論文 - 天野 浩
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Influence of depletion fields on photoluminescence of n-doped InGaN/GaN multiple quantum well structures 査読有り
Monemar B, Paskov P P, Pozina G, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 192 巻 ( 0 ) 頁: 21-26 2002年
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Photoluminescence of excitons in InxGa1-xN/InyGa1-yN multiple quantum wells 査読有り
Monemar B, Paskov P P, Bergman J P, Pozina G, Paskova T, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 190 巻 ( 0 ) 頁: 161-166 2002年
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Optical study of AlGaN/GaN multiple quantum well structures grown on laterally overgrown GaN templates 査読有り
Pozina G, Bergman J P, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 190 巻 ( 0 ) 頁: 107-111 2002年
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High-quality and high-mobility AlInN/GaN superlattices grown by metalorganic vapor phase epitaxy 査読有り
Yamaguchi S, Iwamura Y, Kosaki M, Watanabe Y, Mochizuki S, Nakamura T, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
Institute of Physics Conference Series 170 巻 ( 0 ) 頁: 813-817 2002年
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Growth of high-quality GaN on metallic-ZrB2 by metalorganic vapor phase epitaxy 査読有り
Yukawa Y, Nakamura T, Kosaki M, Watanabe Y, Nitta S, Kamiyama S, Amano H, Akasaki I, Otani S, Kinoshita H
Institute of Physics Conference Series 170 巻 ( 0 ) 頁: 713-718 2002年
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Low-dislocation-density AlxGa1-xN single crystals grown on grooved substrates 査読有り
Sano Shigekazu, Detchprohm Theeradetch, Yano Masahiro, Nakamura Ryo, Mochizuki Shingo, Amano Hiroshi, Akasaki Isamu
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 93 巻 ( 0 ) 頁: 197-201 2002年
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In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology 査読有り
Nitta Shugo, Yukawa Yohei, Watanabe Yasuhiro, Kosaki Masayoshi, Iwaya Motoaki, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology 93 巻 ( 0 ) 頁: 139-142 2002年
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Optical characterization of III-nitrides 査読有り
Monemar B, Paskov P P, Paskova T, Bergman J P, Pozina G, Chen W M, Hai P N, Buyanova I A, Amano H, Akasaki I
Materials Science & Engineering B: Solid-State Materials for Advanced Technology 93 巻 ( 0 ) 頁: 112-122 2002年
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Simultaneous observation of luminescence and dissociation processes of Mg-H complex for Mg-doped GaN 査読有り
Koide Yasuo, Walker D E Jr, White B D, Brillson L J, Murakami Masanori, Kamiyama S, Amano H, Akasaki I
J. Apl. Phys. 92 巻 ( 0 ) 頁: 3657-3661 2002年
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Atomic arrangement at the AlN/ZrB2 interface 査読有り
Liu R, Bell A, Ponce F A, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. 81 巻 ( 0 ) 頁: 3182-3184 2002年
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Novel aspects of the growth of nitrides by MOVPE 査読有り
Amano H, Akasaki I
Journal of Physics: Condensed Matter 13 巻 ( 0 ) 頁: 6935-6944 2001年
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Luminescence of InGaN/GaN multiple quantum wells grown by mass-transport 査読有り
Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I
Materials Science Forum 353-356 巻 ( 0 ) 頁: 791-794 2001年
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Compensation mechanism in MOCVD and MBE grown GaN:Mg 査読有り
Alves H, Bohm M, Hofstaetter A, Amano H, Einfeldt S, Hommel D, Hofmann D M, Meyer B K
Physica B: Condensed Matter AmsterdamNetherlands 308-310 巻 ( 0 ) 頁: 38-41 2001年
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DX-like behavior of oxygen in GaN 査読有り
Wetzel C, Amano H, Akasaki I, Ager J W, Grzegory I, Meyer B K
Physica B: Condensed Matter AmsterdamNetherlands 302&303 巻 ( 0 ) 頁: 23-38 2001年
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Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport 査読有り
Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I
J. Crystal Growth 230 巻 ( 0 ) 頁: 473-476 2001年
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Near K-edge absorption spectra of III-V nitrides 査読有り
Fukui K, Hirai R, Yamamoto A, Hirayama H, Aoyagi Y, Yamaguchi S, Amano H, Akasaki I, Tanaka S
Physica Status Solidi B: Basic Research 228 巻 ( 0 ) 頁: 461-465 2001年
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Optical characterization of InGaN/GaN MQW structures without in phase separation 査読有り
Monemar B, Paskov P P, Pozina G, Paskova T, Bergman J P, Iwaya M, Nitta S, Amano H, Akasaki I
Physica Status Solidi B: Basic Research 228 巻 ( 0 ) 頁: 157-160 2001年
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Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure 査読有り
Kamiyama S, Iwaya M, Hayashi N, Takeuchi T, Amano H, Akasaki I, Watanabe S, Kaneko Y, Yamada N
J. Crystal Growth 223 巻 ( 0 ) 頁: 83-91 2001年
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Crystal growth of high-quality AlInN/GaN superlattices and of crack-free AlN on GaN: their possibility of high electron mobility transistor 査読有り
Yamaguchi S, Kosaki M, Watanabe Y, Mochizuki S, Nakamura T, Yukawa Y, Nitta S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 188 巻 ( 0 ) 頁: 895-898 2001年
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Growth mechanism and characterization of low-dislocation-density AlGaN single crystals grown on periodically grooved substrates 査読有り
Detchprohm T, Sano S, Mochizuki S, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 188 巻 ( 0 ) 頁: 799-802 2001年