Papers - AMANO, Hiroshi
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In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology Reviewed
Nitta Shugo, Yukawa Yohei, Watanabe Yasuhiro, Kosaki Masayoshi, Iwaya Motoaki, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology Vol. 93 ( 0 ) page： 139-142 2002
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Optical characterization of III-nitrides Reviewed
Monemar B, Paskov P P, Paskova T, Bergman J P, Pozina G, Chen W M, Hai P N, Buyanova I A, Amano H, Akasaki I
Materials Science & Engineering B: Solid-State Materials for Advanced Technology Vol. 93 ( 0 ) page： 112-122 2002
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Simultaneous observation of luminescence and dissociation processes of Mg-H complex for Mg-doped GaN Reviewed
Koide Yasuo, Walker D E Jr, White B D, Brillson L J, Murakami Masanori, Kamiyama S, Amano H, Akasaki I
J. Apl. Phys. Vol. 92 ( 0 ) page： 3657-3661 2002
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Atomic arrangement at the AlN/ZrB2 interface Reviewed
Liu R, Bell A, Ponce F A, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 81 ( 0 ) page： 3182-3184 2002
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Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi Shigeo, Iwamura Yasuo, Watanabe Yasuhiro, Kosaki Masayoshi, Yukawa Yohei, Nitta Shugo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Appl. Phys. Lett. Vol. 80 ( 0 ) page： 802-804 2002
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Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaN/sapphire substrates Reviewed
Riemann T, Christen J, Kaschner A, Laades A, Hoffmann A, Thomsen C, Iwaya M, Kamiyama S, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 80 ( 0 ) page： 3093-3095 2002
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Effect of n-type modulation doping on the photoluminescence of GaN/Al0 Reviewed
Haratizadeh H, Paskov P P, Pozina G, Holtz P O, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Appl. Phys. Lett. Vol. 80 ( 0 ) page： 1373-1375 2002
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Optical absorption in polarized Ga1-xInxN/GaN quantum wells Reviewed
Wetzel Christian, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers Vol. 41 ( 0 ) page： 11-14 2002
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Optical transitions in piezoelectrically polarized GaInN/GaN quantum wells Reviewed
Wetzel C, Nelson J, Kamiyama S, Amano H, Akasaki I
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Vol. 20 ( 0 ) page： 216-218 2002
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Critical issues in AlxGa1-xN growth Reviewed
Amano Hiroshi, Akasaki Isamu
Optical Materials Amsterdam Netherlands Vol. 19 ( 0 ) page： 219-222 2002
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Novel aspects of the growth of nitrides by MOVPE Reviewed
Amano H, Akasaki I
Journal of Physics: Condensed Matter Vol. 13 ( 0 ) page： 6935-6944 2001
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DX-like behavior of oxygen in GaN Reviewed
Wetzel C, Amano H, Akasaki I, Ager J W, Grzegory I, Meyer B K
Physica B: Condensed Matter AmsterdamNetherlands Vol. 302&303 ( 0 ) page： 23-38 2001
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Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport Reviewed
Pozina G, Bergman J P, Monemar B, Iwaya M, Nitta S, Amano H, Akasaki I
J. Crystal Growth Vol. 230 ( 0 ) page： 473-476 2001
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Near K-edge absorption spectra of III-V nitrides Reviewed
Fukui K, Hirai R, Yamamoto A, Hirayama H, Aoyagi Y, Yamaguchi S, Amano H, Akasaki I, Tanaka S
Physica Status Solidi B: Basic Research Vol. 228 ( 0 ) page： 461-465 2001
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Optical characterization of InGaN/GaN MQW structures without in phase separation Reviewed
Monemar B, Paskov P P, Pozina G, Paskova T, Bergman J P, Iwaya M, Nitta S, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 228 ( 0 ) page： 157-160 2001
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Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure Reviewed
Kamiyama S, Iwaya M, Hayashi N, Takeuchi T, Amano H, Akasaki I, Watanabe S, Kaneko Y, Yamada N
J. Crystal Growth Vol. 223 ( 0 ) page： 83-91 2001
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Crystal growth of high-quality AlInN/GaN superlattices and of crack-free AlN on GaN: their possibility of high electron mobility transistor Reviewed
Yamaguchi S, Kosaki M, Watanabe Y, Mochizuki S, Nakamura T, Yukawa Y, Nitta S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 188 ( 0 ) page： 895-898 2001
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Growth mechanism and characterization of low-dislocation-density AlGaN single crystals grown on periodically grooved substrates Reviewed
Detchprohm T, Sano S, Mochizuki S, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 188 ( 0 ) page： 799-802 2001
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Demonstration of flame detection in room light background by solar-blind AlGaN PIN photodiode Reviewed
Hirano A, Pernot C, Iwaya M, Detchprohm T, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 188 ( 0 ) page： 293-296 2001
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High-efficiency GaN/AlxGa1-xN multi-quantum-well light emitter grown on low-dislocation density AlxGa1-xN Reviewed
Iwaya M, Terao S, Sano T, Takanami S, Ukai T, Nakamura R, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 188 ( 0 ) page： 117-120 2001