Updated on 2023/04/05

写真a

 
LIU Xin
 
Organization
Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics Designated assistant professor
Title
Designated assistant professor

Degree 1

  1. Doctor of Engineering ( 2012.6   Xi'an Jiaotong University ) 

Research Interests 1

  1. Crystal growth Modeling

Research History 1

  1. Kyushu University   Research Institute for Applied Mechanics   Researcher

    2012.10 - 2020.3

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    Country:Japan

 

Papers 27

  1. Analysis of the Effect of Cusp-Shaped Magnetic Fields on Heat, Mass, and Oxygen Transfer Using a Coupled 2D/3D Global Model Invited Reviewed

    Koichi Kakimoto, Xin Liu, Satoshi Nakano

        page: 2100092   2021.9

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  2. Numerical Analysis of Phosphorus Concentration Distribution in a Silicon Crystal during Directional Solidification Process Invited Reviewed

    Satoshi Nakano, Xin Liu, Xue-feng Han, Koichi Kakimoto

    Crystals   Vol. 11 ( 1 ) page: 27 - 36   2020.12

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  3. Numerical analysis of dopant concentration in 200 mm (8 inch) floating zone silicon

    Han Xue-Feng, Liu Xin, Nakano Satoshi, Kakimoto Koichi

    JOURNAL OF CRYSTAL GROWTH   Vol. 545   2020.9

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2020.125752

    Web of Science

  4. 3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth

    Han Xue-Feng, Liu Xin, Nakano Satoshi, Harada Hirofumi, Miyamura Yoshiji, Kakimoto Koichi

    JOURNAL OF CRYSTAL GROWTH   Vol. 532   2020.2

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2019.125403

    Web of Science

  5. Transient global modeling for the pulling process of Czochralski silicon crystal growth. I. Principles, formulation, and implementation of the model

    Liu Xin, Harada Hirofumi, Miyamura Yoshiji, Han Xue-feng, Nakano Satoshi, Nishizawa Shin-ichi, Kakimoto Koichi

    JOURNAL OF CRYSTAL GROWTH   Vol. 532   2020.2

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2019.125405

    Web of Science

  6. Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon

    Liu Xin, Harada Hirofumi, Miyamura Yoshiji, Han Xue-feng, Nakano Satoshi, Nishizawa Shin-ichi, Kakimoto Koichi

    JOURNAL OF CRYSTAL GROWTH   Vol. 532   2020.2

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2019.125404

    Web of Science

  7. 3D Numerical Analysis of the Asymmetric Three-Phase Line of Floating Zone for Silicon Crystal Growth

    Han Xue-Feng, Liu Xin, Nakano Satoshi, Harada Hirofumi, Miyamura Yoshiji, Kakimoto Koichi

    CRYSTALS   Vol. 10 ( 2 )   2020.2

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.3390/cryst10020121

    Web of Science

  8. In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals

    Miyamura Y., Harada H., Liu X., Nakano S., Nishizawa S., Kakimoto K.

    JOURNAL OF CRYSTAL GROWTH   Vol. 507   page: 154 - 156   2019.2

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2018.11.017

    Web of Science

  9. Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth

    Liu Xin, Harada Hirofumi, Miyamura Yoshiji, Han Xue-feng, Nakano Satoshi, Nishizawa Shin-ichi, Kakimoto Koichi

    JOURNAL OF CRYSTAL GROWTH   Vol. 499   page: 8 - 12   2018.10

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2018.07.020

    Web of Science

  10. 3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth

    Han Xue-Feng, Liu Xin, Nakano Satoshi, Harada Hirofumi, Miyamura Yoshiji, Kakimoto Koichi

    CRYSTAL RESEARCH AND TECHNOLOGY   Vol. 53 ( 5 )   2018.5

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/crat.201700246

    Web of Science

  11. 3D numerical simulation of free surface shape during the crystal growth of floating zone (FZ) silicon

    Han Xue-Feng, Liu Xin, Nakano Satoshi, Harada Hirofumi, Miyamura Yoshiji, Kakimoto Koichi

    JOURNAL OF CRYSTAL GROWTH   Vol. 483   page: 269 - 274   2018.2

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2017.12.012

    Web of Science

  12. Effect of controlled crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth

    Liu Xin, Han Xue-Feng, Nakano Satoshi, Kakimoto Koichi

    JOURNAL OF CRYSTAL GROWTH   Vol. 483   page: 241 - 244   2018.2

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2017.12.016

    Web of Science

  13. Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth

    Liu Xin, Gao Bing, Nakano Satoshi, Kakimoto Koichi

    JOURNAL OF CRYSTAL GROWTH   Vol. 474   page: 3 - 7   2017.9

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2016.12.013

    Web of Science

  14. Effect of the packing structure of silicon chunks on the melting process and carbon reduction in Czochralski silicon crystal growth

