

    Sugiura, H; Jia, LY; Ohashi, Y; Kondo, H; Ishikawa, K; Tsutsumi, T; Hayashi, T; Takeda, K; Sekine, M; Hori, M

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 3 )   2019.3

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    Amorphous carbon (a-C) thin films were deposited under the control of C2 radical density using radical-injection plasma-enhanced chemical vapor deposition (RI-PECVD) with CH4/H2 plasma. By actinometric monitoring of C2 emission intensities, the plasma parameters were precisely controlled by changing in CH4-containing plasma excitation power independent of H2 plasma excitation. The control of the incorporation of sp2-C clusters in the a-C films during the a-C film depositions is demonstrated by tailoring Raman positions vs. full widths at half maxima for the G band around 1580 cm-1 to the RI-PECVD parameters.

    DOI: 10.7567/1347-4065/aafd49

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  154. Effects of BCl3 addition to Cl2 gas on etching characteristics of GaN at high temperature Reviewed

    Tanide Atsushi, Nakamura Shohei, Horikoshi Akira, Takatsuji Shigeru, Kohno Motohiro, Kinose Kazuo, Nadahara Soichi, Ishikawa Kenji, Sekine Makoto, Hori Masaru

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   Vol. 37 ( 2 )   2019.3

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    DOI: 10.1116/1.5082345

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  155. Effects of Ion Bombardment Energy Flux on Chemical Compositions and Structures of Hydrogenated Amorphous Carbon Films Grown by a Radical-Injection Plasma-Enhanced Chemical Vapor Deposition Reviewed

    Sugiura, H; Kondo, H; Tsutsumi, T; Ishikawa, K; Hori, M

    C-JOURNAL OF CARBON RESEARCH   Vol. 5 ( 1 )   2019.3

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    DOI: 10.3390/c5010008

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  156. Electrochemical Reaction in Hydrogen Peroxide and Structural Change of Platinum Nanoparticle-Supported Carbon Nanowalls Grown Using Plasma-Enhanced Chemical Vapor Deposition Reviewed

    Tomatsu, M; Hiramatsu, M; Kondo, H; Ishikawa, K; Tsutsumi, T; Sekine, M; Hori, M

    C-JOURNAL OF CARBON RESEARCH   Vol. 5 ( 1 )   2019.3

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    DOI: 10.3390/c5010007

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  157. Non-thermal plasma-activated medium modified metabolomic profiles in the glycolysis of U251SP glioblastoma Reviewed

    Kurake Naoyuki, Ishikawa Kenji, Tanaka Hiromasa, Hashizume Hiroshi, Nakamura Kae, Kajiyama Hiroaki, Toyokuni Shinya, Kikkawa Fumitaka, Mizuno Masaaki, Hori Masaru

    ARCHIVES OF BIOCHEMISTRY AND BIOPHYSICS   Vol. 662   page: 83 - 92   2019.2

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    DOI: 10.1016/j.abb.2018.12.001

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  158. Remotely floating wire-assisted generation of high-density atmospheric pressure plasma and SF6-added plasma etching of quartz glass Reviewed

    Thi-Thuy-Nga Nguyen, Sasaki Minoru, Odaka Hidefumi, Tsutsumi Takayoshi, Ishikawa Kenji, Hori Masaru

    JOURNAL OF APPLIED PHYSICS   Vol. 125 ( 6 )   2019.2

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    DOI: 10.1063/1.5081875

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  159. Liquid dynamics in response to an impinging low-temperature plasma jet Reviewed International coauthorship

    Brubaker T. R., Ishikawa K., Kondo H., Tsutsumi T., Hashizume H., Tanaka H., Knecht S. D., Bilen S. G., Hori M.

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 52 ( 7 )   2019.2

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    DOI: 10.1088/1361-6463/aaf460

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  160. Effect of electrical stimulation on proliferation and bone-formation by osteoblast-like cells cultured on carbon nanowalls scaffolds Reviewed

    Ichikawa Tomonori, Tanaka Suiki, Kondo Hiroki, Ishikawa Kenji, Tsutsumi Takayoshi, Sekine Makoto, Hori Masaru

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 2 )   2019.2

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    DOI: 10.7567/1882-0786/aaf469

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  161. Adhesion enhancement and amine reduction using film redeposited at the interface of a stack of plasma-enhanced CVD dielectrics for Cu/low-k interconnects Reviewed

    Miyajima Hideshi, Watanabe Kei, Ishikawa Kenji, Sekine Makoto, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 2 )   2019.2

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  162. Narrow free-standing features fabricated by top-down self-limited trimming of organic materials using precisely temperature-controlled plasma etching system Reviewed

    Fukunaga Yusuke, Tsutsumi Takayoshi, Kondo Hiroki, Ishikawa Kenji, Sekine Makoto, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( 2 )   2019.2

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    DOI: 10.7567/1347-4065/aaf92a

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  163. Hetero-epitaxial growth of a GaN film by the combination of magnetron sputtering with Ar/Cl-2 gas mixtures and a separate supply of nitrogen precursors from a high density radical source Reviewed

    Tanide Atsushi, Nakamura Shohei, Horikoshi Akira, Takatsuji Shigeru, Kohno Motohiro, Kinose Kazuo, Nadahara Soichi, Nishikawa Masazumi, Ebe Akinori, Ishikawa Kenji, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SA )   2019.2

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    DOI: 10.7567/1347-4065/aaeb39

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  164. Modifications of surface and bulk properties of magnetron-sputtered carbon films employing a post-treatment of atmospheric pressure plasma Reviewed

    Borude Ranjit R., Sugiura Hirotsugu, Ishikawa Kenji, Tsutsumi Takayoshi, Kondo Hiroki, Han Jeon Geon, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 58 ( SA )   2019.2

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    DOI: 10.7567/1347-4065/aaec87

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  165. Single-Step, Low-Temperature Simultaneous Formations and in Situ Binding of Tin Oxide Nanoparticles to Graphene Nanosheets by In-Liquid Plasma for Potential Applications in Gas Sensing and Lithium-Ion Batteries Reviewed

    Borude, RR; Sugiura, H; Ishikawa, K; Tsutsumi, T; Kondo, H; Ikarashi, N; Hori, M

    ACS APPLIED NANO MATERIALS   Vol. 2 ( 2 ) page: 649 - 654   2019.2

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    The in situ binding of tin oxide (SnO2) nanoparticles (SNp) and graphene nanosheets (GNs) that synthesized simultaneously in single-step atmospheric-pressure processing was achieved at a low temperature by employing in-liquid plasma in a solution of tin chloride (SnCl2·2H2O) in ethanol as the only precursor. Transmission electron microscopy, Raman analysis, and X-ray diffraction revealed the composite (SNp/GNs) synthesis with SNp of sizes 2-3 nm, which were distributed uniformly and attached to both sides of the GNs. The SNp/GNs composite synthesis was provided by the simple, low-cost, single-processing method of the in-liquid plasma for future gas-sensing and lithium-ion battery applications.

    DOI: 10.1021/acsanm.8b02201

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  166. Pt nanoparticle-supported carbon nanowalls electrode with improved durability for fuel cell applications using C2F6/H-2 plasma-enhanced chemical vapor deposition Reviewed

    Imai Shun, Kondo Hiroki, Hyungjun Cho, Ishikawa Kenji, Tsutsumi Takayoshi, Sekine Makoto, Hiramatsu Mineo, Hori Masaru

    APPLIED PHYSICS EXPRESS   Vol. 12 ( 1 )   2019.1

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  167. Batch Fabrication of Nano-Gap Electrode Array Using Photo-Patterning and Resist UV-Curing

    Nguyen Hai Minh, Kumeuchi Mako, Kumagai Shinya, Ishikawa Kenji, Hori Masaru, Sasaki Minoru

    IEEJ Transactions on Sensors and Micromachines   Vol. 139 ( 1 ) page: 27 - 28   2019.1

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    <p>A nano-gap electrode array is batch-fabricated based on photolithography. A high resolution is obtained by using an over-hanging resist cover on the under-etched metal film. The process includes two-time mask-patterning. The first photoresist is UV-cured, allowing second patterning without degrading the first pattern. A nano-gap width of 237±63 nm is obtained from a 704-electrode array with an yield of 97%.</p>

    DOI: 10.1541/ieejsmas.139.27

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  168. Molecular mechanisms of non-thermal plasmainduced effects in cancer cells Reviewed

    Tanaka Hiromasa, Mizuno Masaaki, Ishikawa Kenji, Toyokuni Shinya, Kajiyama Hiroaki, Kikkawa Fumitaka, Hori Masaru

    BIOLOGICAL CHEMISTRY   Vol. 400 ( 1 ) page: 87 - 91   2019.1

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    DOI: 10.1515/hsz-2018-0199

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  169. Single-cell microscopic raman spectroscopy for rapid microbial detection Reviewed

    Onoshima D., Uchida K., Yukawa H., Ishikawa K., Hori M., Baba Y.

    23rd International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2019     page: 1374 - 1375   2019

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    We present a study of microbial Raman spectroscopy towards optimal approach of rapid microbiological methods (RMMs). Raman spectra of single microorganism cells were measured and analyzed by data clustering to identify the microbial species without culturing for colony formation.

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  170. Effect of N-2/H-2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) Reviewed Open Access

    Amalraj Frank Wilson, Dhasiyan Arun Kumar, Lu Yi, Shimizu Naohiro, Oda Osamu, Ishikawa Kenji, Kondo Hiroki, Sekine Makoto, Ikarashi Nobuyuki, Hori Masaru

    AIP ADVANCES   Vol. 8 ( 11 )   2018.11

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    DOI: 10.1063/1.5050819

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  171. Reaction mechanisms between chlorine plasma and a spin-on-type polymer mask for high-temperature plasma etching Reviewed

    Zhang Yan, Imamura Masato, Ishikawa Kenji, Tsutsumi Takayoshi, Kondo Hiroki, Sekine Makoto, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 10 )   2018.10

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    DOI: 10.7567/JJAP.57.106502

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  172. Elevated-temperature etching of gallium nitride (GaN) in dual-frequency capacitively coupled plasma of CH4/H-2 at 300-500 degrees C Reviewed

    Kako Takashi, Liu Zecheng, Ishikawa Kenji, Kondo Hiroki, Oda Osamu, Sekine Makoto, Hori Masaru

    VACUUM   Vol. 156   page: 219 - 223   2018.10

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    DOI: 10.1016/j.vacuum.2018.07.040

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  173. Cytotoxic effects of plasma-irradiated fullerenol Reviewed

    Kanno Daiki, Tanaka Hiromasa, Ishikawa Kenji, Hashizume Hiroshi, Hori Masaru

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 51 ( 37 )   2018.9

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    DOI: 10.1088/1361-6463/aad510

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  174. 大気圧プラズマ処理による異種材料接合 Invited Reviewed

    近藤 博基, 堤 隆嘉, 石川健治, 関根 誠, 堀 勝

    化学工学   Vol. 82 ( 9 )   2018.9

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  175. New hopes for plasma-based cancer treatment Reviewed

    Hiromasa Tanaka, Masaaki Mizuno, Kenji Ishikawa, Shinya Toyokuni, Hiroaki Kajiyama, Fumitaka Kikkawa, and Masaru Hori

    Plasma   Vol. 1 ( 1 ) page: 150 - 155   2018.9

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    DOI: 10.3390/plasma1010014

  176. Real-time control of a wafer temperature for uniform plasma process Reviewed

    Tsutsumi T., Fuknaga Y., Ishikawa K., Kondo H., Sekine M., Hori M.

    IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings   Vol. 2018-December   2018.7

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    Our developed non-contact method for measurement of temperature of silicon (Si) wafer by using autocorrelation-type fourier domain low coherence interferometer has advantageous in accuracy and rapid response. We demonstrate measurements in temperature for Si wafer at real-time during plasma process and in estimation of heat flux to the wafer from plasma, involving heats balanced plasma source and conductive loss in Si. The analysis indicated that other heat sources like the chamber parts with relatively high temperature impact on the duty ratio during the process with feedback control of the wafer teperture.

    DOI: 10.1109/ISSM.2018.8651183

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  177. Dissociative properties of 1,1,1,2-tetrafluoroethane obtained by computational chemistry Reviewed

    Hayashi Toshio, Ishikawa Kenji, Sekine Makoto, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    DOI: 10.7567/JJAP.57.06JC02

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  178. Temperature dependence on plasma-induced damage and chemical reactions in GaN etching processes using chlorine plasma Reviewed

    Liu Zecheng, Ishikawa Kenji, Imamura Masato, Tsutsumi Takayoshi, Kondo Hiroki, Oda Osamu, Sekine Makoto, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    DOI: 10.7567/JJAP.57.06JD01

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  179. Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom? Reviewed International coauthorship Open Access

    Ishikawa Kenji, Karahashi Kazuhiro, Ishijima Tatsuo, Cho Sung Il, Elliott Simon, Hausmann Dennis, Mocuta Dan, Wilson Aaron, Kinoshita Keizo

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    DOI: 10.7567/JJAP.57.06JA01

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  180. Low-autofluorescence fluoropolymer membrane filters for cell filtration Reviewed Open Access

    Kihara Naoto, Kuboyama Daiki, Onoshima Daisuke, Ishikawa Kenji, Tanaka Hiromasa, Ozawa Naoya, Hase Tetsunari, Koguchi Ryohei, Yukawa Hiroshi, Odaka Hidefumi, Hasegawa Yoshinori, Baba Yoshinobu, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    DOI: 10.7567/JJAP.57.06JF03

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  181. Impact of helium pressure in arc plasma synthesis on crystallinity of single-walled carbon nanotubes Reviewed

    Ando Atsushi, Takeda Keigo, Ohta Takayuki, Ito Masafumi, Hiramatsu Mineo, Ishikawa Kenji, Kondo Hiroki, Sekine Makoto, Suzuki Tomoko, Inoue Sakae, Ando Yoshinori, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    DOI: 10.7567/JJAP.57.06JF01

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  182. Effects of gas residence time of CH4/H-2 on sp(2) fraction of amorphous carbon films and dissociated methyl density during radical-injection plasma-enhanced chemical vapor deposition Reviewed

    Sugiura Hirotsugu, Jia Lingyun, Kondo Hiroki, Ishikawa Kenji, Tsutsumi Takayoshi, Hayashi Toshio, Takeda Keigo, Sekine Makoto, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    DOI: 10.7567/JJAP.57.06JE03

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  183. Dry Process FOREWORD Reviewed

    Karahashi Kazuhiro, Kinoshita Keizo, Higashi Seiichiro, Ishikawa Kenji, Ishijima Tatsuo, Kuboi Nobuyuki

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 6 )   2018.6

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    DOI: 10.7567/JJAP.57.06J001

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  184. Nanographene synthesized in triple-phase plasmas as a highly durable support of catalysts for polymer electrolyte fuel cells Reviewed

    Amano Tomoki, Kondo Hiroki, Takeda Keigo, Ishikawa Kenji, Hiramatsu Mineo, Sekine Makoto, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

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    DOI: 10.7567/JJAP.57.045101

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  185. Oxygen reduction reaction properties of nitrogen-incorporated nanographenes synthesized using in-liquid plasma from mixture of ethanol and iron phthalocyanine Reviewed

    Amano Tomoki, Kondo Hiroki, Takeda Keigo, Ishikawa Kenji, Hiramatsu Mineo, Sekine Makoto, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 4 )   2018.4

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    DOI: 10.7567/JJAP.57.040303

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  186. Cytotoxicity of cancer HeLa cells sensitivity to normal MCF10A cells in cultivations with cell culture medium treated by microwave-excited atmospheric pressure plasmas Reviewed

    Takahashi Yohei, Taki Yusuke, Takeda Keigo, Hashizume Hiroshi, Tanaka Hiromasa, Ishikawa Kenji, Hori Masaru

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 51 ( 11 )   2018.3

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    DOI: 10.1088/1361-6463/aaab09

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  187. Free radical generation by non-equilibrium atmospheric pressure plasma in alcohol-water mixtures: an EPR-spin trapping study Reviewed

    Uchiyama Hidefumi, Ishikawa Kenji, Zhao Qing-Li, Andocs Gabor, Nojima Nobuyuki, Takeda Keigo, Krishna Murali C., Ishijima Tatsuo, Matsuya Yuji, Hori Masaru, Noguchi Kyo, Kondo Takashi

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 51 ( 9 )   2018.3

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    DOI: 10.1088/1361-6463/aaa885

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  188. Facile fabrication of a poly(ethylene terephthalate) membrane filter with precise arrangement of through-holes Reviewed

    Kihara Naoto, Odaka Hidefumi, Kuboyama Daiki, Onoshima Daisuke, Ishikawa Kenji, Baba Yoshinobu, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 3 )   2018.3

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    DOI: 10.7567/JJAP.57.037001

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  189. Reduced HeLa cell viability in methionine-containing cell culture medium irradiated with microwave-excited atmospheric-pressure plasma Reviewed

    Takahashi Yohei, Taki Yusuke, Takeda Keigo, Hashizume Hiroshi, Tanaka Hiromasa, Ishikawa Kenji, Hori Masaru

    PLASMA PROCESSES AND POLYMERS   Vol. 15 ( 3 )   2018.3

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    DOI: 10.1002/ppap.201700200

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  190. Nanographene synthesis employing in-liquid plasmas with alcohols or hydrocarbons Reviewed

    Ando Atsushi, Ishikawa Kenji, Kondo Hiroki, Tsutsumi Takayoshi, Takeda Keigo, Ohta Takayuki, Ito Masafumi, Hiramatsu Mineo, Sekine Makoto, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 2 )   2018.2

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    DOI: 10.7567/JJAP.57.026201

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  191. Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials FOREWORD Reviewed

    Naritsuka Shigeya, Miyazaki Seiichi, Fujiwara Yasufumi, Hiramatsu Mineo, Inoue Yasushi, Ishikawa Kenji, Ito Masafumi, Itoh Takashi, Kasu Makoto, Miyake Hideto, Sasaki Minoru, Shirafuji Tatsuru, Suda Yoshiyuki

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 1 )   2018.1

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    DOI: 10.7567/JJAP.57.01A001

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  192. Selective production of reactive oxygen and nitrogen species in the plasma-treated water by using a nonthermal high-frequency plasma jet Reviewed

    Uchida Giichiro, Takenaka Kosuke, Takeda Keigo, Ishikawa Kenji, Hori Masaru, Setsuhara Yuichi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 57 ( 1 )   2018.1

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    DOI: 10.7567/JJAP.57.0102B4

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  193. Rapid growth of micron-sized graphene flakes using in-liquid plasma employing iron phthalocyanine-added ethanol Reviewed

    Amano Tomoki, Kondo Hiroki, Ishikawa Kenji, Tsutsumi Takayoshi, Takeda Keigo, Hiramatsu Mineo, Sekine Makoto, Hori Masaru

    APPLIED PHYSICS EXPRESS   Vol. 11 ( 1 )   2018.1

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    DOI: 10.7567/APEX.11.015102

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  194. Plasma-activated medium (PAM) kills human cancer-initiating cells Reviewed Open Access

    Ikeda Jun-ichiro, Tanaka Hiromasa, Ishikawa Kenji, Sakakita Hajime, Ikehara Yuzuru, Hori Masaru

    PATHOLOGY INTERNATIONAL   Vol. 68 ( 1 ) page: 23 - 30   2018.1

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    DOI: 10.1111/pin.12617

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  195. Electron impact ionization of perfluoro-methyl-vinyl-ether C3F6O Reviewed

    Kondo Yusuke, Ishikawa Kenji, Hayashi Toshio, Sekine Makoto, Hori Masaru

    PLASMA SOURCES SCIENCE & TECHNOLOGY   Vol. 27 ( 1 )   2018.1

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    DOI: 10.1088/1361-6595/aaa22e

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  196. Cell Deposition Microchip with Micropipette Control over Liquid Interface Motion Reviewed

    Onoshima Daisuke, Hattori Yuya, Yukawa Hiroshi, Ishikawa Kenji, Hori Masaru, Baba Yoshinobu

    CELL MEDICINE   Vol. 10   page: 2155179017733152   2018

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    DOI: 10.1177/2155179017733152

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  197. Isotropic atomic level etching of tungsten using formation and desorption of tungsten fluoride Reviewed

    Shinoda Kazunori, Miyoshi Nobuya, Kobayashi Hiroyuki, Hanaoka Yuko, Kawamura Kohei, Izawa Masaru, Ishikawa Kenji, Hori Masaru

    ADVANCED ETCH TECHNOLOGY FOR NANOPATTERNING VII   Vol. 10589   2018

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    DOI: 10.1117/12.2297241

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  198. Glioblastoma Cell Lines Display Different Sensitivities to Plasma-Activated Medium Reviewed

    Tanaka Hiromasa, Mizuno Masaaki, Ishikawa Kenji, Takeda Keigo, Hashizume Hiroshi, Nakamura Kae, Utsumi Fumi, Kajiyama Hiroaki, Okazaki Yasumasa, Toyokuni Shinya, Akiyama Shinichi, Maruyama Shoichi, Kikkawa Fumitaka, Hori Masaru

    IEEE TRANSACTIONS ON RADIATION AND PLASMA MEDICAL SCIENCES   Vol. 2 ( 2 ) page: 99 - 102   2018

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    DOI: 10.1109/trpms.2017.2721973

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  199. Oncogene mutation analysis of circulating tumor cells using single-cell membrane separation and DNA amplification Reviewed

    Onoshima D., Kuboyama D., Kihara N., Tanaka H., Hase T., Yukawa H., Ishikawa K., Odaka H., Hasegawa Y., Hori M., Baba Y.

    22nd International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2018   Vol. 3   page: 1291 - 1293   2018

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    We present a study of genomic profiling for circulating tumor cells (CTCs) using a blood microfiltration system. DNA amplification of CTCs was performed with a microfilter for single cancer cells in a clinical setting. This strategy was successfully used to detect the driver mutations in epidermal growth factor (EGF) receptor oncogenes by quantitative PCR and characterize the dosing effect of molecularly targeted drug for lung cancer.

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  200. Exosome isolation toward cancer diagnosis using glass filter with nanoporous structure Reviewed

    Aoki K., Yukawa H., Onoshima D., Yamazaki S., Kihara N., Koguchi R., Takahashi K., Odaka H., Ishikawa K., Hori M., Baba Y.

    22nd International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2018   Vol. 3   page: 1409 - 1410   2018

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    We present a study of centrifugal filtration device toward easy-to-use approach of non-invasive liquid biopsy for cancer diagnosis by cell-derived nanoscale vesicles (exosomes). A phase-dispersed glass filter having nanoporous structure was embedded into a spin column to trap exosomes with small centrifuge. This device enabled over 90% exosome isolation from biological samples within 10 minutes.

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  201. Dynamic analysis of reactive oxygen nitrogen species in plasma-activated culture medium by UV absorption spectroscopy Reviewed International coauthorship

    Brubaker Timothy R., Ishikawa Kenji, Takeda Keigo, Oh Jun-Seok, Kondo Hiroki, Hashizume Hiroshi, Tanaka Hiromasa, Knecht Sean D., Bilen Sven G., Hori Masaru

    JOURNAL OF APPLIED PHYSICS   Vol. 122 ( 21 )   2017.12

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    DOI: 10.1063/1.4999256

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  202. Dependence of absolute photon flux on infrared absorbance alteration and surface roughness on photoresist polymers irradiated with vacuum ultraviolet photons emitted from HBr plasma Reviewed

    Zhang Yan, Takeuchi Takuya, Ishikawa Kenji, Hayashi Toshio, Takeda Keigo, Sekine Makoto, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 12 )   2017.12

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    DOI: 10.7567/JJAP.56.126503

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  203. State of the art in medical applications using non-thermal atmospheric pressure plasma Reviewed International coauthorship

    Tanaka H., Ishikawa K., Mizuno M., Toyokuni S., Kajiyama H., Kikkawa F., Metelmann H.R., Hori M.

    Reviews of Modern Plasma Physics   Vol. 1 ( 1 )   2017.12

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    Plasma medical science is a novel interdisciplinary field that combines studies on plasma science and medical science, with the anticipation that understanding the scientific principles governing plasma medical science will lead to innovations in the field. Non-thermal atmospheric pressure plasma has been used for medical treatments, such as for cancer, blood coagulation, and wound healing. The interactions that occur between plasma and cells/tissues have been analyzed extensively. Direct and indirect treatment of cells with plasma has broadened the applications of non-thermal atmospheric pressure plasma in medicine. Examples of indirect treatment include plasma-assisted immune-therapy and plasma-activated medium. Controlling intracellular redox balance may be key in plasma cancer treatment. Animal studies are required to test the effectiveness and safety of these treatments for future clinical applications.

    DOI: 10.1007/s41614-017-0004-3

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  204. Intracellular responses to reactive oxygen and nitrogen species, and lipid peroxidation in apoptotic cells cultivated in plasma-activated medium Reviewed

    Furuta Ryo, Kurake Naoyuki, Ishikawa Kenji, Takeda Keigo, Hashizume Hiroshi, Tanaka Hiromasa, Kondo Hiroki, Sekine Makoto, Hori Masaru

    PLASMA PROCESSES AND POLYMERS   Vol. 14 ( 11 )   2017.11

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    DOI: 10.1002/ppap.201700123

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  205. Surface roughening of photoresist after change of the photon/radical and ion treatment sequence Reviewed

    Zhang Yan, Takeuchi Takuya, Ishikawa Kenji, Takeda Keigo, Kondo Hiroki, Sekine Makoto, Hori Masaru

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   Vol. 35 ( 6 )   2017.11

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    DOI: 10.1116/1.4994218

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  206. 最先端プラズマバイオ技術 Invited Reviewed

    堀勝,石川健治,近藤隆,田中宏昌,橋爪博司

    放射線化学     page: 3 - 14   2017.10

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  207. Crystallization of calcium oxalate dihydrate in a buffered calcium-containing glucose solution by irradiation with non-equilibrium atmospheric pressure plasma Reviewed

    Kurake Naoyuki, Tanaka Hiromasa, Ishikawa Kenji, Nakamura Kae, Kajiyama Hiroaki, Kikkawa Fumitaka, Mizuno Masaaki, Ikehara Yuzuru, Hori Masaru

    JOURNAL OF APPLIED PHYSICS   Vol. 122 ( 14 )   2017.10

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    DOI: 10.1063/1.5006598

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  208. High-durability catalytic electrode composed of Pt nanoparticle-supported carbon nanowalls synthesized by radical-injection plasma-enhanced chemical vapor deposition Reviewed

    Imai Shun, Kondo Hiroki, Cho Hyungjun, Kano Hiroyuki, Ishikawa Kenji, Sekine Makoto, Hiramatsu Mineo, Ito Masafumi, Hori Masaru

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 50 ( 40 )   2017.10

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    DOI: 10.1088/1361-6463/aa8131

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  209. Cold atmospheric helium plasma causes synergistic enhancement in cell death with hyperthermia and an additive enhancement with radiation Reviewed Open Access

    Moniruzzaman Rohan, Rehman Mati Ur, Zhao Qing-Li, Jawaid Paras, Takeda Keigo, Ishikawa Kenji, Hori Masaru, Tomihara Kei, Noguchi Kyo, Kondo Takashi, Noguchi Makoto

    SCIENTIFIC REPORTS   Vol. 7 ( 1 ) page: 11659   2017.9

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    DOI: 10.1038/s41598-017-11877-8

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  210. Lipid droplets exhaustion with caspases activation in HeLa cells cultured in plasma-activated medium observed by multiplex coherent anti-Stokes Raman scattering microscopy Reviewed

    Furuta Ryo, Kurake Naoyuki, Takeda Keigo, Ishikawa Kenji, Ohta Takayuki, Ito Masafumi, Hashizume Hiroshi, Tanaka Hiromasa, Kondo Hiroki, Sekine Makoto, Hori Masaru

    BIOINTERPHASES   Vol. 12 ( 3 ) page: 031006   2017.9

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    DOI: 10.1116/1.4997170

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  211. Thermally enhanced formation of photon-induced damage on GaN films in Cl<inf>2</inf> plasma Reviewed

    Liu Z., Asano A., Imamura M., Ishikawa K., Takeda K., Kondo H., Oda O., Sekine M., Hori M.

