論文 - 天野 浩
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昇温脱離法によるInGaN表面上のCs層の解析
鹿島 将央, 佐藤 大樹, 小泉 淳, 西谷 智博, 本田 善央, 天野 浩, 飯島 北斗, 目黒 多加志
応用物理学会学術講演会講演予稿集 2018.1 巻 ( 0 ) 頁: 1670 - 1670 2018年3月
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Yang Xu, Nitta Shugo, Nagamatsu Kentaro, Bae Si-Young, Lee Ho-Jun, Liu Yuhuai, Pristovsek Markus, Honda Yoshio, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH 482 巻 ( 15 ) 頁: 1 - 8 2018年1月
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Electrical and Thermal Analysis of Vertical GaN-on-GaN PN Diodes
Yates, L; Pavlidis, G; Graham, S; Usami, S; Nagamatsu, K; Honda, Y; Amano, H
PROCEEDINGS OF THE 17TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM 2018) 頁: 831 - 837 2018年
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Theoretical Study of the Electronic Structure of Threading Edge Dislocations in GaN
Nakano Takashi, Araidai Masaaki, Shiraishi Kenji, Tanaka Atsushi, Honda Yoshio, Amano Hiroshi
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 8 86 巻 ( 12 ) 頁: 41 - 49 2018年
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DFT modeling of carbon incorporation in GaN(0001) and GaN(000(1)over-bar) metalorganic vapor phase epitaxy 査読有り
Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, and Hiroshi Amano
APPLIED PHYSICS LETTERS 111 巻 頁: 141602/1-5 2017年10月
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Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes
Liwen Sang, Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Atsushi Tanaka, Yujin Cho, Yoshitomo Harada, Toshihide Nabatame, Takashi Sekiguchi, Shigeyoshi Usami, Yoshio Honda, and Hiroshi Amano
APPLIED PHYSICS LETTERS 111 巻 頁: 122102/1-5 2017年9月
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Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations 査読有り
Tomoyuki Tanikawa, Kanako Shojiki, Ryuji Katayama, Shigeyuki Kuboya, Takashi Matsuoka, Yoshio Honda, and Hiroshi Amano
Applied Physics Express 10 巻 頁: 082101/1-4 2017年8月
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Low cost high voltage GaN polarization superjunction field effect transistors
Kawai H., Yagi S., Hirata S., Nakamura F., Saito T., Kamiyama Y., Yamamoto M., Amano H., Unni V., Narayanan E. M. S.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 214 巻 ( 8 ) 頁: 1600834/1-10 2017年8月
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Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE 査読有り
Atsushi Tanaka, Ousmane1 Barry, Kentaro Nagamatsu, Junya Matsushita, Manato Deki, Yuto Ando, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano
Phys. Status Solidi A 214 巻 ( 8 ) 頁: 1600829/1-5 2017年8月
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Effect of dislocations on the growth of p-type GaN and on the characteristics of p–n diodes 招待有り 査読有り
214 巻 ( 8 ) 頁: 1600837/1-5 2017年8月
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Selective-area growth of doped GaN nanorods by pulsed-mode MOCVD: Effect of Si and Mg dopants 査読有り
Si-Young Bae, Kaddour Lekhal, Ho-Jun Lee, Jung-Wook Min, Dong-Seon Lee, Yoshio Honda, and Hiroshi Amano
Phys. Status Solidi B 254 巻 ( 8 ) 頁: 1600722/1-7 2017年8月
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Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high-resolution gas monitoring system 査読有り
Kentaro Nagamatsu, Shugo Nitta, Zheng Ye, Hirofumi Nagao, Shinichi Miki, Yoshio Honda, and Hiroshi Amano
Phys. Status Solidi B 254 巻 ( 8 ) 頁: 1600737/1-4 2017年8月
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Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes
Usami Shigeyoshi, Miyagoshi Ryosuke, Tanaka Atsushi, Nagamatsu Kentaro, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 214 巻 ( 8 ) 2017年8月
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Role of threading dislocations in strain relaxation during GaInN growth monitored by real-time X-ray reflectivity 査読有り
Guangxu Ju, Masao Tabuchi, Yoshikazu Takeda, and Hiroshi Amano
Applied Physics Letters 110 巻 ( 26 ) 頁: 262105/1-5 2017年6月
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A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer 査読有り
Zheng Sun, Peifeng Song, Shugo Nitta, Yoshio Honda, Hiroshi Amano
Journal of Crystal Growth 468 巻 頁: 866-869 2017年6月
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Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer 査読有り
S.-Y.Bae, K. Lekhal, H.-J.Lee, T.Mitsunari, J.-W.Min, D.-S.Leed, M.Kushimoto, Y.Honda, H.Amano
Journal of Crystal Growth 468 巻 頁: 110-113 2017年6月
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Ho-Jun Lee, Si-Young Bae, Kaddour Lekhal, Akira Tamura, Takafumi Suzuki, Maki Kushimoto, Yoshio Honda, and Hiroshi Amano
Journal of Crystal Growth 468 巻 頁: 547-551 2017年6月
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468 巻 頁: 552-556 2017年6月
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Annealing effect on threading dislocations in a GaN grown on Si substrate 査読有り
468 巻 頁: 835-838 2017年6月
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A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer
Sun Zheng, Song Peifeng, Nitta Shugo, Honda Yoshio, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH 468 巻 頁: 866 - 869 2017年6月