受賞区分：学会誌・学術雑誌による顕彰  受賞国：日本国

記述言語：英語   掲載種別：研究論文（学術雑誌）  

DOI： /10.1063/5.0027789

記述言語：日本語   掲載種別：研究論文（学術雑誌）  

DOI： 10.1063/1.5145017

Web of Science

出版者・発行元：Applied Physics Letters  

The space charge density profile of the nondoped AlGaN-based p-type cladding layer for UV-C laser diodes realized by distributed polarization doping is examined theoretically and experimentally. The analysis of the capacitance-voltage measurement revealed that the average effective acceptor density of 4.2×1017 cm-3 is achieved even without impurity doping, and it is in good agreement with the theoretical prediction from the measured Al composition profile. This result suggests that the cladding layer is ideal for UV-C LDs because it provides sufficient hole injection while potentially avoiding internal losses due to impurity doping.

DOI： 10.1063/5.0027789

Scopus

記述言語：日本語   掲載種別：研究論文（学術雑誌）   出版者・発行元：Japanese Journal of Applied Physics  

We present an optical modeling and characterization study of prototype ultraviolet laser diode (LD) structures grown on single-crystal AlN substrates, with focus on the reduction of modal loss caused by optical mode coupling to the absorptive layers on the p-side (i.e. p-contact and p-metal layers). The transparent AlN substrates enabled optical pumping for measuring modal loss without requiring functioning LDs. The modal loss measured in this way was in good agreement with electrically evaluated results of processed LDs, and both results were consistent with optical modeling predictions. By using 0.32 μm thick p-side cladding, we were able to suppress the modal loss of the designed LD structure to 8.4 cm-1, where the contribution from the absorptive p-contact layers was less than 3 cm-1.

DOI： 10.35848/1347-4065/abaac6

Scopus

記述言語：日本語   出版者・発行元：公益社団法人 応用物理学会  

DOI： 10.11470/jsapmeeting.2020.2.0_550

CiNii Research