    Japanese Journal of Applied Physics   Vol. 56 ( 9 )   2017.8

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    Deep ultraviolet (UV) photons emitted from Cl2 plasmas become a critical cause of degradation in both photoluminescence (PL) properties and surface stoichiometry as a result of plasma-induced damage on GaN films in Cl2 plasma etching at high temperatures. The damages were formed thermally by photon-irradiations of plasma UV emissions with wavelengths of >258-306 nm from Cl2 plasma at temperatures greater than 500 °C. The damage were observed with a depth of approximately 3.2 nm. The PL property degraded by the UV emission-induced damage at an early period of plasma etching and reached a constant value.

    DOI: 10.7567/JJAP.56.096501

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  212. Thermal Cyclic Atomic-Level Etching of Nitride Films: A Novel Way for Atomic-Scale Nanofabrication Reviewed

    Shinoda, K; Miyoshi, N; Kobayashi, H; Kurihara, M; Izawa, M; Ishikawa, K; Hori, M

    ATOMIC LAYER DEPOSITION APPLICATIONS 13   Vol. 80 ( 3 ) page: 3 - 14   2017.8

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    A highly selective, rapid thermal-cyclic atomic-level etching (ALE) process for SiNx films has been developed. The first step of this process is exposing SiNx to hydrofluorocarbon plasma to form an (NH4)2SiF6 layer on the SiNx surface. The second step is rapid thermal annealing with infrared (IR) irradiation to decompose and sublimate the (NH4)2SiF6 layer. Etching of SiNx was observed after the (NH4)2SiF6 layer was removed by thermal annealing. Cyclic etching tests were carried out by repeated plasma exposure and IR irradiation. It was found that the cyclic process is self-limiting because etching depth depends only on the cycle number and not on the plasma exposure time. A high selectivity over SiC2 and poly Si was confirmed. This paper reviews the novel isotropic ALE for nitride films focusing on the surface reaction mechanism investigated by x-ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS). Isotropic ALE of TiN was also demonstrated using the same approach.

    DOI: 10.1149/08003.0003ecst

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  213. Reduction of chlorine radical chemical etching of GaN under simultaneous plasma-emitted photon irradiation Reviewed

    Liu Zecheng, Imamura Masato, Asano Atsuki, Ishikawa Kenji, Takeda Keigo, Kondo Hiroki, Oda Osamu, Sekine Makoto, Hori Masaru

    APPLIED PHYSICS EXPRESS   Vol. 10 ( 8 )   2017.8

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    DOI: 10.7567/APEX.10.086502

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  214. Temperature dependence of protection layer formation on organic trench sidewall in H-2/N-2 plasma etching with control of substrate temperature Reviewed

    Fukunaga Yusuke, Tsutsumi Takayoshi, Takeda Keigo, Kondo Hiroki, Ishikawa Kenji, Sekine Makoto, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 7 )   2017.7

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    DOI: 10.7567/JJAP.56.076202

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  215. Intracellular-molecular changes in plasma-irradiated budding yeast cells studied using multiplex coherent anti-Stokes Raman scattering microscopy Reviewed

    Furuta Ryo, Kurake Naoyuki, Ishikawa Kenji, Takeda Keigo, Hashizume Hiroshi, Kondo Hiroki, Ohta Takayuki, Ito Masafumi, Sekine Makoto, Hori Masaru

    PHYSICAL CHEMISTRY CHEMICAL PHYSICS   Vol. 19 ( 21 ) page: 13438 - 13442   2017.6

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    DOI: 10.1039/c7cp00489c

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  216. Dry Process FOREWORD Reviewed

    Ishikawa Kenji, Kinoshita Keizo, Higashi Seiichiro, Ichiki Takanori, Karahashi Kazuhiro, Kuboi Nobuyuki

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 6 )   2017.6

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    DOI: 10.7567/JJAP.56.06H001

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  217. Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions? Reviewed International coauthorship Open Access

    Ishikawa Kenji, Karahashi Kazuhiro, Ichiki Takanori, Chang Jane P., George Steven M., Kessels W. M. M., Lee Hae June, Tinck Stefan, Um Jung Hwan, Kinoshita Keizo

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 6 )   2017.6

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    DOI: 10.7567/JJAP.56.06HA02

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  218. Hydrogen peroxide sensor based on carbon nanowalls grown by plasma-enhanced chemical vapor deposition Reviewed

    Tomatsu Masakazu, Hiramatsu Mineo, Foord John S., Kondo Hiroki, Ishikawa Kenji, Sekine Makoto, Takeda Keigo, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 6 )   2017.6

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    DOI: 10.7567/JJAP.56.06HF03

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  219. Growth of InN films by radical-enhanced metal organic chemical vapor deposition at a low temperature of 200 degrees C Reviewed

    Takai Shinnosuke, Lu Yi, Oda Osamu, Takeda Keigo, Kondo Hiroki, Ishikawa Kenji, Sekine Makoto, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 6 )   2017.6

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    DOI: 10.7567/JJAP.56.06HE08

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  220. Electron behaviors in afterglow of synchronized dc-imposed pulsed fluorocarbon-based plasmas Reviewed

    Ueyama Toshinari, Fukunaga Yusuke, Tsutsumi Takayoshi, Takeda Keigo, Kondo Hiroki, Ishikawa Kenji, Sekine Makoto, Iwata Manabu, Ohya Yoshinobu, Sugai Hideo, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 6 )   2017.6

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    DOI: 10.7567/JJAP.56.06HC03

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  221. Selective atomic-level etching using two heating procedures, infrared irradiation and ion bombardment, for next-generation semiconductor device manufacturing Reviewed

    Shinoda K., Miyoshi N., Kobayashi H., Miura M., Kurihara M., Maeda K., Negishi N., Sonoda Y., Tanaka M., Yasui N., Izawa M., Ishii Y., Okuma K., Saldana T., Manos J., Ishikawa K., Hori M.

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 50 ( 19 )   2017.5

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    DOI: 10.1088/1361-6463/aa6874

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  222. Spatial distributions of O, N, NO, OH and vacuum ultraviolet light along gas flow direction in an AC-excited atmospheric pressure Ar plasma jet generated in open air Reviewed

    Takeda Keigo, Ishikawa Kenji, Tanaka Hiromasa, Sekine Makoto, Hori Masaru

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 50 ( 19 )   2017.5

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    DOI: 10.1088/1361-6463/aa6555

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  223. 電子スピン共鳴法を活用したプラズマバイオ反応プロセスの診断 Invited Reviewed

    石川健治, 近藤隆, 竹田圭吾, 呉準席, 橋爪博司, 田中宏昌, 近藤博基, 太田貴之, 伊藤昌文, 関根誠, 堀勝

    プラズマ核融合学会誌     2017.5

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  224. Bactericidal pathway of Escherichia coli in buffered saline treated with oxygen radicals Reviewed

    Kobayashi Tsuyoshi, Iwata Natsumi, Oh Jun-Seok, Hahizume Hiroshi, Ohta Takayuki, Takeda Keigo, Ishikawa Kenji, Hori Masaru, Ito Masafumi

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 50 ( 15 )   2017.4

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    DOI: 10.1088/1361-6463/aa61d7

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  225. Effects of center dot OH and center dot NO radicals in the aqueous phase on H2O2 and NO2- generated in plasma-activated medium Reviewed

    Kurake Naoyuki, Tanaka Hiromasa, Ishikawa Kenji, Takeda Keigo, Hashizume Hiroshi, Nakamura Kae, Kajiyama Hiroaki, Kondo Takashi, Kikkawa Fumitaka, Mizuno Masaaki, Hori Masaru

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 50 ( 15 )   2017.3

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    DOI: 10.1088/1361-6463/aa5f1d

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  226. Spatial profiles of interelectrode electron density in direct current superposed dual-frequency capacitively coupled plasmas Reviewed

    Ohya Yoshinobu, Ishikawa Kenji, Komuro Tatsuya, Yamaguchi Tsuyoshi, Takeda Keigo, Kondo Hiroki, Sekine Makoto, Hori Masaru

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 50 ( 15 )   2017.3

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    DOI: 10.1088/1361-6463/aa60f7

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  227. Behavior of absolute densities of atomic oxygen in the gas phase near an object surface in an AC-excited atmospheric pressure He plasma jet Reviewed

    Takeda Keigo, Kumakura Takumi, Ishikawa Kenji, Tanaka Hiromasa, Sekine Makoto, Hori Masaru

    APPLIED PHYSICS EXPRESS   Vol. 10 ( 3 )   2017.3

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    DOI: 10.7567/APEX.10.036201

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  228. Characteristics of optical emissions of arc plasma processing for high-rate synthesis of highly crystalline single-walled carbon nanotubes Reviewed

    Ando Atsushi, Takeda Keigo, Ohta Takayuki, Ito Masafumi, Hiramatsu Mineo, Ishikawa Kenji, Kondo Hiroki, Sekine Makoto, Suzuki Tomoko, Inoue Sakae, Ando Yoshinori, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 3 )   2017.3

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    DOI: 10.7567/JJAP.56.035101

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  229. Investigation of effects of ion energies on both plasma-induced damage and surface morphologies and optimization of high-temperature Cl-2 plasma etching of GaN Reviewed

    Liu Zecheng, Pan Jialin, Asano Atsuki, Ishikawa Kenji, Takeda Keigo, Kondo Hiroki, Oda Osamu, Sekine Makoto, Hori Masaru

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 56 ( 2 )   2017.2

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    DOI: 10.7567/JJAP.56.026502

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  230. Absolute density of precursor SiH3 radicals and H atoms in H-2-diluted SiH4 gas plasma for deposition of microcrystalline silicon films Reviewed

    Abe Yusuke, Ishikawa Kenji, Takeda Keigo, Tsutsumi Takayoshi, Fukushima Atsushi, Kondo Hiroki, Sekine Makoto, Hori Masaru

    APPLIED PHYSICS LETTERS   Vol. 110 ( 4 )   2017.1

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    DOI: 10.1063/1.4974821

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  231. Microfluidic transport through micro-sized holes treated by non-equilibrium atmospheric-pressure plasma Reviewed Open Access

    Takumi Ito, Kenji Ishikawa, Daisuke Onoshima, Naoto Kihara, Kentaro Tatsukoshi, Hidefumi Odaka, Hiroshi Hashizume, Hiromasa Tanaka, Hiroshi Yukawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Yoshinobu Baba, and Masaru Hori

    IEEE Transactions on Plasma Science   Vol. 44 ( 12 ) page: 3060 - 3065   2016.12

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    DOI: 10.1109/TPS.2016.2571721

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  232. Non-thermal atmospheric pressure plasma activates lactate in Ringer’s solution for anti-tumor effects Reviewed Open Access

    Hiromasa Tanaka, Kae Nakamura, Masaaki Mizuno, Kenji Ishikawa, Keigo Takeda, Hiroaki Kajiyama, Fumi Utsumi, Fumitaka Kikkawa, and Masaru Hori

    Scientific Reports   Vol. 6   page: 36282   2016.11

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    DOI: 10.1038/srep36282

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  233. Effects of assisted magnetic field to an atmospheric-pressure plasma jet on radical generation at the plasma-surface interface and bactericidal function Reviewed

    Chih-Tung Liu, Takumi Kumakura, Kenji Ishikawa, Hiroshi Hashizume, Keigo Takeda, Masafumi Ito, Jong-Shinn Wu, and Masaru Hori

    Plasma Sources Science and Technology   Vol. 25 ( 6 ) page: 065005   2016.10

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    DOI: 10.1088/0963-0252/25/6/065005

  234. Micro sand timer in glass membrane device separates single circulating tumor cells in blood Reviewed

    Daiki Kuboyama, Daisuke Onoshima, Hiroshi Yukawa, Hiromasa Tanaka, Kenji Ishikawa, Masaru Hori, and Yoshinobu Baba

    The 20th International Conference on Miniaturized Systems for Chemistry and Life Sciences, Micro Total Analysis Systems 2016 (Convention Center Dublin, Dublin, Ireland, Oct. 9-13, 2016)     page: 297 - 298   2016.10

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  235. Control of Internal Plasma Parameters Toward Atomic Level Processing Reviewed

    Makoto Sekine, Takayoshi Tsutsumi, Yusuke Fukunaga, Keigo Takeda, Hiroki Kondoa, Kenji Ishikawa, and Masaru Hori

    ECS Transactions   Vol. 75 ( 6 ) page: 21 - 24   2016.10

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    DOI: 10.1149/07506.0021ecst

  236. Thermal cyclic etching of silicon nitride by formation and desorption of ammonium fluorosilicate Reviewed

    Kazunori Shinoda, Masaru Izawa, Tadamitsu Kanekiyo, Kenji Ishikawa, and Masaru Hori

    Applied Physics Express   Vol. 9 ( 10 ) page: 106201   2016.9

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    DOI: 10.7567/APEX.9.106201

  237. Cold plasma interactions with enzymes in foods and model systems Reviewed International coauthorship

    N. N. Misra, S. K. Pankaj, Annalisa Segat, and Kenji Ishikawa

    Trends in Food Science & Technology   Vol. 55   page: 39 - 47   2016.9

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    DOI: 10.1016/j.tifs.2016.07.001

  238. Synthesis of calcium oxalate crystals in culture medium irradiated with non-equilibrium atmospheric-pressure plasma Reviewed

    Naoyuki Kurake, Hiromasa Tanaka, Kenji Ishikawa, Kae Nakamura, Hiroaki Kajiyama, Fumitaka Kikkawa, Masaaki Mizuno, Yoko Yamanishi, and Masaru Hori

    Applied Physics Express   Vol. 9 ( 9 ) page: 096201   2016.8

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    DOI: 10.7567/APEX.9.096201

  239. Rapid electron density decay observed by surface-wave probe in afterglow of pulsed fluorocarbon-based plasma Reviewed

    Yoshinobu Ohya, Manabu Iwata, Kenji Ishikawa, Makoto Sekine, Masaru Hori, and Hideo Sugai

    Japanese Journal of Applied Physics   Vol. 55 ( 8 ) page: 080309   2016.7

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    DOI: 10.7567/JJAP.55.080309

  240. ラジカル支援原子層制御ナノプロセス Invited Reviewed

    石川健治, 小林明子, 盧翌, 竹田圭吾, 近藤博基, 関根誠, 堀勝

    化学工学     2016.7

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  241. Primary dissociation channels of SiH4 and H abstract reactions Reviewed Open Access

    Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    Japanese Journal of Applied Physics   Vol. 55 ( 7S2 ) page: 07LD07   2016.6

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    DOI: 10.7567/JJAP.55.07LD07

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  242. Helium based cold atmospheric plasma-induced reactive oxygen species-mediated apoptotic pathway attenuated by platinum nanoparticles Reviewed Open Access

    Paras Jawaid, Mati Ur Rehman, Qing-Li Zhao, Keigo Takeda, Kenji Ishikawa, Masaru Hori, Tadamichi Shimizu, and Takashi Kondo

    Journal of Cellular and Molecular Medicin   Vol. 20 ( 9 ) page: 1737 - 1748   2016.6

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    DOI: 10.1111/jcmm.12880

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  243. Formation of a SiOF reaction intermixing layer on SiO2 etching using C4F6/O2/Ar plasmas Reviewed

    Yoshinobu Ohya, Maju Tomura, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    Journal of Vacuum Science and Technology A Letters   Vol. 34 ( 4 ) page: 040602   2016.5

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    DOI: 10.1116/1.4949570

  244. Effects of nitrogen on apoptosis and changes in gene expression in human lymphoma U937 cells exposed to argon-cold atmospheric pressure plasma Reviewed

    Yoshiaki Tabuchi, Hidefumi Uchiyama, Qing-li Zhao, Tatsuya Yunoki, Qabor Andocs, Nobuyuki Nojima, Keigo Takeda, Kenji Ishikawa, Masaru Hori and Takashi Kondo

    International Journal of Molecular Medicine   Vol. 37   page: 1706-1714   2016.5

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    DOI: 10.3892/ijmm.2016.2574

  245. Red Blood Cell Coagulation Induced by Low-temperature Plasma Treatment Reviewed

    Kenji Miyamoto, Sanae Ikehara, Hikaru Takei, Yoshihiro Akimoto, Hajime Sakakita, Kenji Ishikawa, Masashi Ueda, Jun-ichiro Ikeda, Masahiro Yamagishi, Jaeho Kim, Takashi Yamaguchi, Hayao Nakanishi, Nobuyuki Shimizu, Masaru Hori, and Yuzuru Ikehara

    Archives of Biochemistry and Biophysics     2016.4

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    DOI: 10.1016/j.abb.2016.03.023

  246. Effect of gas residence time on near-edge X-ray absorption fine structures of hydrogenated amorphous carbon films grown by plasma-enhanced chemical vapor deposition Reviewed

    Lingyun Jia, Hirotsugu Sugiura, Hiroki Kondo, Keigo Takeda, Kenji Ishikawa, Osamu Oda, Makoto Sekine, Mineo Hiramatsu and Masaru Hori

    Japan. J. Appl. Phys.   Vol. 55 ( 4 ) page: 040305   2016.3

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    DOI: 10.7567/JJAP.55.040305

  247. Effects of Radical Species on Structural and Electronic Properties of Amorphous Carbon Films Deposited by Radical-injection Plasma-enhanced Chemical Vapor Deposition Reviewed

    Lingyun Jia, Hirotsugu Sugiura, Hiroki Kondo, Keigo Takeda, Kenji Ishikawa, Osamu Oda, Makoto Sekine, Mineo Hiramatsu, Masaru Hori

    Plasma Process Polym.     2016.2

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    DOI: 10.1002/ppap.201500229

  248. Cell survival of glioblastoma grown in medium containing hydrogen peroxide and/or nitrite, or in plasma-activated medium Reviewed

    Naoyuki Kurake, Hiromasa Tanaka, Kenji Ishikawa, Takashi Kondo, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Kae Nakamura, Hiroaki Kajiyama, Fumitaka Kikkawa, Masaaki Mizuno, Masaru Hori

    Archives of Biochemistry and Biophysics     2016.1

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    DOI: 10.1016/j.abb.2016.01.011

  249. Real-time temperature-monitoring of Si substrate during plasma processing and its heat-flux analysis Reviewed

    Takayoshi Tsutsumi, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Takayuki Ohta, Masafumi Ito, Makoto Sekine, and Masaru Hori

    Japan. J. Appl. Phys.   Vol. 55   page: 01AB04   2016.1

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    DOI: 10.7567/JJAP.55.01AB04

  250. Cover Picture: Plasma Process. Polym. 12∕2015 (page 1329) Reviewed

    Masashi Ueda, Daiki Yamagami, Keiko Watanabe, Asami Mori, Hiroyuki Kimura, Kohei Sano, Hideo Saji, Kenji Ishikawa, Masaru Hori, Hajime Sakakita, Yuzuru Ikehara and Shuichi Enomoto

    Plasma Processes and Polymers   Vol. 12 ( 12 ) page: 1329   2015.12

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    DOI: 10.1002/ppap.201570043

  251. Plasma Blood Coagulation Without Involving the Activation of Platelets and Coagulation Factors Reviewed

    Sanae Ikehara, Hajime Sakakita, Kenji Ishikawa, Yoshihiro Akimoto, Takashi Yamaguchi, Masahiro Yamagishi, Jaeho Kim, Masashi Ueda, Jun-ichiro Ikeda, Hayao Nakanishi, Nobuyuki Shimizu, Masaru Hori, and Yuzuru Ikehara

    Plasma Processes and Polymers   Vol. 12 ( 12 ) page: 1348–1353   2015.12

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    DOI: 10.1002/ppap.201500132

  252. Superhydrophilic glass membrane device with open-microhole array for filtering and counting rare tumor cells Reviewed

    Akihiro Yonese, Daisuke Onoshima, Hiroshi Yukawa, Kenji Ishikawa, Masaru Hori, and Yoshinobu Baba

    Micro Total Analysis Systems 2015     page: 493-495   2015.10

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  253. Histological and nuclear medical comparison of inflammation after haemostasis with non-thermal plasma and thermal coagulation Reviewed

    Masashi Ueda, Daiki Yamagami, Keiko Watanabe, Asami Mori, Hiroyuki Kimura, Kohei Sano, Hideo Saji, Kenji Ishikawa, Masaru Hori, Hajime Sakakita, Yuzuru Ikehara, and Shuichi Enomoto

    Plasma Processes and Polymers   Vol. 12 ( 12 ) page: 1338–1342   2015.9

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    DOI: 10.1002/ppap.201500099

  254. Plasma with high electron density and plasma-activated medium for cancer treatment Reviewed

    Hiromasa Tanaka, Masaaki Mizuno, Kenji Ishikawa, Hiroki Kondo, Keigo Takeda, Hiroshi Hashizume, Kae Nakamura, Fumi Utsumi, Hiroaki Kajiyama, Hiroyuki Kano, Yasumasa Okazaki, Shinya Toyokuni, Shin’ichi Akiyama, Shoichi Maruyama, Suguru Yamada, Yasuhiro Kodera, Hiroki Kaneko, Hiroko Terasaki, Hirokazu Hara, Tetsuo Adachi, Machiko Iida, Ichiro Yajima, Masashi Kato, Fumitaka Kikkawa, and Masaru Hori

    Clinical Plasma Medicine   Vol. 3   page: 72-76   2015.9

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    DOI: 10.1016/j.cpme.2015.09.001

  255. EPR-Spin Trapping and Flow cytometric Studies of Free Radicals Generated using Cold Atmospheric Argon Plasma and X-ray irradiation in Aqueous Solutions and Intracellular Milieu Reviewed

    Hidefumi Uchiyama, Qing-Li Zhao, Mariame Ali Hassan, Gabor Andocs, Nobuyuki Nojima, Keigo Takeda, Kenji Ishikawa, Masaru Hori, and Takashi Kondo

    PLoS One   Vol. 10 ( 8 ) page: e0136956   2015.8

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    DOI: 10.1371/journal.pone.0136956

  256. Feedback Control System of Wafer Temperature for Advanced Plasma Processing and its Application to Organic Film Etching Reviewed

    Takayoshi Tsutsumi, Yusuke Fukunaga, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Takayuki Ohta, Masafumi Ito, Makoto Sekine, and Masaru Hori

    IEEE Trans Semiconductor manufacturing   Vol. 28 ( 4 ) page: 515-520   2015.8

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    DOI: 10.1109/TSM.2015.2470554

  257. Decreased expression levels of cell cycle regulators and matrix metalloproteinases in melanoma from RET-transgenic mice by single irradiation of non-equilibrium atmospheric pressure plasmas Reviewed

    Machiko Iida, Ichiro Yajima, Nobutaka Ohgami, Li Xiang, Cunchao Zou, Kenji Ishikawa, Masaru Hori, and Masashi Kato

    International Journal of Clinical and Experimental Pathology   Vol. 8 ( 8 ) page: 9326-9331   2015.8

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  258. Suppression of plasma-induced damage on GaN etched by a Cl2 plasma at high temperatures Reviewed

    Zecheng Liu, Jialin Pan, Takashi Kako Kenji Ishikawa, Osamu Oda, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori

    Japan. J. Appl. Phys.   Vol. 54   page: 06GB04   2015.6

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    DOI: 10.7567/JJAP.54.06GB04

  259. Electronic properties of HBr, O2 and Cl2 used in Si etching Reviewed

    Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    Japan. J. Appl. Phys.   Vol. 54   page: 06GA03   2015.5

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    DOI: 10.7567/JJAP.54.06GA03

  260. Silicon nitride (SiN) etch performance of CH2F2 plasmas diluted with argon or krypton Reviewed

    Yusuke Kondo, Kenji Ishikawa, Toshio Hayashi, Yudai Miyawaki, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori

    Japan. J. Appl. Phys.   Vol. 54 ( 4 ) page: 040303   2015.3

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    DOI: 10.7567/JJAP.54.040303

  261. Plasma diagnostic approach for high rate nanocrystalline Si synthesis in RF/UHF hybrid plasmas using a PECVD process Reviewed

    Bibhuti Bhusan Sahu, Jeon G. Han, Kyung-Sik Shin, Kenji Ishikawa, Masaru Hori, and Yudai Miyawaki

    Plasma Sources Sci. Technol.   Vol. 24 ( 2 ) page: 025019   2015.3

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    DOI: 10.1088/0963-0252/24/2/025019

  262. CF3+ fragmentation by electron impact ionization of perfluoro-propyl-vinyl-ethers, C5F10O, in gas phase Reviewed International coauthorship

    Yusuke Kondo, Kenji Ishikawa, Toshio Hayashi, Yudai Miyawaki, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori

    Japan. J. Appl. Phys.   Vol. 54 ( 4 ) page: 040301   2015.3

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    DOI: 10.7567/JJAP.54.040301

  263. Study of the decomposition mechanism of PMMA-type polymers by hydrogen radicals Reviewed

    Yu Arai, Yusuke Noto, Yousuke Goto, Seiji Takahashi, Masashi Yamamoto, Akihiko Kono, Tatsuo Ishijima, Kenji Ishikawa, Masaru Hori, and Hideo Horibe

    Thin Solid Film   Vol. 575   page: 12-16   2015.2

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2014.10.021

  264. Estimation of activation energies for decomposition reaction of polymer by hydrogen radicals generated using hot-wire catalyzer Reviewed

    Akihiko Kono, Yu Arai, Yousuke Goto, Masashi Yamamoto, Seiji Takahashi, Tadaaki Yamagishi, Kenji Ishikawa, Masaru Hori, and Hideo Horibe

    Thin Solid Film   Vol. 575   page: 17-20   2015.2

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    DOI: 10.1016/j.tsf.2014.10.020

  265. Experimental evidence of warm electron populations in magnetron sputtering plasmas Reviewed International coauthorship

    B. B. Sahu, Jeon G. Han, Hye R. Kim, Kenji Ishikawa, and Masaru Hori

    J. Appl. Phys.   Vol. 117   page: 033301   2015.1

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    DOI: 10.1063/1.4905901

  266. Hydrofluorocarbon ion density of argon- or krypton-diluted CH2F2 plasmas: Generation of CH2F+ and CHF2+ by dissociative-ionization in charge exchange collisions Reviewed

    Yusuke Kondo, Yudai Miyawaki, Kenji Ishikawa, Toshio Hayashi, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori

