*Japanese*
1983/03 , Nagoya University , Faculty of Engineering , Department of Electronics , Graduated
1985/03 , Nagoya University , Graduate School, Division of Engineering , Department of Electrical and Electronics Enginnering , Doctor Course Previous Term , Completed
1988/03 , Nagoya University , Graduate School, Division of Engineering , Department of Electrical and Electornics Engineering , Doctor Course Latter Term , Accomplished Credits for Doctoral Program
Research Associate, Nagoya University , 1988/04 - 1992/03
Assistant Professor, Meijo University , 1992/04 - 1998/03
Associate Professor , 1998/04 - 2002/03
Professor, Meijo University , 2002/04 - 2010/03
Nagoya University Graduate School of Engineering, Department of Electrical Engineering and Computer Science Professor , 2010/04 - 2015/10
Nagoya University Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Innovative Devices Section , Director , 2015/10 -
Doctor of Engineering , Nagoya University , Coursework , 1989/01
Light emitting diodelaser diode, High power and high frequency transistor, Solar cells, Nano structure, Crystal growth of compound semiconductors, Semiconductor device physics
Development of Watt class high power UV laser diodes , 2006/04 - 2011/03
Growth of dislocation-free GaN on Si substrates for long-life optical devices in opto-electronic integrated circuits , 2006/04 - 2010/03
Study of nanostructure fabrication technology for light-wave control , 2006/04 - 2009/03
High-Efficiency Nitride-based Power Devices in the Next Generation , 2006/04 - 2008/03
Defect reduction of super widegap semiconductor AlN by high temperature metalorganic vapor phase epitaxy and device applications , 2003/04 - 2006/03
MOCVD of Nitrides, Chapter 16 in Handbook of Crystal Growth, Second Edition , Elsevier , Hiroshi Amano , 2015
III-Nitride Based Light Emitting Diodes and Applications, Introduction Part A. Progress and Prospect of Growth of Wide-Band-Gap III-Nitrides , Springer , Hiroshi Amano , 2013
Bandgap Enginnering, Section two Current status of light source -LED- , Hiroshi Amano , 2011
Frontier of Ultra-High Efficiency Solar Cells and their Materials , Hiroshi Amano , 2011
Nitrides with Nonpolar Surfaces , Wiley-VCH Verlag GmbH & Co. KGaA , H. Amano, T. Kawashima, D. Iida, M. Imura, M. Iwaya, S. Kamiyama, I. Akasaki, Isamu , 2008
MOVPE growth and high-temperature annealing of (10(1)over-bar0) AlN layers on (10(1)over-bar0) sapphire , Dinh Duc V., Amano Hiroshi, Pristovsek Markus , JOURNAL OF CRYSTAL GROWTH , Vol.502 , 14-18 , (2018)
Full-duplex light communication with a monolithic multicomponent system , Wang Yongjin, Wang Xin, Zhu Bingcheng, Shi Zheng, Yuan Jialei, Gao Xumin, Liu Yuhuai, Sun Xiaojuan, Li Dabing, Amano Hiroshi , LIGHT-SCIENCE & APPLICATIONS , Vol.7 , (2018)
Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE , Avit Geoffrey, Zeghouane Mohammed, Andre Yamina, Castelluci Dominique, Gil Evelyne, Bae Si-Young, Amano Hiroshi, Trassoudaine Agnes , CRYSTENGCOMM , Vol.20 , No.40R , 6207-6213 , (2018)
Comparing high-purity c- and m-plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy , Nagamatsu Kentaro, Ando Yuto, Ye Zheng, Barry Ousmane, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi , JAPANESE JOURNAL OF APPLIED PHYSICS , Vol.57 , No.10R , (2018)
High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire , Dinh Duc V, Hu Nan, Honda Yoshio, Amano Hiroshi, Pristovsek Markus , JOURNAL OF CRYSTAL GROWTH , Vol.498 , 377-380 , (2018)
Present and Future Prospects of GaN-based Light Emitting Devices , LGIT Consultant , 2016 , Invited Speech/Special Lecture , Electron device/Electronic equipment
Lighting the Earth by LEDs , IDW'15 , 2015 , Invited Speech/Special Lecture , Electron device/Electronic equipment
Seeking Future Electronics for Better Human Life , Hiroshi Amano , ICAE2015 , 2015 , Key-note Speech , Electron device/Electronic equipment
Lighting the Earth by LEDs , Hiroshi Amano , Korea Maritime and Ocean University Special Lecture , 2015 , Public discourse, seminar, tutorial, course, lecture and others , Electronic materials/Electric materials
Challenges for energy savings and energy harvesting by new materials , Hiroshi Amano , Tsukuba GIANT High Level Forum , 2015 , Invited Speech/Special Lecture , Electron device/Electronic equipment
2015 Asia Game Changers , 2015/10 , Asia Society , UNITED STATES
APEX/JJAP Editorial Contribution Award , 2014/03/06 , Japan Society of Applied Physics , JAPAN
IOP Fellow , 2011/10/07 , Institute of Physics , UNITED KINGDOM
IOP Fellow , 2011/10 , Institute of Physics , UNITED KINGDOM
IEEE/LEOS Engineering Achievement Award , 1996/11 , IEEE/LEOS , Others
Foundations of Electromagnetics I （2011）
SPIE , Others
Institute of Physics , UNITED KINGDOM
OSA , Others
Japan Society for Applied Physics , JAPAN
Material Research Society Regular Member , 2010/01 - , UNITED STATES
