Papers - HONDA, Yoshio
-
Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping
Kumabe, T; Yoshikawa, A; Kawasaki, S; Kushimoto, M; Honda, Y; Arai, M; Suda, J; Amano, H
IEEE TRANSACTIONS ON ELECTRON DEVICES 2024.2
-
Hamasaki, K; Ohnishi, K; Nitta, S; Fujimoto, N; Watanabe, H; Honda, Y; Amano, H
JOURNAL OF CRYSTAL GROWTH Vol. 628 2024.2
-
Watanabe, H; Nitta, S; Ando, Y; Ohnishi, K; Honda, Y; Amano, H
JOURNAL OF CRYSTAL GROWTH Vol. 628 2024.2
-
Ito, S; Sato, S; Bockowski, M; Deki, M; Watanabe, H; Nitta, S; Honda, Y; Amano, H; Yoshida, K; Minagawa, H; Hagura, N
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS Vol. 547 2024.2
-
Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering
Kobayashi, A; Honda, Y; Maeda, T; Okuda, T; Ueno, K; Fujioka, H
APPLIED PHYSICS EXPRESS Vol. 17 ( 1 ) 2024.1
-
Temperature Dependence of α-Particle Detection Performance of GaN PIN Diode Detector
Nakagawa, H; Hayashi, K; Miyazawa, A; Honda, Y; Amano, H; Aoki, T; Nakano, T
SENSORS AND MATERIALS Vol. 36 ( 1 ) page： 169 - 176 2024
-
15 GHz GaN Hi-Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W
Kawasaki, S; Kumabe, T; Deki, M; Watanabe, H; Tanaka, A; Honda, Y; Arai, M; Amano, H
IEEE TRANSACTIONS ON ELECTRON DEVICES 2023.12
-
Anisotropic hole transport along [0001] and [1120] direction in p-doped (1010) GaN
Lin, YY; Wang, J; Pristovsek, M; Honda, Y; Amano, H
JOURNAL OF APPLIED PHYSICS Vol. 134 ( 23 ) 2023.12
-
Kumabe, T; Kawasaki, S; Watanabe, H; Honda, Y; Amano, H
APPLIED PHYSICS LETTERS Vol. 123 ( 25 ) 2023.12
-
Investigation of Electrical Properties of N-Polar AlGaN/AlN Heterostructure Field-Effect Transistors
Inahara, D; Matsuda, S; Matsumura, W; Okuno, R; Hanasaku, K; Kowaki, T; Miyamoto, M; Yao, YZ; Ishikawa, Y; Tanaka, A; Honda, Y; Nitta, S; Amano, H; Kurai, S; Okada, N; Yamada, Y
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 220 ( 16 ) 2023.8
-
Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz
Kawasaki, S; Kumabe, T; Ando, Y; Deki, M; Watanabe, H; Tanaka, A; Honda, Y; Arai, M; Amano, H
IEEE ELECTRON DEVICE LETTERS Vol. 44 ( 8 ) page： 1328 - 1331 2023.8
-
Reverse Leakage Mechanism of Dislocation-Free GaN Vertical p-n Diodes
Kwon, W; Kawasaki, S; Watanabe, H; Tanaka, A; Honda, Y; Ikeda, H; Iso, K; Amano, H
IEEE ELECTRON DEVICE LETTERS Vol. 44 ( 7 ) page： 1172 - 1175 2023.7
-
Hole mobility limiting factors in dopant-free p-type distributed polarization-doped AlGaN
Kumabe, T; Kawasaki, S; Watanabe, H; Honda, Y; Amano, H
APPLIED PHYSICS LETTERS Vol. 122 ( 25 ) 2023.6
-
Stress relaxation of AlGaN on nonpolar m-plane GaN substrate
Lin, YY; Sena, H; Frentrup, M; Pristovsek, M; Honda, Y; Amano, H
JOURNAL OF APPLIED PHYSICS Vol. 133 ( 22 ) 2023.6
-
Lu, S; Deki, M; Kumabe, T; Wang, J; Ohnishi, K; Watanabe, H; Nitta, S; Honda, Y; Amano, H
APPLIED PHYSICS LETTERS Vol. 122 ( 14 ) 2023.4
-
Schimmel, S; Tomida, D; Ishiguro, T; Honda, Y; Chichibu, SE; Amano, H
MATERIALS Vol. 16 ( 5 ) 2023.3
-
A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes
Nagata, K; Matsubara, T; Saito, Y; Kataoka, K; Narita, T; Horibuchi, K; Kushimoto, M; Tomai, S; Katsumata, S; Honda, Y; Takeuchi, T; Amano, H
CRYSTALS Vol. 13 ( 3 ) 2023.3
-
Red emission from InGaN active layer grown on nanoscale InGaN pseudosubstrates
Cai, WT; Wang, J; Park, JH; Furusawa, Y; Cheong, HJ; Nitta, S; Honda, Y; Pristovsek, M; Amano, H
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 62 ( 2 ) 2023.2
-
INOUE Yusuke, NISHITANI Tomohiro, HONDA Anna, SATO Daiki, SHIKANO Haruka, KOIZUMI Atsushi, HONDA Yoshio, ICHIHARA Daisuke, SASOH Akihiro
TRANSACTIONS OF THE JAPAN SOCIETY FOR AERONAUTICAL AND SPACE SCIENCES Vol. 66 ( 1 ) page： 10 - 13 2023
-
Sato, D; Koizumi, A; Shikano, H; Noda, S; Otsuka, Y; Yasufuku, D; Mori, K; Iijima, H; Nishitani, T; Honda, Y; Amano, H
METROLOGY, INSPECTION, AND PROCESS CONTROL XXXVII Vol. 12496 2023