Tohoku University

2006.4 - 2007.3

Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals Reviewed

Ohno Yutaka, Inoue Kaihei, Fujiwara Kozo, Deura Momoko, Kutsukake Kentaro, Yonenaga Ichiro, Shimizu Yasuo, Inoue Koji, Ebisawa Naoki, Nagai Yasuyoshi

APPLIED PHYSICS LETTERS   Vol. 106 ( 25 )   2015.6

Nanoscopic mechanism of Cu precipitation at small-angle tilt boundaries in Si Reviewed

Ohno Yutaka, Inoue Kaihei, Kutsukake Kentaro, Deura Momoko, Ohsawa Takayuki, Yonenaga Ichiro, Yoshida Hideto, Takeda Seiji, Taniguchi Ryo, Otubo Hideki, Nishitani Sigeto R., Ebisawa Naoki, Shimizu Yasuo, Takamizawa Hisashi, Inoue Koji, Nagai Yasuyoshi

PHYSICAL REVIEW B   Vol. 91 ( 23 )   2015.6

Czochralski growth of heavily tin-doped Si crystals Reviewed

Yonenaga I., Taishi T., Inoue K., Gotoh R., Kutsukake K., Tokumoto Y., Ohno Y.

JOURNAL OF CRYSTAL GROWTH   Vol. 395   page： 94-97   2014.6

Slip systems in wurtzite ZnO activated by Vickers indentation on {2(1)over-bar (1)over-bar0} and {10(1)over-bar0} surfaces at elevated temperatures Reviewed

Ohno Y., Koizumi H., Tokumoto Y., Kutsukake K., Taneichi H., Yonenaga I.

JOURNAL OF CRYSTAL GROWTH   Vol. 393   page： 119-122   2014.5

Czochralski growth of heavily indium-doped Si crystals and co-doping effects of group-IV elements Reviewed

Inoue K., Taishi T., Tokumoto Y., Kutsukake K., Ohno Y., Ohsawa T., Gotoh R., Yonenaga I.

JOURNAL OF CRYSTAL GROWTH   Vol. 393   page： 45-48   2014.5

Mono-Like Silicon Growth Using Functional Grain Boundaries to Limit Area of Multicrystalline Grains Reviewed

Kutsukake Kentaro, Usami Noritaka, Ohno Yutaka, Tokumoto Yuki, Yonenaga Ichiro

IEEE JOURNAL OF PHOTOVOLTAICS   Vol. 4 ( 1 ) page： 84-87   2014.1

Three-dimensional evaluation of gettering ability of Sigma 3{111} grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy Reviewed

Ohno Yutaka, Inoue Kaihei, Tokumoto Yuki, Kutsukake Kentaro, Yonenaga Ichiro, Ebisawa Naoki, Takamizawa Hisashi, Shimizu Yasuo, Inoue Koji, Nagai Yasuyoshi, Yoshida Hideto, Takeda Seiji

APPLIED PHYSICS LETTERS   Vol. 103 ( 10 )   2013.9

Growth of Si single bulk crystals with low oxygen concentrations by the noncontact crucible method using silica crucibles without Si3N4 coating Reviewed

Nakajima Kazuo, Murai Ryota, Morishita Kohei, Kutsukake Kentaro

JOURNAL OF CRYSTAL GROWTH   Vol. 372   page： 121-128   2013.6

Interstitial oxygen behavior for thermal double donor formation in germanium: Infrared absorption studies Reviewed

Inoue K., Taishi T., Tokumoto Y., Murao Y., Kutsukake K., Ohno Y., Suezawa M., Yonenaga I.

JOURNAL OF APPLIED PHYSICS   Vol. 113 ( 7 )   2013.2

Control of Grain Boundary Propagation in Mono-Like Si: Utilization of Functional Grain Boundaries Reviewed

Kutsukake Kentaro, Usami Noritaka, Ohno Yutaka, Tokumoto Yuki, Yonenaga Ichiro

APPLIED PHYSICS EXPRESS   Vol. 6 ( 2 )   2013.2

Nanoindentation Hardness and Elastic Modulus of AlGaN Alloys Reviewed

Tokumoto Y., Taneichi H., Ohno Y., Kutsukake K., Miyake H., Hiramatsu K., Yonenaga I.

2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR)     page： .   2013

Growth of Si Single Bulk Crystals Inside Si Melts By the Noncontact Crucible Method Using Silica Crucibles Without Coating Si3N4 Particles Reviewed

Nakajima Kazuo, Murai Ryota, Morishita Kohei, Kutsukake Kentaro

2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)     page： 174-176   2013

Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation (vol 112, 093526, 2012) Reviewed

Tokumoto Yuki, Kutsukake Kentaro, Ohno Yutaka, Yonenaga Ichiro

JOURNAL OF APPLIED PHYSICS   Vol. 112 ( 12 )   2012.12

Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation Reviewed

Tokumoto Yuki, Kutsukake Kentaro, Ohno Yutaka, Yonenaga Ichiro

JOURNAL OF APPLIED PHYSICS   Vol. 112 ( 9 )   2012.11

Growth of high-quality multicrystalline Si ingots using noncontact crucible method Reviewed

