Papers - AMANO, Hiroshi
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Relaxation of misfit-induced stress in nitride-based heterostructures Reviewed
Terao Shinji, Iwaya Motoaki, Sano Tomoaki, Nakamura Tetsuya, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 237-239 ( 0 ) page： 947-950 2002
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Characterization of local structures around In atoms in Ga1-xInxN layers by fluorescence EXAFS measurements Reviewed
Tabuchi M, Katou D, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I
J. Crystal Growth Vol. 237-239 ( 0 ) page： 1139-1142 2002
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Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited AlN buffer layers Reviewed
Tabuchi M, Kyouzu H, Takeda Y, Yamaguchi S, Amano H, Akasaki I
J. Crystal Growth Vol. 237-239 ( 0 ) page： 1133-1138 2002
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Electric fields in polarized GaInN/GaN heterostructures Reviewed
Wetzel C, Takeuchi T, Amano H, Akasaki I
Optoelectronic Properties of Semiconductors and Superlattices Vol. 14 ( 0 ) page： 219-258 2002
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Reduction of threading dislocation density in AlxGa1-xN grown on periodically grooved substrates Reviewed
Mochizuki Shingo, Detchprohm Theeradetch, Sano Shigekazu, Nakamura Tetsuya, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 237-239 ( 0 ) page： 1065-1069 2002
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Low-dislocation-density GaN and AlxGa1-xN (x? 013) grown on grooved substrates Reviewed
Sano Shigekazu, Detchprohm Theeradetch, Mochizuki Shingo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth Vol. 235 ( 0 ) page： 129-134 2002
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Migration of dislocations in strained GaN heteroepitaxial layers Reviewed
Sahonta S-L, Baines M Q, Cherns D, Amano H, Ponce F A
Physica Status Solidi B: Basic Research Vol. 234 ( 0 ) page： 952-955 2002
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Mg incorporation in AlGaN layers grown on grooved sapphire substrates Reviewed
Cherns D, Baines M Q, Wang Y Q, Liu R, Ponce F A, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 234 ( 0 ) page： 850-854 2002
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Phonon-assisted photoluminescence in InGaN/GaN multiple quantum wells Reviewed
Paskov P P, Holtz P O, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi B: Basic Research Vol. 234 ( 0 ) page： 755-758 2002
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Mass transport of AlxGa1-xN Reviewed
Nitta S, Yukawa Y, Watanabe Y, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 194 ( 0 ) page： 485-488 2002
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High-efficiency UV light-emitting diode Reviewed
Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 194 ( 0 ) page： 393-398 2002
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Effect of In-doping on the properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 192 ( 0 ) page： 453-455 2002
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Annihilation of threading dislocations in GaN/AlGaN Reviewed
Kuwano N, Tsuruda T, Adachi Y, Terao S, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 192 ( 0 ) page： 366-370 2002
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UV light-emitting diode fabricated on hetero-ELO-grown Al022Ga078N with low dislocation density Reviewed
Kamiyama S, Iwaya M, Takanami S, Terao S, Miyazaki A, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 192 ( 0 ) page： 296-300 2002
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Influence of depletion fields on photoluminescence of n-doped InGaN/GaN multiple quantum well structures Reviewed
Monemar B, Paskov P P, Pozina G, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 192 ( 0 ) page： 21-26 2002
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Photoluminescence of excitons in InxGa1-xN/InyGa1-yN multiple quantum wells Reviewed
Monemar B, Paskov P P, Bergman J P, Pozina G, Paskova T, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 190 ( 0 ) page： 161-166 2002
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Optical study of AlGaN/GaN multiple quantum well structures grown on laterally overgrown GaN templates Reviewed
Pozina G, Bergman J P, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research Vol. 190 ( 0 ) page： 107-111 2002
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High-quality and high-mobility AlInN/GaN superlattices grown by metalorganic vapor phase epitaxy Reviewed
Yamaguchi S, Iwamura Y, Kosaki M, Watanabe Y, Mochizuki S, Nakamura T, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
Institute of Physics Conference Series Vol. 170 ( 0 ) page： 813-817 2002
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Growth of high-quality GaN on metallic-ZrB2 by metalorganic vapor phase epitaxy Reviewed
Yukawa Y, Nakamura T, Kosaki M, Watanabe Y, Nitta S, Kamiyama S, Amano H, Akasaki I, Otani S, Kinoshita H
Institute of Physics Conference Series Vol. 170 ( 0 ) page： 713-718 2002
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Low-dislocation-density AlxGa1-xN single crystals grown on grooved substrates Reviewed
Sano Shigekazu, Detchprohm Theeradetch, Yano Masahiro, Nakamura Ryo, Mochizuki Shingo, Amano Hiroshi, Akasaki Isamu
Materials Science & EngineeringB: Solid-State Materials for Advanced Technology Vol. 93 ( 0 ) page： 197-201 2002