    J. Phys. D: Appl. Phys.   Vol. 48 ( 4 ) page: 045202   2015.1

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    DOI: 10.1088/0022-3727/48/4/045202

  267. Robust characteristics of semiconductor-substrate temperature-measurement method using auto-correlation type frequency-domain low-coherence interferometry Reviewed

    Takayoshi Tsutsumi, Takayuki Ohta, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori, and Masafumi Ito

    Jpn. J. Appl. Phys.   Vol. 54   page: 01AB03   2015.1

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    DOI: 10.7567/JJAP.54.01AB03

  268. Quantitative Clarification of Inactivation Mechanism of Penicillium digitatum Spores Treated with Neutral Oxygen Radicals Reviewed

    Hiroshi Hashizume, Takayuki Ohta, Keigo Takeda, Kenji Ishikawa, Masaru Hori, and Masafumi Ito

    Jpn. J. Appl. Phys.   Vol. 54   page: 01AG05   2015.1

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    DOI: 10.7567/JJAP.54.01AG05

  269. Plasma Medical Science for Cancer Therapy: Toward Cancer Therapy Using Nonthermal Atmospheric Pressure Plasma Invited Reviewed

    Hiromasa Tanaka, Masaaki Mizuno, Kenji Ishikawa, Keigo Takeda, Kae Nakamura, Fumi Utsumi, Hiroaki Kajiyama, Hiroyuki Kano, Yasumasa Okazaki, Shinnya Toyokuni, Shoichi Maruyama, Fumitaka Kikkawa, and Masaru Hori

    IEEE Trans. on Plasma Sci.   Vol. 42 ( 12 ) page: 3760-3763   2014.12

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    DOI: 10.1109/TPS.2014.2353659

  270. Effectiveness of plasma diagnostic in ultra high frequency and radio frequency hybrid plasmas for synthesis of silicon nitride film at low temperature Reviewed International coauthorship

    Bibhuti Bhusan Sahu, Kyung-Sik Shin, Su-Bong Jin, Jeon G. Han, Kenji Ishikawa and Masaru Hori

    J. Appl. Phys.   Vol. 116   page: 134903   2014.10

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    DOI: 10.1063/1.4896833

  271. Recovery of Atom Density Drift Caused by Change in Reactor Wall Conditions by Real-time Autonomous Control Reviewed

    Toshiya Suzuki, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori

    Journal of Physics D: Applied Physics   Vol. 47   page: 422002   2014.9

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    DOI: 10.1088/0022-3727/47/42/422002

  272. Diagnostics of plasma-biological surface interactions in low pressure and atmospheric pressure plasmas Invited Reviewed

    Kenji Ishikawa, and Masaru Hori

    International Journal of Modern Physics: Conference Series   Vol. 32   page: 1460318   2014.8

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    DOI: 10.1142/S2010194514603184

  273. Cell survival and proliferation signaling pathways are downregulated by plasma-activated medium in glioblastoma brain tumor cells Reviewed

    Hiromasa Tanaka, Masaaki Mizuno, Kenji Ishikawa, Kae Nakamura, Fumi Utsumi, Hiroaki Kajiyama, Hiroyuki Kano, Shoichi Maruyama, Fumitaka Kikkawa, and Masaru Hori

    Plasma Medicine   Vol. 4   page: 1   2014.7

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    DOI: 10.1615/PlasmaMed.2013008267

  274. Temporal Changes of Absolute Densities of Atoms in H2 and N2 Mixture Gas Plasmas by Surface Modifications of Reactor Wall Reviewed

    Toshiya Suzuki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    Jpn. J. Appl. Phys.   Vol. 53   page: 050301   2014.4

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    DOI: 10.7567/JJAP.53.050301

  275. Epitaxial Growth of GaN by Radical-Enhanced Metalorganic Chemical Vapor Deposition (REMOCVD) in the Downflow of a Very High Frequency (VHF) N2/H2 Excited Plasma– Effect of TMG Flow Rate and VHF Power Reviewed

    Yi Lu, Hiroki Kondo, Kenji Ishikawa, Osamu Oda, Keigo Takeda, Makoto Sekine, Hiroshi Amano, and Masaru Hori

    J. Cryst. Growth   Vol. 391   page: 97-103   2014.4

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    DOI: 10.1016/j.jcrysgro.2014.01.014

  276. Hierarchical regrowth of flowerlike nanographene sheets on oxygen-plasma-treated carbon nanowalls

    Hironao Shimoeda, Hiroki Kondo, Kenji Ishikawa, Mineo Hiramatsu, Makoto Sekine, and Masaru Hori

    Appl. Phys. Express   Vol. 7   page: 046201   2014.3

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    DOI: 10.7567/APEX.7.046201

  277. Effects of nitrogen plasma post-treatment on electrical conduction of carbon nanowalls Reviewed

    Hyung Jun Cho, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Mineo Hiramatsu, and Masaru Hori

    Jpn. J. Appl. Phys.   Vol. 53   page: 040307   2014.3

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    DOI: 10.7567/JJAP.53.040307

  278. Nanostructure modification to carbon nanowall surface employing hydrogen peroxide solution Reviewed

    Hironao Shimoeda, Hiroki Kondo, Kenji Ishikawa, Mineo Hiramatsu, Makoto Sekine, and Masaru Hori

    Jpn. J. Appl. Phys.   Vol. 53   page: 040305   2014.3

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    DOI: 10.7567/JJAP.53.040305

  279. Spatial distribution of absolute atomic oxygen density of a non-equilibrium atmospheric pressure planar plasma jet Reviewed

    Fengdong Jia, Kenji Ishikawa, Keigo Takeda, Hiroyuki Kano, Jagath Kularatne, Hiroki Kondo, Makoto Sekine and Masaru Hori

    Plasma Source Sci Technol.   Vol. 23   page: 025004   2014.3

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1088/0963-0252/23/2/025004

  280. Chemical Reactions during Plasma-enhanced Atomic Layer Deposition of SiO2 Films employing aminosilane and O2/Ar plasma at 50 C Reviewed

    Lu Yi, Akiko Kobayashi, H. Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 53   2013.12

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    DOI: 10.7567/JJAP.53.

  281. Density Control of Carbon Nanowalls Grown by CH4/H2 plasma and Their Electrical Properties Reviewed

    Hyung Jun Cho, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Mineo Hiramatsu, and Masaru Hori

    Carbon   Vol. 66   2013.12

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    DOI: 10.1016/j.carbon.2013.11.014

  282. Effect of Indirect Nonequilibrium Atmospheric Pressure Plasma on Anti-proliferative Activity against Chronic Chemo-resistant Ovarian Cancer Cells in vitro and in vivo Reviewed

    Fumi Utsumi, Hiroaki Kajiyama, Kae Nakamura, Hiromasa Tanaka, Masaaki Mizuno, Kenji Ishikawa, Hiroki Kondo, Hiroyuki Kano, Masaru Hori, and Fumitaka Kikkawa

    PLOS One   Vol. 8   page: e81576   2013.12

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    DOI: 10.1371/journal.pone.0081576

  283. Oxidation mechanism of Penicillium digitatum spores through neutral oxygen radicals Reviewed

    Hiroshi Hashizume, Takayuki Ohta, Keigo Takeda, Kenji Ishikawa, Masaru Hori, Masafumi Ito

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 53   page: 010209   2013.12

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    DOI: 10.7567/JJAP.53.010209

  284. High H Radical Density Produced by 1-m-Long Atmospheric Pressure Microwave Plasma System Reviewed

    Hitoshi Itoh, Yusuke Kubota, Yusaku Kashiwagi, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Hirotaka Toyoda, and Masaru Hori

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52   page: 11NE01   2013.11

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    DOI: 10.7567/JJAP.52.11NE01

  285. Field emission of nano-organic-rods armored with metal nanoparticles Reviewed

    Toshiya Suzuki, Kenji Ishikawa, Makoto Sekine, Keigo Takeda, Hiroki Kondo, and Masaru Hori

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 52   page: 120203   2013.11

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    DOI: 10.7567/JJAP.52.120203

  286. Effect of gas flow on atomic radical transportation in AC Excited Non-equilibrium Atmospheric Pressure Plasma jet Reviewed

    Keigo Takeda, Masanori Kato, Kenji Ishikawa, Hiroki Kondo, Hiroyuki Kano, Makoto Sekine, and Masaru Hori

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 46   page: 464006   2013.10

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    DOI: 10.1088/0022-3727/46/46/464006

  287. Highly Precise and Rapid Measurements on Substrate Temperature Using Frequency Domain Low Coherence Interferometer Reviewed

    Takayoshi Tsutsumi, Takayuki Ohta, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori, and Masafumi Ito

    APPLIED PHYSICS LETTERS   Vol. 101   page: 182102   2013.10

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    DOI: 10.1063/1.4827426

  288. Inactivation effects of neutral reactive-oxygen species on Penicillium digitatum spores using non-equilibrium atmospheric-pressure oxygen radical source Reviewed

    Hiroshi Hashizume, Takayuki Ohta, Jia Fengdong, Keigo Takeda,Kenji Ishikawa,Masaru Hori, and Masafumi Ito

    APPLIED PHYSICS LETTERS   Vol. 101   page: 53708   2013.10

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    DOI: 10.1063/1.4824892

  289. Formation of Nanoporous Features, Flat Surfaces, or Crystallographically Oriented Etched Profiles by the Si Chemical Dry Etching Using the Reaction of F2 + NO -> F + FNO at an Elevated Temperature Reviewed

    Satomi Tajima, Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    JOURNAL OF PHYSICAL CHEMISTRY C   Vol. 117 ( 40 ) page: 20810-20818   2013.9

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    DOI: 10.1021/jp4084794

  290. Atomic Oxygen Etching from the Top Edges of Carbon Nanowalls Reviewed

    Hironao Shimoeda, Hiroki Kondo, Kenji Ishikawa, Mineo Hiramatsu, Makoto Sekine, and Masaru Hori

    APPLIED PHYSICS EXPRESS   Vol. 6   page: 095201   2013.8

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    DOI: 10.7567/APEX.6.095201

  291. A Development of Atmospheric Pressure Plasma Equipment and Its Applications for Treatment of Ag Films Formed from Nano-Particle Ink Reviewed

    Hitoshi Itoh, Y. Kubota, Y. Kashiwagi, K. Takeda, Kenji Ishikawa, H. Kondo, M. Sekine, H. Toyoda, and M. Hori

    J. Phys.: Conf. Ser.   Vol. 441   page: 12019   2013.6

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    DOI: 10.1088/1742-6596/441/1/012019

  292. A novel fast and flexible technique of radical kinetic behavior investigation based on pallet for plasma evaluation structure and numerical analysis Reviewed

    Malinowski, Arkadiusz; Takeuchi, Takuya; Chen, Shang; Suzuki, Toshiya; Ishikawa, Kenji; Sekine, Makoto; Hori, Masaru; Lukasiak, Lidia; Jakubowski, Andrzej

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   Vol. 46   page: 265201   2013.6

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    DOI: 10.1088/0022-3727/46/26/265201

  293. Surface morphology on high-temperature plasma-etched gallium nitride Reviewed

    Ryosuke Kometani, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori

    Trans. Mater. Res. Soc. Jpn.   Vol. 38   page: 325   2013.6

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  294. Photoluminescence study of plasma-induced damage of GaInN single quantum well Reviewed

    Shouichiro Izumi, Masaki Minami, Michiru Kamada, Tetsuya Tatsumi, Atsushi A. Yamaguchi, Kenji Ishikawa, Masaru Hori, and Shigetaka Tomiya

    Japanese Journal of Applied Physics   Vol. 52 ( 8S ) page: 08JL09   2013.5

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    DOI: 10.7567/JJAP.52.08JL09

  295. Dissociations of C5F8 and C5HF7 in Etching Plasma Reviewed

    Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 5   page: 05EB02   2013.5

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    DOI: 10.7567/JJAP.52.05EB02

  296. Wavelength dependence of photon-induced interface defects in hydrogenated silicon nitride/Si structure during plasma etching processes Reviewed

    Masanaga Fukasawa, Hiroyasu Matsugai, Takayoshi Honda, Yudai Miyawaki, Yusuke Kondo, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Kazunori Nagahata, Fumikatsu Uesawa, Masaru Hori, Tetsuya Tatsumi

    JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 5   page: 05ED01   2013.5

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    DOI: 10.7567/JJAP.52.05ED01

  297. Surface analysis of gallium nitride (GaN) at elevated substrate temperature Reviewed

    Ryosuke Kometani, Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori

    APPLIED PHYSICS EXPRESS   Vol. 6   page: 056201   2013.4

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    DOI: 10.7567/APEX.6.056201

  298. Supercritical Fluid Deposition of High-Density Nanoparticles of Photo-Catalytic TiO2 on Carbon Nanowalls Reviewed

    Takeyoshi Horibe, Hiroki Kondo, Kenji Ishikawa, Hiroyuki Kano, Makoto Sekine, Mineo Hiramatsu, and Masaru Hori

    Appl. Phys. Express   Vol. 6   page: 045103   2013.4

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    DOI: 10.7567/APEX.6.045103

  299. A Room Temperature Si Etching in NO/F2 Gas Chemistry and Its Reaction Mechanism Reviewed

    Satomi Tajima, Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    J. Phys. Chem. C   Vol. 117 ( 10 ) page: 5118–5125   2013.2

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    DOI: 10.1021/jp3119132

  300. Plasma-activated medium selectively kills glioblastoma brain tumor cells by downregulating a survival signaling molecule, AKT kinase Reviewed

    Hiromasa Tanaka, Masaaki Mizuno, Kenji Ishikawa, Kae Nakamura, Hiroaki Kajiyama, Hiroyuki Kano, Fumitaka Kikkawa, and Masaru Hori

    Plasma Medicine   Vol. 3   page: 1   2013.2

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    DOI: 10.1615/PlasmaMed.2012006275

  301. Surface roughness development on ArF-photoresist studied by beam-irradiation of CF4 plasma Reviewed

    Takuya Takeuchi, Kenji Ishikawa, Yuichi Setsuhara, Hiroki Kondo, Keigo Takeda, Makoto Sekine, Masaru Hori

    J. Phys. D: Appl. Phys.   Vol. 46   page: 102001   2013.2

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    DOI: 10.1088/0022-3727/46/10/102001

  302. Etching-Enhancement Followed by Nitridation on Low-k SiOCH Film in Ar/C5F10O Plasma Reviewed

    Yudai Miyawaki, Emi Shibata, Yusuke Kondo, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Hidekazu Okamoto, Makoto Sekine, and Masaru Hori

    Japanese Journal of Applied Physics   Vol. 52 ( 2 ) page: 020204   2013.1

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    DOI: 10.7567/JJAP.52.020204

  303. Impact of hydrogen radical injection plasma on fabrication of microcrystalline silicon thin film for solar cells Reviewed

    Yusuke Abe, Sho Kawashima, Atsushi Fukushima, Ya Lu, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    J. Appl. Phys.   Vol. 113 ( 2 ) page: 033304   2013.1

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    DOI: 10.1063/1.4778608

  304. Highly selective etching of SiO2 over Si3N4 and Si in capacitivlly coupled plasma employing C5HF7 gas Reviewed

    Yudai Miyawaki, Yusuke Kondo, Makoto Sekine, Kenji Ishikawa, Toshio Hayashi, Keigo Takeda, Hiroki Kondo, and Masaru Hori

    Jpn. J. Appl. Phys.   Vol. 52 ( 1 ) page: 016201   2013.1

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    DOI: 10.7567/JJAP.52.016201

  305. Development of high-density nitrogen radical source for low mosaicity and high rate growth of InGaN films in molecular beam epitaxy Reviewed

    Shang Chen, Yohjiro Kawai, Hiroki Kondo, Kenji Ishikawa, Keigo Takeda, Hiroyuki Kano, Makoto Sekine, Hiroshi Amano, and Masaru Hori

    Jpn. J. Appl. Phys.   Vol. 52 ( 1 ) page: 021001   2013.1

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    DOI: 10.7567/JJAP.52.021001

  306. Development of the sputtering yields of ArF photoresist after the onset of argon ion bombardment Reviewed

    Takuya Takeuchi, Carles Corbella, Simon Grosse-Kreul, Achim von Keudell, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    J. Appl. Phys.   Vol. 113 ( 1 ) page: 014306   2013.1

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    DOI: 10.1063/1.4772996

  307. Surface loss probability of H radicals on silicon thin films in SiH4/H2 plasma Reviewed

    Yusuke Abe, Atsushi Fukushima, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    J. Appl. Phys.   Vol. 113 ( 1 ) page: 013303   2013.1

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    DOI: 10.1063/1.4773104

  308. Individual roles for atoms and ions during hydrogen atom passivation of surface-defects on GaN created by plasma-etching Reviewed

    Shang Chen, Kenji Ishikawa, Yi Lu, Ryosuke Kometani, Hiroki Kondo, Yutaka Tokuda, Takashi Egawa, Hiroshi Amano, Makoto Sekine, and Masaru Hori

    Jpn. J. Appl. Phys.   Vol. 51 ( 11 ) page: 111002-1:6   2012.10

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    DOI: 10.1143/JJAP.51.111002

  309. Critical flux ratio of hydrogen radical to fi lm precursor in microcrystalline silicon deposition for solar cells Reviewed

    Yusuke Abe, Atsushi Fukushima, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    Appl. Phys. Lett.   Vol. 101 ( 17 ) page: 172109-1:4   2012.10

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    DOI: 10.1063/1.4764065

  310. Decomposition Removal of the Polymers for Resist Material by the Hydrogen Radical Generated Using Tungsten Hot-Wire Catalyzer Reviewed Open Access

    Yu Arai, Makoto Watanabe, Akihiko Kono, Tadaaki Yamagishi, Kenji Ishikawa, Masaru Hori, Hideo Horibe

    Kobunshi Ronbunshu   Vol. 69 ( 6 ) page: 266 - 273   2012.9

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    DOI: 10.1295/koron.69.266

    Open Access

  311. As-grown deep-level defects in n-GaN grown by metal-organic chemical vapor deposition on freestanding GaN Reviewed

    Shang Chen, Unhi Honda, Tatsunari Shibata, Toshiya Matumura, Yutaka Tokuda, Kenji Ishikawa, Masaru Hori, Hiroyuki Ueda, Tsutomu Uesugi, and Tetsu Kachi

    J. Appl. Phys.   Vol. 112 ( 5 ) page: 053513-1:4   2012.9

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    DOI: 10.1063/1.4748170

  312. Real-time In Situ Electron Spin Resonance Measurements on Fungal Spores of Penicillium digitatum during Exposure of Oxygen Plasmas Reviewed

    Kenji Ishikawa, Hiroko Moriyama, Hiromasa Tanaka, Kazuhiro Tamiya, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Sachiko Iseki, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori

    Appl. Phys. Lett.   Vol. 101 ( 1 ) page: 013704-1:4   2012.7

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    DOI: 10.1063/1.4733387

  313. Photoluminescence recovery by in-situ exposure of plasma-damaged n-GaN to atomic hydrogen at room temperature Reviewed

    Shang Chen, Yi Lu, Ryosuke Kometani, Kenji Ishikawa, Hiroki Kondo, Yutaka Tokuda, Makoto Sekine, and Masaru Hori

    AIP advance   Vol. 2 ( 2 ) page: 022149-1:6   2012.6

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    DOI: 10.1063/1.4729448

  314. Ultrahigh-Speed Synthesis of Nanographene Using Alcohol In-Liquid Plasma Reviewed

    Tatsuya Hagino, Hiroki Kondo, Kenji Ishikawa, Hiroyuki Kano, Makoto Sekine, Masaru Hori

    Appl. Phys. Express   Vol. 5 ( 3 ) page: 035101-1:3   2012.3

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    DOI: 10.1143/APEX.5.035101

  315. Quantum Chemical Investigation of Si Chemical Dry Etching by Flowing NF3 into N2 Downflow Plasma Reviewed

    Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, Masaru Hori, Akihiro Kono, and Koukou Suu

    Jpn. J. Appl. Phys.   Vol. 51 ( 2 ) page: 026505-1:5   2012.2

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    DOI: 10.1143/JJAP.51.026505

  316. Direct current superposed dual-frequency capacitively-coupled-plasma in selective etch of SiOCH over SiC Reviewed

    Tsuyoshi Yamaguchi, Tetsuya Komuro, Chishio Koshimizu, Seigo Takashima, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    J. Phys. D: Appl. Phys.   Vol. 45 ( 2 ) page: 025203-1:7   2012.1

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    DOI: 10.1088/0022-3727/45/2/025203

  317. Vacuum Ultraviolet and Ultraviolet Radiation-Induced Effect of Hydrogenated Silicon Nitride Etching: Surface Reaction Enhancement and Damage Generation Reviewed

    Masanaga Fukasawa, Yudai Miyawaki, Yusuke Kondo, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Hiroyasu Matsugai, Takayoshi Honda, Masaki Minami, Fumikatsu Uesawa, Masaru Hori, and Tetsuya Tatsumi

    Jpn. J. Appl. Phys.   Vol. 51 ( 2 ) page: 026201-1:7   2012.1

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    DOI: 10.1143/JJAP.51.026201

  318. Feature Profiles on Plasma Etch of Organic Films by a Temporal Control of Radical Densities and Real-Time Monitoring of Substrate Temperature Reviewed

    Hiroshi Yamamoto, Hiroki Kuroda, Masafumi Ito, Takayuki Ohta, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori

    Jpn. J. Appl. Phys.   Vol. 51 ( 1 ) page: 016202-1:6   2012.1

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    DOI: 10.1143/JJAP.51.016202

  319. Quantum Chemical Investigation for Chemical Dry Etching of SiO2 by Flowing NF3 into H2 Downflow Plasma Reviewed

    Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, Masaru Hori, Akihiro Kono, and Koukou Suu

    Jpn. J. Appl. Phys.   Vol. 51 ( 1 ) page: 016201-1:6   2012.1

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    DOI: 10.1143/JJAP.51.016201

  320. Electron Spin Resonance (ESR) Observation of Radicals on Biological Organism Interacted with Plasmas Reviewed

    Kenji Ishikawa, Hiroko Moriyama, Kazuhiro Tamiya, Hiroshi Hashizume, Takayuki Ohta, Masafumi Ito, Sachiko Iseki, Hiromasa Tanaka, Keigo Takeda, Hiroki Kondo, Makoto Sekine and Masaru Hori

    MRS Online Proceedings Library   Vol. 1469   2012

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    DOI: 10.1557/opl.2012.928

  321. Chemical Bond Modification in Porous SiOCH Films by H2 and H2/N2 Plasmas Investigated by in situ Infrared Reflection Absorption Spectroscopy (IR-RAS) Reviewed

    Hiroshi Yamamoto, Kohei Asano, Kenji Ishikawa, Makoto Sekine, Hisataka Hayashi, Itsuko Sakai, Tokuhisa Ohiwa, Keigo Takeda, Hiroki Kondo, and Masaru Hori

    Journal of Applied Physics   Vol. 110 ( 12 ) page: 123301   2011.12

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    DOI: 10.1063/1.3671547

  322. Inactivation of Penicillium digitatum Spores by a High-Density Ground-State Atomic Oxygen-Radical Source Employing an Atmospheric-Pressure Plasma Reviewed

    Sachiko Iseki, Hiroshi Hashizume, Fengdong Jia, Keigo Takeda, Kenji Ishikawa, Takayuki Ohta, Masafumi Ito, and Masaru Hori

    Appl. Phys. Express   Vol. 4   page: 116201   2011.11

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    DOI: 10.1143/APEX.4.116201

  323. Impacts of CF+, CF2+, CF3+ and Ar Ion Beam Bombardment with energies from 100eV and 400eV on Surface Modification of Photoresist Reviewed

    Takuya Takeuchi, Shinpei Amasaki, Hiroki Kondo, Kenji Ishikawa, Hirotaka Toyoda, Makoto Sekine, Song-Yun Kang, Ikuo Sawada, and Masaru Hori

    Jpn. J. Appl. Phys.   Vol. 50 ( 8 ) page: 08JE05-1:5   2011.8

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    DOI: 10.1143/JJAP.50.08JE05

  324. Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma Reviewed

    Masaki Minami, Shigetaka Tomiya, Kenji Ishikawa, Ryosuke Matsumoto, Shang Chen, Masanaga Fukasawa, Fumikatsu Uesawa, Makoto Sekine, Masaru Hori, and Tetsuya Tatsumi

    Jpn. J. Appl. Phys.   Vol. 50 ( 8 ) page: 08JE03-1:4   2011.8

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    DOI: 10.1143/JJAP.50.08JE03

  325. Spatial Distributions of Electron, CF, CF2 Radical Densities and Gas Temperature in dc-Superposed Dual- Frequency- Capacitively-Coupled Plasma Etch Reactor Employing c-C4F8/N2/Ar gas Reviewed

    Tsuyoshi Yamaguchi, Tetsuya Kimura, Chishio Koshimizu, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine and Masaru Hori

    Jpn. J. Appl. Phys.   Vol. 50 ( 5 ) page: 0   2011.5

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    DOI: 10.1143/JJAP.50.056101

  326. Synergistic Formation of Radicals with Irradiation with both Vacuum Ultraviolet and Atomic Hydrogen: a Real time in situ Electron-Spin-Resonance Study Reviewed Open Access

    Kenji Ishikawa, Naoya Sumi, Akihiko Kono, Hideo Horibe, Keigo Takeda, Hiroki Kondo, Makoto Sekine, and Masaru Hori

    J. Phys. Chem. Lett.   Vol. 2   page: 1278 - 1281   2011.5

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    DOI: 10.1021/jz2002937

  327. H2/N2 Plasma Damage on Porous Dielectric SiOCH Film Evaluated by In-situ Film Characterization and Plasma Diagnostics Reviewed

    Hiroshi Yamamoto, Keigo Takeda, Kenji Ishikawa, Masafumi Ito, Makoto Sekine, Masaru Hori, Takeshi Kaminatsui, Hisataka Hayashi, Itsuko Sakai, and Tokuhisa Ohiwa

    J. Appl. Phys.   Vol. 109   page: 084112:1-8   2011.4

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    DOI: 10.1063/1.3562161

  328. Dissociation Channels of c-C4F8 to CF2 Radical in Reactive Plasma Reviewed

    Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, Masaru Hori, Akihiro Kono, and Koukou Suu

    Jpn. J. Appl. Phys.   Vol. 50   page: 036203:1-4   2011.3

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    DOI: 10.1143/JJAP.50.036203

  329. Laser Scattering Diagnosis of a 60-Hz Non-Equilibrium Atmospheric Pressure Plasma Jet Reviewed

    Fengdong Jia, Naoya Sumi, Kenji Ishikawa, Hiroyuki Kano, Hirotoshi Inui, Jagath Kularatne, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Akihiro Kono, and Masaru Hori

    Appl. Phys. Express   Vol. 4   page: 026101:1-3   2011.1

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    DOI: 10.1143/APEX.4.026101

  330. Behaviors of Absolute Densities of N, H and NH3 at Remote Region of High Density Radical Source Employing N2-H2 Mixture Plasmas Reviewed

    Shang Chen, Hiroki Kondo, Kenji Ishikawa, Keigo Takeda, Makoto Sekine, Hiroyuki Kano, Shoji Den and Masaru Hori

    Jpn. J. Appl. Phys.   Vol. 50   page: 01AE03:1-4   2011.1

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    DOI: 10.1143/JJAP.50.01AE03

  331. Hydrophobic Treatment of Organics against Glass Employing nonequilibrium Atmospheric Pressure Pulsed Plasmas with a Mixture of CF4 and N2 Gases Reviewed

    Hirotoshi Inui, Keigo Takeda, Kenji Ishikawa, Takuya Yara, Tsuyoshi Uehara, Makoto Sekine and Masaru Hori

    J. Appl. Phys.   Vol. 109   page: 013310:1-6   2011.1

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    DOI: 10.1063/1.3525246

  332. Measurement of Hydrogen Radical Density and its Impact on Reduction of Copper Oxide in Atmospheric-Pressure Remote Plasma Using H2 and Ar Mixture Gases

    Hirotoshi Inui, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Sekine Makoto, Hiroyuki Kano, Naofumi Yoshida, and Masaru Hori

    Appl. Phys. Express   Vol. 3   page: 126101:1-3   2010.12

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    DOI: 10.1143/APEX.3.126101

  333. Etching Damage in Diamond Studied Using an Energy-Controlled Oxygen Ion Beam Reviewed

    Yuuichi Yamazaki, Kenji Ishikawa, Norikazu Mizuochi, and Satoshi Yamasaki

    Jpn. J. Appl. Phys.   Vol. 46 ( 1 ) page: 60-64   2007.1

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    DOI: 10.1143/JJAP.46.60

  334. Reaction mechanism of low-temperature damageless cleaning of Cu2O by HCOOH Reviewed

    Masakazu Sugiyama, Isao Gunji, Kenji Ishikawa, Masafumi Nakaishi, Kouichi Yamashita, and Takayuki Ohba

    Proc. on Advanced Metallization Conference 2006 (AMC 2006), (October 10-17, 2006, San Diego, CA, USA)     page: 111 - 116   2006.10

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  335. Defect creation in diamond by hydrogen plasma treatment at room temperature Reviewed

    Yuuichi Yamazaki, Kenji Ishikawa, Seiji Samukawa, and Satoshi Yamasaki

    Physica B   Vol. 376/377   page: 327-330   2006.6

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    DOI: 10.1016/j.physb.2005.12.084

  336. Structure of diamond surface defective layer damaged by hydrogen ion beam exposure Reviewed

    Yuuichi Yamazaki, Kenji Ishikawa, Norikazu Mizuochi, and Satoshi Yamasaki

    Diamond Related Mater.   Vol. 15 ( 4-8 ) page: 703-706   2006.5

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    DOI: 10.1016/j.diamond.2005.12.021

  337. Surface Reactions During Etching of Organic Low-k Films by Plasma of N2 and H2 Reviewed

    Kenji Ishikawa, Yoshikazu Yamaoka, Moritaka Nakamura, Yuichi Yamazaki, Satoshi Yamasaki, Yasushi Ishikawa, and Seiji Samukawa

    J. Appl. Phys.   Vol. 99 ( 8 ) page: 083305:1-6   2006.5

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    DOI: 10.1063/1.2191567

  338. Effcient Reduction of Standby Leakage Current in LSIs for Use in Mobile Devices Reviewed

    Hiroshi Kudo, Kenji Ishikawa, Yasuyoshi Mishima, et al.

