論文 - 天野 浩
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Violet and UV light-emitting diodes grown on ZrB2 substrate 査読有り
Kamiyama S, Takanami S, Tomida Y, Iida K, Kawashima T, Fukui S, Iwaya M, Kinoshita H, Matsuda T, Yasuda T, Otani S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 200 巻 ( 0 ) 頁: 67-70 2003年
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Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN 査読有り
Iwaya M, Takanami S, Miyazaki A, Kawashima T, Iida K, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 200 巻 ( 0 ) 頁: 110-113 2003年
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Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures: Role of depletion fields and polarization fields 査読有り
Monemar B, Paskov P P, Haratizadeh H, Holtz P O, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi A: Applied Research 195 巻 ( 0 ) 頁: 523-527 2003年
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Group III nitride-based UV light emitting devices 査読有り
Amano H, Takanami S, Iwaya M, Kamiyama S, Akasaki I
Physica Status Solidi A: Applied Research 195 巻 ( 0 ) 頁: 491-495 2003年
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Recombination dynamics of localized excitons in Al1-xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy 査読有り
Onuma T, Chichibu S F, Uchinuma Y, Sota T, Yamaguchi S, Kamiyama S, Amano H, Akasaki I
J. Apl. Phys. 94 巻 ( 0 ) 頁: 2449-2453 2003年
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Systematic analysis and control of low-temperature GaN buffer layers on sapphire substrates 査読有り
Sumiya M, Ogusu N, Yotsuda Y, Itoh M, Fuke S, Nakamura T, Mochizuki S, Sano T, Kamiyama S, Amano H, Akasaki I
J. Apl. Phys. 93 巻 ( 0 ) 頁: 1311-1319 2003年
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Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire 査読有り
Bell A, Liu R, Ponce F A, Amano H, Akasaki I, Cherns D
Appl. Phys. Lett. 82 巻 ( 0 ) 頁: 349-351 2003年
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High-power UV-light-emitting diode on sapphire 査読有り
Iwaya Motoaki, Takanami Shun, Miyazaki Atsushi, Watanabe Yasuhiro, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. Part : Regular PapersShort Notes & Review Papers 42 巻 ( 0 ) 頁: 400-403 2003年
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ZrB2 substrate for nitride semiconductors 査読有り
Kinoshita Hiroyuki, Otani Shigeki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Suda Jun, Matsunami Hiroyuki
Jpn. J. Appl. Phys.Part : Regular PapersShort Notes & Review Papers 42 巻 ( 0 ) 頁: 2260-2264 2003年
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Piezoelectric effect in group-III nitride-based heterostructures and quantum wells 査読有り
Takeuchi T, Wetzel C, Amano H, Akasaki I
Optoelectronic Properties of Semiconductors and Superlattices 16 巻 ( 0 ) 頁: 399-438 2003年
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Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy 査読有り
Tomida Yoshihito, Nitta Shugo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Otani Shigeki, Kinoshita Hiroyuki, Liu Rong, Bell Abigail, Ponce Fernando A
Applied Surface Science 216 巻 ( 0 ) 頁: 502-507 2003年
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Growth-induced defects in AlN/GaN superlattices with different periods 査読有り
Valcheva E, Paskova T, Radnoczi G Z, Hultman L, Monemar B, Amano H, Akasaki I
Physica B: Condensed Matter AmsterdamNetherlands 340-342 巻 ( 0 ) 頁: 1129-1132 2003年
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Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy 査読有り
Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
J. Crystal Growth 248 巻 ( 0 ) 頁: 503-506 2003年
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Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN 査読有り
Koide Yasuo, Walker D E Jr, White B D, Brillson L J, Itoh T, McCreery R L, Murakami Masanori, Kamiyama S, Amano H, Akasaki I
Physica Status Solidi B: Basic Research 240 巻 ( 0 ) 頁: 356-359 2003年
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Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures 査読有り
Monemar B, Haratizadeh H, Paskov P P, Pozina G, Holtz P O, Bergman J P, Kamiyama S, Iwaya M, Amano H, Akasaki I
Physica Status Solidi B: Basic Research 237 巻 ( 0 ) 頁: 353-364 2003年
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Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE 査読有り
Tsuda Michinobu, Watanabe Kenichi, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Liu Rong, Bell Abigail, Ponce Fernando A
Applied Surface Science 216 巻 ( 0 ) 頁: 585-589 2003年
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Structural analysis of Si-doped AlGaN/GaN multi-quantum wells 査読有り
Nakamura Tetsuya, Mochizuki Shingo, Terao Shinji, Sano Tomoaki, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 237-239 巻 ( 0 ) 頁: 1129-1132 2002年
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Photoluminescence and electroluminescence characterization of InxGa1-xN/InyGa1-yN multiple quantum well light emitting diodes 査読有り
Bergman J P, Pozina G, Monemar B, Kamiyama S, Iwaya M, Amano H, Akasaki I
Materials Science Forum 389-393 巻 ( 0 ) 頁: 1493-1496 2002年
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MOVPE growth and characterization of Al1-xInxN/GaN multiple layers 査読有り
Kosaki Masayoshi, Mochizuki Shingo, Nakamura Tetsuya, Watanabe Yasuhiro, Yukawa Yohei, Nitta Shugo, Yamaguchi Shigeo, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 237-239 巻 ( 0 ) 頁: 968-971 2002年
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Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN 査読有り
Iwaya Motoaki, Terao Shinji, Sano Tomoaki, Ukai Tsutomu, Nakamura Ryo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 237-239 巻 ( 0 ) 頁: 951-955 2002年