    Liu Xin, Nakano Satoshi, Kakimoto Koichi

    JOURNAL OF CRYSTAL GROWTH   Vol. 468   page: 595 - 600   2017.6

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2016.09.062

    Web of Science

  15. Development of carbon transport and modeling in Czochralski silicon crystal growth

    Liu Xin, Nakano Satoshi, Kakimoto Koichi

    CRYSTAL RESEARCH AND TECHNOLOGY   Vol. 52 ( 1 )   2017.1

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/crat.201600221

    Web of Science

  16. Growth of semiconductor silicon crystals

    Kakimoto Koichi, Gao Bing, Liu Xin, Nakano Satoshi

    PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS   Vol. 62 ( 2 ) page: 273 - 285   2016.6

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.pcrysgrow.2016.04.014

    Web of Science

  17. Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth

    Liu Xin, Gao Bing, Nakano Satoshi, Kakimoto Koichi

    CRYSTAL RESEARCH AND TECHNOLOGY   Vol. 50 ( 6 ) page: 458 - 463   2015.6

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/crat.201500014

    Web of Science

  18. Numerical investigation of carbon contamination during the melting process of Czochralski silicon crystal growth

    Liu Xin, Gao Bing, Kakimoto Koichi

    JOURNAL OF CRYSTAL GROWTH   Vol. 417   page: 58 - 64   2015.5

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2014.07.040

    Web of Science

  19. Heat transfer in an industrial directional solidification furnace with multi-heaters for silicon ingots

    Li Zaoyang, Liu Lijun, Liu Xin, Zhang Yunfeng, Xiong Jingfeng

    JOURNAL OF CRYSTAL GROWTH   Vol. 385   page: 9 - 15   2014.1

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2013.01.053

    Web of Science

  20. Effects of argon flow on melt convection and interface shape in a directional solidification process for an industrial-size solar silicon ingot

    Li Zaoyang, Liu Lijun, Liu Xin, Zhang Yunfeng, Xiong Jingfeng

    JOURNAL OF CRYSTAL GROWTH   Vol. 360   page: 87 - 91   2012.12

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2011.11.053

    Web of Science

  21. Effects of static magnetic fields on thermal fluctuations in the melt of industrial CZ-Si crystal growth

    Liu Xin, Liu Lijun, Li Zaoyang, Wang Yuan

    JOURNAL OF CRYSTAL GROWTH   Vol. 360   page: 38 - 42   2012.12

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2011.11.080

    Web of Science

  22. Effects of cusp-shaped magnetic field on melt convection and oxygen transport in an industrial CZ-Si crystal growth

    Liu Xin, Liu Lijun, Li Zaoyang, Wang Yuan

    JOURNAL OF CRYSTAL GROWTH   Vol. 354 ( 1 ) page: 101 - 108   2012.9

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2012.06.004

    Web of Science

  23. Large-eddy simulation of melt turbulence in a 300-mm Cz-Si crystal growth

    Liu Lijun, Liu Xin, Wang Yuan

    INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER   Vol. 55 ( 1-3 ) page: 53 - 60   2012.1

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.ijheatmasstransfer.2011.08.038

    Web of Science

  24. CONTROL OF OXYGEN TRANSPORT IN THE MELT OF A CZOCHRALSKI-SILICON CRYSTAL GROWTH

    Wang Hao, Liu Lijun, Liu Xin, Li Zaoyang

    JOURNAL OF ENHANCED HEAT TRANSFER   Vol. 19 ( 6 ) page: 505 - 514   2012

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    Web of Science

  25. Effects of Transverse Magnetic Field on Thermal Fluctuations in the Melt of a Cz-Si Crystal Growth

    Liu Xin, Liu Lijun, Wang Yuan

    CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011)   Vol. 34 ( 1 ) page: 1123 - 1128   2011

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/1.3567724

    Web of Science

  26. Modeling of the 3D Unsteady Melt Flow in an Industrial-Scale Cz-Si Crystal Growth Using LES Method

    Liu Xin, Liu Lijun, Wang Yuan, Kakimoto Koichi

    CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010)   Vol. 27 ( 1 ) page: 1035 - 1039   2010

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/1.3360747

    Web of Science

  27. Modeling and simulation of Si crystal growth from melt Reviewed International coauthorship

    Lijun Liu, Hiroaki Miyazawa, Satoshi Nakano, Xin Liu, Zaoyang Li, Koichi Kakimoto

    Phys. Status Solidi C   Vol. 6 ( 3 ) page: 645 - 652   2009.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssc.200880705

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