    Jpn. J. Appl. Phys.   Vol. 45 ( 4B ) page: 3150-3153   2006.4

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    DOI: 10.1143/JJAP.45.3150

  339. 理想的な界面形成を追求 半導体のドライ洗浄技術 Invited

    石川健治、安立なつ美

    工業材料   Vol. 54   page: 1   2006

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  340. Structural change in diamond by hydrogen plasma treatment at room temperature Reviewed

    Yuuichi Yamazaki, Kenji Ishikawa, Norikazu Mizuochi, and Satoshi Yamasaki

    Diamond Related Mater.   Vol. 14 ( 11-12 ) page: 1939-1942   2005.10

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    DOI: 10.1016/j.diamond.2005.09.011

  341. In vacuo measurements of dangling bonds created during Ar-diluted fluorocarbon plasma etching of silicon dioxide films Reviewed

    Kenji Ishikawa, Mitsuru Okigawa, Yasushi Ishikawa, Seiji Samukawa, and Satoshi Yamasaki

    Appl. Phys. Lett.   Vol. 86   page: 264104:1-3   2005.6

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    DOI: 10.1063/1.1978982

  342. Mass-analyzed CFx+ (x=1,2,3) ion beam study on selectivity of SiO2-to-SiN etching and a-C:F film deposition Reviewed

    Ken-ichi Yanai, Kazuhiro Karahashi, Kenji Ishikawa, and Moritaka Nakamura

    J. Appl. Phys.   Vol. 97 ( 5 ) page: 053302:1-6   2005.2

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    DOI: 10.1063/1.1854726

  343. Etching yield of SiO2 irradiated by F+ CFx+ (x=1,2,3) ion with energies from 250 to 2000 eV Reviewed

    Kazuhiro Karahashi, Ken-ichi Yanai, Kenji Ishikawa, Hideo Tsuboi, Kazuaki Kurihara, and Moritaka Nakamura

    J. Vac. Sci. Technol. A   Vol. 22 ( 4 ) page: 1166   2004.6

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    DOI: 10.1116/1.1761119

  344. ドライ洗浄技術-半導体製造- Reviewed

    伊藤隆司、杉野林志、石川健治

    精密工学会誌   Vol. 70   page: 894   2004

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    DOI: 10.2493/jjspe.70.894

  345. Transitional change to amorphous fluorinated carbon film deposition under energetic irradiation of mass-analyzed carbon mono-fluoride ions on silicon dioxide surfaces Reviewed

    Kenji Ishikawa, Kazuhiro Karahashi, Hideo Tsuboi, Ken-ichi Yanai, and Moritaka Nakamura

    J. Vac. Sci. Technol. A   Vol. 21   page: L1-L3   2003.6

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1116/1.1578653

  346. Surface and gas-phase observations of Ar diluted c-C4F8 plasma by using real-time infrared spectroscopy and planar laser-induced fluorescence Reviewed

    Kenji Ishikawa, Shigenori Hayashi, and Makoto Sekine

    J. Appl. Phys.   Vol. 93 ( 3 ) page: 1403-1408   2003.2

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    DOI: 10.1063/1.1536740

  347. Vapor Treatment of Copper Surface Using Organic Acids Reviewed

    Kenji Ishikawa, Teruo Yagishita and Moritaka Nakamura

    MRS Proceedings   Vol. 766   2003

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    DOI: 10.1557/PROC-766-E3.28

  348. In-vacuo electron spin resonance study on amorphous fluorinated carbon films for understanding of surface chemical reactions in plasma etching Reviewed

    Kenji Ishikawa, Shoji Kobayashi, Mitsuru Okigawa, Makoto Sekine, Satoshi Yamasaki, Tetsuji Yasuda, and Junichi Isoya

    Appl. Phys. Lett.   Vol. 81 ( 10 ) page: 1773-1775   2002.9

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    DOI: 10.1063/1.1505121

  349. Planar laser-induced fluorescence of fluorocarbon radicals in oxide etch process plasma Reviewed

    Shigenori Hayashi, Kenji Ishikawa, and Makoto Sekine

    Jpn. J. Appl. Phys.   Vol. 41 ( 4A ) page: 2207-2212   2002.4

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    DOI: 10.1143/JJAP.41.2207

  350. Direct observation of surface dangling bonds during plasma process: chemical reactions during H2 and Ar plasma treatments Reviewed

    Satoshi Yamasaki, Ujjwal Das, and Kenji Ishikawa

    Thin Solid Films   Vol. 407 ( 1-2 ) page: 139-143   2002.2

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    DOI: 10.1016/S0040-6090(02)00028-7

  351. Early-stage modification of a silicon oxide surface in fluorocarbon plasma for selective etching over silicon Reviewed

    Kenji Ishikawa, and Makoto Sekine

    J. Appl. Phys.   Vol. 91 ( 3 ) page: 1661-1666   2002.2

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    DOI: 10.1063/1.1430882

  352. In-situ time-resolved infrared spectroscopic study of silicon-oxide surface during selective etching over silicon in fluorocarbon plasma Reviewed

    Kenji Ishikawa, and Makoto Sekine

    Jpn. J. Appl. Phys.   Vol. 39   page: 6990-6995   2000.12

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    DOI: 10.1143/JJAP.39.6990

  353. Asymmetric peak line shape on infrared dielectric function spectra of thermally grown silicon dioxide films Reviewed

    Kenji Ishikawa, Kunihiro Suzuki, and Shigeru Okamura

    J. Appl. Phys.   Vol. 88   page: 7150-7156   2000

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    DOI: 10.1063/1.1325377

  354. Thickness-deconvolved structural properties of thermally grown silicon dioxide films Reviewed

    Kenji Ishikawa, Hiroki Ogawa, and Shuzo Fujimura

    J. Appl. Phys.   Vol. 86   page: 3472-3474   1999

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    DOI: 10.1063/1.371232

  355. Contribution of interface roughness to infrared spectra of thermally grown silicon dioxide films Reviewed

    Kenji Ishikawa, Hiroki Ogawa, and Shuzo Fujimura

    J. Appl. Phys.   Vol. 85   page: 4076-4082   1999

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    DOI: 10.1063/1.370313

  356. Analysis of native oxide growth process on an atomically flattened and hydrogen terminated Si(111) surface in pure water using fourier transformed infrared reflection absorption spectroscopy Reviewed

    Shuzo Fujimura, Kenji Ishikawa, and Hiroki Ogawa

    J. Vac. Sci. Technol. A   Vol. 16 ( 1 ) page: 375-381   1998.1

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    DOI: 10.1116/1.581008

  357. Dependence of TO and LO mode frequency of thermally grown silicon dioxide films on annealing temperature Reviewed

    Kenji Ishikawa, Yuji Uchiyama, Hiroki Ogawa, and Shuzo Fujimura

    Appl. Surf. Sci.   Vol. 117/118   page: 212-215   1997.6

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    DOI: 10.1016/S0169-4332(97)80081-5

  358. Infrared spectroscopy study of the RCA standard clean chemical oxides and their sequencing Reviewed

    Carlos Inomata, Hiroki Ogawa, Kenji Ishikawa, and Shuzo Fujimura

    J. Electrochem. Soc.   Vol. 143 ( 9 ) page: 2995-3000   1996.9

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    DOI: 10.1149/1.1837138

  359. Initial stage of native oxide growth on hydrogen terminated silicon (111) surfaces Reviewed

    Hiroki Ogawa, Kenji Ishikawa, Carlos Inomata, and Shuzo Fujimura

    J. Appl. Phys.   Vol. 79 ( 1 ) page: 472-477   1996.1

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    DOI: 10.1063/1.360853

  360. Observation of Oxygen Exposed Hydrogen Terminated Silicon Surface Reviewed

    Hiroki Ogawa, Kenji Ishikawa, M. Aoki, Shuzo Fujimura, N. Ueno, Yasuhiro Horiike, Y. Harada

    The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 3, edited by H.Z. Massoud, E.H. Poindexter, and C.R. Helms, (The Electrochemical Society, NJ)     page: 428   1996

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  361. Effects of Dissolved Oxygen in HF Solution on Silicon Surface Morphology Reviewed

    Hiroki Ogawa, Kenji Ishikawa, Miki T. Suzuki, Yuka Hayami, and Shuzo Fujimura

    Jpn. J. Appl. Phys.   Vol. 34 ( 2B ) page: 732-736   1995.2

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    DOI: 10.1143/JJAP.34.732

  362. FT-IR-RAS analysis of the structure of the SiO2/Si interface Reviewed

    Kenji Ishikawa, Hiroki Ogawa, Carlos Inomata, Shuzo Fujimura, and Haruhisa Mori

    Control of Semiconductor Interfaces, edited by I. Ohdomari, M. Oshima and A. Hiraki, (Elsevier Science B.V.)     page: 447   1994

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    DOI: 10.1016/B978-0-444-81889-8.50082-1

  363. Native Oxide Characterization on Silicon Surfaces Reviewed

    Hiroki Ogawa, Carlos Inomata, Kenji Ishikawa, Shuzo Fujimura, and Haruhisa Mori

    Control of Semiconductor Interfaces, edited by I. Ohdomari, M. Oshima and A. Hiraki, (Elsevier Science B.V.)     page: 383   1994

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    DOI: 10.1016/B978-0-444-81889-8.50071-7

  364. Observation of Thin SiO2 Films using IR-RAS Reviewed

    Shuzo Fujimura, Kenji Ishikawa, and Haruhisa Mori

    The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2, edited by C. R. Helms and B. E. Deal, (Plenum Press)     page: 91   1993

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    DOI: 10.1007/978-1-4899-1588-7_11

  365. New Analytical Method of SiO2 Structure by Infrared Reflection Absorption Spectroscopy (IR-RAS) Reviewed

    Kenji Ishikawa, Hiroki Ogawa, Carlos Inomata, Shuzo Fujimura and Haruhisa Mori

    MRS Proceedings   Vol. 318   page: 425-431   1993

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    DOI: 10.1557/PROC-318-425

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Books 13

  1. エッチングの高度化と3次元構造の作製技術

    石川健治( Role: Joint author ,  第1章 加工技術の基礎と高度化,第3節 ドライエッチングの基礎と高度化)

    S&T出版  2025.6 

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    Language:Japanese Book type:Scholarly book

  2. シリコンと化合物半導体の超精密・微細加工プロセス技術 ―工程別加工技術の基礎と最新動向―

    石川健治( Role: Contributor ,  第14章 「GaN系デバイスに向けたプラズマエッチング技術」)

    シーエムシー出版  2024.6  ( ISBN:978-4-7813-1757-1

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    Language:Japanese Book type:Scholarly book

    Other Link: https://www.plasma.engg.nagoya-u.ac.jp/ishikawa/?Book09

  3. Control of Plasma Behavior and Surface Reaction in High Aspect Ratio Etching

    Kenji Ishikawa( Role: Joint author ,  Development Trend of Dry Etching Technology and Process Control)

    2023.9  ( ISBN:978-4-86104-982-8

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    Other Link: https://www.plasma.engg.nagoya-u.ac.jp/ishikawa/?Book08

  4. Chapter 2. Physical and chemical basis of non-thermal plasma. In: "Plasma Medical Science"

    Kenji Ishikawa( Role: Contributor ,  Chapter 2-1, 2-4, 2-5, 2-6, and 2-8. )

    Academic Press  2018.7  ( ISBN:9780128150054

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    Total pages:485   Language:English Book type:Scholarly book

    Plasma Medical Science describes the progress that has been made in the field over the past five years, illustrating what readers must know to be successful. As non-thermal, atmospheric pressure plasma has been applied for a wide variety of medical fields, including wound healing, blood coagulation, and cancer therapy, this book is a timely resource on the topics discussed.

    Other Link: https://www.amazon.co.jp/gp/product/0128150041

  5. Chapter 5. "Plasma Diagnostics" In: "Cold Plasma in Food and Agriculture, Fundamentals and Applications"

    Kenji Ishikawa( Role: Contributor)

    Academic Press  2016.8  ( ISBN: 9780128013656

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    Cold Plasma in Food and Agriculture: Fundamentals and Applications is an essential reference offering a broad perspective on a new, exciting, and growing field for the food industry. Written for researchers, industry personnel, and students interested in nonthermal food technology, this reference will lay the groundwork of plasma physics, chemistry, and technology, and their biological applications.

    Other Link: https://www.amazon.co.jp/gp/product/0128013656

  6. 7.2節 表面計測法 In: プラズマプロセス技術

    石川健治,堀勝( Role: Contributor)

    森北出版  2016.5  ( ISBN:978-4-627-77561-9

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    Language:Japanese

    Other Link: https://www.amazon.co.jp/gp/product/462777561X

  7. 化学便覧 応用化学編 第7版 7.5.2「ドライエッチング」

    堀勝、石川健治( Role: Sole author)

    丸善  2014.1  ( ISBN:978-4-621-08759-6

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    Language:Japanese

  8. ArFフォトレジストのプラズマエッチング技術

    石川健治,堀勝( Role: Joint author)

    技術情報協会  2013.7 

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    Language:Japanese

  9. ドライエッチング In: 「ドライプロセスによる表面処理・薄膜形成(表面技術協会編)」

    石川健治,堀勝( Role: Joint author)

    丸善  2013.5  ( ISBN:978-4-339-04631-1

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    Language:Japanese

    Other Link: https://www.amazon.co.jp/gp/product/4339046310

  10. 層間絶縁膜の成膜とエッチング

    石川健治,堀勝( Role: Joint author)

    エヌティエス出版  2012.7  ( ISBN:978-4-86469-039-3

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    Language:Japanese

  11. エッチング工程の手法およびレジスト・レジストパターンへの影響

    石川健治,堀勝( Role: Joint author)

    情報機構  2011.9  ( ISBN:978-4-904080-90-0

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    Language:Japanese

  12. 半導体プロセス洗浄方法とその効果

    石川健治( Role: Joint author)

    有機汚染物質/アウトガスの発生メカニズムとトラブル対策事例集(技術情報協会)  2008 

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    Language:Japanese

  13. シリコン基板の洗浄

    石川健治( Role: Joint author)

    エレクトロニクス洗浄技術(技術情報協会)  2007 

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▼display all

Presentations 352

  1. CF4/H2プラズマによるエピタキシャル成長したSi0.7Ge0.3/Si/Si0.7Ge0.3積層膜からのSiナノシートの形成

    尾崎孝太朗,堤隆嘉,石川健治,Yamamoto Yuji,Wen Wei-Chen,牧原克典

    2025.3.17 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京理科大学野田キャンパス  

  2. エピタキシャル成長したSi0.7Ge0.3およびSi薄膜におけるH2希釈CF4ガスによるドライエッチング -基板温度依存性-

    尾崎 孝太朗、佐分利 伊吹、堤 隆嘉、石川 健治、Yamamoto Yuji、Wen Wei-Chen、牧原 克典

    2025.3.15 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京理科大学野田キャンパス  

  3. Impact of electrical stimulation and wall thickness variation on the differentiation potential of human mesenchymal stem cells cultured on SiC-coated CNWs

    第72回応用物理学会春季学術講演会  2025.3.16 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  4. Time course analysis of NO radicals in plasma-activated Ringer's lactate solution

    第72回応用物理学会春季学術講演会  2025.3.16 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  5. 酸素ラジカル活性化L-トリプトファン溶液中に生成されたキヌレニンによる線維芽細胞の増殖促進効果

    福井公輝、田島慶人、石川健治、田中宏昌、堀勝、伊藤昌文

    2025.3.16 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京理科大学野田キャンパス  

  6. 酸素ラジカル活性化インドール溶液による殺菌効果の温度依存性

    北川大慈、清水健太、渡邊拓哉、志水元亨、加藤雅士、田中宏昌、石川健治、堀勝、伊藤昌文

    2025.3.16 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京理科大学野田キャンパス  

  7. 大気圧質量分析法を用いたソラマメ種皮の酸化窒素ラジカル透過率測定

    川口幸大、塚越啓央、田中宏昌、石川健治、堀勝、伊藤昌文

    2025.3.16 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京理科大学野田キャンパス  

  8. Real-time Analysis of Neutral species spectrum Using Machine Learning

    第72回応用物理学会春季学術講演会  2025.3.17 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  9. Effects of Radical Sticking Probability on Transport in High-Aspect-Ratio Holes

    第72回応用物理学会春季学術講演会  2025.3.17 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  10. In-situ Surface Reaction Analysis during Atomic Layer Etching of TiN Irradiated by Cl Radicals at Low Temperature

    第72回応用物理学会春季学術講演会  2025.3.17 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  11. A Cyclic Etching of Platinum Thin Films by An Oxygen Plasma and A Formic Acid Vapor Treatment

    第72回応用物理学会春季学術講演会  2025.3.17 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (general)  

  12. 計算化学による1-C4F8の電子物性と解離特性

    林俊雄、石川健治、関根誠、堀勝

    2025.3.17 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京理科大学野田キャンパス  

  13. 1-C5F10分子の電子物性と解離

    林俊雄、石川健治、関根誠、堀勝

    2025.3.17 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京理科大学野田キャンパス  

  14. 酸素添加塩素プラズマによるGaN 選択エッチングの温度依存性

    中村昭平,谷出敦,木村貴弘,トラン グエン トラン,井上健一,石川健治

    2025.3.17 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京理科大学野田キャンパス  

  15. Free Radical Formation Induced by Low-temperature Plasma in Amino acids. An EPR-Spin Trapping Study

    第72回応用物理学会春季学術講演会  2025.3.15 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  16. Effects of plasma irradiation on the ascorbic acid content in Artemia International conference

    Hayato Shirata, Kenji Ishikawa, Shinichi Akiyama, Hiroshi Hashizume, Masaru Hori, and Hiromasa Tanaka

    2025.3.5 

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    Event date: 2025.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Chubu University, Aichi, Japan  

  17. Investigation of mitophagy-inducing substances and their effects on mitochondrial function in plasma-activated Ringer's lactate solution International conference

    Kohei Mori, Taishi Yamakawa, Masaru Hori, Kenji Ishikawa, and Hiromasa Tanaka

    2025.3.5 

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    Event date: 2025.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Chubu University, Aichi, Japan  

  18. Evaluation of lateral selective etching with CF4/H2 plasma of Si0.7Ge0.3/Si/Si0.7Ge0.3 layers International conference

    Kotaro Ozaki, Noriharu Takada, Yusuke Imai, Takayoshi Tsutsumi, Kenji Ishikawa, Yuji Yamamoto, Wei-Chen Wen, and Katsunori Makihara

    2025.3.4 

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    Event date: 2025.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Chubu University, Aichi, Japan  

  19. Irradiation time dependence of bactericidal effect of oxygen radical-activated indole solution International conference

    Daiji Kitagawa, Takuya Watanabe, Motoyuki Shimizu, Masashi Kato, Kenji Ishikawa, Hiromasa Tanaka, Masaru Hori, and Masafumi Ito

    2025.3.4 

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    Event date: 2025.3

    Language:English   Presentation type:Poster presentation  

    Venue:Chubu University, Aichi, Japan  

  20. Fabrication of cubic boron nitride films on WC substrates using electron beam excited plasma CVD method International conference

    Toru Harigai, Seigo Takashima, Kenichi Inoue, HIroyuki Kousaka, Kenji Ishikawa, and Masaru Hori

    2025.3.4 

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    Event date: 2025.3

    Language:English   Presentation type:Poster presentation  

    Venue:Chubu University, Aichi, Japan  

  21. The effect of electrical stimulation on the multipotency of mesenchymal stem cells on SiC-coated CNW scaffolds International conference

    Koki Ono, Ayoko Tanaka, Kenji Ishikawa, Wakana Takeuchi, Kenichi Uehara, Shigeo Yasuhara, Masaru Hori, and Hiromasa Tanaka

    2025.3.4 

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    Event date: 2025.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Chubu University, Aichi, Japan  

  22. Damage evaluation for electron-beam-assisted modification of GaN surface International conference

    Takayoshi Tsutsumi, Yusuke Izumi, Makoto Sekine, Masaru Hori, and Kenji Ishikawa

    2025.3.4 

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    Event date: 2025.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Chubu University, Aichi, Japan  

  23. Low-damage plasma etching of metal gate TiAlC using nonhalogen chemistries at room temperature International conference

    Thi-Thuy-Nga Nguyen, Kazunori Shinoda, Shih-Nan Hsiao, Kenji Maeda, Kenetsu Yokogawa, Masaru Izawa, Kenji Ishikawa, and Masaru Hori

    2025.3.4 

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    Event date: 2025.3

    Language:English   Presentation type:Poster presentation  

    Venue:Chubu University, Aichi, Japan  

  24. Surface reactions by deep ultraviolet laser irradiation for GaN etching International conference

    Ryoto Takahashi, Takayoshi Tsutsumi, Kenichi Inoue, Ryusei Sakai, Makoto Sekine, Masaru Hori, and Kenji Ishikawa

    2025.3.4 

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    Event date: 2025.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Chubu University, Aichi, Japan  

  25. Plasma-activated Ringer’s lactate solution induces changes in the planarian regeneration International conference

    Yota Kojima, Kenji Ishikawa, Hiroshi Hashizume, Masaru Hori, and Hiromasa Tanaka

    2025.3.4 

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    Event date: 2025.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Chubu University, Aichi, Japan  

  26. In-situ analysis of chlorination of TiN surfaces by chlorine radical irradiations International conference

    Shunya Hirai, Kazunori Shinoda, Thi-Thuy-Nga Nguyen, Takayoshi Tsutsumi, Kenichi Inoue, and Kenji Ishikawa

    2025.3.4 

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    Event date: 2025.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Chubu University, Aichi, Japan  

  27. Growth promotion of pea sprouts (Pisum Sativum) by non-equilibrium atmospheric pressure plasma irradiation International conference

    Yuta Ibuka, Hiroshi Hashizume, Kenji Ishikawa, Masaru Hori, and Hiromasa Tanaka

    2025.3.4 

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    Event date: 2025.3

    Language:English   Presentation type:Poster presentation  

    Venue:Chubu University, Aichi, Japan  

  28. Effect of sticking probability on radical transports in high-aspect-ratio holes International conference

    Takumi Kurushima, Takayoshi Tsutsumi, Makoto Sekine, Masaru Hori, and Kenji Ishikawa

    2025.3.4 

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    Event date: 2025.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Chubu University, Aichi, Japan  

  29. Analysis of radical production in plasma-activated Ringer’s lactate solution using electron spin resonance International conference

    Taishi Yamakawa, Kenichi Inoue, Masaru Hori, Kenji Ishikawa, and Hiromasa Tanaka

    2025.3.4 

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    Event date: 2025.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Chubu University, Aichi, Japan  

  30. Optimizing plasma etching processes by elucidating C3HF5 primary dissociation mechanisms International conference

    Nguyen Trung Tran, Hiroshi Iwayama, Toshio Hayashi, and Kenji Ishikawa

    2025.3.4 

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    Event date: 2025.3

    Language:English   Presentation type:Poster presentation  

    Venue:Chubu University, Aichi, Japan  

  31. Effects of PAL targeting cancer-initiating cells International conference

    Takaya Suzuki, Taishi Yamakawa, Ayako Tanaka, Masaaki Mizuno, Shinya Toyokuni, Hiroaki Kajiyama, Kae Nakamura, Kenji Ishikawa, Masaru Hori, and Hiromasa Tanaka

    2025.3.4 

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    Event date: 2025.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Chubu University, Aichi, Japan  

  32. 新規創薬プロセスの確立を目指したプラズマ源開発

    山川太嗣、井上健一、石川健治、堀勝,田中宏昌

    2025.2.8 

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    Event date: 2025.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学 野依記念学術交流館 野依ホール  

  33. がん治療増感に関わる放射線,温熱、超音波および低温プラズマの相互関係

    近藤隆、村谷珠輝、古澤之裕、井上健一、橋爪博司、田中宏昌、石川健治、堀勝

    2025.2.2 

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    Event date: 2025.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:相模原市立産業会館  

