Papers - DEKI Manato
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Usami Shigeyoshi, Tanaka Atsushi, Fukushima Hayata, Ando Yuto, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.6
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Uemura Keisuke, Deki Manato, Honda Yoshio, Amano Hiroshi, Sato Taketomo
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.6
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Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability
Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 2019.6
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Morphological study of InGaN on GaN substrate by supersaturation (vol 508, pg 58, 2019)
Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Sitar Zlatko, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH Vol. 514 page: 13 - 13 2019.5
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Sato Shin-ichiro, Deki Manato, Nakamura Tohru, Nishimura Tomoaki, Stavrevski Daniel, Greentree Andrew D., Gibson Brant C., Ohshima Takeshi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 58 ( 5 ) 2019.5
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Sandupatla A., Arulkumaran S., Ng G. I., Ranjan K., Deki M., Nitta S., Honda Y., Amano H.
AIP ADVANCES Vol. 9 ( 4 ) 2019.4
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Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy
Liu Zhibin, Nitta Shugo, Usami Shigeyoshi, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH Vol. 509 page: 50 - 53 2019.3
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Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics
Yoshino Michitaka, Ando Yuto, Deki Manato, Toyabe Toru, Kuriyama Kazuo, Honda Yoshio, Nishimura Tomoaki, Amano Hiroshi, Kachi Tetsu, Nakamura Tohru
MATERIALS Vol. 12 ( 5 ) 2019.3
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Morphological study of InGaN on GaN substrate by supersaturation
Liu Zhibin, Nitta Shugo, Robin Yoann, Kushimoto Maki, Deki Manato, Honda Yoshio, Pristovsek Markus, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH Vol. 508 page: 58 - 65 2019.2
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Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown
Fukushima Hayata, Usami Shigeyoshi, Ogura Masaya, Ando Yuto, Tanaka Atsushi, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi
APPLIED PHYSICS EXPRESS Vol. 12 ( 2 ) 2019.2
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Nagamatsu Kentaro, Ando Yuto, Ye Zheng, Barry Ousmane, Tanaka Atsushi, Deki Manato, Nitta Shugo, Honda Yoshio, Pristovsek Markus, Amano Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 10 ) 2018.10
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Ueoka Yoshihiro, Deki Meneto, Honda Yoshio, Amano Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 57 ( 7 ) 2018.7
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Atsushi Tanaka, Yuto Ando, Kentaro Nagamatsu, Manato Deki, Heajeong Cheong, Barry Ousmane, Maki Kushimoto, Shugo Nitta, Yoshio Honda, and Hiroshi Amano
Phys. Status Solidi A Vol. 215 ( 9 ) page: 1700645 2018.5
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Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate
Usami Shigeyoshi, Ando Yuto, Tanaka Atsushi, Nagamatsu Kentaro, Deki Manato, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi, Sugawara Yoshihiro, Yao Yong-Zhao, Ishikawa Yukari
APPLIED PHYSICS LETTERS Vol. 112 ( 18 ) 2018.4
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Femtosecond-Laser-Induced Defects on Silicon Carbide Probed by Electrical Conductivity Reviewed
Takuro Tomita, Manato Deki, Eizo Yanagita, Yota Bando, Yoshiki Naoi, Takahiro Makino and Takeshi Ohshima
Journal of Laser Micro/Nanoengineering Vol. 12 ( 2 ) page: 72 - 75 2017.9
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Effect of dislocations on the growth of p-type GaN and on the characteristics of p-n diodes
Usami Shigeyoshi, Miyagoshi Ryosuke, Tanaka Atsushi, Nagamatsu Kentaro, Kushimoto Maki, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 214 ( 8 ) 2017.8
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Tanaka Atsushi, Barry Ousmane, Nagamatsu Kentaro, Matsushita Junya, Deki Manato, Ando Yuto, Kushimoto Maki, Nitta Shugo, Honda Yoshio, Amano Hiroshi
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Vol. 214 ( 8 ) 2017.8
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Barry Ousmane I., Tanaka Atsushi, Nagamatsu Kentaro, Bae Si-Young, Lekhal Kaddour, Matsushita Junya, Deki Manato, Nitta Shugo, Honda Yoshio, Amano Hiroshi
JOURNAL OF CRYSTAL GROWTH Vol. 468 page: 552 - 556 2017.6
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Development of Sustainable Smart Society based on Transformative Electronics
Ogura M., Ando Y., Usami S., Nagamatsu K., Kushimoto M., Deki M., Tanaka A., Nitta S., Honda Y., Pristovsek M., Kawai H., Yagi S., Amano H.
2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) page: . 2017
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Effect of V/III ratio on the surface morphology and electrical properties of m-plane(10-10) GaN homoepitaxial layers Reviewed
Ousmane I Barry, Atsushi Tanaka, Kentaro Nagamatsu, Si-Young Bae, Kaddour Lekhal, Junya Matsushita, Manato Deki, Shugo Nitta, Yoshio Honda and Hiroshi Amano
Journal of Crystal Growth page: 10.1016 2016.12