Presentations -
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Characterization of Ge delta-doped Si(111) with RBS-channeling International conference
J. Yuhara, K. Morita, J. Falta, B. H. Mueller, and M. Horn-von
2nd Japan-Russia Symposium on interactions of fast charged particles with solids
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Thermal reaction processes of ternary metal adsorbates on the Si(111) surface, Second Japan-Russia Seminar on Semiconductor Surfaces International conference
J. Yuhara and K. Morita
Second Japan-Russia Seminar on Semiconductor Surfaces
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Thermal Change of Atomic Structures and Compositions of the (Pb,Sn)/Si(111) surfaces in the Monolayer Regimes International conference
D. Nakamura, J. Yuhara, K. Morita
International Symposium on Atomic Level Characterizations for New Materials and Devices '97
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Thermal reaction processes of ternary metal (Au, Ag, Cu) adsorbates on the Si(111) surface International conference
J. Yuhara, D. Ishikawa, K. Morita
6th Int. Conf. on the Formation of Semiconductor Interfaces
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Co-evaporated noble metal behavior on the Si(111) surface by using RBS,14th Int. Conf. Invited International conference
J. Yuhara, K. Morita
Application of Accelerators in Research & Industry
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Desorption of metal atoms adsorbed at the liquid-solid interface by in-situ RBS measurement International conference
K. Morita, J. Yuhara, R. Ishigami, B. Tsuchiya, K. Soda, K. Saitoh, S. Yamamoto, P. Goppelt-Langer, Y. Aoki, H. Takeshita, and H. Naramoto
14th Int. Conf. Application of Accelerators in Research & Industry
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Influence of Ag adsorbate on the Si(111)root3×root3-(Au,Cu) structure International conference
J. Yuhara, D. Ishikawa, K. Morita
2nd Int. Sym. on Control of Semiconductor Interfaces
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RBS-channeling analysis of Er delta-doped InP(001) crystal International conference
J. Yuhara, H. Takeda, , N. Matsubara, M. Tabuchi, Y. Fujiwara, K. Morita, Y. Takeda
Japan-Russia Symposium on atomic collision in solid
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An In-Situ RBS System for Measuring Nuclides Adsorbed at The Liquid-Solid Interface International conference
K. Morita, J. Yuhara, R. Ishigami, B. Tsuchiya, K. Saitoh, S. Yamamoto, P. Goppelt-Langer, Y. Aoki, H. Takeshita, H. Naramoto
7th Int. Sym. on Advanced Nuclear Energy Research
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Structural Analysis of Erbium d-doped InP by OMVPE with RBS-channeling International conference
J. Yuhara, H. Takeda, , N. Matsubara, Y. Fujiwara, K. Morita, Y. Takeda
7th Int. Sym. on Advanced Nuclear Energy Research
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Atomic Structures and Compositions of Binary Noble Metal Adsorbates on the Si(111) Surface Induced by Thermal Annealing International conference
J. Yuhara and K. Morita
Japan-Russia Seminar on Semiconductor Surfaces
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High Energy Ion Scattering Analysis of Thin Metal Films on the Semiconductor Surfaces International conference
J. Yuhara, K. Morita
Ion Scat. Spect. for Appl. on Surf. Sci.
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Ar+ ion recoil-implantation of Cu and Ag from the Si(111)-quasi-5×5 and Cu/Si(111)-root3×root3-Ag surfaces in the keV regime International conference
D. Ishikawa, J. Yuhara, R. Ishigami, K. Soda, K. Morita
13th Int. Vac. Cong. and 9th Int. Conf. on Solid Surf.
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Dissolution and segregation of monolayer Cu, Ni and Co atoms on the Si(111)-root3×root3-Ag surface induced by thermal annealing International conference
J. Yuhara, R.Ishigami, K. Morita
5th Int. Conf. on the Formation of Semiconductor Interfaces
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Dissolution and segregation of Cu and Ni by the effect Ag adsorbate at the Si(111) surface International conference
J. Yuhara, R. Ishigami, D. Ishikawa, K. Morita
Excitation at Semiconductor Surfaces (Gordon conference)
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The change of atomic structures and compositional ratios by thermal annealing of 2D Ag-Cu binary adsorbates on the Si(111) surface International conference
J. Yuhara, R. Ishigami, K. Morita
1st Int. Sym. on Control of Semiconductor Interfaces
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Intermixing depth induced by initial chemical reaction in metal-semiconductor interfaces International conference
J. Yuhara, R. Ishigami, K. Morita
4th Int. Conf. on the Formation of Semiconductor Interfaces