  34. アカデミックロードマップ:バイオ

    石川健治

    2025.1.29 

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    Event date: 2025.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:J:COMホルトホール大分  

  35. UVレーザー光照射エッチングプロセスにおけるGaN表面の脱離挙動

    高橋遼人,酒井流星,堤隆嘉,井上健一,関根誠,堀勝,石川健治

    2025.1.29 

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    Event date: 2025.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:J:COMホルトホール大分  

  36. Computational chemistry of plasma-driven reactions in lactated solution International conference

    第34回日本MRS年次大会  2024.12.16 

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    Event date: 2024.12

    Language:English   Presentation type:Oral presentation (general)  

  37. The impact of plasma irradiation on the ascorbic acid of Artemia International conference

    第34回日本MRS年次大会  2024.12.16 

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    Event date: 2024.12

    Language:English   Presentation type:Oral presentation (general)  

  38. Understanding surface reaction in PECVD process by combining in-situ monitoring and machine learning International conference

    Takayoshi Tsutsumi, Yusuke Ando, Makoto Sekine, Masaru Hori, and Kenji Ishikwa

    2024.12.9 

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    Event date: 2024.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Tokyo, Japan  

  39. The effect of electrical stimulation on the cellular response of human mesenchymal stem cells on SiC-coated CNW scaffolds International conference

    Koki Ono, Ayako Tanaka, Kenji Ishikawa, Wakana Takeuchi, Kenichi Uehara, Shigeo Yasuhara, Masaru Hori, and Hiromasa Tanaka

    2024.12.4 

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    Event date: 2024.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston, Massachusetts, USA  

  40. In-situ observation of reaction layer in surface for damage-free atomic layer etching International conference

    Tsutsumi Takayoshi, Hiroki Kondo, Makoto Sekine, Kenji Ishikawa, and Masaru Hori

    2024.12.1 

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    Event date: 2024.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Boston, Massachusetts, USA  

  41. プラズマ活性乳酸リンゲル液による乳がん細胞選択的殺傷機構の解明

    田中文子、水野正明、石川健治、ミロン カメリア、橋爪博司、岡崎泰昌、豊國伸哉、中村香江、梶山広明、堀勝、田中宏昌

    2024.11.29 

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    Event date: 2024.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:福岡国際会議場  

  42. プラズマ活性乳酸リンゲル液内オートファジー誘導物質の特定

    山川太嗣、田中文子、ミロン カメリア、中村香江、梶山広明、豊國伸哉、水野正明、石川健治、堀勝、田中宏昌

    2024.11.28 

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    Event date: 2024.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:福岡国際会議場  

  43. プラズマ活性溶液による細胞運命の制御生命エレクトロニクスの展開

    田中宏昌,水野正明,石川健治,梶山広明,豊國伸哉,堀勝

    2024.11.17 

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    Event date: 2024.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:タワーホール船堀  

  44. 四重極型質量分析を用いた材料表面の中性粒子の付着確率計測

    来島拓海,堤隆嘉,関根誠,堀勝,石川健治

    2024.11.17 

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    Event date: 2024.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:タワーホール船堀  

  45. 機械学習を用いたアモルファスカーボン薄膜の体積機構におけるプロセスパラメータの寄与度解析

    安藤悠介,堤隆嘉,近藤博基,関根誠,石川健治,堀勝

    2024.11.17 

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    Event date: 2024.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:タワーホール船堀  

  46. Hydrofluoroethane plasmas with CHF2CF3, CF3CH3, and CHF2CH3 on reactions of etching surface of SiN, SiO2 and poly-Si films International conference

    Tran Trung Nguyen, Toshio Hayashi, Hiroshi Iwayama, Makoto Sekine, Masaru Hori, and Kenji Ishikawa

    2024.11.15 

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    Event date: 2024.11

    Language:English   Presentation type:Poster presentation  

    Venue:Hokkaido, Japan  

  47. Plasma-enhanced atomic layer deposition of carbon films International conference

    Liugang Hu, Takayoshi Tsutsumi, Nobuyoshi Kobayashi, Kenji Ishikawa, and Masaru Hori

    2024.11.14 

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    Event date: 2024.11

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:Hokkaido, Japan  

  48. UV laser ionization desorption of surfaces for GaN etching International conference

    Ryoto Takahashi, Ryusei Sakai, Takayoshi Tsutsumi, Makoto Sekine, Masaru Hori, and Kenji Ishikawa

    2024.11.15 

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    Event date: 2024.11

    Language:English   Presentation type:Poster presentation  

    Venue:Hokkaido, Japan  

  49. Etching of GaN using Ar/F2 plasma at high temperatures International conference

    J. He, Shohei Nakamura, Atsushi Tanide, Tran Trung Nguyen, Takayoshi Tsutsumi, Makoto Sekine, Masaru Hori, and Kenji Ishikawa

    2024.11.15 

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    Event date: 2024.11

    Language:English   Presentation type:Poster presentation  

    Venue:Hokkaido, Japan  

  50. Plasma-driven sciences: exploring complex interactions at plasma-boundaries International conference

    Kenji Ishikawa

    2024.11.12 

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    Event date: 2024.11

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:Kuala Lumpur, Malaysia  

  51. In-situ measurements of plasma-induced defects and radical adsorption in ALE International conference

    Takayoshi Tsutsumi, Makoto Sekine, Kenji Ishikawa, Masaru Hori

    2024.11.5 

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    Event date: 2024.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Malacca, Malaysia  

  52. Advanced semiconductor plasma processes pioneered by understanding and controlling plasma-surface interactions International conference

    Masaru Hari, Makoto Sekine, Takayoshi Tsutsumi, Kenji Ishikawa

    2024.11.4 

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    Event date: 2024.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Tampa, FL, USA  

  53. シロイヌナズナの種子における酸素ラジカルの照射効果

    川口幸大,大竹将平,塚越啓央,田中宏昌,石川健治,堀勝,伊藤昌文

    2024.11.2 

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    Event date: 2024.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学 EI創発工学館 2F  

  54. 低温環境下での酸素ラジカル活性化ピロール溶液の殺菌効果

    渡邊 拓哉,北川 大慈, 石川 健治, 田中 宏昌, 堀 勝, 伊藤 昌文

    2024.11.2 

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    Event date: 2024.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学 EI創発工学館 2F  

  55. 酸素ラジカル処理されたヒスチジン溶液が線維芽細胞へ与える影響

    福井 公輝,石川 健治,田中 宏昌,堀 勝,伊藤 昌文

    2024.11.2 

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    Event date: 2024.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋大学 EI創発工学館 2F  

  56. Behavior of radical adsorption on plasma induced defect for atomic layer etching International conference

    Airah Peraro Osonio, Takayoshi Tsutsumi, Kenji Ishikawa, and Masaru Hori

    2024.10.29 

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    Event date: 2024.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Tagaytay, Philippines  

  57. 超音波および低温プラズマによるフリーラジカル生成に関するスピン捕捉法による検討

    近藤隆、水野裕貴、安田啓司、石川健治、堀勝

    2024.10.19 

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    Event date: 2024.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:善光寺本坊、信州大学 長野(工学)キャンパス  

  58. Effect of bias voltage on etching reaction of SiO2 in cryogenic process with HF contained plasmas International conference

    Yusuke Imai, Shih-Nan Hsiao, Makoto Sekine, Kenji Ishikawa, Takayoshi Tsutsumi, Yuki Iijima, and Masaru Hori

    2024.10.15 

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    Event date: 2024.10

    Language:English   Presentation type:Poster presentation  

    Venue:Taipei, Taiwan  

  59. In situ electron spin resonance and spin trapping study for kinetics of free radical reactions at plasma/liquid interfaces plasma chemistry on liquids International conference

    Kenichi Inoue, Takashi Kondo, Kenji Ishikawa, and Masaru Hori

    2024.10.3 

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    Event date: 2024.9 - 2024.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:San Diego, California, USA  

  60. Process control of plasma etching of SiN, SiO2 and poly-Si films via enhanced fragmentation of CHF2CF3 and CF3CH3, CHF2CH3 International conference

    Trung Nguyen Tran, Toshio Hayashi, Hiroshi Iwayama, Shih-Nan Hsiao, Makoto Sekine, Masaru Hori, Kenji Ishikawa

    2024.10.1 

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    Event date: 2024.9 - 2024.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:San Diego, California, USA  

  61. Identification of autophagy inducers on cancer cell treated by plasma-activated Ringer’s lactate solution International conference

    Taishi Yamakawa, Kae Nakamura, Masaaki Mizuno, Shinya Toyokuni, Hiroaki Kajiyama, Kenji Ishikawa, Masaru Hori, and Hiromasa Tanaka

    2024.10.2 

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    Event date: 2024.9 - 2024.10

    Language:English   Presentation type:Poster presentation  

    Venue:San Diego, California, USA  

  62. プラズマ活性乳酸リンゲル液(PAL)が及ぼすプラナリアの再生評価

    小島 陽太、石川 健治、橋爪 博司、堀 勝、田中 宏昌

    2024.9.20 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  63. プラズマ活性乳酸リンゲル液(PAL)が及ぼすプラナリアの再生評価

    小島 陽太、石川 健治、橋爪 博司、堀 勝、田中 宏昌

    2024.9.20 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  64. Heプラズマジェットを用いた直接照射による豚皮膚への影響

    山田 真帆、中村 香江、梶山 広明、豊國 伸哉、水野 正明、石川 健治、堀 勝、田中 宏昌

    2024.9.20 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  65. マンモスフェア由来細胞を標的としたプラズマ活性溶液の影響

    鈴木 崇矢、山川 太嗣、田中 文子、水野 正明、豊國 伸哉、梶山 広明、中村 香江、石川 健治、堀 勝、田中 宏昌

    2024.9.20 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  66. プラズマ活性乳酸リンゲル液による正常細胞のマイトファジー誘導評価

    森 皓平、石川 健治、田中 宏昌、堀 勝

    2024.9.20 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  67. 酸素ラジカル活性L-トリプトファン溶液による線維芽細胞の増殖促進効果

    田島 慶人、石川 健治、堀 勝、伊藤 昌文

    2024.9.20 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  68. SiC被覆カーボンナノウォール上でのヒト間葉系幹細胞への電気刺激印加の効果

    小野 浩毅、田中 文子、石川 健治、竹内 和歌奈、上原 賢一、安原 重雄、堀 勝、田中 宏昌

    2024.9.20 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  69. 酸素ラジカル活性化インドール溶液による中性pH領域での殺菌効果

    北川 大慈、渡邊 拓哉、志水 元亨、加藤 雅士、石川 健治、堀 勝、伊藤 昌文

    2024.9.20 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  70. 温度制御した酸素ラジカル活性化ピロール溶液の殺菌効果

    渡邊 拓哉、北川 大慈、石川 健治、堀 勝、伊藤 昌文

    2024.9.20 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  71. スピントラップ法を用いたプラズマ/液相界面ラジカルの実時間検出

    井上 健一、近藤 隆、石川 健治、堀 勝

    2024.9.20 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  72. カーボンナノウォール成長時の構造制御と基板温度効果

    ゴ クアンミン、ノ ヴァンノン、小田 修、石川 健治、堀 勝

    2024.9.19 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  73. CF4/H2プラズマによるSiO2低温エッチングのRFバイアス依存性

    今井 祐輔、蕭 世男、関根 誠、堤 隆嘉、石川 健治、堀 勝

    2024.9.18 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  74. 高アスペクト比ホール内におけるラジカルの付着確率の輸送への影響

    来島 拓海、堤 隆嘉、関根 誠、堀 勝、石川 健治

    2024.9.18 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  75. 紫外光照射時のGaN表面エッチング反応機構

    高橋 遼人、酒井 流星、石川 健治、関根 誠、堤 隆嘉、堀 勝

    2024.9.18 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  76. 酸素プラズマとギ酸蒸気によるPtの原子層エッチング時の表面反応

    三輪 和弘、Thi-Thuy-Nga Nguyen、赤木 大二郎、岡東 健、堀 勝、石川 健治

    2024.9.18 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  77. 電子線支援原子層エッチングにおけるGaN表面フッ素化反応

    泉 祐輔、堤 隆嘉、近藤 博基、関根 誠、石川 健治、堀 勝

    2024.9.18 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  78. EBEP CVD法を用いたBN膜形成における基板種の影響

    針谷 達、井上 健一、髙島 成剛、上坂 裕之、石川 健治、堀 勝

    2024.9.18 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  79. リモート酸素プラズマによるSiO2上の単層グラフェンの選択的除去

    胡 留剛、石川 健治、Thi-Thuy-Nga Nguyen、蕭 世男、堀 勝

    2024.9.18 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  80. エピタキシャル成長した Si0.7Ge0.3 および Si 薄膜におけるH2 希釈 CF4 ガスによるドライエッチングの選択性評価

    尾崎 孝太朗、高田 昇治、堤 隆嘉、石川 健治、Yamamoto Yuji、Wen Wei-Chen、牧原 克典

    2024.9.16 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  81. 酸素ラジカル活性L-トリプトファン溶液による線維芽細胞の増殖促進効果

    田島 慶人、石川 健治、堀 勝、伊藤 昌文

    2024.9.20 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  82. プラズマ活性乳酸リンゲル液による正常細胞のマイトファジー誘導評価

    森 皓平、石川 健治、田中 宏昌、堀 勝

    2024.9.20 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  83. マンモスフェア由来細胞を標的としたプラズマ活性溶液の影響

    鈴木 崇矢、山川 太嗣、田中 文子、水野 正明、豊國 伸哉、梶山 広明、中村 香江、石川 健治、堀 勝、田中 宏昌

    2024.9.20 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  84. Heプラズマジェットを用いた直接照射による豚皮膚への影響

    山田 真帆、中村 香江、梶山 広明、豊國 伸哉、水野 正明、石川 健治、堀 勝、田中 宏昌

    2024.9.20 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  85. EBEP CVD法を用いたBN膜形成における基板種の影響

    針谷 達、井上 健一、髙島 成剛、上坂 裕之、石川 健治、堀 勝

    2024.9.18 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  86. SiC被覆カーボンナノウォール上でのヒト間葉系幹細胞への電気刺激印加の効果

    小野 浩毅、田中 文子、石川 健治、竹内 和歌奈、上原 賢一、安原 重雄、堀 勝、田中 宏昌

    2024.9.20 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  87. 酸素ラジカル活性化インドール溶液による中性pH領域での殺菌効果

    北川 大慈、渡邊 拓哉、志水 元亨、加藤 雅士、石川 健治、堀 勝、伊藤 昌文

    2024.9.20 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  88. 温度制御した酸素ラジカル活性化ピロール溶液の殺菌効果

    渡邊 拓哉、北川 大慈、石川 健治、堀 勝、伊藤 昌文

    2024.9.20 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  89. スピントラップ法を用いたプラズマ/液相界面ラジカルの実時間検出

    井上 健一、近藤 隆、石川 健治、堀 勝

    2024.9.20 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  90. カーボンナノウォール成長時の構造制御と基板温度効果

    ゴ クアンミン、ノ ヴァンノン、小田 修、石川 健治、堀 勝

    2024.9.19 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  91. CF4/H2プラズマによるSiO2低温エッチングのRFバイアス依存性

    今井 祐輔、蕭 世男、関根 誠、堤 隆嘉、石川 健治、堀 勝

    2024.9.18 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  92. 高アスペクト比ホール内におけるラジカルの付着確率の輸送への影響

    来島 拓海、堤 隆嘉、関根 誠、堀 勝、石川 健治

    2024.9.18 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  93. 紫外光照射時のGaN表面エッチング反応機構

    高橋 遼人、酒井 流星、石川 健治、関根 誠、堤 隆嘉、堀 勝

    2024.9.18 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  94. 酸素プラズマとギ酸蒸気によるPtの原子層エッチング時の表面反応

    三輪 和弘、Thi-Thuy-Nga Nguyen、赤木 大二郎、岡東 健、堀 勝、石川 健治

    2024.9.18 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  95. 電子線支援原子層エッチングにおけるGaN表面フッ素化反応

    泉 祐輔、堤 隆嘉、近藤 博基、関根 誠、石川 健治、堀 勝

    2024.9.18 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟、朱鷺メッセ  

  96. 低温プラズマ農業のもたらす効果と技術化への期待

    橋爪博司,北野英己,松本省吾,阿部明子,水野寛子,三田薫,湯浅元気,東野里江,田中宏昌,石川健治,榊原均,広末庸治, 前島正義,齋藤邦彰,水野正明,堀勝

    2024.9.12 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:岐阜大学  

  97. Bactericidal and plant-growth effects of amino-acid solutions irradiated by electrically-neutral oxygen radicals International conference

    Masafumi Ito, Naoyuki Iwata, Kenji Ishikawa, Yasuhiro Nishikawa, Motoyuki Shimizu, Hironaka Tsukakoshi, Masashi Kato, Masaru Hori

    2024.9.13 

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    Event date: 2024.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ljubljana, Slovenia  

  98. Cancer therapy using plasma-activated solutions International conference

    Hiromasa Tanaka, Masaaki Mizuno, Kenji Ishikawa, Hiroaki Kajiyama, Shinya Toyokuni, and Masaru Hori

    2024.9.9 

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    Event date: 2024.9

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:Ljubljana, Slovenia  

  99. Metabolic disorders in E. coli induced by electrically neutral oxygen radicals irradiation of tryptophane-containing solutions International conference

    Kenji Ishikawa, Masafumi Ito, Naoyuki Iwata, Yasuhiro Nishikawa, Motoyuki Shimizu, Hironaka Tsukakoshi, Masashi Kato, Masaru Hori, Hiromasa Tanaka

    2024.9.13 

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    Event date: 2024.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ljubljana, Slovenia  

  100. Cold atmospheric pressure plasma-treated polymer solutions for cancer treatment International conference

    Camelia Miron, Hiromasa Tanaka, L. Marin, M. Iftime, A. Fifere, Takashi Kondo, Kenji Ishikawa, Hiroki Kondo, Shinya Toyokuni, V. Harabagiu, Masaru Hori

    2024.9.14 

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    Event date: 2024.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Antalya, Turkey  

  101. 窒化ガリウムに対するノンイオン原子層エッチングについて

    島津 大隼, 堤 隆嘉, 井上 健一, 石川 健治

    2024.9.6 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:国立オリンピック記念青少年総合センター  

  102. 低温プラズマ処理による種子の発芽促進要因の解明

    伊藤輝喜、橋爪博司、石川健治、堀勝、田中宏昌

    2024.9.6 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:国立オリンピック記念青少年総合センター  

  103. 複数回PAL処理による抗腫瘍効果の持続性の調査及びメカニズムの解明ー耐性獲得によるがん再発防止の実現ー

    若司 瞭, 中村 香江, 水野 正明, 豊國 伸哉, 梶山 広明,堀 勝, 石川 健治, 田中 宏昌

    2024.9.6 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:国立オリンピック記念青少年総合センター  

  104. 塩素ラジカルを用いた金属窒化物の原子層エッチングメカニズムに関する研究

    平井 俊也, 篠田 和典, 堤 隆嘉, 井上 健一, 石川 健治

    2024.9.6 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:国立オリンピック記念青少年総合センター  

  105. 非平衡大気圧プラズマを用いたアルテミア卵への応用

    藤田力丸, 山内拓、秋山真一、石川健治、堀勝、田中宏昌

    2024.9.6 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:国立オリンピック記念青少年総合センター  

  106. AHF(無水フッ酸)ガスを用いた異方性エッチング

    田中健太郎, 石川 健治, 堤 隆嘉, 関根 誠, 堀 勝

    2024.9.6 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:国立オリンピック記念青少年総合センター  

  107. Biorefinery processes using non-equilibrium atmospheric-pressure plasmas International conference

    Masafumi Ito, Motoyuki Shimizu, Masashi Kato, Hironaka Tsukagoshi, Yasuhiro Nishikawa, Kenji Ishikawa, Masaru Hori

    2024.8.21 

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    Event date: 2024.8

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:Jeju, Korea  

  108. A new challenge for developing novel atomic layer etching: applying the Leidenfrost effect to obtain floating nanomist assisted vapor etching International conference

    Thi-Thuy-Nga Nguyen, Y. Yamaguchi, Kazunori Shinoda, K. Sun, Kenji Maeda, Kenetsu Yokogawa, Masaru Izawa, Kenji Ishikawa, Masaru Hori

    2024.8.6 

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    Event date: 2024.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Helsinki, Finland  

  109. 放射線、超音波および低温プラズマによるフリーラジカル生成―スピン捕捉法による検討

    近藤隆,井上健一,橋爪博司,田中宏昌,石川健治,堀勝

    2024.7.20 

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    Event date: 2024.7

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:奈良教育大学 高畑キャンパス 講義1, 2号棟  

  110. プラズマ活性乳酸リンゲル液添加に起因する表面形状変化の経時評価

    臼田淳一、柳生憲伸、 田中宏昌、石川健治、堀勝、高橋康史

    2024.7.18 

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    Event date: 2024.7

    Language:Japanese   Presentation type:Poster presentation  

    Venue:つくば国際会議場  

  111. 温熱による低温プラズマ誘発細胞死の増強ー直接照射から照射溶液の効果へ

    近藤隆、村谷珠輝、古澤之裕、齋藤淳一、橋爪博司、田中宏昌、石川健治、堀勝

    2024.7.13 

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    Event date: 2024.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市立大学病院 医学部同窓会館(新厚生会館)  

  112. Biological interactions of plasma-activated solutions International conference

    Hiromasa Tanaka, Masaaki Mizuno, Kenji Ishikawa, Hiroaki Kajiyama, Shinya Toyokuni, and Masaru Hori

    2024.6.24 

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    Event date: 2024.6

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:KwangWoon University, Seoul, Korea  

  113. 低温プラズマによるがん治療の可能性―温熱による増強効果―

    近藤 隆,村谷珠輝,古澤之裕,齋藤淳一,橋爪博司,田中宏昌,石川健治,堀勝

    2024.6.22 

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    Event date: 2024.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:大阪大学 中ノ島センター  

  114. Plasma-based pseudo-wet etching for SiN using hydrogen contained fluorocarbon gases at cryogenic temperatures International conference

    Shih-Nan Hsiao, Yusuke Imai, Makoto Sekine, Takayoshi Tsutsumi, Kenji Ishikawa, Yuki Iijima, Ryutaro Suda, Masahiko Yokoi, Maju Tomura, Yoshihide Kihara, and Masaru Hori

    2024.6.10 

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    Event date: 2024.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Leuven, Belgium  

  115. 乳がん培養細胞系を用いたプラズマ活性乳酸リンゲル液による選択的殺傷効果の細胞内分子機構

    田中宏昌、田中文子、柴田由紀、水野正明、石川健治、岡崎泰昌、豊國伸哉、中村香江、梶山広明,堀勝

    2024.5.17 

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    Event date: 2024.5

    Language:Japanese   Presentation type:Poster presentation  

    Venue:神奈川歯科大学  

  116. 放射線および低温プラズマによるアミノ酸のフリーラジカル生成―結晶アラニンの脱アミノラジカルを利用した線量評価-

    近藤 隆、熊谷 純、平山亮一、橋爪博司、田中宏昌、石川健治、堀勝

    2024.5.10 

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    Event date: 2024.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:群馬会館  

  117. 液中プラズマによるダングリングボンド形成を通じた六方晶窒化ホウ素への官能基修飾

    井上 健一, 高木 直人, 伊藤 剛仁, 清水 禎樹, 石川 健治, 堀 勝, 寺嶋 和夫

    第70回応用物理学会春季学術講演会 15p-PB03-8  2023.3.15 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Poster presentation  

    Venue:上智大学四谷キャンパス+オンライン  

  118. プラズマ駆動型科学とは何か~プラズマプロセスの新展開に期待して~ パネルディスカッション

    石川 健治, 浜口 智志, 成田 絵美, 白谷 正治, 冨谷 茂隆, 室賀 駿, 佐藤 孝紀, 野崎 智洋, 吉田 朋子

    第70回応用物理学会春季学術講演会 16p-A402-10  2023.3.16 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学四谷キャンパス+オンライン  

  119. 非平衡大気圧プラズマがゼブラフィッシュに及ぼす影響とその機構解明

    紅林 佑弥, 石川 健治, 田中 宏昌, 秋山 真一, 橋爪 博司, 堀 勝

    第70回応用物理学会春季学術講演会 17p-A409-9  2023.3.17 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学四谷キャンパス+オンライン  

  120. プラズマ活性乳酸リンゲル液によるがん細胞死経路上のオートファジー観察

    山川 太嗣, 石川 健治, 橋爪 博司, 田中 宏昌, 堀 勝

    第70回応用物理学会春季学術講演会 17a-A409-6  2023.3.17 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学四谷キャンパス+オンライン  

  121. カーボンナノウォール足場上での電気刺激重畳培養におけるヒト間葉系幹細胞の形態変化

    小島 悠暉, 近藤 博基, 田中 宏昌, 石川 健治, 橋爪 博司, 堀 勝

    第70回応用物理学会春季学術講演会 17a-A409-2  2023.3.17 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学四谷キャンパス+オンライン  

  122. C2F4の電子物性とPTFEの生成機構

    林 俊雄, 石川 健治, 関根 誠, 堀 勝, 兒玉 直人, 豊田 浩孝

    第70回応用物理学会春季学術講演会 17p-A205-18  2023.3.17 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学四谷キャンパス+オンライン  

  123. F2添加 Ar プラズマを用いた基板昇温下での AlGaN の原子層エッチング

    中村 昭平, 谷出 敦, 灘原 壮一, 石川 健治, 小田 修, 堀 勝

    第70回応用物理学会春季学術講演会 17p-A205-11  2023.3.17 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学四谷キャンパス+オンライン  

  124. 成膜パラメータの寄与度解析に基づく、 水素化アモルファスカーボン薄膜のエッチ耐性の向上

    安藤 悠介, 近藤 博基, 石川 健治, 堤 隆嘉, 関根 誠, 堀 勝

    第70回応用物理学会春季学術講演会 17a-A205-7  2023.3.17 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:上智大学四谷キャンパス+オンライン  

  125. ウエハプロセスのグリーン化イノベーションに向けた戦略的挑戦 Invited

    堀 勝、関根 誠、石川 健治

    第83回 応用物理学会秋季学術講演会 21p-B104-3  2022.9.21 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東北大学川内北キャンパス+オンライン  

  126. プラズマ活性乳酸リンゲル液によるマクロファージの形質発現誘導

    出野 雄大、柏倉 慧史、田中 宏昌、石川 健治、橋爪 博司、中村 香江、豊國 伸哉、水野 正明、梶山 広明、堀 勝

    第83回 応用物理学会秋季学術講演会 20a-A106-7  2022.9.20 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学川内北キャンパス+オンライン  

  127. イオン照射角制御によるカーボンナノウォールの配向成長

    射場 信太朗、近藤 博基、石川 健治、堤 隆嘉、平松 美根男、関根 誠、堀 勝

    第83回 応用物理学会秋季学術講演会 23p-B102-5  2022.9.23 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学川内北キャンパス+オンライン  

