論文 - 天野 浩
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Enhancement of two-dimensional electron gases in AlGaN-channel high-electron-mobility transistors with AlN barrier layers 査読有り
Hashimoto Shin; Akita Katsushi; Yamamoto Yoshiyuki, HIroshi Amano
Physica Status Solidi a 209 巻 頁: 501-504 2012年3月
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Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes 査読有り
Tetsuhiko Inazu, Shinya Fukahori, Cyril Pernot, Myung Hee Kim, Takehiko Fujita, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Masahito Yamaguchi, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki
Japanese Journal of Applied Physics 50 巻 頁: 122101 2011年12月
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Dependence of Resonance Energy Transfer on Exciton Dimensionality 査読有り
Jan Junis Rindermann, Galia Pozina, Bo Monemar, Lars Hultman, Hiroshi Amano, and Pavlos G. Lagoudakis
Physical Review Letters 107 巻 頁: 236805 2011年11月
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Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate 査読有り
Applied Physics Express 4 巻 頁: 101001 2011年10月
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AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates 査読有り
Myunghee Kim, Takehiko Fujita, Shinya Fukahori, Tetsuhiko Inazu, Cyril Pernot, Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Masahito Yamaguchi, Yoshio Honda, Hiroshi Amano, and Isamu Akasaki
Applie Physics Express 4 巻 頁: 092102 2011年9月
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Yoshinori Oshimura, Takayuki Sugiyama, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki and Hiroshi Amano
Japanese Journal of Applied Physics 50 巻 頁: 084102 2011年8月
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Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN 査読有り
S. Khromov, C. G. Hemmingsson, H. Amano, B. Monemar, L. Hultman, and G. Pozina
Pysical Review B84 巻 頁: 075324 2011年8月
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Reduction in threshold current density of 355 nm UV laser diodes 査読有り
Nagata, Kengo; Takeda, Kenichiro; Nonaka, Kentaro; Ichikawa, Tomoki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Yoshida, Harumasa; et al
Physica Status Solidi C 8 巻 ( 5 ) 頁: 1564-1568 2011年8月
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Achieving high-growth-rate in GaN homoepitaxy using high-density nitrogen radical source 査読有り
Kawai, Yohjiro; Chen, Shang; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Kondo, Hiroki; Hirmatsu, Mineo; Kano, Hiroyuki; Yamakawa, Koji; Den, Shoji; et al
Physica Status Solidi C 8 巻 ( 7-8 ) 頁: 2089-2091 2011年7月
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AlGaN/GaInN/GaN heterostructure field-effect transistor 査読有り
Ikki, Hiromichi; Isobe, Yasuhiro; Iida, Daisuke; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Bandoh, Akira; Udagawa, Takashi
Physica Status Solidi A 208 巻 ( 7 ) 頁: 1614-1616 2011年7月
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Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes 査読有り
Pernot, Cyril; Fukahori, Shinya; Inazu, Tetsuhiko; Fujita, Takehiko; Kim, Myunghee; Nagasawa, Yosuke; Hirano, Akira; Ippommatsu, Masamichi; Iwaya, Motoaki; Kamiyama, Satoshi, Amano Hiroshi; et al
Physica Status Solidi A: 208 巻 ( 7 ) 頁: 1594-1596 2011年7月
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Drain bias stress and memory effects in AlGaN/GaN heterostructure field-effect transistors with p-GaN gate 査読有り
Sugiyama, Takayuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi; Oshimura, Yoshinori; Iida, Daisuke; Iwaya, Motoaki; Akasaki, Isamu
Physica Status Solidi C 8 巻 ( 7-8 ) 頁: 2424-2426 2011年7月
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GaInN-based solar cells using GaInN/GaInN superlattices 査読有り
Fujii, Takahiro; Kuwahara, Yousuke; Iida, Daisuke; Fujiyama, Yasuhara; Morita, Yoshiki; Sugiyama, Toru; Isobe, Yasuhiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; et al
Physica Status Solidi C 8 巻 ( 7-8 ) 頁: 2463-2465 2011年7月
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Injection efficiency in AlGaN-based UV laser diodes 査読有り
Nagata, Kengo; Takeda, Kenichiro; Oshimura, Yoshinori; Takehara, Kosuke; Aoshima, Hiroki; Ito, Shun; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; et al
Physica Status Solidi C 8 巻 ( 7-8 ) 頁: 2384-2386 2011年7月
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Low leakage current in AlGaN/GaN HFETs with preflow of Mg source before growth of u-GaN buffer layer 査読有り
Oshimura, Yoshinori; Sugiyama, Takayuki; Takeda, Kenichiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi
Physica Status Solidi A 208 巻 ( 7 ) 頁: 1607-1610 2011年7月
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Optical properties of (1-101) InGaN/GaN MQW stripe laser structure on Si substrate 査読有り
Murase, Tasuku; Tanikawa, Tomoyuki; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi
Physica Status Solidi C 8 巻 ( 7-8 ) 頁: 2160-2162 2011年7月
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Optimization of initial MOVPE growth of non-polar m- and a-plane GAN on Na flux grown LPE-GaN substrates 査読有り
Isobe, Yasuhiro; Iida, Daisuke; Sakakibara, Tatsuyuki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi; Imade, Mamoru; Kitaoka, Yasuo; et al
Physica Status Solidi C 8 巻 ( 7-8 ) 頁: 2095-2097 2011年7月
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Selective MOVPE growth of InGaN/GaN MQW on microfacet GaN stripes 査読有り
Tanikawa, Tomoyuki; Murase, Tasuku; Honda, Yoshio; Yamaguchi, Masahito; Amano, Hiroshi
Physica Status Solidi C 8 巻 ( 7-8 ) 頁: 2038-2040 2011年7月
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Transparent electrode for UV light-emitting-diodes 査読有り
Takehara, Kosuke; Takeda, Kenichiro; Nagata, Kengo; Sakurai, Hisashi; Ito, Shun; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Amano, Hiroshi
Physica Status Solidi C 8 巻 ( 7-8 ) 頁: 2375-2377 2011年7月
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Nonpolar a-plane AlGaN/GaN heterostructure field-effect transistors grown on freestanding GaN substrate 査読有り
Isobe, Yasuhiro; Ikki, Hiromichi; Sakakibara, Tatsuyuki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu; Sugiyama, Takayuki; Amano, Hiroshi; Imade, Mamoru; et al
Applied Physics Express 4 巻 ( 6 ) 頁: 064102/1-064102/3 2011年6月