論文 - 天野 浩
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Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC 査読有り
Kamiyama S., Maeda T., Nakamura Y., Iwaya M., Amano H., Akasaki I., Kinoshita H., Furusho T., Yoshimoto M., Kimoto T., Suda J., Henry A., Ivanov I. G., Bergman J. P., Monemar B., Onuma T., Chichibu S. F.
J. Apl. Phys. 99 巻 ( 0 ) 頁： 093108/1-093108/4 2006年
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Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy 査読有り
Imura M., Nakano K., Kitano T., Fujimoto N., Narita G., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.
Appl. Phys. Lett. 89 巻 ( 0 ) 頁： 221901/1-221901/2 2006年
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Low-leakage-current enhancement-mode AlGaN/GaN heterostructure field-effect transistor using p-type gate contact 査読有り
Tsuyukuchi Norio, Nagamatsu Kentaro, Hirose Yoshikazu, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. 45 巻 ( 0 ) 頁： L319-L321 2006年
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High on/off ratio in enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors with P-type GaN gate contact 査読有り
Fujii Takahiro, Tsuyukuchi Norio, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Jpn. J. Appl. Phys. 45 巻 ( 0 ) 頁： L1048-L1050 2006年
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Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode 査読有り
Akasaki Isamu, Amano Hiroshi.
Jpn. J. Appl. Phys. 45 巻 ( 0 ) 頁： 9001-9010 2006年
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High-temperature metal-organic vapor phase epitaxial growth of AlN on sapphire by multi transition growth mode method varying V/III ratio 査読有り
Imura Masataka, Nakano Kiyotaka, Fujimoto Naoki, Okada Narihito, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Noro Tadashi, Takagi Takashi, Bandoh Akira.
Jpn. J. Appl. Phys. 45 巻 ( 0 ) 頁： 8639-8643 2006年
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Anisotropically biaxial strain in a-plane AlGaN on GaN grown on r-plane sapphire 査読有り
Tsuda Michinobu, Furukawa Hiroko, Honshio Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu.
Jpn. J. Appl. Phys. 45 巻 ( 0 ) 頁： 2509-2513 2006年
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Thermodynamic aspects of growth of AlGaN by high-temperature metal organic vapor phase epitaxy 査読有り
Okada Narihito, Fujimoto Naoki, Kitano Tsukasa, Narita Gou, Imura Masataka, Balakrishnan Krishnan, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Shimono Kenji, Noro Tadashi, Takagi Takashi, Bandoh Akira.
Jpn. J. Appl. Phys. 45 巻 ( 0 ) 頁： 2502-2504 2006年
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Effect of UV irradiation by UV LED on the apoptosis and necrosis of Jurkat cells 査読有り
Inada Shunko Albano, Amano Hiroshi, Akasaki Isamu, Morita Akinori, Kobayashi Keiko.
Meijo Daigaku Sogo Kenkyusho Sogo Gakujutsu Kenkyu Ronbunshu 5 巻 ( 0 ) 頁： 73-77 2006年
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Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors 査読有り
Chichibu Shigefusa F., Uedono Akira, Onuma Takeyoshi, Haskell Benjamin A., Chakraborty Arpan, Koyama Takahiro, Fini Paul T., Keller Stacia, DenBaars Steven P., Speck James S., Mishra Umesh K., Nakamura Shuji, Yamaguchi Shigeo, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Han Jung, Sota Takayuki. O
Nature Materials 5 巻 ( 0 ) 頁： 810-816 2006年
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Growth of high-quality AlN at high growth rate by high-temperature MOVPE 査読有り
Fujimoto N., Kitano T., Narita G., Okada N., Balakrishnan K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Shimono K., Noro T., Takagi T., Bandoh A.
Physica Status Solidi C 3 巻 ( 0 ) 頁： 1617-1619 2006年
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Light extraction process in moth-eye structure 査読有り
Kasugai H., Nagamatsu K., Miyake Y., Honshio A., Kawashima T., Iida K., Iwaya M., Kamiyama S., Amano H., Akasaki I., Kinoshita H., Shiomi H.
Physica Status Solidi C 3 巻 ( 0 ) 頁： 2165-2168 2006年
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Radiative recombination mechanism in highly modulation doped GaN/AlGaN multiple quantum wells 査読有り
Arnaudov B., Paskov P. P., Haratizadeh H., Holtz P. O., Monemar B., Kamiyama S., Iwaya M., Amano H., Akasaki I.
Physica Status Solidi C 3 巻 ( 0 ) 頁： 1888-1891 2006年
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Polarity and microstructure in InN thin layers grown by MOVPE 査読有り
Kuwano N., Nakahara Y., Amano H..
Physica Status Solidi C 3 巻 ( 0 ) 頁： 1523-1526 2006年
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Photoluminescence of GaN/AlN superlattices grown by MOCVD 査読有り
PP Paskov JP Bergman V Darakchieva T Paskova B Monemar M IwayaS Kamiyama H Amano and I Akasaki
Physica Status Solidi C: Current Topics in Solid State Physics 2 巻 ( 0 ) 頁： pp2345-2348 2005年
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Optical properties of InN related to surface plasmons 査読有り
Shubina T V, Leymarie J, Jmerik V N, Toropov A A, Vasson A, Amano H, Schaff W J, Monemar B, Ivanov S V
Physica Status Solidi A 202 巻 ( 0 ) 頁： 2633-2641 2005年
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CBED study of grain misorientations in AlGaN epilayers 査読有り
Sahonta S-L, Cherns D, Liu R, Ponce F A, Amano H, Akasaki I
Ultramicroscopy 103 巻 ( 0 ) 頁： 23-32 2005年
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Phonon mode behavior in strained wurtzite AlN/GaN superlattices 査読有り
Darakchieva V, Valcheva E, Paskov P P, Schubert M, Paskova T, Monemar B, Amano H, Akasaki I
Physical Review B 71 巻 ( 0 ) 頁： 115329/1-115329/9 2005年
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High-rate growth of films of dense, aligned double-walled carbon nanotubes using microwave plasma-enhanced chemical vapor deposition 査読有り
Hiramatsu Mineo, Nagao Hidetoshi, Taniguchi Masaki, Amano Hiroshi, Ando Yoshinori, Hori Masaru
Jpn. J. Appl. Phys. 44 巻 ( 0 ) 頁： L693-L695 2005年
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Control of p-type conduction in a-plane GaN grown on sapphire r-plane substrate 査読有り
Tsuchiya Yosuke, Okadome Yoshizane, Honshio Akira, Miyake Yasuto, Kawashima Takeshi, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
Jpn. J. Appl. Phys. 44 巻 ( 0 ) 頁： L1516-L1518 2005年