Papers - YUHARA Junji
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Atomic structures and compositions of binary noble metal adsorbates on the Si(111) surface Induced by Thermal Annealing
J. Yuhara and K. Morita
Proceedings of the Second Japan-Russia Seminar on Semiconductor Surfaces ed. by K. Oura, Osaka, Japan page： 124-129 1996.4
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Angle-resolved photoelectron spectroscopy of Si(111)root3xroot3-(Au,Cu) and related Si(111) surfaces with single noble metal adsorbates
K. Soda, K. Yamasaki, D. Ishikawa, J. Yuhara, K. Morita
UVSOR Activity Report Vol. 23 page： 188-189 1996.4
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The interaction of Ni adsorbate with the Ag/Si(111) surface Reviewed
J. Yuhara, R. Ishigami, D. Ishikawa, K. Morita
Surface Science Vol. 328 page： 269-276 1995.4
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Effects of foreign metals on the thermal stability of noble metal adsorbates at the Si(111) surface Reviewed
J. Yuhara, R. Ishigami, K. Morita
Surface Science Vol. 326 page： 133-140 1995.4
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Photoemission study of Ce/Ni(110) system Reviewed
T. Okane, M. Yamada, S. Suzuki, S. Sato, T. Kinosita, A. Kakizaki, T. Ishii, J. Yuhara, M. Kato, K. Morita
J. Phys. Soc. of Japan Vol. 64 page： 1673-1682 1995.4
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High energy ion scattering analysis of thin metal films on the semiconductor surfaces
J. Yuhara and K. Morita
Ion Scat. Spect. for Appl. on Surf. Sci. ed. by T. Koshikawa, Osaka, Japan page： 110-119 1995.4
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Thermal behavior of Cu films on the Si(111) surface in the monolayer regime Reviewed
R. Ishigami, J. Yuhara, K. Morita
Surface Science Vol. 315 page： 302-308 1994.4
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The change of coverage and structure of the Si(111)root3xroot3-Ag surface by isothermal annealing Reviewed
R. Ishigami, J. Yuhara, K. Morita
Surface Science Vol. 321 page： 100-104 1994.4
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The change of atomic structures and compositional ratios by thermal annealing of 2D Ag-Cu binary adsorbates on the Si(111) surface Reviewed
J. Yuhara, R. Ishigami, K. Morita
Control of Semiconductor Interfaces ed. by I. Ohdomari et al., Elsevier Sci. B.V. page： 399-404 1994.4
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Studies on 2D Au-Cu binary adsorbates on Si(111) surfaces by means of combined LEED/AES/RBS techniques Reviewed
M. Sasaki, J. Yuhara, M. Inoue, K. Morita
Surface Science Vol. 283 page： 327-332 1993.4
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Thermal stability of 2D Atomic structures of Au-Ag adsorbates on Si(111) surfaces Reviewed
J. Yuhara, M. Inoue, K. Morita
Journal of Vacuum Science and Technology Vol. A11 page： 2714-2717 1993.4
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Intermixing depth induced by initial chemical reaction in metal-semiconductor interfaces Reviewed
J. Yuhara, R. Ishigami, K. Morita
Formation of Semiconductor Interfaces, ed. by B. Lengeler et al., World Scientific page： 257-260 1993.4
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Commensurate-incommensurate phase transition between 6×6 and root3×root3+satellite structures of the Au/Si(111) surface Reviewed
J. Yuhara, M. Inoue, K. Morita
Journal of Vacuum Science and Technology Vol. A10 page： 3486-3492 1992.4
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Phase transition of the Si(111)-Au surface from root3×root3 to 5×1 structure studied by means of the low-energy electron diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy techniques Reviewed
J. Yuhara, M. Inoue, K. Morita
Journal of Vacuum Science and Technology Vol. A10 page： 334-338 1992.4
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Ion impact desorption of metal atoms from Si(111)root3×root3-metal surfaces Reviewed
M. Inoue, S. Tanaka, J. Yuhara, K. Morita
Nuclear Instruments and Methods in Physics Research Vol. B58 page： 411-416 1991.4