Nakajima Kazuo, Morishita Kohei, Murai Ryota, Kutsukake Kentaro

JOURNAL OF CRYSTAL GROWTH   Vol. 355 ( 1 ) page： 38-45   2012.9

Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during one-directional growth Reviewed

Kutsukake Kentaro, Ise Hideaki, Tokumoto Yuki, Ohno Yutaka, Nakajima Kazuo, Yonenaga Ichiro

JOURNAL OF CRYSTAL GROWTH   Vol. 352 ( 1 ) page： 173-176   2012.8

Growth of multicrystalline Si ingots using noncontact crucible method for reduction of stress Reviewed

Nakajima Kazuo, Murai Ryota, Morishita Kohei, Kutsukake Kentaro, Usami Noritaka

JOURNAL OF CRYSTAL GROWTH   Vol. 344 ( 1 ) page： 6-11   2012.4

Growth of Heavily Indium doped Si Crystals by Co-Doping of Neutral Impurity Carbon or Germanium Reviewed

Inoue Kaihei, Tokumoto Yuki, Kutsukake Kentaro, Ohno Yutaka, Yonenaga Ichiro

MATERIALS INTEGRATION   Vol. 508   page： 220-223   2012

Growth of Multicrystalline Si Ingots for Solar Cells Using Noncontact Crucible Method without Touching the Crucible Wall Reviewed

Nakajima Kazuo, Murai Ryota, Morishita Kohei, Kutsukake Kentaro, Usami Noritaka

2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)     page： 1830-1832   2012

Generation mechanism of dislocations and their clusters in multicrystalline silicon during two-dimensional growth Reviewed

Kutsukake Kentaro, Abe Takuro, Usami Noritaka, Fujiwara Kozo, Yonenaga Ichiro, Morishita Kohei, Nakajima Kazuo

JOURNAL OF APPLIED PHYSICS   Vol. 110 ( 8 )   2011.10

Formation mechanism of twin boundaries during crystal growth of silicon Reviewed

Kutsukake Kentaro, Abe Takuro, Usami Noritaka, Fujiwara Kozo, Morishita Kohei, Nakajima Kazuo

SCRIPTA MATERIALIA   Vol. 65 ( 6 ) page： 556-559   2011.9

Implementation of faceted dendrite growth on floating cast method to realize high-quality multicrsytalline Si ingot for solar cells Reviewed

Usami Noritaka, Takahashi Isao, Kutsukake Kentaro, Fujiwara Kozo, Nakajima Kazuo

JOURNAL OF APPLIED PHYSICS   Vol. 109 ( 8 )   2011.4

Arrangement of dendrite crystals grown along the bottom of Si ingots using the dendritic casting method by controlling thermal conductivity under crucibles Reviewed

Nakajima Kazuo, Kutsukake Kentaro, Fujiwara Kozo, Morishita Kohei, Ono Satoshi

JOURNAL OF CRYSTAL GROWTH   Vol. 319 ( 1 ) page： 13-18   2011.3

Pattern formation mechanism of a periodically faceted interface during crystallization of Si Reviewed

Tokairin M., Fujiwara K., Kutsukake K., Kodama H., Usami N., Nakajima K.

JOURNAL OF CRYSTAL GROWTH   Vol. 312 ( 24 ) page： 3670-3674   2010.12

Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed Reviewed

Takahashi Isao, Usami Noritaka, Kutsukake Kentaro, Stokkan Gaute, Morishita Kohei, Nakajima Kazuo

JOURNAL OF CRYSTAL GROWTH   Vol. 312 ( 7 ) page： 897-901   2010.3

Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth Reviewed

Usami Noritaka, Yokoyama Ryusuke, Takahashi Isao, Kutsukake Kentaro, Fujiwara Kozo, Nakajima Kazuo

JOURNAL OF APPLIED PHYSICS   Vol. 107 ( 1 )   2010.1

HIGH EFFICIENCY SOLAR CELLS OBTAINED FROM SMALL SIZE INGOTS WITH 30 CM Phi BY CONTROLLING THE DISTRIBUTION AND ORIENTATION OF DENDRITE CRYSTALS GROWN ALONG THE BOTTOM OF THE INGOTS Reviewed

Nakajima K., Kutsukake K., Fujiwara K., Usami N., Ono S., Yamasaki

35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE     page： 817-819   2010

FORMATION MECHANISM OF TWIN BOUNDARIES IN SILICON MULTICRYSTALS DURING CRYSTAL GROWTH Reviewed

Kutsukake K., Abe T., Usami N., Fujiwara K., Morishita K., Nakajima K.

35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE     page： .   2010

Computational Investigation of Relationship between Shear Stress and Multicrystalline Structure in Silicon Reviewed

Takahashi Isao, Usami Noritaka, Kutsukake Kentaro, Morishita Kohei, Nakajima Kazuo

JAPANESE JOURNAL OF APPLIED PHYSICS   Vol. 49 ( 4 )   2010

Growth behavior of faceted Si crystals at grain boundary formation Reviewed

Fujiwara K., Tsumura S., Tokairin M., Kutsukake K., Usami N., Uda S., Nakajima K.

