研究者詳細 - 大野　雄高

論文 - 大野　雄高

分割表示 339 件中 161 - 180 件目／全件表示 >>

Comparison of electrical characteristics of metamorphic HEMTs with InPHEMTs and PHEMTs

Kawada K, Ohno Y, Kishimoto S, Maezawa K, Mizutani T, Takakusaki M, Nakata H

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 42 巻 ( 4B ) 頁： 2219 - 2222 2003年4月

Characterization of electrical properties of micro-Schottky contacts on epitaxial lateral overgrowth GaN

Kumada K, Murata T, Ohno Y, Kishimoto S, Maezawa K, Mizutani T, Sawaki N

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 42 巻 ( 4B ) 頁： 2250 - 2253 2003年4月

Fluidic assembly of thin GaAs blocks on Si substrates

Soga I, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 42 巻 ( 4B ) 頁： 2226 - 2229 2003年4月

Electronic properties of Gd@C-82 metallofullerene peapods: (Gd @ C-82)(n)@SWNTs

Okazaki T, Shimada T, Suenaga K, Ohno Y, Mizutani T, Lee J, Kuk Y, Shinohara H

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 76 巻 ( 4 ) 頁： 475 - 478 2003年3月

Measurement of frequency dispersion of AlGaN/GaN high electron mobility transistors

Mizutani T, Makihara H, Akita M, Ohno Y, Kishimoto S, Maezawa K

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 42 巻 ( 2A ) 頁： 424 - 425 2003年2月

23aXF-6 カーボンナノチューブ・ナノピーポットにおける輸送特性の温度依存性

嶋田行志, 大野雄高, 岡崎俊也, 菅井俊樹, 岸本茂, 水谷孝, 篠原久典

日本物理学会講演概要集 58.2.4 巻 ( 0 ) 頁： 760 2003年

Experimental demonstration of a resonant tunneling delta-sigma modulator for high-speed, high-resolution analog-to-digital converter

Yokoyama Y, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

COMPOUND SEMICONDUCTORS 2002 174 巻頁： 243 - 246 2003年

Study on off-state breakdown in AlGaN/GaN HEMTs

Nakao T, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS 0 巻 ( 7 ) 頁： 2335 - 2338 2003年

歴代理事長座談会

大野豊, 片山卓也, 米澤明憲, 武市正人, 阿草清滋

コンピュータソフトウェア 20 巻 ( 6 ) 頁： 537 - 548 2003年

Current collapse in AlGaN/GaN HEMTs investigated by electrical and optical characterizations

Mizutani T, Ohno Y, Akita M, Kishimoto S, Maezawa K

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 194 巻 ( 2 ) 頁： 447 - 451 2002年12月

Ambipolar field-effect transistor behavior of Gd@C-82 metallofullerene peapods

Shimada T, Okazaki T, Taniguchi R, Sugai T, Shinohara H, Suenaga K, Ohno Y, Mizuno S, Kishimoto S, Mizutani T

APPLIED PHYSICS LETTERS 81 巻 ( 21 ) 頁： 4067 - 4069 2002年11月

Effects of the HEMT parameters on the operation frequency of resonant tunneling logic gate MOBILE

Aoyama T, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS 85 巻 ( 10 ) 頁： 1 - 6 2002年10月

Large gate leakage current in AlGaN/GaN high electron mobility transistors

Mizuno S, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41 巻 ( 8 ) 頁： 5125 - 5126 2002年8月

Temperature distribution measurement in AlGaN/GaN high-electron-mobility transistors by micro-Raman scattering spectroscopy

Ohno Y, Akita M, Kishimoto S, Maezawa K, Mizutani T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 41 巻 ( 4B ) 頁： L452 - L454 2002年4月

Electroluminescence in AlGaN/GaN high electron mobility transistors under high bias voltage

Nakao T, Ohno Y, Akita M, Kishimoto S, Maezawa K, Mizutani T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 41 巻 ( 4A ) 頁： 1990 - 1991 2002年4月

50 GHz frequency divider using resonant tunnelling chaos circuit

Kawano Y, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

ELECTRONICS LETTERS 38 巻 ( 7 ) 頁： 305 - 306 2002年3月

High-speed operation of a novel frequency divider using resonant tunneling chaos circuit

Kawano Y, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41 巻 ( 2B ) 頁： 1150 - 1153 2002年2月

Electroluminescence in AlGaN/GaN HEMTS

Ohno Y, Nakao T, Akita M, Kishimoto S, Maezawa K, Mizutani T

COMPOUND SEMICONDUCTORS 2001 ( 170 ) 頁： 119 - 124 2002年

Low-frequency noise characteristics of AlGaN/GaN HEMT

Makihara H, Akita M, Ohno Y, Kishimoto S, Maezawa K, Mizutani T

COMPOUND SEMICONDUCTORS 2001 ( 170 ) 頁： 113 - 117 2002年

Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy.

Ohno Yutaka, Akita Mitsutoshi, Kishimoto Shigeru, Maezawa Koichi, Mizutani Takashi

Japanese Journal of Applied Physics 41 巻 ( 4B ) 頁： L452 - L454 2002年

記述言語：英語出版者・発行元：The Japan Society of Applied Physics

Temperature distributions in AlGaN/GaN high-electron-mobility transistors under bias voltage have been measured by micro-Raman scattering spectroscopy. The temperature was estimated from the Raman shift of E<FONT SIZE="-1"><SUB>2</SUB></FONT> phonons of GaN. The spatial and temperature resolutions are 1 μm and 10 K, respectively. When the power dissipation was 248 mW at a drain voltage of 40 V, the peak temperature of 443 K was observed at the gate edge on the drain side at the center of the channel. This position corresponds to the high-field region at the gate edge.

DOI： 10.1143/jjap.41.l452

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