  128. プラズマ活性溶液による細胞運命の制御 Invited

    田中 宏昌、水野 正明、石川 健治、梶山 広明、豊國 伸哉、吉川 史隆、堀 勝

    第83回 応用物理学会秋季学術講演会 21p-B200-5  2022.9.21 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東北大学川内北キャンパス+オンライン  

  129. 非平衡大気圧プラズマを用いた陸上養殖実現に向けた基礎的研究

    紅林 佑弥、石川 健治、田中 宏昌、秋山 真一、橋爪 博司、堀 勝

    第83回 応用物理学会秋季学術講演会 20p-A106-13  2022.9.20 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学川内北キャンパス+オンライン  

  130. 水素化アモルファスカーボン薄膜の合成機構における活性種の寄与度の機械学習を用いた解析

    近藤 博基、黒川 純平、堤 隆嘉、関根 誠、石川 健治、堀 勝

    第83回 応用物理学会秋季学術講演会 23a-B101-3  2022.9.23 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学川内北キャンパス+オンライン  

  131. プラズマアシスト熱サイクル法を用いたSiGeのセルフリミティング性サイクルエッチング

    篠田 和典、三浦 勝哉、前田 賢治、伊澤 勝、NGUYEN Thi-Thuy-Nga、石川 健治、堀 勝

    第83回 応用物理学会秋季学術講演会 22p-A406-4  2022.9.22 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東北大学川内北キャンパス+オンライン  

  132. ラジカル注入型プラズマ励起化学気相堆積法で成長したカーボンナノウォールの3次元構造解析

    近藤 博基、尾崎 敦士、堤 隆嘉、関根 誠、石川 健治、堀 勝、平松 美根男

    第69回応用物理学会春季学術講演会 24p-D114-6  2022.3.24 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ハイブリッド,青山学院大学相模原キャンパス  

  133. 稲穂への低温プラズマ照射がもたらす酒造品種玄米の品質向上

    橋爪 博司、北野 英己、水野 寛子、阿部 明子、三田 薫、蕭 世男、湯浅 元気、東野 里江、田中 宏昌、石川 健治、松本 省吾、榊原 均、仁川 進、前島 正義、水野 正明、堀 勝

    第69回応用物理学会春季学術講演会 25p-E105-13  2022.3.24 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ハイブリッド,青山学院大学相模原キャンパス  

  134. 網羅的解析に基づくプラズマ活性溶液による細胞死の機構解明

    田中 宏昌、水野 正明、石川 健治、橋爪 博司、中村 香江、梶山 広明、吉川 史隆、岡崎 康昌、豊國 伸哉、堀 勝

    第69回応用物理学会春季学術講演会 25a-E105-8  2022.3.24 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ハイブリッド,青山学院大学相模原キャンパス  

  135. プラズマ照射乳酸リンゲル液の抗腫瘍成分の評価

    伊藤 大貴、岩田 直幸、石川 健治、橋爪 博司、中村 香江、ミロン カメリア、田中 宏昌、梶山 広明、豊國 伸哉、水野 正明、堀 勝

    第69回応用物理学会春季学術講演会 25a-E105-7  2022.3.24 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ハイブリッド,青山学院大学相模原キャンパス  

  136. 流液への照射によるプラズマ活性溶液の作製と短寿命活性種の測定

    柏倉 慧史、岩田 直幸、石川 健治、橋爪 博司、田中 宏昌、堀 勝

    第69回応用物理学会春季学術講演会 25a-E105-6  2022.3.24 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ハイブリッド,青山学院大学相模原キャンパス  

  137. 中性酸素ラジカル源を用いたポリエチレンテレフタレートの生分解速度の向上

    五藤 大智、岩田 直幸、石川 健治、橋爪 博司、田中 宏昌、伊藤 昌文、堀 勝

    第69回応用物理学会春季学術講演会 25a-E105-1  2022.3.24 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ハイブリッド,青山学院大学相模原キャンパス  

  138. C3H6/H2プラズマを用いた水素化アモルファスカーボン成膜における成膜前駆体と膜特性の相関関係

    黒川 純平、光成 正、近藤 博基、堤 隆嘉、関根 誠、石川 健治、堀 勝

    第69回応用物理学会春季学術講演会 25p-E104-13  2022.3.24 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ハイブリッド,青山学院大学相模原キャンパス  

  139. C4F8/SF6ガス変調サイクルにおいてバイアス印加位相がエッチング形状に及ぼす影響

    吉江 泰斗、堤 隆嘉、石川 健治、近藤 博基、関根 誠、堀 勝

    第69回応用物理学会春季学術講演会 25a-E104-7  2022.3.24 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ハイブリッド,青山学院大学相模原キャンパス  

  140. Ar/F2プラズマとBCl3の交互供給によるAlGaN原子層エッチングでの組成比制御

    中村 昭平、谷出 敦、木村 貴弘、灘原 壮一、石川 健治、小田 修、堀 勝

    第69回応用物理学会春季学術講演会 25a-E104-5  2022.3.24 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ハイブリッド,青山学院大学相模原キャンパス  

  141. 窒化ガリウムの基板昇温時サイクルエッチング特性

    南 吏玖、中村 昭平、谷出 敦、石川 健治、堤 隆嘉、近藤 博基、関根 誠、堀 勝

    第69回応用物理学会春季学術講演会 25a-E104-4  2022.3.24 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ハイブリッド,青山学院大学相模原キャンパス  

  142. プラズマ励起化学気相堆積法におけるカーボンナノウォールの配向成長に対するイオン照射角度の効果

    射場 信太朗、近藤 博基、石川 健治、堤 隆嘉、平松 美根男、関根 誠、堀 勝

    第69回応用物理学会春季学術講演会 24p-D114-8  2022.3.24 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ハイブリッド,青山学院大学相模原キャンパス  

  143. 高効率エクソソーム解析に向けたカーボンナノウォールテンプレートの表面電位制御

    橋本 拓海、近藤 博基、田中 宏昌、石川 健治、堤 隆嘉、関根 誠、安井 隆雄、馬場 嘉信、平松 美根男、堀 勝

    第69回応用物理学会春季学術講演会 24p-D114-7  2022.3.24 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:ハイブリッド,青山学院大学相模原キャンパス  

  144. Stable production of high-quality strawberry fruits with cold plasma treatment during cultivation

    2022.1.24 

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    Event date: 2022.1

    Language:Japanese   Presentation type:Oral presentation (general)  

  145. Morphological control of carbon nanowalls grown by a radical injection plasma enhanced chemical vapor deposition using C2F6/H2 mixture gas

    2022.1.24 

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    Event date: 2022.1

    Language:Japanese   Presentation type:Oral presentation (general)  

  146. Deposition of nanographene on ethanol-immersed metal substrates by in-liquid plasma process

    2022.1.24 

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    Event date: 2022.1

    Language:Japanese   Presentation type:Oral presentation (general)  

  147. Effect of morphology and heights of carbon nanowalls on their optical transmittance

    2022.1.24 

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    Event date: 2022.1

    Language:Japanese   Presentation type:Oral presentation (general)  

  148. Biodegradation of polyethylene terephthalate treated neutral oxygen radical

    2022.1.24 

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    Event date: 2022.1

    Language:Japanese   Presentation type:Oral presentation (general)  

  149. Molecular mechanisms of cancer cell death by plasma-activated Ringer's lactate solution

    2022.1.24 

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    Event date: 2022.1

    Language:Japanese   Presentation type:Oral presentation (general)  

  150. Functional nitrogen science for plasma-processing in life and matter Invited International conference

    Kenji Ishikawa, Toshiro Kaneko, and Masaru Hori

    2021.12.12  Material Research Society of Japan

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  151. Optical transmission of carbon nanowalls from ultra-violet region to infra-red region International conference

    Shintaro Iba, Hiroki Kondo, Kenji Ishikawa, Takayoshi Tsutsumi, Makoto Sekine, Mineo Hiramatsu, and Masaru Hori

    Material Research Meeting (MRM 2020)  2021.12.12 

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    Event date: 2021.12

    Presentation type:Oral presentation (general)  

    Venue:Yokohama   Country:Japan  

  152. Enhancement of biodegradation technology of polyethylene terephthalate with plasma-pretreatment International conference

    Daichi Goto, Naoyuki Iwata, Kenji Ishikawa, Hiroshi Hashizume, Hiromasa Tanaka, Masafumi Ito, and Masaru Hori

    31st Material Research Society in Japan (MRS-J)  2021.12.12 

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    Event date: 2021.12

    Presentation type:Oral presentation (general)  

    Venue:Yokohama   Country:Japan  

  153. Plasma-biological reaction networks and aqueous radical chemistry Invited International conference

    Kenji Ishkawa, Camelia Miron, Takashi Kondo, Hiromasa Tanaka, and Masaru Hori

    31st Material Research Society in Japan (MRS-J)  2021.12.12 

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    Event date: 2021.12

    Presentation type:Oral presentation (invited, special)  

    Venue:Yokohama   Country:Japan  

  154. Cellular Respiration System Affected by Low-temperature Plasma International conference

    Hiromasa Tanaka, Shogo Maeda, Shogo Matsumura, Masaaki Mizuno, Kenji Ishikawa, Masafumi Ito, Hiroshi Hashizume, Mikako Ito, Kinji Ohno, Kae Nakamura, Hiroaki Kajiyama, Fumitaka Kikkawa, Yasumasa Okazaki, Shinya Toyokuni, and Masaru Hori

    31st Material Research Society in Japan (MRS-J)  2021.12.12 

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    Event date: 2021.12

    Presentation type:Oral presentation (general)  

    Venue:Yokohama   Country:Japan  

  155. Effects of cold plasma treatment with rice seedlings in a paddy on yield and grain quality for different cultivars International conference

    Hiroshi Hashizume, Hidemi Kitano, Hiroko Mizuno, Akiko Abe, Kaoru Sanda, Genki Yuasa, Satoe Tohno, Hiromasa Tanaka, Kenji Ishikawa, Shogo Matsumoto, Hitoshi Sakakibara, Susumu Nikawa, Masayoshi Maeshima, Masaaki Mizuno, and Masaru Hori

    31st Material Research Society in Japan (MRS-J)  2021.12.12 

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    Event date: 2021.12

    Presentation type:Oral presentation (general)  

    Venue:Yokohama   Country:Japan  

  156. Anti-tumor effect of plasma-activated solution produced by the flowing system International conference

    Satoshi Kashiwagura, Naoyuki Iwata, Kenji Ishikawa, Hiroshi Hashizume, Camelia Miron, Kae Nakamura, Hiromasa Tanaka, Hiroaki Kajiyama, Shinya Toyokuni, Masaaki Mizuno, and Masaru Hori

    31st Material Research Society in Japan (MRS-J)  2021.12.12 

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    Event date: 2021.12

    Presentation type:Oral presentation (general)  

    Venue:Yokohama   Country:Japan  

  157. Production of plasma-activated Ringer's lactate solution with regulated surrounding atmosphere International conference

    Daiki Ito, Naoyuki Iwata, Kenji Ishikawa, Hiroshi Hashizume, Kae Nakamura, Camelia Miron, Hiromasa Tanaka, Hiroaki Kajiyama, Shinya Toyokuni, Masaaki Mizuno, and Masaru Hori

    31st Material Research Society in Japan (MRS-J)  2021.12.12 

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    Event date: 2021.12

    Presentation type:Oral presentation (general)  

    Venue:Yokohama   Country:Japan  

  158. Growth promotion of cultured feed Artemia irradiated with low-temperature plasma International conference

    Takumi Yamauchi, Naoyuki Iwata, Kenji Ishikawa, Hiroshi Hashizume, Hiromasa Tanaka, Shin'ichi Akiyama, and Masaru Hori

    31st Material Research Society in Japan (MRS-J)  2021.12.12 

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    Event date: 2021.12

    Presentation type:Oral presentation (general)  

    Venue:Yokohama   Country:Japan  

  159. Rebound Tailing Pulse method for water reformation International conference

    Naohiro Shimizu, Ranjit Borude, Reiko Tanaka, Kenji Ishikawa, Osamu Oda, Hiroki Hosoe, Satoru Ino, Yosuke Inoue, and Masaru Hori

    31st Material Research Society in Japan (MRS-J)  2021.12.12 

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    Event date: 2021.12

    Presentation type:Oral presentation (general)  

    Venue:Yokohama   Country:Japan  

  160. Transient effects in cyclic processes on fabrications of high-aspect-ratio trenches International conference

    Taito Yoshie, Takayoshi Tsutsumi, Kenji Ishikawa, and Masaru Hori

    42nd International Symposium on Dry Process (DPS)  2021.11.18 

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    Event date: 2021.11

    Presentation type:Oral presentation (general)  

    Venue:online   Country:Japan  

  161. Atomic layer etching of GaN using F2-added Ar plasma removal of BCl3 modified layer at high temperature International conference

    Shohei Nakamura Atsushi Tanide, Takahiro Kimura, Soichi Nadahara, Kenji Ishikawa, and Masaru Hori

    42nd International Symposium on Dry Process (DPS)  2021.11.18 

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    Event date: 2021.11

    Presentation type:Oral presentation (general)  

    Venue:online   Country:Japan  

  162. Random forest model for property control of plasma deposited hydrogenated amorphous carbon films International conference

    Junpei Kurokawa, Takayoshi Tsutsumi, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, and Masaru Hori

    42nd International Symposium on Dry Process (DPS)  2021.11.18 

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    Event date: 2021.11

    Presentation type:Oral presentation (general)  

    Venue:online   Country:Japan  

  163. Toward plasma cancer therapy and intracellular metabolic modifications by treatments using low-temperature plasma-activated solutions Invited International conference

    Kenji Ishkawa, Hiromasa Tanaka, Hiroaki Kajiyama, Shinya Toyokuni, Masaaki Mizuno, and Masaru Hori

    30th International Toki Conference on Plasma and Fusion Research  2021.11.15 

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    Event date: 2021.11

    Presentation type:Oral presentation (invited, special)  

    Venue:online   Country:Japan  

  164. Floating wire assisted plasma with vapor injection of liquid mixtures for etching titanium compounds International conference

    Thi-Thuy-Nga Nguyen, Kazunori Shinoda, Hirotaka Hamamura, Kenji Maeda, Kenetsu Yokogawa, Masaru Izawa, Kenji Ishikawa, and Masaru Hori

    67th AVS International Symposium and Exhibition  2021.10.24 

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    Event date: 2021.10

    Presentation type:Oral presentation (general)  

    Venue:online   Country:United States  

  165. In-situ analysis of surface reactions for plasma-assisted thermal-cyclic atomic layer etching of tantalum nitride International conference

    Kazunori Shinoda, M. Hasegawa, H. Hamamura, K. Maeda, K. Yokogawa, M. Izawa, Kenji Ishikawa, and Masaru Hori

    67th AVS International Symposium and Exhibition  2021.10.24 

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    Event date: 2021.10

    Presentation type:Oral presentation (general)  

    Venue:online   Country:United States  

  166. 原子層エッチングの反応素過程とその設計、制御 Invited

    石川 健治, Nguyen Thi-Thuy-Nga, 堤 隆嘉, 蕭 世男, 近藤 博基, 関根 誠, 堀 勝

    第82回応用物理学会秋季学術講演会 11a-S301-5  2021.9.10 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン  

  167. カーボンナノウォールの光透過率に対する壁密度および高さの効果 Invited

    射場 信太朗, 近藤 博基, 石川 健治, 堤 隆嘉, 平松 美根男, 関根 誠, 堀 勝

    第82回応用物理学会秋季学術講演会 13a-N323-8  2021.9.10 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン  

  168. C3H6/H2プラズマを⽤いたアモルファスカーボン成膜において水素ガス流量比が膜特性に与える影響 Invited

    ⿊川 純平, 光成 正, 堤 隆嘉, 近藤 博基, 関根 誠, 石川 健治, 堀 勝

    第82回応用物理学会秋季学術講演会 13p-N107-1  2021.9.10 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン  

  169. 低温プラズマ照射した養殖餌料アルテミアの成⻑促進 Invited

    山内 拓海, 石川 健治, 田中 宏昌, 秋山 真⼀, 橋爪 博司, 堀 勝

    第82回応用物理学会秋季学術講演会 13p-N107-15  2021.9.10 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン  

  170. CNW細胞培養基板上のSiCコートが細胞増殖に与える影響 Invited

    ⼩野 浩毅, ⼩出 崇史, 石川 健治, 田中 宏昌, 近藤 博基, 鳴瀧 彩絵, ⾦ 勇, 安原 重雄, 堀 勝, 竹内 和歌奈

    第82回応用物理学会秋季学術講演会 13p-N107-1  2021.9.10 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン  

  171. 酸素ラジカル照射したL-トリプトファン溶液の殺菌効果 Invited

    岩田 直幸, 石川 健治, 橋爪 博司, 田中 宏昌, 伊藤 昌文, 堀 勝

    第82回応用物理学会秋季学術講演会 12p-N204-6  2021.9.10 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン  

  172. 流液への照射によるプラズマ活性溶液の大量作製と抗腫瘍効果の評価 Invited

    柏倉 慧史, 岩田 直幸, 石川 健治, 橋爪 博司, カメリア ミロン, 中村 香江, 田中 宏昌, 梶山 広明, 豊國 伸哉, 水野 正明, 堀勝

    第82回応用物理学会秋季学術講演会 12p-N204-4  2021.9.10 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン  

  173. Arパージ下でプラズマ照射した乳酸リンゲル液の抗腫瘍効果の評価 Invited

    伊藤 大貴, 岩田 直幸, 石川 健治, 橋爪 博司, 中村 香江, ミロン カメリア, 田中 宏昌, 梶山 広明, 豊國 伸哉, 水野正明, 堀勝

    第82回応用物理学会秋季学術講演会 12p-N204-3  2021.9.10 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン  

  174. プラズマ活性溶液及びプラズマ照射が細胞呼吸に与える影響 Invited

    田中 宏昌, 前田 昌吾, 松村 翔伍, 水野 正明, 石川 健治, 伊藤 昌文, 橋爪 博司, 伊藤 美佳⼦, 大野 欽司, 中村 香江, 梶山広明, 吉川史隆, 岡崎泰昌, 豊國伸哉, 堀勝

    第82回応用物理学会秋季学術講演会 12p-N204-2  2021.9.10 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン  

  175. ポリエチレンテレフタラートの新しい生分解プラズマ技術の開発 Invited

    五藤 大智, 岩田 直幸, 石川 健治, 橋爪 博司, 田中 宏昌, 伊藤 昌文, 堀 勝

    第82回応用物理学会秋季学術講演会 12p-N204-1  2021.9.10 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン  

  176. Ar/C4F8/SF6を⽤いたガス変調サイクルプロセスにおける活性種の挙動 Invited

    吉江 泰斗, 堤 隆嘉, 石川 健治, 堀 勝

    第82回応用物理学会秋季学術講演会 12a-N102-3  2021.9.10 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン  

  177. 窒化ガリウムのプラズマエッチング中その場分光エリプソメトリー観測 Invited

    南 吏玖, 石川 健治, 堤 隆嘉, 近藤 博基, 関根 誠, ⼩田 修, 堀 勝

    第82回応用物理学会秋季学術講演会 12a-N102-2  2021.9.10 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン  

  178. Low-temperature plasma-activated solutions and metabolic modification Invited International conference

    Kenji Ishkawa, Hiromasa Tanaka, Hiroaki Kajiyama, Shinya Toyokuni, Masaaki Mizuno, and Masaru Hori

    5th Asia Pacific Conference on Plasma Physics, Division of Plasma Physics, Association of Asia-Pacific Physical Societies (AAPPS-DPP2021)  2021.9.26 

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    Event date: 2021.9 - 2021.10

    Presentation type:Oral presentation (invited, special)  

    Venue:online   Country:Japan  

  179. High ionization of analytes for oxygen doped carbon nanowall in surface-assisted laser desorption ionization mass spectrometry (SALDI-MS) International conference

    Kenji Ishikawa, Ryusei Sakai, Tomonori Ichikawa, Hiroki Kondo, Takayuki Ohta, Mineo Hiramatsu, and Masaru Hori

    20th Interfinish World Congress (INTERFINISH2020)  2021.9.6 

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    Event date: 2021.9

    Presentation type:Oral presentation (general)  

    Venue:online   Country:Japan  

  180. Improvement of Hydrophilic Treatment of Atmospheric Pressure Plasma and its Oxygen Radical Densities International conference

    Seigo Takashima, Takahiro Jindo, Kenji Ishikawa, and Masaru Hori

    20th Interfinish World Congress (INTERFINISH2020)  2021.9.6 

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    Event date: 2021.9

    Presentation type:Oral presentation (general)  

    Venue:online   Country:Japan  

  181. Epitaxial growth of InN film on GaN template by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) International conference

    Frank Wilson Amalraj, Arun Kumar Dhasiyan, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, and Masaru Hori

    20th Interfinish World Congress (INTERFINISH2020)  2021.9.6 

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    Event date: 2021.9

    Presentation type:Oral presentation (general)  

    Venue:online   Country:Japan  

  182. Deformation properties of carbon nanowalls analyzed by nanoindentation International conference

    Swapnil Ghodke, Motoyuki Murashima, Dennis Christy, Ngo Van Nong, Osamu Oda, Noritsugu Umehara, Kenji Ishikawa, and Masaru Hori

    20th Interfinish World Congress (INTERFINISH2020)  2021.9.6 

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    Event date: 2021.9

    Presentation type:Oral presentation (general)  

    Venue:online   Country:Japan  

  183. Nanosecond high-voltage pulse imposed chemical vapor deposition (ns HV CVD) of sparsely isolated carbon nanowalls International conference

    Tomonori Ichikawa, Kenji Ishikawa, Naohiro Shimizu, and Masaru Hori

    20th Interfinish World Congress (INTERFINISH2020)  2021.9.6 

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    Event date: 2021.9

    Presentation type:Oral presentation (general)  

    Venue:online   Country:Japan  

  184. Development of the nanocarbon coating process on metal surfaces via in-liquid plasma International conference

    Ma. Shanlene D.C. Dela Vega, Hiroki Kondo, Takayoshi Tsutsumi, Thi-Thuy-Nga Nguyen, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    20th Interfinish World Congress (INTERFINISH2020)  2021.9.6 

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    Event date: 2021.9

    Presentation type:Oral presentation (general)  

    Venue:online   Country:Japan  

  185. Development of new biodegradation technology by surface modification of polyethylene terephthalate using atmospheric pressure plasma International conference

    Daichi Goto, Naoyuki Iwata, Kenji Ishikawa, Hiroshi Hashizume, Hiromasa Tanaka, Masafumi Ito, and Masaru Hori

    20th Interfinish World Congress (INTERFINISH2020)  2021.9.6 

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    Event date: 2021.9

    Presentation type:Oral presentation (general)  

    Venue:online   Country:Japan  

  186. Cell Death Mechanisms by Plasma Activated Medium and Plasma Activated Ringer’s Lactate Solution International conference

    Masaru Hori, Hiromasa Tanaka, Masaaki Mizuno, Kenji Ishikawa, Kae Nakamura, Hiroaki Kajiyama, Yasumasa Okazaki, Shinya Toyokuni, and Fumitaka Kikkawa

    8th International Conference on Plasma Medicine (ICPM8)  2021.8.2 

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    Event date: 2021.8

    Presentation type:Oral presentation (invited, special)  

    Venue:online  

  187. Efficacy for Rice Plant Growth with Plasma Irradiation to Seeds International conference

    Hiroshi Hashizume, Hidemi Kitano, Hiroko Mizuno, Akiko Abe, Genki Yuasa, Satoe Tohno, Hiromasa Tanaka, Kenji Ishikawa, Shogo Matsumoto, Hitoshi Sakakibara, Susumu Nikawa, Masayoshi Maeshima, Masaaki Mizuno, and Masaru Hori

    8th International Conference on Plasma Medicine (ICPM8)  2021.8.2 

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    Event date: 2021.8

    Presentation type:Oral presentation (general)  

    Venue:online  

  188. Dynamical Changes in Free-radical Signals of Seeds during Water Imbibition and Seed Germination: Analysis of Plasma-Irradiation Effects Using an Electron Spin Resonance (ESR) Technique International conference

    Kenji Ishikawa, Ryo Arita, Takamasa Okumura, Pankaj Attri, Kazunori Koga, Ryoya Sato, Hayate Tanaka, Masaya Hiromatsu, Kayo Matsuo, Daisuke Yamashita, Kunihiro Kamataki, Naho Itagaki, Masaru Hori, and Masaharu Shiratani

    8th International Conference on Plasma Medicine (ICPM8)  2021.8.2 

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    Event date: 2021.8

    Presentation type:Oral presentation (general)  

    Venue:online  

  189. Analysis of Cellular Respiration in Plasma-activated Solutions-treated Cancer Cells International conference

    Hiromasa Tanaka, Shogo Maeda, Masaaki Mizuno, Kenji Ishikawa, Kae Nakamura, Hiroaki Kajiyama, Yasumasa Okazaki, Shinaya Toyokuni, M. Ito, K. Ohno, Fumitaka Kikkawa, and Masaru Hori

    8th International Conference on Plasma Medicine (ICPM8)  2021.8.2 

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    Event date: 2021.8

    Presentation type:Oral presentation (general)  

    Venue:online  

  190. Numerical analysis of high-electron-density atmospheric pressure argon streamer under pin-to-plane electrode geometry: Effects of applying voltage polarity International conference

    Yosuke Sato, Kenji Ishikawa, Takayoshi Tsutsumi, A. Ui, M. Akita, S. Oka, and Masaru Hori

    47th Conference on Plasma Physics (EPS47)  2021.6.21 

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    Event date: 2021.6

    Presentation type:Oral presentation (general)  

    Venue:online  

  191. Dependency of bactericidal effect in oxygen-radical exposed E. coli suspension containing L-tryptophan on its concentration International conference

    Naoyuki Iwata, Kenji Ishikawa, Hiroshi Hashizume, Hiromasa Tanaka, Jun-Seok Oh, Masafumi Ito and Masaru Hori

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Japan  

  192. Measurements of negative ion density and plasma parameters in Ar/O2/C4F8 etching plasmas by Langmuir probe-assisted laser photodetachment International conference

    B. B. Sahu, S.Hattori, T. Tsutsumi, N. Britun, Makoto Sekine, Kenji Ishikawa, H. Tanaka,T. Gohira, Y. Ohya, Noriyasu Ohno, and Masaru Hori

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Japan  

  193. Selective killing effects of organics in plasma-activated Ringer's solutions International conference

    Yuki Suda, Kenji Ishikawa, Hiroshi Hashizume, Hiromasa Tanaka and Masaru Hori

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Japan  

  194. Reversible change in surface morphology of lipid bilayer induced by indirect plasma irradiation International conference

    Hiroki Kondo, Takuya Tonami, Sotaro Yamaoka, Hiromasa Tanaka, Kenji Ishikawa, Makoto Sekine, Masafumi Ito and Masaru Hori

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Japan  

  195. Enhancement of alcohol production of budding yeast by direct irradiation of nonequilibrium atmospheric pressure plasma International conference

    Shogo Matsumura, Kenji Ishikawa, Hiromasa Tanaka, Hiroshi Hashizume, Masafumi Ito, and Masaru Hori