JOURNAL OF CRYSTAL GROWTH   Vol. 312 ( 1 ) page： 19-23   2009.12

Formation mechanism of a faceted interface: In situ observation of the Si(100) crystal-melt interface during crystal growth Reviewed

Tokairin M., Fujiwara K., Kutsukake K., Usami N., Nakajima K.

PHYSICAL REVIEW B   Vol. 80 ( 17 )   2009.11

Microstructures of Si multicrystals and their impact on minority carrier diffusion length Reviewed

Wang H. Y., Usami N., Fujiwara K., Kutsukake K., Nakajima K.

ACTA MATERIALIA   Vol. 57 ( 11 ) page： 3268-3276   2009.6

Quantitative analysis of subgrain boundaries in Si multicrystals and their impact on electrical properties and solar cell performance Reviewed

Kutsukake Kentaro, Usami Noritaka, Ohtaniuchi Tsuyoshi, Fujiwara Kozo, Nakajima Kazuo

JOURNAL OF APPLIED PHYSICS   Vol. 105 ( 4 )   2009.2

Structural origin of a cluster of bright spots in reverse bias electroluminescence image of solar cells based on Si multicrystals Reviewed

Usami Noritaka, Kutsukake Kentaro, Fujiwara Kozo, Yonenaga Ichiro, Nakajima Kazuo

APPLIED PHYSICS EXPRESS   Vol. 1 ( 7 )   2008.7

Modification of local structures in multicrystals revealed by spatially resolved x-ray rocking curve analysis Reviewed

Usami Noritaka, Kutsukake Kentaro, Fujiwara Kozo, Nakajima Kazuo

JOURNAL OF APPLIED PHYSICS   Vol. 102 ( 10 )   2007.11

Influence of structural imperfection of Sigma 5 grain boundaries in bulk multicrystalline Si on their electrical activities Reviewed

Kutsukake Kentaro, Usami Noritaka, Fujiwara Kozo, Nose Yoshitaro, Nakajima Kazuo

JOURNAL OF APPLIED PHYSICS   Vol. 101 ( 6 )   2007.3

Modification of local structure and its influence on electrical activity of near (310) Sigma 5 grain boundary in bulk silicon Reviewed

Kutsukake Kentaro, Usami Noritaka, Fujiwara Kozo, Nose Yoshitaro, Sugawara Takamasa, Shishido Toetsu, Nakajima Kazuo

MATERIALS TRANSACTIONS   Vol. 48 ( 2 ) page： 143-147   2007.2

Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer Reviewed

Usami Noritaka, Kutsukake Kentaro, Nakajima Kazuo, Amtablian Sevak, Fave Alain, Lemiti Mustapha

APPLIED PHYSICS LETTERS   Vol. 90 ( 3 )   2007.1

Realization of bulk multicrystalline silicon with controlled grain boundaries by utilizing spontaneous modification of grain boundary configuration Reviewed

Usami N, Kutsukake K, Sugawara T, Fujwara K, Pan W, Nose Y, Shishido T, Nakajima K

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   Vol. 45 ( 3A ) page： 1734-1737   2006.3

Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique Reviewed

Kitamura M, Usami N, Sugawara T, Kutsukake K, Fujiwara K, Nose Y, Shishido T, Nakajima K

JOURNAL OF CRYSTAL GROWTH   Vol. 280 ( 3-4 ) page： 419-424   2005.7

Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained-Si layer Reviewed

Usami Noritaka, Kutsukake Kentaro, Pan Wugen, Fujiwara Kozo, Ujihara Toru, Zhang Baoping, Yokoyama Takashi, Nakajima Kazuo

JOURNAL OF CRYSTAL GROWTH   Vol. 275 ( 1-2 ) page： E1203-E1207   2005.2

Floating zone growth of Si bicrystals using seed crystals with artificially designed grain boundary configuration Reviewed

Usami N, Kitamura M, Sugawara T, Kutsukake K, Ohdaira K, Nose Y, Fujiwara K, Shishido T, Nakajima K

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   Vol. 44 ( 24-27 ) page： L778-L780   2005

On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates Reviewed

Kutsukake K, Usami N, Ujihara T, Fujiwara K, Sazaki G, Nakajima K

APPLIED PHYSICS LETTERS   Vol. 85 ( 8 ) page： 1335-1337   2004.8

Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate Reviewed

Kutsukake K, Usami N, Fujiwara K, Ujihara T, Sazaki G, Nakajima K, Zhang BP, Segawa Y

APPLIED SURFACE SCIENCE   Vol. 224 ( 1-4 ) page： 95-98   2004.3

Fabrication of SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate Reviewed

Kutsukake K, Usami N, Fujiwara K, Ujihara T, Sazaki G, Zhang BP, Segawa Y, Nakajima K

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   Vol. 42 ( 3A ) page： L232-L234   2003.3