International Workshop on Nitride Semiconductors2012 (IWN2012) , Executive committee chair , 2011/04/01 - 2012/10/25
ICMOVPE-XVI , International Advisory COmmittee , 2011/06/01 - 2012/05/25
4th International Symposium on Growth of III-Nitrides , Program Committee Chair , 2011/07/01 - 2012/07/19
ISPlasma2012 , 2012/02/29 - 2012/04/30
LEDIA , Conference Chair , 2012/04 -
I was born in Hamamatsu, Japan on September 11, 1960. I received my BE, ME and DE in 1983, 1985 and 1989, respectively, from Nagoya University. From 1988 to 1992, I was a research associate at Nagoya University. In 1992, I moved to Meijo University, where I was an assistant professor. From 1998 till 2002, I was an associate professor. In 2002, I became a professor. In 2010, I moved to the Graduate School of Engineering, Nagoya University, where I am currently a professor.
I joined Professor Isamu Akasaki's group in 1982 as an undergraduate student. Since then, I have been doing research on the growth, characterization and device applications of group III nitride semiconductors, which are well known as materials used in blue light-emitting diodes. In 1985, I developed low-temperature deposited buffer layers for the growth of group III nitride semiconductor films on a sapphire substrate, which led to the realization of group-III-nitride semiconductor based light-emitting diodes and laser diodes. In 1989, I succeeded in growing p-type GaN and fabricating a p-n-junction-type GaN-based UV/blue light-emitting diode for the first time in the world.
I have authored and co-authored more than 390 technical papers and have contributed to 17 books as well as to international conference and technical meeting committees. My work has led to the following awards: (1) 1994 Optoelectronics Conference Special Award, (2) 1996 IEEE/LEOS Engineering Achievement Award, (3) 1998 Japan Society for Applied Physics C Award, (4) 1998 Rank Award, (5) 2001 Marubun Academic Award, (6) 2002 Takeda Award, (7) 2003 Solid State Devices and Materials Conference Paper Award and (8) 2009 Nistep (National Institute of Science and Technology Policy) Researcher from the Ministry of Education of Japan. My research field is semiconductor physics, particularly the crystal growth and device physics of group III nitride semiconductors.
As a researcher, I have gained a wide range of experience including research leading to new findings, discussions with highly talented researchers worldwide, seeing changes to human life as a result of new devices whose development I have had the opportunity to, and competition with other researchers. I strongly hope that highly motivated students and young faculty members will gain similar valuable experience through new research and projects. It would be my pleasure and honor to help young students and researchers to become eminent researchers and engineers.
【Basic policy of education and research】 Our mission is to sustainably improve the quality of human life by developing sustainable devices (i.e., nvironmentally friendly, long-life devices with high-efficiency energy conversion) using sustainable materials and low-cost device-processing technology. Group III nitride semiconductors are one of the most promising candidates to realize such novel devices. We aim to develop new technologies for growing high-quality and well-controlled nitrides, their heterostructures including nanostructures, digital alloys and also device structures.
Through this process, I will do my utmost to enable students and young researchers to gain the ability for finding what they should do and for acting properly. One of the most important aims of this laboratory is to produce hte next generation of world-leading reserarchers.
【Message for student】 When I was a univeristy student, the semiconductor industry was an exciting and pioneering industry compared with other industries. The situation changed drastically. Today, the Si-based LSI industry is highly competitive with enormous investments and it is difficult to make new discoveries. In contrast, in case of compound semiconductors, particularly group III nitrides, even their material properties are still unknown, although their extremely high and wide potential is beyond doubt. Therefore, we are fortunate because of the many research opportunities avaibale. If you are interested in growing novel crystals and would like to help change the world by developing new functional devices, why don't you visit us for discussion. All enquiries will be greatly welcomed.
【Message for examinee】 A future vision and a purpose in your life are like a GPS and a compass in a ship, which are essential for you to reach your goals. If you are still lacking a dream or a purpose of your life, we will be happy to assist you to find your own dream.
Updated on 2018/11/24
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