論文 - 天野 浩
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Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy 査読有り
Imura, Masataka, Nakajima, Kiyomi, Liao, Meiyong, Koide, Yasuo, Amano, Hiroshi
Journal of Crystal Growth 312 巻 ( 0 ) 頁: 1325-1328 2010年
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III族窒化物半導体へのp型ドーピングと結晶欠陥 招待有り 査読有り
天野 浩、岩谷 素顕、上山 智、赤﨑 勇
日本結晶成長学会誌 36 巻 ( 3 ) 頁: 200-204 2009年3月
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Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers 査読有り
Murotani, Hideaki, Kuronaka, Takahiro, Yamada, Yoichi, Taguchi, Tsunemasa, Okada, Narihito, Amano, Hiroshi
Journal of Applied Physics 105 巻 ( 0 ) 頁: 083533/1-083533/6 2009年
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Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures. Impact of built-in polarization fields 査読有り
Esmaeili, M., Gholami, M., Haratizadeh, H., Monemar, B., Holtz, P. O., Kamiyama, S., Amano, H., Akasaki, I.
Opto-Electronics Review 17 巻 ( 0 ) 頁: 293-299 2009年
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Growth of thick GaInN on grooved (1011) GaN/(1012) 4H-SiC 査読有り
Matsubara, Tetsuya, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth 311 巻 ( 0 ) 頁: 2926-2928 2009年
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High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer 査読有り
Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Ichikawa, Tomoki, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, et al
Physica Status Solidi A 206 巻 ( 0 ) 頁: 1199-1204 2009年
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InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy 査読有り
Kawai, Yohjiro, Ohsuka, Shinya, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth 311 巻 ( 0 ) 頁: 2929-2932 2009年
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Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN 査読有り
Fischer, Alec M., Wu, Zhihao, Sun, Kewei, Wei, Qiyuan, Huang, Yu, Senda, Ryota, Iida, Daisuke, Iwaya, Motoaki, Amano, Hiroshi, Ponce, Fernando A.
Applied Physics Express 2 巻 ( 0 ) 頁: 041002/1-041002/3 2009年
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Novel UV devices on high-quality AlGaN using grooved underlying layer 査読有り
Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, Yamashita, Yoji, et al
Journal of Crystal Growth 311 巻 ( 0 ) 頁: 2860-2863 2009年
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One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy 査読有り
Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth 311 巻 ( 0 ) 頁: 2887-2890 2009年
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Optimization of electrode configuration in large GaInN light-emitting diodes 査読有り
Ochiai, Wataru, Kawai, Ryosuke, Suzuki, Atsushi, Iwaya, Motoaki, Amano, Hiroshi, Kamiyama, Satoshi, Akasaki, Isamu
Physica Status Solidic 6 巻 ( 0 ) 頁: 1416-1419 2009年
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Relaxation and recovery processes of AlxGa1-xN grown on AlN underlying layer 査読有り
Asai, Toshiaki, Nagata, Kensuke, Mori, Toshiaki, Nagamatsu, Kentaro, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Journal of Crystal Growth 311 巻 ( 0 ) 頁: 2850-2852 2009年
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Strong emission from GaInN/GaN multiple quantum wells on high-crystalline-quality thick m-plane GaInN underlying layer on grooved GaN 査読有り
Senda, Ryota, Matsubara, Tetsuya, Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Applied Physics Express 2 巻 ( 0 ) 頁: 061004/1-061004/3 2009年
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Evidence for two Mg related acceptors in GaN 査読有り
Monemar B, Paskov P P, Pozina G, Hemmingsson C, Bergman J P, Kawashima T, Amano H, Akasaki I, Paskova T, Figge S, et al
Physical review letters 102 巻 ( 0 ) 頁: 235501/1-235501/4 2009年
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Activation energy of Mg in a-plane Ga1-xInxN (0 < x < 0.17) 査読有り
Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Physica Status Solidi B: 246 巻 ( 0 ) 頁: 1188-1190 2009年
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Crystal growth and p-type conductivity control of AlGaN for high-efficiency nitride-based UV emitters 査読有り
Mori, T., Nagamatsu, K., Nonaka, K., Takeda, K., Iwaya, M., Kamiyama, S., Amano, H., Akasaki, I.
Physica Status Solidi C 6 巻 ( 0 ) 頁: 2621-2625 2009年
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Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films 査読有り
Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yugova, T. G., Petrova, E. A., Amano, H., Kawashima, T., Scherbatchev, K. D., Bublik, V. T.
Journal of Applied Physics 105 巻 ( 0 ) 頁: 063708/1-063708/9 2009年
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Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth 査読有り
Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yakimov, E. B., Vergeles, P. S., Amano, H., Kawashima, T.
Journal of Crystal Growth 311 巻 ( 0 ) 頁: 2923-2925 2009年
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Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates 査読有り
Imura Masataka, Sugimura Hiroki, Okada Narihito, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu, Bandoh Akira
J. Crystal Growth 310 巻 ( 0 ) 頁: 2308-2313 2008年
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High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN 査読有り
Nagamatsu Kentaro, Okada Narihito, Sugimura Hiroki, Tsuzuki Hirotoshi, Mori Fumiaki, Iida Kazuyoshi, Bando Akira, Iwaya Motoaki, Kamiyama Satoshi, Amano Hiroshi, Akasaki Isamu
J. Crystal Growth 310 巻 ( 0 ) 頁: 2326-2329 2008年