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Japan  

  196. Effect of wall-to-wall distance of carbon nanowalls on survival yield in surface assisted laser desorption/ionization mass spectrometry International conference

    Ryusei Sakai, Hiroki Kondo, Kenji Ishikawa, Takayuki Ohta, Mineo Hiramatsu, Naohiro Shimizu, and Masaru Hori

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Japan  

  197. Quality increase of fruits with plasma treatment on strawberry cultivation International conference

    Hiroshi Hashizume, Shogo Matsumoto, Kenki Tsubota, Kaoru Sanda, Hiroko Mizuno, Akiko Abe, Genki Yuasa, Satoe Tohno, Hiromasa Tanaka, Kenji Ishikawa, Masafumi Ito, Hidemi Kitano, Hitoshi Sakakibara, Susumu Nikawa, Takayuki Okuma, Masayoshi Maeshima,Masaaki Mizuno, and Masaru Hori

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Japan  

  198. Design of removal process of SnO2 on glass by H2/Ar plasma at atmospheric pressure and medium pressure International conference

    Thi-Thuy-Nga Nguyen, Minoru Sasaki, Takayoshi Tsutsumi, Kenji Ishikawa, and Masaru Hori

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Japan  

  199. Crystalline structures and local electrical conductivity at crossing points of carbon nanowalls International conference

    Atsushi Ozaki, Hiroki Kondo, Kenji Ishikawa, Takayoshi Tsutsumi, Makoto Sekine, Mineo Hiramatsu and Masaru Hori

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Japan  

  200. A comparative study on inn growth at very high frequencies (VHF) by radical enhanced metalorganic chemical vapor deposition (REMOCVD) International conference

    Frank Wilson Amalraj, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, and Masaru Hori

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Japan  

  201. IR spectra of monosaccharide treated with atmospheric pressure plasma using sum frequency generation spectroscopy International conference

    Yuta Yoshida, Takayuki Ohta, Kenji Ishikawa, and Masaru Hori

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Japan  

  202. Effects of non-equilibrium atmospheric pressure plasma on aquaculture feed International conference

    Takumi Yamauchi, Kenji Ishikawa, Hiromasa Tanaka, Shin'ichi Akiyama, Hiroshi Hashizume and Masaru Hori

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Japan  

  203. Efficacy of plasma treatment in a paddy field for yield and grain quality of rice International conference

    Kaoru Sanda, Hiroshi Hashizume, Hidemi Kitano, Hiroko Mizuno, Akiko Abe, Genki Yuasa, Satoe Tohno, Hiromasa Tanaka, Kenji Ishikawa, Shogo Matsumoto, Hitoshi Sakakibara, Susumu Nikawa, Masayoshi Maeshima, Masaaki Mizuno, and Masaru Hori

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Japan  

  204. Dependence of nitrogen concentrations on cytotoxicity of air-free Ar-N2 mixed atmospheric pressure plasma-activated lactated solutions International conference

    Daiki Ito, Kenji Ishikawa, Hiroshi Hashizume, Hiromasa Tanaka, Takayoshi Tsutsumi, Hiroki Kondo, Makoto Sekine, and Masaru Hori

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Japan  

  205. Effects on substrate temperature on the etching behaviors of PECVD- and LPCVD-prepared SiN thin films with CF4/H2 plasmas International conference

    Shih-Nan Hsiao, Thi-Thuy-Nga Nguyen, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Japan  

  206. Ion-attachment mass spectrometric analysis of odorous gas decomposition by atmospheric pressure plasma International conference

    Tatsuyuki Moriyama, Yosuke Sato, Akio Ui, Shotaro Oka, Kenji Ishikawa, Takayoshi Tsutsumi and Masaru Hori

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Japan  

  207. Study of etching process using gas condensed layer at cryogenic temperature 2. Evaluation of cycle etching using gas condensed layer International conference

    Masahiro Hazumi, Suganthamalar Selvaraj, Shih-Nan Hsiao, Chihiro Abe, Toshiyuki Sasaki, Hisataka Hayashi, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Japan  

  208. Study of etching process using gas condensed layer at cryogenic temperature 1. Evaluation of CHF3 condensed layer thickness on SiO2 surface International conference

    Suganthamalar Selvaraj, Masahiro Hazumi, Shih-Nan Hsiao, Chihiro Abe, Toshiyuki Sasaki, Hisataka Hayashi, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Japan  

  209. Pressure and flow rate dependence of active species in gas modulation cycle process using Ar/C4F8/SF6 International conference

    Taito Yoshie, Takayoshi Tsutsumi, Kenji Ishikawa, and Masaru Hori

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Japan  

  210. Quantitative analyses of graphene layer etching using oxygen radicals generated in remote plasma for realization of atomic layer etching International conference

    Liugang Hu, Takayoshi Tsutsumi, Thi-Thuy-Nga Nguyen, Shih-Nan Hsiao, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Japan  

  211. Atomic Layer Etching of GaN Using Cl2/Ar Plasma at 400℃ International conference

    Shohei Nakamura, Atsushi Tanide, Takahiro Kimura, Soichi Nadahara, Kenji Ishikawa, and Masaru Hori

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Japan  

  212. Initial growth kinetics of hydrogenated amorphous carbon films observed by real-time ellipsometry International conference

    Jumpei Kurokawa, Hiroki Kondo, Kenji Ishikawa, Takayoshi Tsutsumi,Makoto Sekine and Masaru Hori

    13th International Symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials / 14th International Conference on Plasma-Nano Technology & Science (ISPlasma2021/IC-PLANTS2021)  2021.3.8 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Japan  

  213. Plasma applications for agriculture from seeds to field International conference

    Hiroshi Hashizume, Hiroko Mizuno, Akiko Abe, Kenki Tsubota, Genki Yuasa, Satoe Tohno, Mikiko Kojima, Yumiko Takebayashi, Hiromasa Tanaka, Kenji Ishikawa, Masafumi Ito, Hidemi Kitano, Shogo Matsumoto, Hitoshi Sakakibara, Takayuki Okuma, Susumu Nikawa, Masayoshi Maeshima, Masaaki Mizuno, and Masaru Hori

    3rd international workshop on plasma agriculture (IWOPA3) Greifswald, Germany. online, March 1-3, 2021  2021.3.1 

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    Event date: 2021.3

    Country:Germany  

  214. Roles of seed pigments in responses of seeds to plasma treatment International conference

    Kazunori Koga, Pankaj Attri, Ryo Arita, Ryoya Sato, Hayate Tanaka, Masaya Hiromatsu, Kayo Matsuo, Daisuke Yamashita, Kenji Ishikawa, Naho Itagaki, Kunihiro Kamataki, Masaharu Shiratani, and Vida Mildaziene

    3rd international workshop on plasma agriculture (IWOPA3) Greifswald, Germany. online, March 1-3, 2021  2021.3.1 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Germany  

  215. Electron spin resonace study on germination dynamics of plasma-activated seeds of radish sprouts International conference

    Kenji Ishikawa, Ryo Arita, Ryoya Sato, Hayate Tanaka, Masaya Hiromatsu, Tomoaki Yoshida, Pankaj Attri, Kunihiro Kamataki, Naho Itagaki, Daisuke Yamashita, Kayo Matsuo, Kazunori Koga, and Masaharu Shiratani

    3rd international workshop on plasma agriculture (IWOPA3) Greifswald, Germany. online, March 1-3, 2021  2021.3.1 

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    Event date: 2021.3

    Presentation type:Oral presentation (general)  

    Country:Germany  

  216. (Plenary) Plasma-surface interactions in plasma etching of future device fabrication International conference

    Kenji Ishikawa, Y. Miyawaki, T. Takeuchi, K. Takeda, S. Tajima, H. Kondo, T. Hayashi, M. Sekine, and M. Hori

    The 16th International Workshop on Advanced Plasma Processing and Diagnostics 

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    Event date: 2013.1

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  217. Plasma-Biological Surface Interaction for Food Hygiene: Real-time in situ electron spin resonance measurements International conference

    Kenji Ishikawa, H. Mizuno, H. Tanaka, H. Hashizume, T. Ohta, M. Ito, K. Takeda, H. Kondo, M. Sekine, and M. Hori

    The 34th International Symposium on Dry Process (DPS) 

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    Event date: 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  218. A High Temperature Plasma Etching of GaN and Its Reaction Mechanism International conference

    R. Kometani, S. Chen, M. Liu, Kenji Ishikawa, H. Kondo, K. Takeda, T. Egawa, H. Amano, M. Sekine, and M. Hori

    The 34th International Symposium on Dry Process (DPS) 

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    Event date: 2012.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  219. Studies on Plasma Etching of Si3N4 in Capacitively Coupled Plasma employing C5HF7 International conference

    Y. Miyawaki, Y. Kondo, M. Sekine, Kenji Ishikawa, T. Hayashi, K. Takeda, A. Ito, H. Matsumoto, and M. Hori

    The 34th International Symposium on Dry Process (DPS) 

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    Event date: 2012.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  220. A reduction of degradation on ArF photoresist by C5HF7 plasma etching and its mechanism International conference

    K. Asano, Y. Miyawaki, Kenji Ishikawa, M. Sekine, K. Takeda, A. Ito, H. Matsumoto, H. Kondo, and M. Hori

    The 34th International Symposium on Dry Process (DPS) 

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    Event date: 2012.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  221. Quantum chemical investigations for excitation dissociations of C5F8 and C5HF7 etching gases International conference

    T. Hayashi, Kenji Ishikawa, M. Sekine, M. Hori

    The 34th International Symposium on Dry Process (DPS) 

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    Event date: 2012.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  222. Highly selective etching of gap-fill dielectrics over SiC and SiN by the dc-bias superposed dual-frequency CCP International conference

    T. Komuro, K. Takeda, Kenji Ishikawa, M. Sekine, Y. Ohya, H. Kondo, and M. Hori

    The 34th International Symposium on Dry Process (DPS) 

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    Event date: 2012.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  223. Photon-stimulated surface reaction and generation of damage to hydrogenated silicon nitride in fluorocarbon plasma International conference

    M. Fukasawa, H. Matsugai, T. Honda, Y. Miyawaki, Y. Kondo, K. Takeda, H. Kondo, Kenji Ishikawa, M. Sekine, K. Nagahata, F. Uesawa, M. Hori, and T. Tatsumi

    The 34th International Symposium on Dry Process (DPS) 

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    Event date: 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  224. An in-situ sequential H and N radical exposure process for recovery of plasma-damaged GaN International conference

    Z. Liu, S. Chen, Y. Lu, R. Kometani, Kenji Ishikawa, H. Kano, K. Takeda, H. Kondo, M. Sekine, T. Egawa, H. Amano, and M. Hori

    The 34th International Symposium on Dry Process (DPS) 

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    Event date: 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  225. High performances of microcrystalline Si thin film formation for a solar cell by measurement and control of hydrogen radicals in the SiH4/H2 plasma International conference

    Y. Abe, A. Fukushima, Y. Lu, Y. Kim, K. Takeda, H. Kondo, Kenji Ishikawa, M. Sekine, and M. Hori

    The 34th International Symposium on Dry Process (DPS) 

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    Event date: 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  226. Evaluation of gas-surface reaction dynamics during the plasmaless Si etching using NO/F2 gas mixture International conference

    S. Tajima, T. Hayashi, Kenji Ishikawa, M. Sekine, and M. Hori

    The 34th International Symposium on Dry Process (DPS) 

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    Event date: 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  227. (INVITED) Real time In Situ Electron Spin Resonance (ESR) Study of Free Radicals on Materials Created by Plasmas International conference

    Kenji Ishikawa,

    American Vacuum Society (AVS) 

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    Event date: 2012.10 - 2012.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  228. (Coburn Winters Finalist) Mechanism of Generating Ions and Radicals in Fluorocarbon Plasma Investigated by Reaction Model Analysis International conference

    Yusuke Kondo, Kenji Ishikawa,

    American Vacuum Society (AVS) 

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    Event date: 2012.10 - 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  229. Subsequent Temporal Change of Gaseous H and N Radical Density in Plasma after Different Processes International conference

    Toshiya Suzuki, Kenji Ishikawa,

    American Vacuum Society (AVS) 

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    Event date: 2012.10 - 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  230. Investigation of Plasma-Surface Interactions Between Hydrogen Radical and Chemically Amplified Photoresist International conference

    Arkadiusz Malinowski, Makoto Sekine, Kenji Ishikawa,

    American Vacuum Society (AVS) 

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    Event date: 2012.10 - 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  231. Evaluation of Surface Chemical Bonding State and Surface Roughness of Chemical Dry Etched Si using NO and F2 Gas Mixture International conference

    Satomi Tajima, Toshio Hayashi, Kenji Ishikawa, Makoto Sekine, and Masaru Hori

    American Vacuum Society (AVS) 

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    Event date: 2012.10 - 2012.11

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  232. Control of Surface Properties on Plasma-Etched Gallium Nitride (GaN) International conference

    Makoto Sekine, Ryosuke Kometani, Kenji Ishikawa,

    American Vacuum Society (AVS) 

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    Event date: 2012.10 - 2012.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  233. Measurement of activated species generated by 60 Hz excited atmospheric pressure Ar plasma in atmospheric gas International conference

    Keigo Takeda, Jerome Jolibois, Kenji Ishikawa, Hiromasa Tanaka, Hiroyuki Kano, Makoto Sekine, and Masaru Hori

    65th Annual Gaseous Electronics Conference (GEC) 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  234. Reaction model for etching surface interacted with hydrofluorocarbon plasmas International conference

    Kenji Ishikawa, Yusuke Kondo, Yudai Miyawaki, Toshio Hayashi, Makoto Sekine, Keigo Takeda, Hiroki Kondo, and Masaru Hori

    65th Annual Gaseous Electronics Conference (GEC) 

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    Event date: 2012.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  235. Study on synthesis processes and crystallinity changes of nanographene materials synthesized by alcohol liquid-plasma International conference

    Hiroki Kondo, Tatusya Hagino, Keigo Takeda, Kenji Ishikawa, Hiroyuki Kano, Makoto Sekine, and Masaru Hori

    65th Annual Gaseous Electronics Conference (GEC) 

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    Event date: 2012.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  236. Precise plasma process control based on combinatorial plasma etching International conference

    Makoto Sekine, Toshiya Suzuki, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Yuichi Setsuhara, Masaharu Shiratani, and Masaru Hori

    65th Annual Gaseous Electronics Conference (GEC) 

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    Event date: 2012.10

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  237. Temperature measurement of substrate with a thin film using low-coherence interference International conference

    Takayoshi Tsutsumi, Takehiro Hiraoka, Keigo Takeda, Kenji Ishikawa, Hiroki Kondo, Takayuki Ohta, Masafumi Ito, Makoto Sekine, and Masaru Hori

    65th Annual Gaseous Electronics Conference (GEC) 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  238. (Invited) Healing Process of Plasma Damaged Gallium Nitride (GaN) International conference

    Kenji Ishikawa, Shang Chen,

    International conference on emerging advanced nanomaterials (ICEAN) 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  239. Study of the decomposition mechanism of PMMA-type polymers by hydrogen radicals International conference

    Yu Arai, Yusuke Noto, Yousuke Goto, Seiji Takahashi, Akihiko Kono, Tatsuo Ishijima, Kenji Ishikawa, Masaru Hori, and Hideo Horibe

    7th International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD-7) 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  240. Estimation of activation energies for decomposition reaction of polymer by hydrogen radicals generated using hot-wire catalyzer International conference

    Akihiko Kono, Yu Arai, Yousuke Goto, Seiji Takahashi, Kenji Ishikawa, Masaru Hori, and Hideo Horibe

    7th International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD-7) 

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    Event date: 2012.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  241. Real-time electron-spin-resonance measurement of plasma induced surface interactions International conference

    Naoya Sumi, Kenji Ishikawa, Akihiko Kono, Hideo Horibe, Keigo Takeda, Hiroki Kondo, Makoto Sekine and Masaru Hori

    3rd International Symposium on Advance Plasma Science and its Application (ISPlasma2010) 

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    Event date: 2011.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  242. (INVITED) Surface analysis of chemical reactions during plasma etching

    Kenji Ishikawa, et al.

    133th Workshop on Silicon Technology 

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    Event date: 2011.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  243. (INVITED) Real-time Electron-Spin-Resonance Study of Plasma-Surface interaction International conference

    Kenji Ishikawa, Naoya Sumi, Akihiko Kono, Hideo Horibe, Keigo Takeda, Hiroki Kondo, Makoto Sekine and Masaru Hori

    12th International Workshop of Advanced Plasma Processing and Diagnostics Joint Workshop 

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    Event date: 2011.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  244. (INVITED) In line Electron Spin Resonance Study of Plasma-Surface Interaction for plasma etching

    Kenji Ishikawa, Makoto Sekine, Masaru Hori

    20th MRS-Japan Academic Symposium, Session A: Frontier of Nano-Materials Based on Advanced Plasma Technologies 

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    Event date: 2010.12

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  245. Polymer Surface Modification: Vibrational Sum Frequency Generation Study for Plasma Etching International conference

    Kenji Ishikawa, Keigo Takeda, Hiroki Kondo, Makoto Sekine, Masaru Hori

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    Event date: 2010.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:United States  

  246. (INVITED) In line electron spin resonance observation of surface reactions during plasma etching

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  247. エタノールを用いた気液プラズマによるカーボンナノ材料の作製

    萩野達也,乾裕俊,加納浩之,石川建治,竹田圭吾,近藤博基,関根誠,堀勝

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 14a-ZK-6" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  248. カーボンナノウォールの成長に対する基板形状の効果

    渡邊均,近藤博基,石川健治,竹田圭吾,関根誠,堀勝,平松美根男

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 16p-ZM-3" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  249. 和周波振動分光(SFG)によるポリフッ化ビニリデンの分極配向特性評価

    石川健治,河野昭彦,堀邊英夫,竹田圭吾,近藤博基,関根誠,堀勝

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 14a-K-2" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  250. 単一カーボンナノウォールの電気特性

    神田貴幸,山川晃司,竹田圭吾,石川健冶,近藤博基,平松美根男,関根誠,堀勝

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 16a-ZQ-6" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  251. Spatial distribution measurement of the electron temperature and density of 60 Hz nonequilibrium atmospheric pressure plasma by laser Thomson scattering

    賈鳳東,鷲見直也,石川健治,加納浩之,乾裕俊,竹田圭吾,近藤博基,関根誠,堀勝

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 15p-D-4" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  252. N原子注入によるアモルファスカーボン膜の結晶性制御

    九鬼淳,木野徳重,竹田圭吾,石川健治,近藤博基,関根誠,堀勝

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 16p-ZF-2" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  253. 水素ラジカル注入型プラズマ源を用いた微結晶シリコン薄膜の成膜

    川嶋翔,阿部祐介,竹田圭吾,石川健治,近藤博基,関根誠,堀勝

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 16a-ZF-8" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  254. 非平衡大気圧プラズマによるミドリカビ殺菌速度の酸素ラジカル密度依存性

    井関紗千子,太田貴之,伊藤昌文,加納浩之,東島康裕,竹田圭吾,石川健治,近藤博基,関根誠,堀勝

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 15p-D-17" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  255. 非平衡大気圧プラズマにおける原子状ラジカルの挙動に関する研究

    加藤正規,竹田圭吾,石川健治,近藤博基,関根誠,堀勝

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 15p-D-16" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  256. 太陽電池用シリコン薄膜プラズマプロセスにおける水素原子表面損失確率(II)

    阿部祐介,竹田圭吾,石川健治,近藤博基,関根誠,堀勝

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 15p-D-11" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  257. アモルファスカーボン膜の結晶構造に対する成長温度の効果

    木野徳重,近藤博基,石川健治,関根誠,堀勝

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 16p-ZF-3" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  258. プラズマによるGaNエッチング損傷と反応機構の解析

    陳尚,米谷亮祐,竹田圭吾,石川健治,近藤博基,加納浩之,徳田豊,関根誠,節原裕一,江川孝志,天野浩,堀勝

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 17a-ZA-3" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  259. 高精度Cl2プラズマビームを用いたGaNエッチング表面反応の解明

    米谷亮祐,陳尚,竹田圭吾,石川健治,近藤博基,関根誠,江川孝志,節原裕一,天野浩,堀勝

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 17a-ZA-2" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  260. リアルタイム電子スピン共鳴によるプラズマ誘起表面反応の解析

    鷲見直也,石川健冶,河野昭彦,堀邊英夫,竹田圭吾,近藤博基,関根誠,堀勝

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 16p-ZA-13" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  261. O2プラズマ曝露によるポーラスSiOCH 膜へのダメージ発生メカニズム

    浅野高平,山本洋,竹田圭吾,石川健治,近藤博基,関根誠,堀勝

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 16p-ZA-12" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  262. 二周波容量結合型エッチングプラズマにおける上部電極へのDCバイアス印加効果(III)

    山口剛,竹田圭吾,輿水地塩,近藤博基,石川健治,関根誠,堀勝

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 16p-ZA-9" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  263. サブナノメーター形状揺らぎ制御有機膜エッチングのための主要因子の解明

    鈴木俊哉,竹田圭吾,近藤博基,石川健治,関根 誠,堀勝

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 16p-ZA-8" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  264. C5HF7/O2/ArプラズマによるArFレジスト表面ラフネス発生抑制機構

    山本洋,宮脇雄大,竹田圭吾,石川健治,近藤博基,関根誠,堀勝,伊東安曇,松本裕一

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 16p-ZA-6" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  265. ガスデザインに基づいたSiO2膜エッチングとその機構解明(III)

    宮脇雄大,近藤祐介,竹田圭吾,伊東安曇,松本裕一,近藤博基,石川健治,関根誠,堀勝

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 16p-ZA-5" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  266. フルオロカーボンプラズマビームによるフォトレジスト表面改質層の解析

    竹内拓,尼崎新平,竹田圭吾,石川健治,近藤博基,豊田浩孝,関根誠,堀勝,康松潤,沢田郁夫

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 16p-ZA-4" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  267. ラジカルが発生し易いエッチングガスと分子構造

    林俊雄,石川健治,関根誠,堀勝,河野明廣,鄒弘綱

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 16p-ZA-2" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  268. C3F6O代替ガスを用いた絶縁膜の高速エッチングとその機構解明

    近藤祐介,宮脇雄大,竹田圭吾,石川健治,近藤博基,林俊雄,関根誠,岡本秀一,堀勝

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 16p-ZA-1" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  269. Radical Transport Simulation under Roof on Substrate in Processing Plasma

    アルカディウス マリノフスキ,堀勝,関根誠,石川健治,近藤博基,山本洋,竹内拓也,鈴木俊哉,宮脇雄大,リディア ルカシャック,アンジェイ ヤクボフスキ,ダニエル トマシェフスキ

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学), 16a-ZA-7" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  270. SF6/O2プラズマを用いたSiエッチング機構

    尼崎新平,竹内拓也,竹田圭吾,石川健治,近藤博基,関根誠,堀勝,櫻井典子,林久貴,酒井伊都子,大岩徳久

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学),16a-ZA-3" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  271. H2/Ar大気圧プラズマによる酸化銅還元反応の検討

    乾裕俊,吉田直史,竹田圭吾,近藤博基,石川健治,関根誠,堀勝

    "2010年秋季 第71回 応用物理学会学術講演会(長崎大学),16p-ZF-10" 

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    Event date: 2010.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  272. Modification of Si-O-Si Structure in Porous SiOCH Films by O2 plasma International conference

    Hiroshi Yamamoto, Keigo Takeda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru Hori

    The 11th International Workshop on Advanced Plasma Processing and Diagnostics, Ramada Jeju Hotel, Jeju, Korea 

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    Event date: 2010.7

    Language:English   Presentation type:Oral presentation (general)  

  273. Control in optical properties of amorphous carbon films synthesized by plasma enhanced chemical vapor deposition for solar cell applications

    International Symposium on Technology Evolution for Silicon Nano-Electronics, Tokyo Institute of Technology, Tokyo, Japan 

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    Event date: 2010.6

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  274. イオン照射誘起深い準位欠陥の水素ラジカルによる不活性化

    陳尚,永江陽一,石川健治,中井雅文,加納浩之,竹田圭吾,近藤博基,徳田豊,関根誠,堀勝

    2010年春季 第57回 応用物理学関係連合講演会(東海大学), 17p-D-7 

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    Event date: 2010.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  275. プラズマCVD法における微結晶シリコン薄膜形成のメカニズム解明

    川嶋翔,阿部祐介,竹田圭吾,石川健治,近藤博基,関根誠,堀  勝

    2010年春季 第57回 応用物理学関係連合講演会(東海大学), 19a-ZB-8 

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    Event date: 2010.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  276. ポーラスSiOCH low-k膜へのH2/N2プラズマアッシングダメージ発生機構の解明(II)

    山本洋,竹田圭吾,石川健治,近藤博基,関根誠,堀勝,上夏井健,林久貴,酒井伊都子,大岩徳久

    2010年春季 第57回 応用物理学関係連合講演会(東海大学), 18a-ZD-8 

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    Event date: 2010.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  277. 反応性プラズマ中におけるc-C4F8の解離過程

    林俊雄,石川健治,関根誠,堀勝,河野明廣,鄒弘綱

    2010年春季 第57回 応用物理学関係連合講演会(東海大学), 18a-ZD-10 

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    Event date: 2010.3

    Language:Japanese  

  278. 反応性プラズマ中におけるC2F4の解離過程

    林俊雄,石川健治,関根誠,堀勝,河野明廣,鄒弘綱

    2010年春季 第57回 応用物理学関係連合講演会(東海大学), 19a-ZB-11 

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    Event date: 2010.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  279. O2プラズマおよびCO2プラズマによるレジストアッシング機構

    阿部祐介,竹田圭吾,石川健治,近藤博基,関根誠,堀勝

    2010年春季 第57回 応用物理学関係連合講演会(東海大学), 18p-ZD-2 

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    Event date: 2010.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  280. SF6/O2プラズマによるフォトレジスト表面改質層の解析

    竹内拓也,尼崎新平,竹田圭吾,石川健治,近藤博基,関根誠,堀勝

    2010年春季 第57回 応用物理学関係連合講演会(東海大学), 18p-ZD-3 

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    Event date: 2010.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  281. ガスデザインに基づいたSiO2膜エッチングとその機構解明(II)

    宮脇雄大,竹田圭吾,伊東安曇,中村昌洋,石川健治,関根誠,堀勝

    2010年春季 第57回 応用物理学関係連合講演会(東海大学), 18p-ZD-9 

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    Event date: 2010.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  282. ポーラスSiOCH膜プラズマ処理後の大気曝露の影響(II)

    鈴木俊哉,山本洋,竹田圭吾,近藤博基,石川健治,関根誠,堀勝

    2010年春季 第57回 応用物理学関係連合講演会(東海大学), 18p-ZD-10 

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    Event date: 2010.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  283. 誘導結合型H2/N2プラズマによる有機low-k薄膜のための小型コンビナトリアルプラズマエッチングプロセス

    堀勝,チャンソン ムン,竹田圭吾,関根誠,節原裕一,白谷正治,石川健治,近藤博基

    2010年春季 第57回 応用物理学関係連合講演会(東海大学), 18p-ZD-18 

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    Event date: 2010.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

  284. 和周波振動分光によるプラズマ処理表面の解析

    石川健治,竹田圭吾,近藤博基,関根誠,堀勝

    2010年春季 第57回 応用物理学関係連合講演会(東海大学), 19a-R-14 

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    Event date: 2010.3

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  285. Dissociation channel of c-C4F8 to CF2 radical in reactive plasma

    The 3rd International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2010), Meijo University, Nagoya Japan 

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    Event date: 2010.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  286. Quasi-Bragg grating with sub-wavelength particles

    The 3rd International Conference on PLAsma-Nano Technology & Science (IC-PLANTS2010), Meijo University, Nagoya Japan 

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    Event date: 2010.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  287. Radical Kinetics in N2-H2 Plasma Generated by Novel High Density Radical Source

    The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan 

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    Event date: 2010.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  288. Siloxane Polymer Surface Modifications by Exposure of Plasma-Beams: A Vibrational Sum-Frequency Generation Spectroscopy (SFG) Study

    The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan 

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    Event date: 2010.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  289. Fabrication of carbon nanomaterials synthesized by plasma enhanced chemical vapor deposition for solar cell applications

    The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan 

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    Event date: 2010.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  290. Diagnostics in High Pressure SiH4/H2 Plasma for Deposition of Microcrystalline Si

    The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan 

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    Event date: 2010.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  291. Synthesis of Amorphous Carbon Films using Nonequilibrium Atmosperic-Pressure Plasma

    The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan 

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    Event date: 2010.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  292. Low-Temperature Treatment Using High-Density Non-Equilibrium Atmospheric of Pressure Plasma

    The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan 

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    Event date: 2010.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  293. Effect of Plasma Surface Treatments on Supporting of Platinum Nanoparticles to Graphite Materials in Supercritical Carbon Dioxide

    The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan 

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    Event date: 2010.3

    Language:Japanese   Presentation type:Poster presentation  

    Country:Japan  

  294. Effect of Ion Irradiation on Carbon Nanowalls Growth

    The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan 

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    Event date: 2010.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  295. Initial Nucleation in Carbon Nnowalls Growth on Si and SiO2 Surface

    The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan 

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    Event date: 2010.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  296. Effect of Oxygen Etching on the Morphologies of Carbon Nanowalls

    The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan 

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    Event date: 2010.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  297. Measurement of Si Wafer Temperature with Metal Thin Film during Plasma Process Using Low-Coherence Interferometer

    The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan 

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    Event date: 2010.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  298. Deep-Level Defect Passivation by High Density Hydrogen Radical Exposure on Ion Irradiated Si

    The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan 

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    Event date: 2010.3

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  299. Analysis of ArF Photoresist Modified by Fluorocarbon Ion Bombardment

    The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan 

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    Event date: 2010.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  300. SiO2 Cotact Hole Etch Mechanism Using Environment-Friendly New Gas, C5F7H

    The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan 

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    Event date: 2010.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  301. Porous SiOCH Low-k Film Etch Process and its Surface Reactions Employing an Alternative Fluorocarbon Gas C5F10O

    The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan 

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    Event date: 2010.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  302. Modeling of Radical Tranformation under `PAPE' Structure and Method of Estimation for Surface Loss Probabilities of Radicals

    The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan 

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    Event date: 2010.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  303. Measurement of H Radical Density in H2/Ar Nonequilibrium Atmospheric Pressure Plasma

    The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan 

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    Event date: 2010.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  304. Surface Loss Probabilities of H Atom on Various Silicon Thin Films

    The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan 

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    Event date: 2010.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  305. A Well-Established Compact Combinatorial Etching Process Employing Inductively Coupled H2/N2 Plasma

    The 2nd International Symposium on Advance Plasma Science and its Application (ISPlasma2010), Meijo University, Nagoya Japan 

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    Event date: 2010.3

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  306. Nanoscale engineering for plasma etching of future device fabrication International conference

    The 10th International Workshop of Advanced Plasma Processing and Diagnostics 

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    Event date: 2010.1

    Language:English   Presentation type:Oral presentation (invited, special)  

  307. A new framework for performance prediction of advanced MOSFETs with plasma-induced recess structure and latent defect site International conference

    2008 IEEE International Electron Devices Meeting (IEDM), (San Francisco, U.S.A., December 15-17, 2008), 18-2, pp. 443-447. 

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    Event date: 2008.12

    Language:English   Presentation type:Oral presentation (general)  

  308. Enhancing Yield and Reliability by Applying Dry Organic Acid Vapor Cleaning to Copper Contact Via-Bottom for 32-nm Nodes and Beyond International conference

    The 11th International Interconnect Technology Conference (IITC) 2008, (San Francisco, June 10-12, 2008), pp. 93-96. 

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    Event date: 2008.6

    Language:English   Presentation type:Oral presentation (general)  

  309. Reaction mechanism of low-temperature damageless cleaning of Cu2O by HCOOH International conference

    Advanced Metallization Conference (AMC) 2006: 16th Asian Session, (Tokyo, September 25-27, 2006), No. 3-6, pp. 111-116. 

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    Event date: 2006.9

    Language:English   Presentation type:Oral presentation (general)  

  310. Large Reduction in Standby Power Consumption Achieved with Stress-controlled SRAM Cell Layout International conference

    Ext. Abst. the 2006 International conference on Solid State Devices and Materials (SSDM), (Yokohama, Japan, September 12-15, 2006), H-2-2, pp. 172-173. 

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    Event date: 2006.9

    Language:English  

    Country:Japan  

  311. Reduction of Copper Surface with Formic Acid for 32-nm-Node ULSI Metallization: Surface Kinetics Study International conference

    The 209th Electrochemical Society Spring Meeting (ECS) (Colorado, U.S.A., May 7-12, 2006), vol. 601, p. 828. 

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    Event date: 2006.5

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  312. Plasma emission irradiation effects on etching surface reactions: Analysis using in-vacuo electron-spin-resonance technique International conference

    International conference on reactive plasmas and Symposium on Plasma processing (ICRP 6/SPP 23), (Sendai, Japan, January 24-27, 2006), P-2A-38, p. 467. 

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    Event date: 2006.1

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  313. Structural damage of diamond by oxygen ion beam exposure International conference

    International conference on reactive plasmas and Symposium on Plasma processing (ICRP 6/SPP 23), (Sendai, Japan, January 24-27, 2006), G-3A-5, p. 91. 

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    Event date: 2006.1

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  314. Vacuum-ultraviolet photon irradiation effects in fluorocarbon plasmas on SiO2 etching surface reactions using In vacuo electron-spin-resonance

    AVS 52nd International Symposium American Vacuum Society (AVS), (Boston, MA, U. S. A., October 31-November 4, 2005), PS-TuA6, p.97. 

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    Event date: 2005.10

    Language:English   Presentation type:Oral presentation (general)  

  315. Low temperature dry cleaning technology using formic acid in Cu/Low-k multilecel interconnects for 45 nm node and beyond International conference

    Advanced Metallization Conference (AMC) 2005, (Colorado, U. S. A., September 27-29, 2005), pp. 569-574. 

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    Event date: 2005.9

    Language:English   Presentation type:Oral presentation (general)  

  316. Efficient reduction of standby leakage current in LSIs for use in mobile devices International conference

    Ext. Abst. the 2005 International conference on Solid State Devices and Materials (SSDM), (Kobe, September 13-15, 2005), pp. 878-879. 

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    Event date: 2005.9

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  317. Defect creation in diamond by hydrogen plasma treatment at room temperature International conference

    23rd International Conference on Defects in Semiconductors (ICDS-23), (Hyogo, Japan, July 24 -29, 2005), Th-P17, p. 290. 

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    Event date: 2005.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  318. Structural change in diamond by hydrogen plasma treatment at room temperature International conference

    10th International Conference New Diamond Science and Technology (ICNDST-10), (Tsukuba, Japan, May 11-14, 2005), P5-3, p. 21. 

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    Event date: 2005.5

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  319. Using In-vacuo Electron-spin-resonance and infrared spectroscopy technique in the analysis of surface reactions of Low-k films during/after plasma processes

    AVS 51th International Symposium American Vacuum Society (AVS), (Anaheim, CA, U. S. A., November 14-17, 2004), PS1-MoM6, p. 62. 

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    Event date: 2004.11

    Language:English   Presentation type:Oral presentation (general)  

  320. Dangling bond creation and annihilation during plasma processes studied by in-situ ESR technique International conference

    AVS 51st International Symposium American Vacuum Society (AVS), (Anaheim, CA, U. S. A., November 14-17, 2004), PS-ThA4, p. 140. 

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    Event date: 2004.11

    Language:English   Presentation type:Oral presentation (invited, special)  

  321. Cleaning of copper surface using vapor-phase organic acids International conference

    2nd EU-Japan Joint Symposium on Plasma processing, (February 17-19, 2004), P-06, p. 322. 

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    Event date: 2004.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  322. Incident angular dependence of SiO2 and Si3N4 etching with mass-analyzed CFx+ ion beam irradiation International conference

    2nd EU-Japan Joint Symposium on Plasma processing, (February 17-19, 2004), P-03, p. 295. 

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    Event date: 2004.2

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  323. Incident angular dependence of SiO2 and Si3N4 etching with mass-analyzed CFx+ ion beam irradiation International conference

    4th International Symposium on Dry Process, (Hongoh, Tokyo, November 14-15, 2003), 7-3, pp. 271-276. 

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    Event date: 2003.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  324. Study of SiO2 plasma etching with off-normal mass-analyzed CFx+ ion beam irradiation International conference

    AVS 50th International Symposium American Vacuum Society (AVS), (Baltimore, MD, U. S. A., November 2-7, 2003), PS1-WeA9, p. 171. 

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    Event date: 2003.11

    Language:English   Presentation type:Oral presentation (general)  

  325. Mechanisms of vapor cleaning of copper surface using organic acids International conference

    204th Meeting of the Electrochemical Society (ECS), (Orlando, Florida, U. S. A., October 12-17, 2003), G1-613, pp. 259-263. 

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    Event date: 2003.10

    Language:English   Presentation type:Oral presentation (general)  

  326. Study of fluorocarbon plasma etching and film deposition with mass separated CFx+ ion beam irradiation International conference

    16th International Symposium on Plasma Chemistry (ISPC16), (Taorumina, Italy, June 22-27, 2003), p. 307. 

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    Event date: 2003.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Country:Japan  

  327. Cleaning of copper surface using vapor-phase organic acids International conference

    203rd Meeting of the Electrochemical Society (ECS), (Paris, France, April 27 – May 2, 2003), F2-425, pp. 320-323. 

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    Event date: 2003.4

    Language:English   Presentation type:Oral presentation (general)  

  328. Vapor treatment of copper surface using organic acids International conference

    2003 Spring meeting of the Material Research Society (MRS), (San Francisco, April 21–25, 2003), E3-28, pp. 459-464. 

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    Event date: 2003.4

    Language:English   Presentation type:Oral presentation (general)  

  329. Study of selective etching of SiO2-to-Si3N4 and a-C:F film deposition with mass-analyzed CFx+ ion beam irradiation International conference

    4th International Conference on Microelectronics and Interfaces (ICMI'03), (Santa Clara, CA, March 3-6, 2003), pp. . 

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    Event date: 2003.3

    Language:English   Presentation type:Oral presentation (general)  

  330. Measurements of Desorbed Products and Etching Yield by CFx+(x=1,2,3) Ion Irradiation International conference

    AVS 49th International Symposium American Vacuum Society (AVS), (Denver Colorado, November 3-8, 2002), PS-FrM2, p.137. 

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    Event date: 2002.11

    Language:English   Presentation type:Oral presentation (general)  

  331. Using Real-time Infrared Spectroscopy and In-vacuo Electron-Spin-Resonance Technique in the Analysis of Surface Reactions during Etching of Organic Low-k Film by a Plasma of N2 and H2 International conference

    2nd International Symposium on Dry Process, (Hongoh, Tokyo, October 11-12, 2002), I-7, pp. 39-44. 

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    Event date: 2002.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  332. Decomposition Mechanism of c-C4F8 in Plasma Assisted Catalytic Technology (PACT) International conference

    2nd International Symposium on Dry Process, (Hongoh, Tokyo, October 11-12, 2002). VI-22, pp. 243-248. 

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    Event date: 2002.10

    Language:English   Presentation type:Oral presentation (general)  

  333. Study of SiO2 plasma etching and fluorocarbon film deposition with mass separated CFx+ ion beam irradiation International conference

    2nd International Symposium on Dry Process, (Hongoh, Tokyo, October 11-12, 2002), VII-3, pp. 269-274. 

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    Event date: 2002.10

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  334. Dangling Bond Observation during Plasma Etching Processes Using In-vacuo Electron-Spin-Resonance Technique International conference

    16th European Conference on Atomic and Molecular Physics of Ionized Gases (ESCAMPIG) and 5th International Conference on Reactive Plasmas (ICRP), (Grenoble, France, July 15-18, 2002), P1-65, pp.169-170. 

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    Event date: 2002.7

    Language:English   Presentation type:Oral presentation (general)  

  335. Measurements of desorbed products and etching yield by CFx+ (x=1,2,3) ion irradiation on SiO2 International conference

    16th European Conference on Atomic and Molecular Physics of Ionized Gases (ESCAMPIG) and 5th International Conference on Reactive Plasmas (ICRP), (Grenoble, France, July 15-18, 2002), P1-80, pp. 199-200. 

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    Event date: 2002.7

    Language:English   Presentation type:Oral presentation (general)  

  336. Measurements of SiO2 Etch Yields under F+ and CFx+ Ion Irradiation International conference

    3rd International Conference on Microelectronics and Interfaces (ICMI'02), (Santa Clara, CA, February 11-15, 2002), pp. . 

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    Event date: 2002.2

    Language:English   Presentation type:Oral presentation (general)  

  337. Dangling Bond Observation during Fluorocarbon Plasma Etching Processes Using In-vacuo Electron-Spin-Resonance Technique International conference

    1st International Symposium on Dry Process, (Waseda, Tokyo, November 20-21, 2001), VII-6, pp. 301-306. 

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    Event date: 2001.11

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  338. In-vacuo Electron-Spin-Resonance Study on Fluorocarbon Films for SiO2 Plasma Etching International conference

    AVS 48th International Symposium American Vacuum Society (AVS), (San Francisco, CA, October 28-November 2, 2001), PS1-MoA2, p.64. 

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    Event date: 2001.10

    Language:English   Presentation type:Oral presentation (general)  

  339. Early-stage modification of Silicon dioxide surface during fluorocarbon plasma etching International conference

    25th Intern. Conf. on Phenomena in Ionized Gases (ICPIG), (Nagoya, July 17-22, 2001), 18a35, p. 89. 

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    Event date: 2001.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  340. Time-Resolved Planer Laser-Induced Fluorescence of Fluorocarbon Radicals in Oxide Etch Process Plasma International conference

    25th International Conference on Phenomena in Ionized Gases (ICPIG), (Nagoya, July 17-22, 2001), 18a36, p. 91. 

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    Event date: 2001.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  341. Electron-Spin-Resonance Investigation on Solid Surfaces Irradiated by Fluorocarbon Plasma International conference

    25th International Conference on Phenomena in Ionized Gases (ICPIG), (Nagoya, July 17-22, 2001), 18a34, p. 87. 

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    Event date: 2001.7

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  342. Early-stage modification of silicon oxide surface in fluorocarbon plasma for selective etching over silicon International conference

    47th International Symposium American Vacuum Society (AVS), (Boston, MA, October 2-6, 2000), PS-MoM4, p. 6. 

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    Event date: 2000.10

    Language:English   Presentation type:Oral presentation (general)  

  343. An in-situ time-resolved infrared spectroscopic study of silicon dioxide surface during selective etching over silicon using fluorocarbon plasma International conference

    Microprocess and Nanotechnology Conference (MNC), (Tokyo, July 11-13, 2000), 13B-9-3, pp. 270-271. 

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    Event date: 2000.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  344. Early Stage of Native Oxide Growth on an Atomically Flat Hydrogen Terminated Si(111) Surface International conference

    Proc. 3rd Intern. Symp. Ultra Clean Processing of Silicon Surface (UCPSS 96), edited by M. Heyns, (Acco Leuven/Amersfoort, 1996), pp. 273-278. 

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    Event date: 1996

    Language:English   Presentation type:Oral presentation (general)  

  345. Thickness-Deconvolved Structural Properties of Thermally Grown Silicon Dioxide Film International conference

    26th IEEE Semiconductor Interface Specialist Conf. (SISC 95), (Charleston, South Carolina, December 7-9, 1995), P1.2. 

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    Event date: 1995.12

    Language:English   Presentation type:Poster presentation  

  346. Thickness-Deconvolved Structural Properties of Thermally Grown Silicon Dioxide Film International conference

    Ext. Abst. of the 1995 Intern. Conf. on Solid State Devices and Mater. (SSDM), (Osaka, August 21-24, 1995), PA-1-8, pp. 500-502. 

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    Event date: 1995.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  347. In-situ Observation of Oxygen Exposed Hydrogen Terminated Silicon Surfaces International conference

    Ext. Abst. of the 1995 Intern. Conf. on Solid State Devices and Mater. (SSDM), (Osaka, August 21-24, 1995), S-1-1-2, pp.13-15. 

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    Event date: 1995.8

    Language:English   Presentation type:Poster presentation  

    Country:Japan  

  348. Study on Reaction of Fluorine Radicals with Si(111) Surface Employing an In-situ Combinated of ATR and XPS International conference

    8th Intern. Micro Process Conf., (Sendai, July 17-20, 1995), pp. 170-171. 

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    Event date: 1995.7

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  349. Contribution of Si/SiO2 Interface Roughness in the Observation of Chemical Structure International conference

    Ext. Abst. of the 1994 Intern. Conf. on Solid State Devices and Mater.(SSDM), (Yokohama, August 23-26, 1994), C-8-5, pp. 850-852. 

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    Event date: 1994.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  350. Effects of Dissolved Oxygen in HF solution on Silicon Surface Morphology International conference

    Ext. Abst. of the 1994 Intern. Conf. on Solid State Devices and Mater. (SSDM), (Yokohama, August 23-26, 1994), pp. 437-439. 

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    Event date: 1994.8

    Language:English   Presentation type:Oral presentation (general)  

    Country:Japan  

  351. New Analytical Method of SiO2 Structure by Infrared Reflection Absorption Spectorscopy (IR-RAS) International conference

    1993 Fall Meeting of the Material Research Society (MRS), Proc. 318 (Boston, November 28-December 5, 1993), pp. 425-430. 

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    Event date: 1993.11

    Language:English   Presentation type:Oral presentation (general)  

  352. FT-IR-RAS Analysis of Native Oxide Grown on Si(111) International conference

    S. Fujimura, H. Ogawa, K. Ishikawa, C. Inomata, and H. Mori

    Ext. Abst. of the 1993 Intern. Conf. on Solid State Devices and Mater. (SSDM), (Makuhari, August 29-September 1, 1993), pp.618-620. 

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    Event date: 1993.8

    Language:English   Presentation type:Oral presentation (general)  

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KAKENHI (Grants-in-Aid for Scientific Research) 10

  1. Plasma-driven Sciences: Dynamics and transports of biochemically reactive species

    Grant number:24H02254  2024.4 - 2029.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Transformative Research Areas (A)

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    Authorship:Principal investigator 

    Grant amount:\122720000 ( Direct Cost: \94400000 、 Indirect Cost:\28320000 )

  2. Comprehensive study of plasma-driven molecular dynamics in seeds

    Grant number:24H02246  2024.4 - 2029.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Transformative Research Areas (A)

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    Authorship:Coinvestigator(s) 

  3. Innovation in atomically controlled engineering of plasma etching technology with builiding a collaborative environment for theory, computation, and measurement

    Grant number:21H01073  2021.4 - 2024.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

    Sekine Makoto

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    Authorship:Coinvestigator(s) 

    In this study, we aim to establish a hierarchical analysis scheme by dividing the reaction process into three stages: (1) reaction in the gas phase, (2) active species transport, and (3) surface reaction. For each of these reactions, we have developed a theory in principle. We have conducted simulation prediction using computational science, and demonstrated verification experiments by subdividing the reaction into elementary processes. Also we have performed etching processes that can handle mass production. We have conducted a kinetic analysis of the progress of the interaction between the plasma and the surface, in order to build a research foundation integrating theory, computation, and experiment. We have systematized "atomic scale engineering" of plasma-surface interactions and pioneered fundamental technologies that will contribute to the creation of the next generation of innovative electronic information devices.

  4. Spatiotemporal analysis of aqueous reaction field of plasma-generated free radicals

    Grant number:21H04451  2021.4 - 2024.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

    Ishikawa Kenji

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    Authorship:Principal investigator 

    Grant amount:\43030000 ( Direct Cost: \33100000 、 Indirect Cost:\9930000 )

    This study focused on answering the question, "How do sequential chain reactions induced by radicals produced in plasma proceed?" We succeeded in detecting and analyzing multiple "plasma-induced active species" generated by sequential chain reactions initiated by radicals produced by plasma in solution. Reactions of liquid-phase radicals are broadly classified into three categories: synthesis, modification, and decomposition of organic molecules, including I) substitution of functional groups, II) addition of C3 (compounds with three carbon atoms) to C4 and C5, and III) decomposition to C2 and C1. The reactions of these liquid-phase radicals have been elucidated by the best of measurement science.

  5. Mechanism elucidation of spatio-temporal structure formation of sheath fluctuation using optically trapped fine particles in plasmas

    Grant number:20H00142  2020.4 - 2024.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

    Shiratani Masaharu

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    As integration circuit structures continue to advance in further stacking and complexity, the demand for plasma etching and deposition technologies in high aspect ratio structures has increased. To address these challenges, understanding the spatial distribution of electric fields at the micro- and nanometer scales during plasma processes and controlling their fluctuation components have become important factors. In this study, we conducted research on the following topics: (1) Development of a method for measuring electric field intensity with high spatial resolution in the micrometer range using particles trapped by optical tweezers as probes, (2) Development of a novel experimental derivation method for the charge of particles to improve measurement accuracy, and (3) Elucidation of the behavior of incident ions using high-aspect-ratio structures.

  6. Plasma Biochemistry and Metabolic Profiles of Cells Interacted with Non-thermal Plasmas

    Grant number:17H02805  2017.4 - 2020.3

    Ishikawa Kenji

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    Authorship:Principal investigator 

    Grant amount:\18460000 ( Direct Cost: \14200000 、 Indirect Cost:\4260000 )

    The alternation of intracellular metabolites cultured in plasma-activated solutions was observed in brain tumor cells (U251SPs). Bioenergetics and biomass production were taken place through catabolism from glucose uptake in the cell culture medium; (i) bioenergetics were deficient in the plasma-activated culture medium due to reduced activity of glycolytic enzymes due to oxidative stress; (ii) lactate-containing solutions enhanced anabolism from lactate uptake while maintaining a reduced intracellular state; and (iii) plasma-activated organics acted as inhibitors of glutamine assimilation and lipid metabolism in the plasma-activated lactate solution (PAL). In particular, we found that intracellular metabolism was altered by plasma-activated organic matter in PAL, leading to plasma-induced cell death.

  7. Health risk assessment and development of remediation systems for elemental contamination of drinking water in Asian countries

    Grant number:15H02588  2015.4 - 2019.3

    Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

    Kato Masashi

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    Authorship:Coinvestigator(s) 

    Contamination of toxic elements in well drinking water has caused various element-originating diseases in tens of millions of people in Asian countries. In this study, the comprehensive study was conducted to quickly resolve the international environmental problems related to contamination of toxic elements in well drinking water. First, the present situation of elemental contamination of well drinking water was investigated in the areas including Afghanistan. Then, harmful elements that may induce carcinogenesis and/or disorders of sensory organs (melanosis, hearing loss, etc.) were detected by our multidisciplinary health risk assessment system consisted of experimental and epidemiological analyses. Finally, we developed a new remediation system that can remove harmful elements from well drinking water based on our results of health risk assessment.

  8. Construction of carbon nanowall sheet edge electronics and differentiation induction control of single cell

    Grant number:15H02032  2015.4 - 2018.3

    Hori Masaru

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    Authorship:Collaborating Investigator(s) (not designated on Grant-in-Aid) 

    In order to cultivate biotechnology devices and plasma bioelectronics that can control adhesion, morphology and differentiation induction of cells by systematic elucidation interaction between electronic properties developed from nanosheet-edges in carbon nanowall (CNW) and cells, the effects of superimposed electrical stimulation on the CNW scaffold on the proliferation / differentiation (ossification) of osteoblasts were elucidated. Proliferation promotion and suppression of ossification were specifically confirmed only when the electrical stimulation at the frequency of 10 Hz was superimposed. Furthermore, the dependence on wall density and the formation of cell clumps without ossification were also found. These suggest changes in cell proliferation and differentiation due to the synergy between the sheet edge on the CNW surface and electrical stimulation, and establishment of new cell control technology in various regenerative medicine is expected.

  9. プラズマで生成された生体内フリーラジカルの実時間計測とプラズマ滅菌処理の研究

    2014.4 - 2017.3

    基盤研究(B)  基盤研究(B)

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    Authorship:Principal investigator 

  10. 実時間その場電子スピン共鳴分析によるプラズマの生体に及ぼす作用に関する研究

    2012.4 - 2014.3

    挑戦的萌芽 

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    Authorship:Principal investigator 

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Industrial property rights 8

  1. シリコン酸化膜の評価方法及び装置並びに半導体装置の製造方法及び装置

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    Date applied:2005.3

    Patent/Registration no:3844770  Date registered:2006.8 

    Country of applicant:Domestic  

  2. 半導体装置の製造方法

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    Date applied:2004.9

    Patent/Registration no:4283189  Date registered:2009.3 

    Country of applicant:Domestic  

  3. シリコン酸化膜の評価方法及び半導体装置の製造方法

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    Date applied:2002.12

    Patent/Registration no:3816440  Date registered:2006.6 

    Country of applicant:Domestic  

  4. 半導体装置の製造方法

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    Date applied:1999.3

    Patent/Registration no:3326718  Date registered:2002.7 

    Country of applicant:Domestic  

  5. 半導体装置の製造方法

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    Date applied:1999.2

    Patent/Registration no:3326717  Date registered:2002.7 

    Country of applicant:Domestic  

  6. シリコン酸化膜の評価方法及び半導体装置の製造方法

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    Date applied:1995.3

    Patent/Registration no:3670336  Date registered:2005.4 

    Country of applicant:Domestic  

  7. Silicon oxide film evaluation method

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    Date applied:1994.3

    Patent/Registration no:US 5,595,916  Date registered:1997.1 

    Country of applicant:Foreign country  

  8. シリコン酸化膜の評価方法及び装置、並びに半導体装置の製造方法及び装置

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    Date applied:1994.3

    Patent/Registration no:3452629  Date registered:2003.7 

    Country of applicant:Domestic  

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Teaching Experience (On-campus) 8

  1. Electromagnetism

    2023

  2. Dielectric engineering

    2023

  3. ナノプロセス工学特論

    2020

  4. Nanoprocessing technology

    2018

  5. ナノプロセス工学特論

    2017

  6. ナノプロセス工学特論

    2016

  7. ナノプロセス工学特論

    2014

  8. ナノプロセス工学特論

    2012

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